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公开(公告)号：US08603426B1
公开(公告)日：2013-12-10
申请号：US13730432
申请日：2012-12-28
申请人： Klaus Kunze , Wenzhuo Guo , Fabio Zürcher , Mao Takashima , Laila Francisco , Joerg Rockenberger , Brent Ridley
发明人： Klaus Kunze , Wenzhuo Guo , Fabio Zürcher , Mao Takashima , Laila Francisco , Joerg Rockenberger , Brent Ridley
IPC分类号： C01B21/068
摘要： A method of making hydrogenated Group IVA compounds having reduced metal-based impurities, compositions and inks including such Group IVA compounds, and methods for forming a semiconductor thin film. Thin semiconducting films prepared according to the present invention generally exhibit improved conductivity, film morphology and/or carrier mobility relative to an otherwise identical structure made by an identical process, but without the washing step. In addition, the properties of the present thin film are generally more predictable than those of films produced from similarly prepared (cyclo)silanes that have not been washed according to the present invention. The present invention advantageously provides semiconducting thin film structures having qualities suitable for use in electronics applications, such as display devices or RF ID tags, while enabling high-throughput manufacturing processes that form such thin films in seconds or minutes, rather than hours or days as with conventional photolithographic processes.
摘要翻译： 制备具有还原的金属基杂质的氢化IVA族化合物的方法，包括这种IVA族化合物的组合物和油墨以及形成半导体薄膜的方法。 根据本发明制备的薄半导体膜通常相对于通过相同方法制备但不具有洗涤步骤的其它相同结构显示改进的导电性，膜形态和/或载流子迁移率。 此外，本发明的薄膜的性质通常比从根据本发明未被洗涤的类似制备的（环）硅烷生产的薄膜的性能更可预测。 本发明有利地提供了具有适合用于电子应用（例如显示装置或RF ID标签）的质量的半导体薄膜结构，同时实现了在几秒或几分钟而不是几小时或几天内形成这种薄膜的高通量制造工艺， 与传统的光刻工艺。
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12.发明授权Heterocyclic semiconductor precursor compounds, compositions containing the same, and methods of making such compounds and compositions 有权杂环半导体前体化合物，含有它们的组合物，以及制备这些化合物和组合物的方法公开(公告)号：US08211396B1
公开(公告)日：2012-07-03
申请号：US10950373
申请日：2004-09-24
申请人： Wenzhuo Guo , Fabio Zürcher , Joerg Rockenberger , Klaus Kunze , Vladimir K. Dioumaev , Brent Ridley , James Montague Cleeves
发明人： Wenzhuo Guo , Fabio Zürcher , Joerg Rockenberger , Klaus Kunze , Vladimir K. Dioumaev , Brent Ridley , James Montague Cleeves
IPC分类号： C01B33/00
摘要： Heterocyclosilane compounds and methods for making the same. Such compounds (and/or ink compositions containing the same) are useful for printing or spin coating a doped silane film onto a substrate that can easily be converted into a doped amorphous silicon film (that may also be hydrogenated to some extent) or doped polycrystalline semiconductor film suitable for electronic devices. Thus, the present invention advantageously provides commercial qualities and quantities of doped semiconductor films from a “doped liquid silicon” composition.
摘要翻译： 杂环硅烷化合物及其制备方法。 这样的化合物（和/或含有它们的油墨组合物）可用于将掺杂的硅烷膜印刷或旋涂到可以容易地转化成掺杂的非晶硅膜（也可以在一定程度上被氢化）的基底上，或掺杂多晶 半导体薄膜适用于电子设备。 因此，本发明有利地提供了来自“掺杂液体硅”组合物的商业品质和掺杂半导体膜的量。
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13.发明授权Methods of forming a doped semiconductor thin film, doped semiconductor thin film structures, doped silane compositions, and methods of making such compositions 有权形成掺杂半导体薄膜，掺杂半导体薄膜结构，掺杂硅烷组合物的方法和制备这种组合物的方法公开(公告)号：US07981482B1
公开(公告)日：2011-07-19
申请号：US11455976
申请日：2006-06-19
申请人： Fabio Zürcher , Wenzhuo Guo , Joerg Rockenberger , Vladimir K. Dioumaev , Brent Ridley , Klaus Kunze , James Montague Cleeves
发明人： Fabio Zürcher , Wenzhuo Guo , Joerg Rockenberger , Vladimir K. Dioumaev , Brent Ridley , Klaus Kunze , James Montague Cleeves
IPC分类号： C08J7/06
CPC分类号： H01L21/02576 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L21/02628
摘要： Methods for forming doped silane and/or semiconductor thin films, doped liquid phase silane compositions useful in such methods, and doped semiconductor thin films and structures. The composition is generally liquid at ambient temperatures and includes a Group IVA atom source and a dopant source. By irradiating a doped liquid silane during at least part of its deposition, a thin, substantially uniform doped oligomerized/polymerized silane film may be formed on a substrate. Such irradiation is believed to convert the doped silane film into a relatively high-molecular weight species with relatively high viscosity and relatively low volatility, typically by cross-linking, isomerization, oligomerization and/or polymerization. A film formed by the irradiation of doped liquid silanes can later be converted (generally by heating and annealing/recrystallization) into a doped, hydrogenated, amorphous silicon film or a doped, at least partially polycrystalline silicon film suitable for electronic devices. Thus, the present invention enables use of high throughput, low cost equipment and techniques for making doped semiconductor films of commercial quality and quantity from doped “liquid silicon.”
摘要翻译： 用于形成掺杂的硅烷和/或半导体薄膜的方法，用于这种方法的掺杂的液相硅烷组合物，以及掺杂的半导体薄膜和结构。 组合物在环境温度下通常是液体，并且包括IVA族原子源和掺杂剂源。 通过在其沉积的至少一部分期间照射掺杂的液体硅烷，可以在衬底上形成薄的，基本上均匀的掺杂的低聚/聚合的硅烷膜。 据信这种照射将掺杂的硅烷膜转化成相对高分子量的物质，具有相对较高的粘度和较低挥发性，通常通过交联，异构化，低聚和/或聚合。 通过掺杂的液体硅烷的照射形成的膜可以随后通过加热和退火/重结晶转化成掺杂的，氢化的非晶硅膜或适用于电子器件的掺杂的至少部分多晶的硅膜。 因此，本发明能够使用高通量，低成本的设备和技术来制造掺杂的“液态硅”具有商业质量和数量的掺杂半导体膜。
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公开(公告)号：US08853677B1
公开(公告)日：2014-10-07
申请号：US13162193
申请日：2011-06-16
申请人： Joerg Rockenberger , Yu Chen , Fabio Zürcher , Scott Haubrich
发明人： Joerg Rockenberger , Yu Chen , Fabio Zürcher , Scott Haubrich
IPC分类号： H01L29/08
CPC分类号： H01L21/28518 , C09D11/52 , H01L21/288 , H01L21/76838 , H01L29/456 , H01L29/458
摘要： Metal ink compositions, methods of forming such compositions, and methods of forming conductive layers are disclosed. The ink composition includes a bulk metal, a transition metal source, and an organic solvent. The transition metal source may be a transition metal capable of forming a silicide, in an amount providing from 0.01 to 50 at. % of the transition metal relative to the bulk metal. Conductive structures may be made using such ink compositions by forming a silicon-containing layer on a substrate, printing a metal ink composition on the silicon-containing layer, and curing the composition. The metal inks of the present invention have high conductivity and form low resistivity contacts with silicon, and reduce the number of inks and printing steps needed to fabricate integrated circuits.
摘要翻译： 公开了金属油墨组合物，形成这种组合物的方法，以及形成导电层的方法。 油墨组合物包括本体金属，过渡金属源和有机溶剂。 过渡金属源可以是能够形成硅化物的过渡金属，其量为0.01至50at。 过渡金属相对于本体金属的％。 导电结构可以使用这样的油墨组合物，通过在基底上形成含硅层，在含硅层上印刷金属油墨组合物，并固化组合物。 本发明的金属油墨具有高导电性并与硅形成低电阻接触，并减少制造集成电路所需的油墨数量和印刷步骤。
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公开(公告)号：US07977240B1
公开(公告)日：2011-07-12
申请号：US12371239
申请日：2009-02-13
申请人： Joerg Rockenberger , Yu Chen , Fabio Zürcher , Scott Haubrich
发明人： Joerg Rockenberger , Yu Chen , Fabio Zürcher , Scott Haubrich
IPC分类号： H01L21/44 , H01L21/4763
CPC分类号： H01L21/28518 , C09D11/52 , H01L21/288 , H01L21/76838 , H01L29/456 , H01L29/458
摘要： Metal ink compositions, methods of forming such compositions, and methods of forming conductive layers are disclosed. The ink composition includes a bulk metal, a transition metal source, and an organic solvent. The transition metal source may be a transition metal capable of forming a silicide, in an amount providing from 0.01 to 50 at. % of the transition metal relative to the bulk metal. Conductive structures may be made using such ink compositions by forming a silicon-containing layer on a substrate, printing a metal ink composition on the silicon-containing layer, and curing the composition. The metal inks of the present invention have high conductivity and form low resistivity contacts with silicon, and reduce the number of inks and printing steps needed to fabricate integrated circuits.
摘要翻译： 公开了金属油墨组合物，形成这种组合物的方法，以及形成导电层的方法。 油墨组合物包括本体金属，过渡金属源和有机溶剂。 过渡金属源可以是能够形成硅化物的过渡金属，其量为0.01至50at。 过渡金属相对于本体金属的％。 导电结构可以使用这样的油墨组合物，通过在基底上形成含硅层，在含硅层上印刷金属油墨组合物，并固化组合物。 本发明的金属油墨具有高导电性并与硅形成低电阻接触，并减少制造集成电路所需的油墨数量和印刷步骤。
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公开(公告)号：US20100244133A1
公开(公告)日：2010-09-30
申请号：US12797274
申请日：2010-06-09
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L21/316 , H01L21/02211 , H01L21/02288 , H01L21/02318 , H01L21/3165 , H01L27/1285 , H01L27/1292 , H01L29/66757 , H01L29/78621
摘要： A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.
摘要翻译： 一种用于制造诸如MOS晶体管的电子器件的方法，包括以下步骤：在电功能衬底上形成多个半导体岛，在第一半导体岛子集上或第二子体上印刷第一电介质层， 在半导体岛的第二子集上或之上，以及退火。 第一介电层包含第一掺杂剂，并且（任选的）第二介电层包含不同于第一掺杂剂的第二掺杂剂。 电介质层，半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中，并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。
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公开(公告)号：US20140094004A1
公开(公告)日：2014-04-03
申请号：US13633816
申请日：2012-10-02
IPC分类号： H01L21/336
CPC分类号： H01L27/1292 , H01L29/66757
摘要： A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.
摘要翻译： 一种用于制造诸如MOS晶体管的电子器件的方法，包括以下步骤：在电功能衬底上形成多个半导体岛，在第一半导体岛子集上或第二子体上印刷第一介电层， 在半导体岛的第二子集上或之上，以及退火。 第一介电层包含第一掺杂剂，并且（任选的）第二介电层包含不同于第一掺杂剂的第二掺杂剂。 电介质层，半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中，并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。
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公开(公告)号：US07701011B2
公开(公告)日：2010-04-20
申请号：US11888942
申请日：2007-08-03
CPC分类号： H01L27/12 , H01L27/1292 , H01L29/78618
摘要： An electronic device, including a substrate, a plurality of first semiconductor islands on the substrate, a plurality of second semiconductor islands on the substrate, a first dielectric film on the first subset of the semiconductor islands, second dielectric film on the second semiconductor islands, and a metal layer in electrical contact with the first and second semiconductor islands. The first semiconductor islands and the first dielectric film contain a first diffusible dopant, and the second semiconductor islands and the second dielectric layer film contain a second diffusible dopant different from the first diffusible dopant. The present electronic device can be manufactured using printing technologies, thereby enabling high-throughput, low-cost manufacturing of electrical circuits on a wide variety of substrates.
摘要翻译： 一种电子器件，包括衬底，衬底上的多个第一半导体岛，衬底上的多个第二半导体岛，半导体岛的第一子集上的第一电介质膜，第二半导体岛上的第二电介质膜， 以及与第一和第二半导体岛电接触的金属层。 第一半导体岛和第一介电膜包含第一可扩散掺杂剂，第二半导体岛和第二介电层膜含有不同于第一可扩散掺杂剂的第二可扩散掺杂物。 本电子装置可以使用印刷技术制造，从而能够在各种基板上实现高通量，低成本的电路制造。
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公开(公告)号：US08900915B2
公开(公告)日：2014-12-02
申请号：US13081257
申请日：2011-04-06
申请人： Joerg Rockenberger , Fabio Zürcher , Mao Takashima
发明人： Joerg Rockenberger , Fabio Zürcher , Mao Takashima
IPC分类号： H01L31/078 , H01L21/02 , H01L31/068 , H01L31/18
CPC分类号： H01L21/0237 , H01L21/02428 , H01L21/0243 , H01L21/02494 , H01L21/02532 , H01L21/02587 , H01L21/02628 , H01L21/02661 , H01L21/228 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Epitaxial structures, methods of making epitaxial structures, and devices incorporating such epitaxial structures are disclosed. The methods and the structures employ a liquid-phase Group IVA semiconductor element precursor ink (e.g., including a cyclo- and/or polysilane) and have a relatively good film quality (e.g., texture, density and/or purity). The Group IVA semiconductor element precursor ink forms an epitaxial film or feature when deposited on a (poly)crystalline substrate surface and heated sufficiently for the Group IVA semiconductor precursor film or feature to adopt the (poly)crystalline structure of the substrate surface. Devices incorporating a selective emitter that includes the present epitaxial structure may exhibit improved power conversion efficiency relative to a device having a selective emitter made without such a structure due to the improved film quality and/or the perfect interface formed in regions between the epitaxial film and contacts formed on the film.
摘要翻译： 公开了外延结构，制造外延结构的方法和结合这种外延结构的器件。 方法和结构采用液相IVA族半导体元件前体油墨（例如，包括环和/或聚硅烷）并且具有相对较好的膜质量（例如质地，密度和/或纯度）。 当IVA半导体元件前体油墨沉积在（多）晶体衬底表面上时，IVA半导体元件前体油墨形成外延膜或特征，并充分加热以使IVA族半导体前体膜或特征采用衬底表面的（多）晶体结构。 结合包括本外延结构的选择性发射极的器件相对于具有选择性发射极的器件而言，具有提高的功率转换效率，由于改善的膜质量和/或在外延膜和 在电影上形成的触点。
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公开(公告)号：US08304780B2
公开(公告)日：2012-11-06
申请号：US12797274
申请日：2010-06-09
IPC分类号： H01L29/10 , H01L29/76 , H01L31/036 , H01L31/112
CPC分类号： H01L21/316 , H01L21/02211 , H01L21/02288 , H01L21/02318 , H01L21/3165 , H01L27/1285 , H01L27/1292 , H01L29/66757 , H01L29/78621
摘要： A method for making an electronic device, such as a MOS transistor, including the steps of forming a plurality of semiconductor islands on an electrically functional substrate, printing a first dielectric layer on or over a first subset of the semiconductor islands and optionally a second dielectric layer on or over a second subset of the semiconductor islands, and annealing. The first dielectric layer contains a first dopant, and the (optional) second dielectric layer contains a second dopant different from the first dopant. The dielectric layer(s), semiconductor islands and substrate are annealed sufficiently to diffuse the first dopant into the first subset of semiconductor islands and, when present, the second dopant into the second subset of semiconductor islands.
摘要翻译： 一种用于制造诸如MOS晶体管的电子器件的方法，包括以下步骤：在电功能衬底上形成多个半导体岛，在第一半导体岛子集上或第二子体上印刷第一介电层， 在半导体岛的第二子集上或之上，以及退火。 第一介电层包含第一掺杂剂，并且（任选的）第二介电层包含不同于第一掺杂剂的第二掺杂剂。 电介质层，半导体岛和衬底被充分退火以将第一掺杂剂扩散到半导体岛的第一子集中，并且当存在时将第二掺杂剂扩散到半导体岛的第二子集中。
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