公开(公告)号：US20100243608A1

公开(公告)日：2010-09-30

申请号：US12750734

申请日：2010-03-31

Applicant: Chishio Koshimizu

Inventor： Chishio Koshimizu

IPC: B44C1/22 ,  C23C16/513

CPC classification number: H01J37/32541 ,  H01J37/32091 ,  H01J37/32183 ,  H01J37/3255 ,  H01J37/32577

Abstract: There is provided a plasma processing apparatus capable of varying an AC ratio without installing a largely scaled-up movable unit. An etching apparatus 10, which performs a plasma process on a wafer W within a processing chamber, includes a control member which is installed such that at least a part of the control member is in contact with a plasma region within the processing chamber, and an impedance control circuit 210 which is connected with the control member and adjusts a ground capacitance of the plasma region by controlling an electrical connection state between the control member and a ground plane.

Abstract translation: 提供了一种等离子体处理装置，其能够在不安装大型放大的可移动单元的情况下改变AC比。 在处理室内对晶片W进行等离子体处理的蚀刻装置10包括控制部件，该控制部件安装成使得控制部件的至少一部分与处理室内的等离子体区域接触， 阻抗控制电路210，其通过控制控制构件和接地面之间的电连接状态与控制构件连接并调整等离子体区域的接地电容。

公开(公告)号：US20100206482A1

公开(公告)日：2010-08-19

申请号：US12698616

申请日：2010-02-02

Applicant: Tatsuo MATSUDO ,  Chishio Koshimizu ,  Jun Abe

Inventor： Tatsuo MATSUDO ,  Chishio Koshimizu ,  Jun Abe

IPC: C23F1/08 ,  G01J5/08 ,  G01K1/00 ,  C23C16/00

CPC classification number: H01L21/67248 ,  G01J5/0003 ,  G01J5/0007 ,  G01J5/041 ,  G01J5/045 ,  G01J5/048 ,  G01J5/08 ,  G01J5/0803 ,  G01J5/0806 ,  G01J5/0821 ,  G01J5/0846 ,  G01K11/00 ,  H01J2237/2001

Abstract: A plasma processing apparatus includes a temperature measuring unit; airtightly sealed temperature measuring windows provided in a mounting table, for optically communicating to transmit a measurement beam through a top surface and a bottom surface of the mounting table; and one or more connection members for connecting the mounting table and a base plate, which is provided in a space between the mounting table and the base plate. In the plasma processing apparatus, a space above the mounting table is set to be maintained under a vacuum atmosphere, and a space between the mounting table and the base plate is set to be maintained under a normal pressure atmosphere, and each collimator is fixed to the base plate at a position corresponding to each temperature measuring window, thereby measuring a temperature of the substrate via the temperature measuring windows by the temperature measuring unit.

Abstract translation: 一种等离子体处理装置，包括：温度测量单元; 设置在安装台上的气密密封温度测量窗，用于光学连通以将测量光束穿过安装台的顶表面和底表面传播; 以及用于连接安装台和设置在安装台和基板之间的空间中的基板的一个或多个连接构件。 在等离子体处理装置中，将安装台上方的空间设定为保持在真空气氛下，将安装台和基板之间的间隔设定为保持在常压气氛下，将每个准直器固定在 基板在与各温度测量窗对应的位置处，由温度测量单元通过温度测量窗测量基板的温度。

公开(公告)号：US07446881B2

公开(公告)日：2008-11-04

申请号：US11325504

申请日：2006-01-05

Applicant: Tomohiro Suzuki ,  Chishio Koshimizu

Inventor： Tomohiro Suzuki ,  Chishio Koshimizu

IPC: G01B11/02 ,  G01B9/02

CPC classification number: G01B11/0675

Abstract: A measuring apparatus including a light source that emits light with a wavelength that allows the light to be transmitted through and reflected at each measurement target, a splitter that splits the light from the light source into measurement light and reference light, a reference mirror at which the reference light from the splitter is reflected, a mechanism for driving the reference mirror to adjust the optical path length of the reference light reflected from the reference mirror and a mechanism for measuring the interference of the reference light reflected from the reference mirror as the reference light from the splitter is radiated toward the reference mirror and measurement beams reflected from a plurality of measurement targets as the measurement light from the splitter is radiated toward the measurement targets so as to be transmitted through the measurement targets.

Abstract translation: 一种测量装置，包括发射具有允许光在每个测量目标上透射和反射的波长的光的光源，将来自光源的光分解成测量光和参考光的分离器，参考反射镜，其中 来自分离器的参考光被反射，用于驱动参考反射镜以调整从参考反射镜反射的参考光的光路长度的机构和用于测量从参考反射镜反射的参考光的干涉作为参考的机构 来自分离器的光朝向参考反射镜照射，并且作为来自分离器的测量光从多个测量对象反射的测量光束朝向测量对象辐射，以便透射通过测量目标。

公开(公告)号：US07339656B2

公开(公告)日：2008-03-04

申请号：US10831757

申请日：2004-04-26

Applicant: Naoki Matsumoto ,  Yohei Yamazawa ,  Chishio Koshimizu ,  Tatsuo Matsudo ,  Sumie Segawa

Inventor： Naoki Matsumoto ,  Yohei Yamazawa ,  Chishio Koshimizu ,  Tatsuo Matsudo ,  Sumie Segawa

IPC: G01N21/00

CPC classification number: G01N21/68 ,  H01J37/32174 ,  H01J37/32935 ,  H01J37/32972 ,  H01L21/31116

Abstract: An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.

公开(公告)号：US20070193514A1

公开(公告)日：2007-08-23

申请号：US11742643

申请日：2007-05-01

Applicant: Naoki Matsumoto ,  Yohei Yamazawa ,  Chishio Koshimizu ,  Tatsuo Matsudo ,  Sumie Segawa

Inventor： Naoki Matsumoto ,  Yohei Yamazawa ,  Chishio Koshimizu ,  Tatsuo Matsudo ,  Sumie Segawa

IPC: C23C16/00

CPC classification number: G01N21/68 ,  H01J37/32174 ,  H01J37/32935 ,  H01J37/32972 ,  H01L21/31116

Abstract: An apparatus for measuring plasma electron density precisely measures electron density in plasma even under a low electron density condition or high pressure condition. This plasma electron density measuring apparatus includes a vector network analyzer in a measuring unit, which measures a complex reflection coefficient and determines a frequency characteristic of an imaginary part of the coefficient. A resonance frequency at a point where the imaginary part of the complex reflection coefficient is zero-crossed is read and the electron density is calculated based on the resonance frequency by a measurement control unit.

公开(公告)号：US20070084847A1

公开(公告)日：2007-04-19

申请号：US11529390

申请日：2006-09-29

Applicant: Chishio Koshimizu ,  Tomohiro Suzuki

Inventor： Chishio Koshimizu ,  Tomohiro Suzuki

IPC: F27B5/14 ,  F27B5/18

CPC classification number: F27B17/0025 ,  F27B5/04 ,  G01K5/48 ,  G01K11/00 ,  H01L21/67248

Abstract: A stage onto which is electrostatically attracted a substrate to be processed in a substrate processing apparatus, which enables the semiconductor device yield to be improved. A temperature measuring apparatus 200 measures a temperature of the substrate to be processed. A temperature control unit 400 carries out temperature adjustment on the substrate to be processed such as to become equal to a target temperature based on a preset parameter. A temperature control unit 400 controls the temperature of the substrate to be processed by controlling the temperature adjustment by the temperature control unit 400 based on a measured temperature measured by the temperature measuring apparatus 200.

Abstract translation: 在衬底处理装置中静电吸引待处理衬底的阶段，能够提高半导体器件的产量。 温度测量装置200测量待处理的基板的温度。 温度控制单元400基于预设参数，在要处理的基板上进行温度调节，使其等于目标温度。 温度控制单元400基于由温度测量装置200测量的测量温度来控制由温度控制单元400进行的温度调节来控制待处理的基板的温度。

公开(公告)号：US06676804B1

公开(公告)日：2004-01-13

申请号：US09720910

申请日：2001-01-02

Applicant: Chishio Koshimizu ,  Hiroyuki Ishihara ,  Kimihiro Higuchi ,  Koji Maruyama

Inventor： Chishio Koshimizu ,  Hiroyuki Ishihara ,  Kimihiro Higuchi ,  Koji Maruyama

IPC: H05H100

CPC classification number: H01L21/6831 ,  H01J37/32623 ,  H01J37/32642 ,  H01J2237/2001 ,  H01L21/67248 ,  Y10S156/915

Abstract: An electrostatic chuck 108 is provided on a lower electrode 106 provided inside a processing chamber 102 of an etching apparatus 100, and a conductive inner ring body 112a and an insulating outer ring body 112b are encompassing the outer edges of a wafer W mounted on the chuck surface. The temperatures of the wafer W and the inner and outer ring bodies 112a and 112b are detected by first˜third temperature sensors 142, 144 and 146. A controller 140 controls the pressure levels of He supplied to the space between the center of the wafer W and the electrostatic chuck 108 via first gas outlet ducts 114 and to the space between the outer edges of the wafer W and the electrostatic chuck 108 via second gas outlet ducts 116 and the quantity of heat generated by a heater 148 inside the outer ring body 112b based upon the information on the temperatures thus detected so that the temperatures of the wafer W and the inner ring body 112a are set roughly equal to each other.

Abstract translation: 静电吸盘108设置在设置在蚀刻装置100的处理室102内的下电极106上，并且导电内环体112a和绝缘外环体112b包围安装在卡盘上的晶片W的外边缘 表面。 晶片W和内外环体112a和112b的温度由第一至第三温度传感器142,144和146检测。控制器140控制供应给晶片W的中心之间的空间的He的压力水平 以及静电卡盘108经由第一气体出口管道114以及经由第二气体出口管道116和晶片W的外边缘与静电卡盘108之间的空间以及外环体112b内的加热器148产生的热量 基于如此检测的温度的信息，使得晶片W和内环体112a的温度大致相等。

公开(公告)号：US06297064B1

公开(公告)日：2001-10-02

申请号：US09600175

申请日：2000-08-03

Applicant: Chishio Koshimizu

Inventor： Chishio Koshimizu

IPC: H01L2100

CPC classification number: H01J37/32935 ,  G01N21/68 ,  H01J37/32963

Abstract: When plasma-etching a silicon dioxide film with a CF-based gas, the emission intensities (Ia, Ib) of CF-based radicals and carbon monoxide are observed through spectroscopes (61, 62). First, first and second approximate expressions (Fa(x), Fb(x)) which approximate the characteristic curves of the emission intensities (Ia, Ib) within a specified period are obtained, and the ratio of the standard deviations of the emission intensities (Ia, Ib) to the values of the first and second approximate expressions (Fa(x), Fb(x)) is obtained as a correction coefficient &agr;. When the specified period has elapsed, first and second intermediate expressions (Ia/Fa(x), Ib/Fb(b)) are obtained, and a criterion expression ([Ia/Fa(x)]/{&agr;[Ib/Fb(x)−1]+1}, which expresses the ratio of the first intermediate expression to the second intermediate expression and is weight-corrected with the correction coefficient (&agr;), is obtained. The end point of the etching point is determined on the basis of this criterion expression.

Abstract translation: 当用基于CF的气体等离子体蚀刻二氧化硅膜时，通过光谱（61,62）观察CF基自由基和一氧化碳的发射强度（Ia，Ib）。 首先，获得近似特定时间段内的发光强度（Ia，Ib）的特性曲线的第一和第二近似表达式（Fa（x），Fb（x）），并且发射强度的标准偏差 （Ia，Ib）与第一和第二近似表达式（Fa（x），Fb（x））的值被获得作为校正系数α。 当经过规定的时间时，获得第一和第二中间表达式（Ia / Fa（x），Ib / Fb（b）），并且得到标准表达式（[Ia / Fa（x）] / {α[Ib / Fb （x）-1] +1}，其表示第一中间表达式与第二中间表达式的比率并且用校正系数（α）进行加权校正，蚀刻点的终点确定为 这个标准表达的基础。

公开(公告)号：US06000360A

公开(公告)日：1999-12-14

申请号：US887084

申请日：1997-07-02

Applicant: Chishio Koshimizu

Inventor： Chishio Koshimizu

IPC: H01J37/32 ,  C23C16/00

CPC classification number: H01J37/32623 ,  H01J37/3266

Abstract: The plasma processing apparatus according to the present invention comprises a processing chamber in which an object to be processed is processed, a lower electrode provided at a lower portion in the processing chamber, having a mount surface where the object is mounted, and applied with a bias voltage, gas introduce tube for introducing a processing gas into the processing chamber, an upper electrode provided fixedly on a roof portion of the processing chamber and supplied with a high-frequency power, to form plasma from the processing gas in the processing chamber, and a magnetic field formation portion provided fixedly on the roof portion of the processing chamber, for forming a magnetic field in the processing chamber. The the upper electrode and the magnetic field formation portion are arranged such that a force for moving circularly electrons in the plasma is generated in the processing chamber and such that two or more circular flows of electrons which are coaxial with each other and have turning radii different from each other are generated by the force.

Abstract translation: 根据本发明的等离子体处理装置包括：处理室，其中处理被处理物体，设置在处理室的下部的下电极，具有安装物体的安装表面，并且施加有 偏置电压，用于将处理气体引入处理室的气体导入管，固定地设置在处理室的顶部并被供给高频电力的上电极，以从处理室中的处理气体形成等离子体， 以及固定地设置在处理室的顶部的用于在处理室中形成磁场的磁场形成部。 上电极和磁场形成部被布置成使得在处理室中产生用于在等离子体中移动圆形电子的力，并且使得两个或更多个彼此同轴并具有转动半径的电子的圆形流动 彼此产生的力量。

公开(公告)号：US5565114A

公开(公告)日：1996-10-15

申请号：US294396

申请日：1994-08-23

Applicant: Susumu Saito ,  Chishio Koshimizu ,  Kazuo Eguchi

Inventor： Susumu Saito ,  Chishio Koshimizu ,  Kazuo Eguchi

IPC: G01N21/68 ,  H01J37/32 ,  G01N21/00

CPC classification number: H01J37/32935 ,  G01N21/68 ,  H01J37/32963 ,  H01J37/3299

Abstract: This invention provides an end point detection method including the steps of sequentially detecting, when a process using a plasma is performed for an object to be processed, emission spectra in a specific wavelength band of an active species in the plasma by using a photodetector, calculating sum average values of emission intensities of the emission spectra, calculating the ratio or the difference between the sum average values to obtain a calculated value, and determining a point at which the calculated value exceeds a predetermined reference value as an end point of the process.

Abstract translation: 本发明提供了一种终点检测方法，包括以下步骤：当通过使用光电检测器对等离子体中的活性物质的特定波段进行使用等离子体的处理的发射光谱时， 计算发光光谱的发光强度的平均值，计算得到计算值的和平均值之间的比率或差值，以及确定计算值超过预定参考值的点作为处理的终点。