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    BIOSENSOR AND METHOD OF DRIVING THE SAME
    11.
    发明申请
    BIOSENSOR AND METHOD OF DRIVING THE SAME 失效
    生物传感器及其驱动方法

    公开(公告)号：US20110068015A1

    公开(公告)日：2011-03-24

    申请号：US12703939

    申请日：2010-02-11

    申请人： Chan Woo Park ,  Chang Geun Ahn ,  Chil Seong Ah ,  Tae Youb Kim ,  An Soon Kim ,  Jong Heon Yang ,  Gun Yong Sung

    发明人： Chan Woo Park ,  Chang Geun Ahn ,  Chil Seong Ah ,  Tae Youb Kim ,  An Soon Kim ,  Jong Heon Yang ,  Gun Yong Sung

    IPC分类号： G01N27/26 ,  G01F1/64

    CPC分类号： G01N27/4145

    摘要： Provided are a biosensor and a method of driving the same. The biosensor includes a transistor including a substrate including a source, a drain, and a channel formed between the source and the drain, a gate insulating layer formed on the channel, and a source electrode and a drain electrode respectively connected with the source and the drain, a fluid line for covering the transistor to have an inner space together with the transistor and in which a sample solution including target molecules flows, a reference electrode formed on an inner wall of the fluid line, and a probe molecule layer attached on the reference electrode and reacting with the target molecules. Accordingly, the reference electrode is formed on the inner wall of the fluid line, enabling miniaturization of the bio device. Also, the probe molecules are formed on the reference electrode to measure a change in threshold voltage according to a change in electric potential between the reference electrode and the gate insulating layer, such that the sensitivity and reaction rate can be remarkably improved.

    摘要翻译： 提供了一种生物传感器及其驱动方法。 生物传感器包括晶体管，其包括基板，该基板包括源极，漏极和形成在源极和漏极之间的沟道，形成在沟道上的栅极绝缘层以及分别与源极和漏极连接的源极和漏极 漏极，用于覆盖晶体管的流体线，其与晶体管一起具有内部空间，并且其中包含目标分子的样品溶液流动，形成在流体管线的内壁上的参考电极和附着在该流体管线上的探针分子层 参考电极并与靶分子反应。 因此，参考电极形成在流体管线的内壁上，使生物装置能够小型化。 此外，探针分子形成在参考电极上，以根据参考电极和栅极绝缘层之间的电位的变化来测量阈值电压的变化，从而可以显着提高灵敏度和反应速率。

    Three-dimensional nanodevices including nanostructures
    13.
    发明授权
    Three-dimensional nanodevices including nanostructures 有权
    包括纳米结构在内的三维纳米器件

    公开(公告)号：US08263964B2

    公开(公告)日：2012-09-11

    申请号：US12672995

    申请日：2008-05-19

    申请人： Han Young Yu ,  Byung Hoon Kim ,  An Soon Kim ,  In Bok Baek ,  Chil Seong Ah ,  Jong Heon Yang ,  Chan Woo Park ,  Chang Geun Ahn

    发明人： Han Young Yu ,  Byung Hoon Kim ,  An Soon Kim ,  In Bok Baek ,  Chil Seong Ah ,  Jong Heon Yang ,  Chan Woo Park ,  Chang Geun Ahn

    IPC分类号： H01L29/06

    CPC分类号： H01J49/4205 ,  B81B7/0025 ,  B81B2201/0214 ,  B81B2201/0271 ,  B82Y10/00 ,  B82Y40/00 ,  G01N2291/0257 ,  H01J49/0018 ,  H01L29/0673 ,  H01L29/7613 ,  H01L29/775 ,  H03H2009/02314

    摘要： Provided are three-dimensional (3D) nanodevices including 3D nanostructures. The 3D nanodevice includes at least one nanostructure, each nanostructure including an oscillation portion floating over a substrate and support portions for supporting both lengthwise end portions of the oscillation portion, supports disposed on the substrate to support the support portions of each of the nanostructures, at least one controller disposed at an upper portion of the substrate, a lower portion of the substrate, or both the upper and lower portions of the substrate to control each of the nanostructures, and a sensing unit disposed on each of the oscillation portions to sense an externally supplied adsorption material. Thus, unlike in a typical planar device, generation of impurities between a nanodevice and a substrate can be reduced, and mechanical vibration can be caused. In particular, since 3D nanostructures have mechanical and electrical characteristics, 3D nanodevices including new 3D nanostructures can be provided using nano-electro-mechanical systems (NEMS). Also, a single electron device, a spin device, or a single electron transistor (SET)-field effect transistor (FET) hybrid device can be formed using a simple process unlike in planar devices.

    摘要翻译： 提供了三维（3D）纳米器件，包括3D纳米结构。 3D纳米装置包括至少一个纳米结构，每个纳米结构包括漂浮在基板上的振荡部分和支撑部分，用于支撑振荡部分的两个纵向端部，支撑件设置在基板上以支撑每个纳米结构的支撑部分， 设置在基板的上部，基板的下部或基板的上部和下部的至少一个控制器，以控制每个纳米结构;以及感测单元，设置在每个振荡部分上以感测 外部供应的吸附材料。 因此，与典型的平面器件不同，可以减少纳米器件与衬底之间的杂质的产生，并且可能引起机械振动。 特别地，由于3D纳米结构具有机械和电学特性，可以使用纳米机电系统（NEMS）提供包括新的3D纳米结构的3D纳米器件。 此外，可以使用与平面器件不同的简单工艺来形成单电子器件，自旋器件或单电子晶体管（SET）场效应晶体管（FET）混合器件。

    THREE-DIMENSIONAL NANODEVICES INCLUDING NANOSTRUCTURES
    14.
    发明申请
    THREE-DIMENSIONAL NANODEVICES INCLUDING NANOSTRUCTURES 有权
    包括纳米结构的三维纳米器件

    公开(公告)号：US20110193052A1

    公开(公告)日：2011-08-11

    申请号：US12672995

    申请日：2008-05-19

    申请人： Han Young Yu ,  Byung Hoon Kim ,  An Soon Kim ,  In Bok Baek ,  Chil Seong Ah ,  Jong Heon Yang ,  Chan Woo Park ,  Chang Geun Ahn

    发明人： Han Young Yu ,  Byung Hoon Kim ,  An Soon Kim ,  In Bok Baek ,  Chil Seong Ah ,  Jong Heon Yang ,  Chan Woo Park ,  Chang Geun Ahn

    IPC分类号： H01L29/06 ,  B82Y99/00

    CPC分类号： H01J49/4205 ,  B81B7/0025 ,  B81B2201/0214 ,  B81B2201/0271 ,  B82Y10/00 ,  B82Y40/00 ,  G01N2291/0257 ,  H01J49/0018 ,  H01L29/0673 ,  H01L29/7613 ,  H01L29/775 ,  H03H2009/02314

    摘要： Provided are three-dimensional (3D) nanodevices including 3D nanostructures. The 3D nanodevice includes at least one nanostructure, each nanostructure including an oscillation portion floating over a substrate and support portions for supporting both lengthwise end portions of the oscillation portion, supports disposed on the substrate to support the support portions of each of the nanostructures, at least one controller disposed at an upper portion of the substrate, a lower portion of the substrate, or both the upper and lower portions of the substrate to control each of the nanostructures, and a sensing unit disposed on each of the oscillation portions to sense an externally supplied adsorption material. Thus, unlike in a typical planar device, generation of impurities between a nanodevice and a substrate can be reduced, and mechanical vibration can be caused. In particular, since 3D nanostructures have mechanical and electrical characteristics, 3D nanodevices including new 3D nanostructures can be provided using nano-electro-mechanical systems (NEMS). Also, a single electron device, a spin device, or a single electron transistor (SET)-field effect transistor (FET) hybrid device can be formed using a simple process unlike in planar devices.

    摘要翻译： 提供了三维（3D）纳米器件，包括3D纳米结构。 3D纳米装置包括至少一个纳米结构，每个纳米结构包括漂浮在基板上的振荡部分和支撑部分，用于支撑振荡部分的两个纵向端部，支撑件设置在基板上以支撑每个纳米结构的支撑部分， 设置在基板的上部，基板的下部或基板的上部和下部的至少一个控制器，以控制每个纳米结构;以及感测单元，设置在每个振荡部分上以感测 外部供应的吸附材料。 因此，与典型的平面器件不同，可以减少纳米器件与衬底之间的杂质的产生，并且可能引起机械振动。 特别地，由于3D纳米结构具有机械和电学特性，可以使用纳米机电系统（NEMS）提供包括新的3D纳米结构的3D纳米器件。 此外，可以使用与平面器件不同的简单工艺来形成单电子器件，自旋器件或单电子晶体管（SET）场效应晶体管（FET）混合器件。

    SEMICONDUCTOR NANOWIRE SENSOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
    15.
    发明申请
    SEMICONDUCTOR NANOWIRE SENSOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体纳米传感器器件及其制造方法

    公开(公告)号：US20100270530A1

    公开(公告)日：2010-10-28

    申请号：US12682571

    申请日：2008-07-24

    申请人： Chan Woo Park ,  Chang Geun Ahn ,  Jong Heon Yang ,  In Book Baek ,  Chil Seong Ah ,  Han Young Yu ,  An Soon Kim ,  Tae Youb Kim ,  Moon Gyu Jang ,  Myung Sim Jun

    发明人： Chan Woo Park ,  Chang Geun Ahn ,  Jong Heon Yang ,  In Book Baek ,  Chil Seong Ah ,  Han Young Yu ,  An Soon Kim ,  Tae Youb Kim ,  Moon Gyu Jang ,  Myung Sim Jun

    IPC分类号： H01L29/775 ,  H01L21/336

    CPC分类号： H01L29/0665 ,  B82Y10/00 ,  B82Y15/00 ,  H01L29/0673 ,  H01L29/78696

    摘要： A method for manufacturing a biosensor device is provided. The method involves forming a silicon nanowire channel with a line width of several nanometers to several tens of nanometers using a typical photolithography process, and using the channel to manufacture a semiconductor nanowire sensor device. The method includes etching a first conductivity-type single crystalline silicon layer which is a top layer of a Silicon-On-Insulator (SOI) substrate to form a first conductivity-type single crystalline silicon line pattern, doping both sidewalls of the first conductivity-type single crystalline silicon line pattern with impurities of a second conductivity-type opposite to the first conductivity-type to form a second conductivity-type channel, forming second conductivity-type pads for forming electrodes at both ends of the first conductivity-type single crystalline silicon line pattern, forming, in an undoped region of the first conductivity-type single crystalline silicon line pattern, a first electrode for applying a reverse-bias voltage to insulate the first conductivity-type single crystalline silicon line pattern and the second conductivity-type channel from each other, and forming second electrodes for applying a bias voltage across the second conductivity-type channel on the second conductivity-type pad.

    摘要翻译： 提供一种制造生物传感器装置的方法。 该方法包括使用典型的光刻工艺形成线宽为几纳米至几十纳米的硅纳米线通道，并使用该通道制造半导体纳米线传感器装置。 该方法包括蚀刻作为绝缘体上硅（SOI）衬底的顶层的第一导电型单晶硅层，以形成第一导电型单晶硅线图案，掺杂第一导电型单晶硅线阵列的两个侧壁， 形成具有与第一导电类型相反的第二导电类型的杂质的单晶硅线图案，以形成第二导电型沟道，形成用于在第一导电型单晶的两端形成电极的第二导电型焊盘 硅线图案，在第一导电型单晶硅线图案的未掺杂区域中形成第一电极，用于施加反向偏置电压以使第一导电型单晶硅线图案和第二导电型 并且形成用于在第二导通型通道上施加偏置电压的第二电极 导电型垫。