公开(公告)号：US20180314207A1

公开(公告)日：2018-11-01

申请号：US15744756

申请日：2017-07-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xin Gu ,  Xue Dong ,  Feng Guan ,  Jifeng Tan ,  Meili Wang ,  Wei Wang

IPC: G03H1/22 ,  G02B27/22

CPC classification number: G02B27/22 ,  G03H1/22

Abstract: A holographic display apparatus and a display method thereof are disclosed. The holographic display apparatus includes: a backlight source configured to supply a coherent reference light; an optical switch configured to modulate light wave amplitude information of the coherent reference light; and a phase control plate configured to modulate light wave phase information of the coherent reference light, wherein the phase control plate and the optical switch are arranged on a light exit side of the backlight source.

公开(公告)号：US20180239061A1

公开(公告)日：2018-08-23

申请号：US15961100

申请日：2018-04-24

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Dongfang Wang ,  Meili Wang ,  Li Zhang

IPC: G02B1/113 ,  G02B1/12 ,  G02F1/1335 ,  H01L51/52 ,  H01L31/054

CPC classification number: G02B1/113 ,  G02B1/118 ,  G02B1/12 ,  G02F1/133502 ,  G02F1/133526 ,  G02F2201/38 ,  H01L31/0543 ,  H01L51/5275 ,  H01L51/5281 ,  Y02E10/52

Abstract: The present application discloses a method of fabricating an anti-reflective film, comprising forming a zinc oxynitride layer on a substrate; annealing the zinc oxynitride layer; and etching the surface of the zinc oxynitride layer with an etching solution to form a micro lenses layer comprising a plurality of micro lenses on surface.

公开(公告)号：US09991398B2

公开(公告)日：2018-06-05

申请号：US15107094

申请日：2015-09-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD

Inventor： Dini Xie ,  Meili Wang ,  Xianbin Xu ,  Liangchen Yan ,  Xiaojin Zhang

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L29/24 ,  H01L21/473 ,  H01L21/02

CPC classification number: H01L29/78696 ,  H01L21/02565 ,  H01L21/02631 ,  H01L21/473 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/7869

Abstract: The present disclosure provides a thin film transistor array substrate and a fabrication method thereof, and a display device. The thin film transistor array substrate includes an active layer. The active layer is formed using a zinc target under an environment of oxygen and nitrogen in a sputtering chamber. A source/drain buffer layer is formed on the active layer using the zinc target by a sputtering process in the sputtering chamber under an environment containing one of oxygen and nitrogen.

公开(公告)号：US09659975B2

公开(公告)日：2017-05-23

申请号：US14436576

申请日：2014-09-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Meili Wang ,  Fengjuan Liu ,  Chunsheng Jiang

IPC: H01L21/44 ,  H01L27/12 ,  G02F1/1343

CPC classification number: H01L27/1244 ,  G02F1/13439 ,  G02F2001/134372 ,  H01L27/1259

Abstract: Fabrication methods of a transparent conductive electrode (301) and an array substrate are provided. The fabrication method of the transparent conductive electrode (301) comprises: forming a sacrificial layer pattern (201) on a substrate (10) having a first region (A1) and a second region (A2) adjacent to each other, wherein the sacrificial layer pattern (201) is located in the second region (A2), and has an upper sharp corner profile formed on a side adjacent to the first region (A1); forming a transparent conductive thin-film (30) in the first region (A1) and the second region (A2) of the substrate (10) with the sacrificial layer pattern (201) formed thereon, wherein a thickness ratio of the transparent conductive thin-film (30) to the sacrificial layer pattern (201) is less than or equal to 1:1.5, and the transparent conductive thin-film (30) is disconnected at the upper sharp corner profile of the sacrificial layer pattern (201), such that at least a part of a side surface of the sacrificial layer pattern (201) facing the first region (A1) is exposed; and removing the sacrificial layer pattern (201) so as to reserve the transparent conductive thin-film (30) in the first region as the transparent conductive electrode (301).

公开(公告)号：US12278243B2

公开(公告)日：2025-04-15

申请号：US17529969

申请日：2021-11-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Chenyang Zhang ,  Fuqiang Li ,  Xue Dong ,  Meili Wang ,  Xuan Liang ,  Fei Wang ,  Mingxing Wang ,  Zhanfeng Cao ,  Yanling Han ,  Xinxin Zhao

IPC: H01L27/12 ,  H01L25/075 ,  H01L33/62

Abstract: A semiconductor apparatus and a method for manufacturing the semiconductor apparatus are provided. The semiconductor apparatus includes: a base substrate; a plurality of chips arranged on the base substrate each including a chip main body and a plurality of terminals arranged thereon; a plurality of fixed connection portions arranged on the base substrate, and adjacent to the plurality of chips; a terminal expansion layer arranged on the base substrate; and a plurality of expansion wires in the terminal expansion layer and configured to electrically connect the chips, wherein an expansion wire configured to electrically connect two chips includes at least a first wire segment and a second wire segment, and the first wire segment is configured to electrically connect a terminal of a chip and a fixed connection portion adjacent to the chip, and the second wire segment is configured to connect two fixed connection portions between the two chips.

公开(公告)号：US20240339444A1

公开(公告)日：2024-10-10

申请号：US18749794

申请日：2024-06-21

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xuan Liang ,  Meili Wang ,  Fei Wang ,  Xue Dong ,  Qi Qi

IPC: H01L25/16 ,  H01L23/00

CPC classification number: H01L25/167 ,  H01L24/45 ,  H01L24/48 ,  H01L24/85 ,  H01L24/05 ,  H01L24/06 ,  H01L24/46 ,  H01L2224/04042 ,  H01L2224/05573 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/0568 ,  H01L2224/0603 ,  H01L2224/08145 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45139 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48106 ,  H01L2224/48141 ,  H01L2224/48992 ,  H01L2224/85007 ,  H01L2924/0132 ,  H01L2924/12041

Abstract: A light-emitting substrate is provided, including first and second substrates opposite to each other, and a bonding wire structure including a bonding wire. The first substrate includes: a first base substrate and a first conductive pad. The second substrate includes a second base substrate and a second conductive pad. The first conductive pad is on a surface of the first substrate away from the second substrate, the second conductive pad is on a surface of the second substrate away from the first substrate. The bonding wire is soldered to the first conductive pad at a first solder joint and to the second conductive pad at a second solder joint. The bonding wire includes, at each of the first solder joint and the second solder joint, a portion having an angle with a plane where the first base substrate is located and/or having a curved arc.

公开(公告)号：US11579345B2

公开(公告)日：2023-02-14

申请号：US16618638

申请日：2017-12-15

Applicant: BOE Technology Group Co., Ltd.

Inventor： Ming Zhu ,  Xue Dong ,  Meili Wang ,  Fei Wang ,  Wei Wang

IPC: G02B5/20 ,  H01L31/0232 ,  G02F1/21 ,  G02F1/35 ,  G02F2/00

Abstract: The present disclosure relates to a reflective device and a display apparatus. In one embodiment, a reflective device includes: a resonant cavity configured to reflect a light of a first wavelength range; and a light conversion structure disposed within the resonant cavity and configured to convert an incident light of a second wavelength range into the light of the first wavelength range.

公开(公告)号：US11430913B2

公开(公告)日：2022-08-30

申请号：US16063336

申请日：2017-12-07

Applicant: BOE TECHNOLOGY GROUP CO., LTD. ,  BEIJING BOE DISPLAY TECHNOLOGY CO., LTD.

Inventor： Huijuan Wang ,  Meili Wang ,  Zhenhua Lv ,  Fei Wang ,  Zezhou Yang

IPC: H01L33/06 ,  H01L25/075 ,  H01L25/16 ,  H01L33/32 ,  H01L33/50 ,  H01L33/58 ,  G02F1/1335 ,  G02F1/13357 ,  G09G3/34

Abstract: The present disclosure relates to the field of LED display technologies, and provides an LED chip, an LED light emitting substrate, a display device and a control method thereof. Specifically, the LED chip comprises: an N-type semiconductor layer, a P-type semiconductor layer, as well as a quantum well layer between the N-type semiconductor layer and the P-type semiconductor layer. The quantum well layer is made of indium gallium nitride, wherein indium atoms have a molar ratio of greater than or equal to 0.3 in the indium gallium nitride.

公开(公告)号：US10965086B2

公开(公告)日：2021-03-30

申请号：US16630270

申请日：2019-02-22

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Ming Zhu ,  Xue Dong ,  Xiaochuan Chen ,  Shiyu Zhang ,  Meili Wang ,  Xuan Liang ,  Yingtao Wang

IPC: H01S3/08 ,  G02F1/1335 ,  G02F1/1343 ,  G02F1/155 ,  G02F1/157

Abstract: Embodiments of the present disclosure provide an optical resonant cavity and a display panel. The optical resonant cavity includes a light conversion layer, the optical resonant cavity is configured to emit light with a specific wavelength range, and the light conversion layer is arranged at at least one wave node of a center wavelength of the light with the specific wavelength range in the optical resonant cavity.

公开(公告)号：US20200183063A1

公开(公告)日：2020-06-11

申请号：US16618638

申请日：2017-12-15

Applicant: BOE Technology Group Co., Ltd.

Inventor： Ming Zhu ,  Xue Dong ,  Meili Wang ,  Fei Wang ,  Wei Wang

IPC: G02B5/20

Abstract: The present disclosure relates to a reflective device and a display apparatus. In one embodiment, a reflective device includes: a resonant cavity configured to reflect a light of a first wavelength range; and a light conversion structure disposed within the resonant cavity and configured to convert an incident light of a second wavelength range into the light of the first wavelength range.