Methods Of Selective Layer Deposition
    11.
    发明申请
    Methods Of Selective Layer Deposition 有权
    选择层沉积方法

    公开(公告)号:US20150162214A1

    公开(公告)日:2015-06-11

    申请号:US14560525

    申请日:2014-12-04

    IPC分类号: H01L21/3213 H01L21/3205

    摘要: Provided are methods for selective deposition. Certain methods describe providing a first substrate surface; providing a second substrate surface; depositing a first layer of film over the first and second substrate surfaces, wherein the deposition has an incubation delay over the second substrate surface such that the first layer of film over the first substrate surface is thicker than the first layer of film deposited over the second substrate surface; and etching the first layer of film over the first and second substrate surfaces, wherein the first layer of film over the second substrate surface is at least substantially removed, but the first layer of film over the first substrate is only partially removed.

    摘要翻译: 提供了选择性沉积的方法。 某些方法描述了提供第一衬底表面; 提供第二衬底表面; 在所述第一和第二衬底表面上沉积第一层膜,其中所述沉积在所述第二衬底表面上具有孵育延迟,使得所述第一衬底表面上的所述第一层膜比沉积在所述第二衬底表面上的所述第一层膜厚 基材表面; 并且在所述第一和第二衬底表面上蚀刻所述第一层膜,其中所述第二衬底表面上的所述第一层膜至少被基本上去除,但所述第一衬底上的所述第一层膜仅被部分地去除。

    In-situ light detection methods and apparatus for ultraviolet semiconductor substrate processing

    公开(公告)号:US11215934B2

    公开(公告)日:2022-01-04

    申请号:US16934597

    申请日:2020-07-21

    IPC分类号: G03F7/00 H01L21/67 G03F7/20

    摘要: Methods and apparatus for detecting ultraviolet light are provided herein. For example, an ultraviolet (UV) process chamber includes a vacuum window or a transparent showerhead; a UV light source disposed above one of the vacuum window or the transparent showerhead and configured to generate and transmit UV light into a process volume of the UV process chamber; and a first UV sensor configured to measure at least one of emissivity from the UV light source or irradiance of the UV light transmitted into the process volume and to transmit a signal corresponding to a measured at least one of emissivity from the UV light source or irradiance of the UV light to a controller coupled to the UV process chamber during operation.

    LID STACK FOR HIGH FREQUENCY PROCESSING

    公开(公告)号:US20210317578A1

    公开(公告)日:2021-10-14

    申请号:US16844089

    申请日:2020-04-09

    摘要: Exemplary semiconductor processing chambers may include a substrate support positioned within a processing region of the semiconductor processing chamber. The chamber may include a lid plate. The chamber may include a gasbox positioned between the lid plate and the substrate support. The gasbox may be characterized by a first surface and a second surface opposite the first surface. The gasbox may define a central aperture. The gasbox may define an annular channel in the first surface of the gasbox extending about the central aperture through the gasbox. The gasbox may include an annular cover extending across the annular channel defined in the first surface of the gasbox. The chamber may include a blocker plate positioned between the gasbox and the substrate support. The chamber may include a ferrite block positioned between the lid plate and the blocker plate.

    Cooled gas feed block with baffle and nozzle for HDP-CVD

    公开(公告)号:US10662529B2

    公开(公告)日:2020-05-26

    申请号:US15141443

    申请日:2016-04-28

    摘要: Techniques are disclosed for methods and apparatuses for reducing particle contamination formation in a high temperature processing chamber with a cooled gas feed block. The cooled gas feed has a body. The body has a main center portion having a top surface and a bottom surface. The body also has a flange extending outward from the bottom surface of the main center portion. A gas channel is disposed through the body. The gas channel has an inlet formed in the top surface of the main center portion and an outlet formed in the bottom surface of the main center portion. The body also has a center coolant channel. The center coolant channel has a first portion having an inlet formed in the top surface of the main center portion, and a second portion coupled to the first portion, the second portion having an outlet formed a sidewall of the flange.

    Arcing detection apparatus for plasma processing

    公开(公告)号:US10580626B2

    公开(公告)日:2020-03-03

    申请号:US15348579

    申请日:2016-11-10

    摘要: Embodiments described herein generally relate to a plasma processing chamber and a detection apparatus for arcing events. In one embodiment, an arcing detection apparatus is disclosed herein. The arcing detection apparatus comprises a probe, a detection circuit, and a data log system. The probe positioned partially exposed to an interior volume of a plasma processing chamber. The detection circuit is configured to receive an analog signal from the probe and output an output signal scaling events present in the analog signal. The data log system is communicatively coupled to receive the output signal from the detection circuit. The data log system is configured to track arcing events occurring in the interior volume.

    Advanced coating method and materials to prevent HDP-CVD chamber arcing

    公开(公告)号:US10208380B2

    公开(公告)日:2019-02-19

    申请号:US15334431

    申请日:2016-10-26

    摘要: Embodiments described herein relate to apparatus and coating methods to reduce chamber arcing, for example, in HDP-CVD, PECVD, PE-ALD and Etch chambers. The apparatus include a ring shaped gas distributor used for in-situ deposition of coating materials, and a process chamber including the same. The ring shaped gas distributor includes a ring shaped body having at least one gas entrance port disposed on a first side thereof and a plurality of gas distribution ports disposed on a first surface of the ring shaped body. The plurality of gas distribution ports are arranged in a plurality of evenly distributed rows. The plurality of gas distribution ports in a first row of the plurality of evenly distributed rows is adapted to direct gas at an exit angle different from an exit angle of the plurality of gas distribution ports in a second row of the plurality of evenly distributed rows.

    Methods of forming solar cells and solar cell modules
    20.
    发明授权
    Methods of forming solar cells and solar cell modules 有权
    形成太阳能电池和太阳能电池组件的方法

    公开(公告)号:US09040409B2

    公开(公告)日:2015-05-26

    申请号:US14213316

    申请日:2014-03-14

    IPC分类号: H01L21/44 H01L31/0224

    摘要: Embodiments of the present invention are directed to processes for making solar cells by simultaneously co-firing metal layers disposed both on a first and a second surface of a bifacial solar cell substrate. Embodiments of the invention may also provide a method forming a solar cell structure that utilize a reduced amount of a silver paste on a front surface of the solar cell substrate and a patterned aluminum metallization paste on a rear surface of the solar cell substrate to form a rear surface contact structure. Embodiments can be used to form passivated emitter and rear cells (PERC), passivated emitter rear locally diffused solar cells (PERL), passivated emitter, rear totally-diffused (PERT), “iPERC,” Crystalline Reduced-cost Aluminum Fire-Through (CRAFT), pCRAFT, nCRAFT or other high efficiency cell concepts.

    摘要翻译: 本发明的实施例涉及通过同时共烧双极太阳能电池基板的第一和第二表面上的金属层来制造太阳能电池的方法。 本发明的实施例还可以提供一种形成太阳能电池结构的方法,该太阳能电池结构在太阳能电池基板的前表面上使用少量的银膏,并且​​在太阳能电池基板的背面上形成图案化的铝金属化浆料,以形成 后表面接触结构。 实施例可用于形成钝化发射器和后电池(PERC),钝化发射器后部局部扩散太阳能电池(PERL),钝化发射极,后部全扩散(PERT),“iPERC”,结晶降低成本的铝穿透 CRAFT),pCRAFT,nCRAFT或其他高效率单元概念。