公开(公告)号：US20160276155A1

公开(公告)日：2016-09-22

申请号：US15037940

申请日：2014-11-22

Applicant: ENTEGRIS, INC.

Inventor： Thomas M. Cameron ,  Emanuel I. Cooper ,  Sung Han

IPC: H01L21/22 ,  H01L21/228 ,  H01L21/225

CPC classification number: H01L21/2225 ,  H01L21/2254 ,  H01L21/228

Abstract: A doping process is described, which includes applying to a substrate a film of dopant material that bonds to the substrate by at least one of hydrogen bonding and covalent bonding; encapsulating the film on the substrate with an encapsulant material, and subjecting the encapsulated film to rapid thermal processing to cause dopant from the dopant material to migrate into the substrate. The film of dopant material is applied from a dopant composition selected from among: (i) dopant compositions comprising an aqueous or glycol solution comprising an inorganic dopant compound; (ii) dopant compositions comprising an arsenic, phosphorus, boron, or antimony compound in which ligands or moieties coordinated to an arsenic, phosphorus, boron, or antimony central atom have coordination bond energies that are lower than those associated with coordinating bonds of said central atom to oxygen or carbon; (iii) dopant compositions comprising a coordinated moiety that selectively and covalently bonds to the substrate; (iv) dopant compositions comprising a compound that undergoes hydrolysis and alcoholysis to covalently bond a dopant functionality to the substrate in said film of dopant material; (v) dopant compositions comprising precursor vapor of an organodopant compound; (vi) dopant compositions interactive with a surface functionality of the substrate to bind the dopant composition to the substrate, wherein the substrate comprises a silicon surface comprising said surface functionality; (vii) dopant compositions interactive with the substrate to covalently bond with a pretreated and/or modified silicon surface thereof; and (viii) dopant compositions interactive with the substrate to bond with the substrate on a silicon surface thereof that has been modified by a treatment comprising at least one of: (A) contacting the silicon surface with a chemical solution; (B) exposing the silicon surface to plasma; and (C) exposing the silicon surface to ultraviolet radiation.

公开(公告)号：US10957547B2

公开(公告)日：2021-03-23

申请号：US15742334

申请日：2016-07-07

Applicant: Entegris, Inc.

Inventor： Steven Bilodeau ,  Emanuel I. Cooper

IPC: H01L21/306 ,  C09K13/08 ,  C09K13/06

Abstract: Compositions useful for the selective removal of silicon germanium materials relative to germanium-containing materials and silicon-containing materials from a microelectronic device having same thereon. The removal compositions include at least one diol and are tunable to achieve the required SiGe:Ge removal selectivity and etch rates.

公开(公告)号：US10790187B2

公开(公告)日：2020-09-29

申请号：US15873531

申请日：2018-01-17

Applicant: Entegris, Inc.

Inventor： Emanuel I. Cooper ,  Makonnen Payne ,  WonLae Kim ,  Eric Hong ,  Sheng-Hung Tu ,  Chieh Ju Wang ,  Chia-Jung Hsu

IPC: C11D7/50 ,  H01L21/768 ,  B08B7/00 ,  H01L21/02 ,  C11D3/395 ,  C23G1/20 ,  C11D7/32 ,  C11D7/36 ,  C11D3/00 ,  C11D3/39 ,  C09K13/00 ,  G03F7/42 ,  C11D7/26 ,  C11D7/08 ,  C23G1/18 ,  C11D11/00 ,  C23G1/26 ,  H01L21/311

Abstract: The disclosure relates to a cleaning composition that aids in the removal of post-etch residues and aluminum-containing material, e.g., aluminum oxide, in the production of semiconductors that utilize an aluminum-containing etch stop layer. The compositions have a high selectivity for post-etch residue and aluminum-containing materials relative to low-k dielectric materials, cobalt-containing materials and other metals on the microelectronic device.

公开(公告)号：US10460954B2

公开(公告)日：2019-10-29

申请号：US15316358

申请日：2015-06-02

Applicant: ENTEGRIS, INC.

Inventor： Emanuel I. Cooper ,  Steven Lippy ,  Lingyan Song

IPC: C23F1/10 ,  H01L21/311 ,  C23F1/26 ,  H01L21/02 ,  C09K13/08 ,  C09K13/10 ,  C11D7/08 ,  C11D7/14 ,  C11D7/22 ,  C11D7/26 ,  C11D7/28 ,  C11D7/32 ,  C11D7/34 ,  C11D7/36 ,  C11D7/50 ,  C11D11/00 ,  H01L21/027

Abstract: A liquid removal composition and process for removing anti-reflective coating (ARC) material and/or post-etch residue from a substrate having same thereon. The composition achieves at least partial removal of ARC material and/or post-etch residue in the manufacture of integrated circuitry with minimal etching of metal species on the substrate, such as aluminum, copper and cobalt alloys, and without damage to low-k dielectric and nitride-containing materials employed in the semiconductor architecture.

公开(公告)号：US10446389B2

公开(公告)日：2019-10-15

申请号：US15669238

申请日：2017-08-04

Applicant: Entegris, Inc.

Inventor： Emanuel I. Cooper ,  Jeffery A. Barnes

IPC: H01L21/311 ,  H01L21/02

Abstract: Compositions and methods for removing lanthanoid-containing solids and/or species from the surface of a microelectronic device or microelectronic device fabrication hardware. Preferably, the lanthanoid-containing solids and/or species comprise cerium. The composition is preferably substantially devoid of fluoride ions.

公开(公告)号：US20170338104A1

公开(公告)日：2017-11-23

申请号：US15669238

申请日：2017-08-04

Applicant: Entegris, Inc.

Inventor： Emanuel I. Cooper ,  Jeffery A. Barnes

IPC: H01L21/02 ,  H01L21/311

CPC classification number: H01L21/02076 ,  H01L21/02057 ,  H01L21/31133

Abstract: Compositions and methods for removing lanthanoid-containing solids and/or species from the surface of a microelectronic device or microelectronic device fabrication hardware. Preferably, the lanthanoid-containing solids and/or species comprise cerium. The composition is preferably substantially devoid of fluoride ions.

公开(公告)号：US11978622B2

公开(公告)日：2024-05-07

申请号：US15324588

申请日：2015-06-24

Applicant: Entegris, Inc.

Inventor： Lingyan Song ,  Steven Lippy ,  Emanuel I. Cooper

IPC: H01L21/02 ,  B08B3/08 ,  C11D1/00 ,  C11D1/66 ,  C11D3/04 ,  C11D3/24 ,  C11D3/30 ,  C11D3/36 ,  C11D3/37 ,  C11D3/43 ,  C11D7/08 ,  C11D7/10 ,  C11D7/28 ,  C11D11/00

CPC classification number: H01L21/02068 ,  B08B3/08 ,  C11D1/008 ,  C11D1/667 ,  C11D3/042 ,  C11D3/046 ,  C11D3/245 ,  C11D3/30 ,  C11D3/361 ,  C11D3/3707 ,  C11D3/43 ,  C11D7/08 ,  C11D7/10 ,  C11D7/28 ,  C11D11/0047 ,  H01L21/02063

Abstract: Cleaning compositions and processes for cleaning post-plasma etch residue from a microelectronic device having said residue thereon. The composition achieves highly efficacious cleaning of the residue material, including titanium-containing, copper-containing, tungsten-containing, and/or cobalt-containing post-etch residue from the microelectronic device while simultaneously not damaging the interlevel dielectric, metal interconnect material, and/or capping layers also present thereon.

公开(公告)号：US11697767B2

公开(公告)日：2023-07-11

申请号：US17341138

申请日：2021-06-07

Applicant: ENTEGRIS, INC.

Inventor： Steven Michael Bilodeau ,  SeongJin Hong ,  Hsing-Chen Wu ,  Min-Chieh Yang ,  Emanuel I. Cooper

IPC: C09K13/06 ,  H01L21/311 ,  C09K13/04 ,  C09K13/00 ,  H01L21/3213 ,  C09K13/08 ,  H01L21/306 ,  C23F1/14

CPC classification number: C09K13/06 ,  C09K13/00 ,  C09K13/04 ,  C09K13/08 ,  C23F1/14 ,  H01L21/30604 ,  H01L21/311 ,  H01L21/31111 ,  H01L21/32134

Abstract: Compositions useful for the selective removal of silicon nitride materials relative to polysilicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon are provided. The compositions of the invention are particularly useful in the etching of 3D NAND structures.

公开(公告)号：US11530356B2

公开(公告)日：2022-12-20

申请号：US17388990

申请日：2021-07-29

Applicant: ENTEGRIS, INC.

Inventor： Steven M. Bilodeau ,  Emanuel I. Cooper ,  Daniela White

IPC: C09K13/06 ,  H01L21/311 ,  H01L21/306 ,  H01L21/02 ,  H01L21/3213 ,  C09K13/08

Abstract: Provided are wet etching compositions and methods for etching a surface of a microelectronic device that contains silicon nitride (SiN), silicon oxide, and polysilicon which in one embodiment is in contact with a surface comprising a compound which is electrochemically more noble than silicon, and optionally other materials which may include a conductive material, a semiconducting material, or an insulating material useful in a microelectronic device, or a processing material that is useful in preparing a microelectronic device.

公开(公告)号：US10472567B2

公开(公告)日：2019-11-12

申请号：US14772652

申请日：2014-03-04

Applicant: Entegris, Inc.

Inventor： Li-Min Chen ,  Emanuel I. Cooper ,  Steven Lippy ,  Lingyan Song ,  Chia-Jung Hsu ,  Sheng-Hung Tu ,  Chieh Ju Wang

IPC: C09K13/00 ,  H01L21/3213 ,  C23F1/14 ,  C23F1/26 ,  C23G1/02 ,  C09K13/08 ,  C09K13/10 ,  G03F7/42

Abstract: Semi-aqueous compositions useful for the selective removal of titanium nitride and/or photoresist etch residue materials relative to metal conducting, e.g., tungsten and copper, and insulating materials from a microelectronic device having same thereon. The semi-aqueous compositions contain at least one oxidant, at least one etchant, and at least one organic solvent, may contain various corrosion inhibitors to ensure selectivity.