Abstract:
There is provided a pattern forming method comprising: (i) a step of forming a first film on a substrate by using a first resin composition (I), (ii) a step of forming a second film on the first film by using a second resin composition (II) different from the resin composition (I), (iii) a step of exposing a multi-layered film having the first film and the second film, and (iv) a step of developing the first film and the second film in the exposed multi-layered film by using an organic solvent-containing developer to form a negative pattern.
Abstract:
There is provided a manufacturing method for a bonded body, comprising: preparing a substrate A having a surface on which a wiring line terminal is provided; forming a polyimide-containing precursor portion on the surface of the substrate A, where the wiring line terminal is provided on the surface of the substrate A; preparing a substrate B having a surface on which a wiring line terminal is provided; and bonding the surface of the substrate A, where the polyimide-containing precursor portion is provided on the surface of the substrate A, to the surface of the substrate B, where the wiring line terminal is provided on the surface of the substrate B, wherein a difference between a cyclization rate of a polyimide in the polyimide-containing precursor portion before the bonding of the surface of the substrate A and a cyclization rate of a polyimide in a polyimide-containing portion formed at a bonded portion after the bonding of the surface of the substrate A is 5% or more.
Abstract:
There is provided a laminate body which is capable of forming an excellent pattern on an organic semiconductor.A laminate body includes at least a water-soluble resin film and a resist film formed of a chemically amplified photosensitive resin composition on a surface of an organic semiconductor film in this order, in which the chemically amplified photosensitive resin composition contains a photoacid generator which is decomposed in an amount of 80% by mole or greater when exposed to light under the condition of 100 mJ/cm2 or greater at a wavelength of 365 nm, a mask pattern is formed by an exposed portion being hardly soluble in a developer containing an organic solvent, and the formed mask pattern is used as an etching mask.
Abstract translation:提供能够在有机半导体上形成优异图案的层叠体。 层叠体依次包含至少一种水溶性树脂膜和由化学放大型感光性树脂组合物形成的抗蚀剂膜,其中化学增幅感光性树脂组合物含有光致酸产生剂,该光致酸性发生剂为 当在365nm的波长为100mJ / cm 2以上的条件下曝光时,以80摩尔%以上的量分解,掩模图案由几乎不溶于含有有机物的显影剂的露出部分形成 溶剂,并且将形成的掩模图案用作蚀刻掩模。
Abstract:
By a temporary adhesive for production of semiconductor device containing (A) a radical polymerizable monomer or oligomer containing a fluorine atom or a silicon atom, (B) a polymer compound, and (C) a radical polymerization initiator, a temporary adhesive for production of semiconductor device, which is excellent in coating property, which reduces a problem of generation of gas therefrom in the temporary support even under high temperature condition when the member to be processed (for example, a semiconductor wafer) is subjected to a mechanical or chemical processing, and further which can easily release the temporary support for the member processed without imparting damage to the member processed even after being subjected to a process at a high temperature, and an adhesive support and a production method of semiconductor device using the same are provided.
Abstract:
A pattern forming method contains: (i) a step of forming a first film on a substrate by using a first resin composition (I), (ii) a step of forming a second film on the first film by using a second resin composition (II) different from the resin composition (I), (iii) a step of exposing a multi-layered film having the first film and the second film, and (iv) a step of developing the first film and the second film in the exposed multi-layered film by using an organic solvent-containing developer to form a negative pattern.
Abstract:
Provided is a method of forming a pattern, including (a) forming, into a film, an actinic-ray- or radiation-sensitive resin composition comprising a resin that when acted on by an acid, increases its polarity and a compound that when exposed to actinic rays or radiation, generates an acid, (b) exposing the film to light, (c) developing the exposed film with a developer comprising an organic solvent to thereby form a negative pattern, and (d) coating the pattern with a composition comprising a resin comprising any of repeating units of general formula (I) below, a crosslinker component and an alcohol solvent to thereby induce crosslinking with the resin as a constituent of the pattern and thus form a crosslinked layer, in which R1 represents any of an alkyl group, an alkoxy group, an alkylcarbonyloxy group and an alkoxycarbonyl group.
Abstract:
Provided is a laminate that includes a base, an organic layer, a protective layer and a photo-sensitive layer in this order, the photo-sensitive layer contains an onium salt-type photo-acid generator that contains an anion moiety having a group with at least one ring structure selected from the group consisting of condensed ring structure, bridged ring structure and spiro ring structure, the photo-sensitive layer is intended for development with use of a developing solution, and the protective layer is intended for stripping with use of a stripping solution; and also provided are a composition used for forming the protective layer or the photo-sensitive layer contained in the laminate; and a laminate forming kit used for forming the laminate.
Abstract:
At least one embodiment relates to a method for photolithographic patterning of an organic layer on a substrate. The method includes providing a water-soluble shielding layer over the organic layer. In addition, the method includes providing a photoresist layer on the water-soluble shielding layer. The method also includes photolithographic patterning of the photoresist layer to form a patterned photoresist layer. Further, the method includes etching the water-soluble shielding layer and the organic layer, using the patterned photoresist layer as a mask, to form a patterned water-soluble shielding layer and a patterned organic layer. Still further, the method includes removing the patterned water-soluble shielding layer. The method includes, before providing the water-soluble shielding layer, providing a hydrophobic protection layer having a hydrophobic upper surface on the organic layer.
Abstract:
Provided are a laminate which includes an organic semiconductor film, a water-soluble resin layer, and a photosensitive resin layer and in which cracks are unlikely to occur; and a kit.The laminate includes a water-soluble resin layer containing a water-soluble resin and a photosensitive resin layer containing a photosensitive resin, which are provided in this order on an organic semiconductor film. The water-soluble resin layer and the photosensitive resin layer are adjacent to each other, the water-soluble resin is at least one of polyvinylpyrrolidone having a weight-average molecular weight of 300,000 or greater or polyvinyl alcohol having a weight-average molecular weight of 15,000 or greater, and the photosensitive resin has a weight-average molecular weight of 30,000 or greater.
Abstract:
A method is provided for photolithographic patterning of an organic layer, comprising: providing a shielding layer on the organic layer; providing a photoresist layer on the shielding layer; illuminating the photoresist layer through a shadow mask; developing the photoresist layer, thereby forming a patterned photoresist layer; performing a first dry etching step using the patterned photoresist layer as a mask, thereby removing at least an upper portion of the photoresist layer and completely removing the shielding layer at locations not covered by the photoresist layer; performing a second dry etching step using the patterned shielding layer as a mask, thereby removing the organic layer at locations not covered by the shielding layer; and removing the shielding layer, wherein removing the shielding layer comprises exposing it to water. A method of the present disclosure may advantageously be used in a process for fabricating organic semiconductor based devices and circuits.