公开(公告)号：US5343486A

公开(公告)日：1994-08-30

申请号：US962725

申请日：1992-10-19

申请人： Kazuhiko Itaya ,  Genichi Hatakoshi ,  Koichi Nitta

发明人： Kazuhiko Itaya ,  Genichi Hatakoshi ,  Koichi Nitta

IPC分类号： H01S5/00 ,  H01S5/028 ,  H01S5/042 ,  H01S5/06 ,  H01S5/10 ,  H01S5/12 ,  H01S5/16 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S3/15

CPC分类号： H01S5/16 ,  H01S5/12 ,  H01S5/32325 ,  H01S5/028 ,  H01S5/0601 ,  H01S5/10 ,  H01S5/168 ,  H01S5/2231 ,  H01S5/3202

摘要： According to this invention, a semiconductor laser device includes a compound semiconductor substrate, a double hetero structure formed on the compound semiconductor substrate and having an active layer and first and second cladding layers which interpose the active layer, a current blocking region formed in one facet portion of the double hetero structure in a resonator direction. A reflecting layer is arranged on the other facet of the double hetero structure in the resonator direction and has a reflectance higher than that of a natural cleavage surface, thereby shifting the oscillation wavelength of the laser device to a long wavelength side with respect to the wavelength of spontaneous radiation emitted from one facet of the double hetero structure.

摘要翻译： 根据本发明，半导体激光器件包括化合物半导体衬底，在化合物半导体衬底上形成的具有有源层的双异质结构以及插入有源层的第一和第二覆层，形成在一个面上的电流阻挡区 部分的双异质结构在谐振器方向上。 在双异质结构的另一方面，在谐振器方向上设置反射层，其反射率高于天然解理面的反射率，从而将激光器件的振荡波长相对于波长 从双异质结构的一个面发射的自发辐射。

公开(公告)号：US5282218A

公开(公告)日：1994-01-25

申请号：US896536

申请日：1992-06-09

申请人： Masaki Okajima ,  Koichi Nitta ,  Genichi Hatakoshi ,  Yukie Nishikawa ,  Kazuhiko Itaya

发明人： Masaki Okajima ,  Koichi Nitta ,  Genichi Hatakoshi ,  Yukie Nishikawa ,  Kazuhiko Itaya

IPC分类号： H01S5/00 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/32 ,  H01S5/2231 ,  H01S5/2232 ,  H01S5/3201 ,  H01S5/3202 ,  H01S5/321 ,  H01S5/3211 ,  H01S5/3218 ,  H01S5/32325

摘要： A semiconductor laser device for radiating a laser beam from a double heterostructure section in which injected carriers having an energy source of the laser beam are confined consists of a compound semiconductor substrate with a prescribed lattice constant for loading the double heterostructure section, a lattice mismatched active layer with a first lattice constant which is 0.5% to 2.0% larger than the lattice constant of the substrate in the double heterostructure section for radiating the laser beam, a lattice mismatched cladding layer with a second lattice constant which is 0.2% to 2.0% smaller than the lattice constant of the substrate for confining the injected carriers in the active layer, and a cladding layer for confining the injected carriers in the active layer by co-operating with the lattice mismatched cladding layer.

摘要翻译： 一种半导体激光器件，用于从双异质结部分发射激光束，其中具有激光束能量源的注入载流子被限制在一起，由具有用于加载双异质结部分的规定晶格常数的化合物半导体衬底，晶格失配的有源 层，其具有比用于照射激光的双异质结部分中的衬底的晶格常数大0.5％至2.0％的第一晶格常数，具有小于0.2％至2.0％的第二晶格常数的晶格失配覆层 比用于将注入的载流子限制在有源层中的基板的晶格常数以及用于通过与晶格失配包层合作来限制注入的载流子在有源层中的包覆层。

公开(公告)号：US5389800A

公开(公告)日：1995-02-14

申请号：US128113

申请日：1993-09-29

申请人： Kazuhiko Itaya ,  Genichi Hatakoshi

发明人： Kazuhiko Itaya ,  Genichi Hatakoshi

IPC分类号： H01L33/14 ,  H01L33/28 ,  H01L33/30 ,  H01S5/00 ,  H01S5/327 ,  H01L29/161 ,  H01L29/205 ,  H01L33/00

CPC分类号： H01L33/40 ,  H01S5/327 ,  H01L33/145

摘要： According to the present invention, there is provided a semiconductor light-emitting device including a light-emitting layer having a first semiconductor layer, and formed on a main surface of one side of a semiconductor substrate, an upper-most layer of the light-emitting layer made of a compound semiconductor containing elements from the group II and group VI of the periodic table, the second semiconductor layer formed on the first semiconductor layer, and made of a material having a lattice constant different from that of the material of the semiconductor substrate by at least 2%, the second semiconductor layer having a film thickness of a critical film thickness, the first electrode formed on a main surface of the other side of the semiconductor substrate, and the second electrode formed on the second semiconductor layer.

摘要翻译： 根据本发明，提供了一种半导体发光器件，其包括具有第一半导体层的发光层，并且形成在半导体衬底的一侧的主表面上， 由包含元素周期表的第II族和第VI族的元素的化合物半导体制成的发光层，形成在第一半导体层上的第二半导体层，并且由与半导体材料的晶格常数不同的晶格常数 衬底至少2％，第二半导体层具有临界膜厚度的膜厚度，形成在半导体衬底的另一侧的主表面上的第一电极和形成在第二半导体层上的第二电极。

公开(公告)号：US5321712A

公开(公告)日：1994-06-14

申请号：US10844

申请日：1993-01-29

申请人： Kazuhiko Itaya ,  Koichi Nitta ,  Genichi Hatakoshi ,  Yukie Nishikawa ,  Hideto Sugawara ,  Mariko Suzuki

发明人： Kazuhiko Itaya ,  Koichi Nitta ,  Genichi Hatakoshi ,  Yukie Nishikawa ,  Hideto Sugawara ,  Mariko Suzuki

IPC分类号： H01L33/12 ,  H01L33/14 ,  H01L33/30 ,  H01S5/00 ,  H01S5/042 ,  H01S5/223 ,  H01S5/30 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01L33/30 ,  H01S5/32308 ,  H01S5/223 ,  H01S5/2231 ,  H01S5/3086 ,  H01S5/321 ,  H01S5/3211 ,  H01S5/32325

摘要： A semiconductor light-emitting element includes a semiconductor substrate of a first conductivity type, a lower cladding layer formed on the semiconductor substrate and constituted by an InGaAlP-based compound of the first conductivity type, an active layer formed on the lower cladding layer, and constituted by a material selected from the group consisting of GaAs, GaAlAs, and InGaAs, and an upper cladding layer formed on the active layer, and constituted by the InGaAlP-based compound of a second conductivity type, wherein the InGaAlP-based compound is represented by a formula In.sub.y (Ga.sub.1-x Al.sub.x).sub.y P, where x is in the range of 0.3 to 0.7 and y is in the range of 0.45 to 0.55.

摘要翻译： 半导体发光元件包括第一导电类型的半导体衬底，形成在半导体衬底上并由第一导电类型的InGaAlP基化合物构成的下包层，形成在下敷层上的有源层，以及 由选自GaAs，GaAlAs和InGaAs的材料构成，以及形成在有源层上的上覆层，由第二导电类型的InGaAlP基化合物构成，其中以InGaAlP为基础的化合物被表示 通过式Iny（Ga1-xAlx）yP，其中x在0.3至0.7的范围内，y在0.45至0.55的范围内。

公开(公告)号：US5305341A

公开(公告)日：1994-04-19

申请号：US836763

申请日：1992-02-19

申请人： Yukie Nishikawa ,  Koichi Nitta ,  Genichi Hatakoshi ,  Masaki Okajima ,  Minoru Watanabe ,  Kazuhiko Itaya

发明人： Yukie Nishikawa ,  Koichi Nitta ,  Genichi Hatakoshi ,  Masaki Okajima ,  Minoru Watanabe ,  Kazuhiko Itaya

IPC分类号： H01S5/00 ,  H01S5/22 ,  H01S5/223 ,  H01S5/32 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01L33/30 ,  H01L33/0062 ,  H01S5/2231 ,  H01S5/32325 ,  H01S5/2201 ,  H01S5/2209 ,  H01S5/221 ,  H01S5/2219 ,  H01S5/223 ,  H01S5/3202 ,  H01S5/3206 ,  H01S5/3207 ,  H01S5/3211

摘要： According to this invention, in a semiconductor laser, an n-type InGaAlP cladding layer, an InGaP active layer, and a p-type InGaAlP cladding layer are sequentially grown on an n-type GaAs substrate to form a double hetero structure. The active layer is constituted by an ordered structure having regularity in the directions, and the p-type cladding layer is constituted by a disordered structure. Band discontinuity in conduction band between the active layer and the p-type cladding layer is increased to improve the temperature characteristics of the laser.

摘要翻译： 根据本发明，在半导体激光器中，在n型GaAs衬底上依次生长n型InGaAlP包覆层，InGaP有源层和p型InGaAlP包层，以形成双异质结构。 有源层由沿<111>方向规则性的有序结构构成，p型覆层由无序结构构成。 有源层和p型覆层之间导带的带不连续性增加，以提高激光器的温度特性。

公开(公告)号：US5740192A

公开(公告)日：1998-04-14

申请号：US767673

申请日：1996-12-17

申请人： Ako Hatano ,  Yasuo Ohba ,  Hidetoshi Fujimoto ,  Kazuhiko Itaya ,  Johji Nishio

发明人： Ako Hatano ,  Yasuo Ohba ,  Hidetoshi Fujimoto ,  Kazuhiko Itaya ,  Johji Nishio

IPC分类号： H01S5/323 ,  H01S3/19 ,  H01L33/00

CPC分类号： H01S5/32341 ,  H01S2302/00

摘要： A semiconductor laser exhibiting an oscillation wavelength of 450 nm or less and comprising a substrate, a lower clad layer formed on or above the substrate and mainly composed of a III-V Group compound semiconductor, an active layer formed directly on the lower clad layer and mainly composed of a III-V Group compound semiconductor, and an upper p-type clad layer formed directly on the active layer and mainly composed of a III-V Group compound semiconductor. This semiconductor laser is characterized in that the upper p-type clad layer contains Mg, Si and at least one impurities for compensating residual donors.

摘要翻译： 表现出450nm以下的振荡波长的半导体激光器，其特征在于，具有基板，形成在所述基板上或上方的主要由III-V族化合物半导体构成的下部包层，直接形成在所述下部包层上的有源层和 主要由III-V族化合物半导体构成，上部p型覆盖层直接形成在主要由III-V族化合物半导体构成的有源层上。 该半导体激光器的特征在于，上部p型覆盖层含有Mg，Si和用于补偿残余供体的至少一种杂质。

公开(公告)号：US05998810A

公开(公告)日：1999-12-07

申请号：US980256

申请日：1997-11-28

申请人： Ako Hatano ,  Yasuo Ohba ,  Hidetoshi Fujimoto ,  Kazuhiko Itaya ,  Johji Nishio

发明人： Ako Hatano ,  Yasuo Ohba ,  Hidetoshi Fujimoto ,  Kazuhiko Itaya ,  Johji Nishio

IPC分类号： H01S5/323 ,  H01L33/00

CPC分类号： H01S5/32341 ,  H01S2302/00

摘要： A semiconductor light-emitting diode exhibiting an oscillation wavelength of 450 nm or less and comprising a substrate, a lower clad layer formed on or above the substrate and mainly composed of a III-V Group compound semiconductor, an active layer formed directly on the lower clad layer and mainly composed of a III-V Group compound semiconductor, and an upper p-type clad layer formed directly on the active layer and mainly composed of a III-V Group compound semiconductor. This semiconductor light-emitting diode is characterized in that the upper p-type clad layer contains Mg, Si and at least one impurities for compensating residual donors.

摘要翻译： 表现出450nm以下的振荡波长的半导体发光二极管，其特征在于，具有基板，形成在所述基板上或上方的下部包层，主要由III-V族化合物半导体构成，所述活性层直接形成在所述下部 主要由III-V族化合物半导体构成的上层p型覆盖层和主要由III-V族化合物半导体构成的有源层上直接形成的上部p型覆盖层。 该半导体发光二极管的特征在于，上p型覆盖层含有Mg，Si和至少一种用于补偿残留供体的杂质。

公开(公告)号：US08648431B2

公开(公告)日：2014-02-11

申请号：US13220116

申请日：2011-08-29

申请人： Kazuhide Abe ,  Tadahiro Sasaki ,  Atsuko Iida ,  Kazuhiko Itaya ,  Takashi Kawakubo

发明人： Kazuhide Abe ,  Tadahiro Sasaki ,  Atsuko Iida ,  Kazuhiko Itaya ,  Takashi Kawakubo

IPC分类号： H01L29/84

CPC分类号： H03J3/20 ,  H03B5/326 ,  H03H9/02566

摘要： According to one embodiment, an acoustic semiconductor device includes an element unit, and a first terminal. The element unit includes an acoustic resonance unit. The acoustic resonance unit includes a semiconductor crystal. An acoustic standing wave is excitable in the acoustic resonance unit and is configured to be synchronously coupled with electric charge density within at least one portion of the semiconductor crystal via deformation-potential coupling effect. The first terminal is electrically connected to the element unit. At least one selected from outputting and inputting an electrical signal is implementable via the first terminal. The electrical signal is coupled with the electric charge density. The outputting the electrical signal is from the acoustic resonance unit, and the inputting the electrical signal is into the acoustic resonance unit.

摘要翻译： 根据一个实施例，声学半导体器件包括元件单元和第一端子。 元件单元包括声共振单元。 声共振单元包括半导体晶体。 声驻波在声共振单元中是可兴奋的，并且被配置为通过变形电势耦合效应与半导体晶体的至少一部分内的电荷密度同步耦合。 第一端子电连接到元件单元。 从输出和输入电信号中选出的至少一个可经由第一终端实现。 电信号与电荷密度耦合。 输出电信号来自声共振单元，并且输入电信号进入声共振单元。

公开(公告)号：US20130256009A1

公开(公告)日：2013-10-03

申请号：US13677840

申请日：2012-11-15

申请人： Tadahiro SASAKI ,  Kazuhiko Itaya ,  Hiroshi Yamada

发明人： Tadahiro SASAKI ,  Kazuhiko Itaya ,  Hiroshi Yamada

IPC分类号： H05K1/16 ,  H05K1/09

CPC分类号： H05K1/162 ,  H01L2224/16225 ,  H01L2924/0002 ,  H05K1/0236 ,  H05K1/09 ,  H05K1/185 ,  H05K2201/0715 ,  H01L2924/00

摘要： An EBG structure according to an embodiment includes an electrode unit made of a first conductor and provided with a space, a patch unit provided approximately parallel to the electrode unit and made of a second conductor, an insulating layer provided between the electrode unit and the patch unit, a first via provided between the patch unit and the electrode unit in the insulating layer and connected to the patch unit and the electrode unit, and a second via provided between the patch unit and the space in the insulating layer, connected to the patch unit, and not connected to the electrode unit.

摘要翻译： 根据实施例的EBG结构包括由第一导体制成并且设置有空间的电极单元，设置成大致平行于电极单元并由第二导体制成的贴片单元，设置在电极单元和贴片之间的绝缘层 单元，在所述绝缘层中的所述贴片单元和所述电极单元之间设置并连接到所述贴片单元和所述电极单元的第一通孔，以及设置在所述贴片单元和所述绝缘层中的与所述贴片 单元，而不连接到电极单元。

公开(公告)号：US08324707B2

公开(公告)日：2012-12-04

申请号：US13050545

申请日：2011-03-17

申请人： Tadahiro Sasaki ,  Kazuhide Abe ,  Atsuko Iida ,  Kazuhiko Itaya

发明人： Tadahiro Sasaki ,  Kazuhide Abe ,  Atsuko Iida ,  Kazuhiko Itaya

IPC分类号： H01L27/105

CPC分类号： H01L27/088 ,  H01L21/823493 ,  H01L27/0207 ,  H01L27/0922 ,  H01L29/41758 ,  H01L29/4238 ,  H01L29/78

摘要： According to an embodiment, a power amplifier is provided with at least one first growth ring gate structure and multiple second growth ring gate structures. The first growth ring gate structure is bounded by a semiconductor layer and performs a power amplification operation. The multiple second growth ring gate structures are bounded by the semiconductor layer and are arranged adjacently around the first growth ring gate structure in a surrounding manner. When the first growth ring gate structure performs a power amplification operation, the multiple second growth ring gate structures are depleted by applying a reverse bias to the multiple second growth ring gate structures whereby the depleted multiple second growth ring gate structures isolate the first growth ring gate structure from a surrounding portion.

摘要翻译： 根据实施例，功率放大器设置有至少一个第一增长环栅极结构和多个第二增长环栅极结构。 第一生长环栅极结构由半导体层限制并进行功率放大操作。 多个第二生长环形栅极结构由半导体层限制，并且以周围的方式围绕第一生长环栅极结构相邻布置。 当第一生长环栅极结构执行功率放大操作时，通过向多个第二生长环栅极结构施加反向偏压来耗尽多个第二生长环栅结构，由此耗尽的多个第二生长环栅极结构将第一生长环栅极隔离 结构从周围部分。