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公开(公告)号：US20150197845A1
公开(公告)日：2015-07-16
申请号：US14669258
申请日：2015-03-26
Applicant: H.C. STARCK, INC.
Inventor： Gary Alan Rozak , Mark E. Gaydos , Patrick Alan Hogan , Shuwei Sun
CPC classification number: C23C14/185 , B22F2998/10 , C22C1/045 , C22C27/04 , C23C14/3407 , C23C14/3414 , C23C14/5873 , G06F3/041 , G06F2203/04103 , Y10T428/12743 , Y10T428/12826 , Y10T428/265 , Y10T428/31678 , B22F1/0003 , B22F3/15
Abstract: The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of niobium or vanadium, and a third metal element selected from the group consisting of titanium, chromium, niobium, vanadium, and tantalum, wherein the third metal element is different from the second metal element, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in the second metal element, and a phase that is rich in the third metal element.
Abstract translation: 本发明涉及包括50原子％或更多的钼，铌或钒的第二金属元素和选自钛，铬，铌，钒和钽的第三金属元素的溅射靶，其中第三金属 元素不同于第二金属元素，以及由溅射靶制备的沉积膜。 在本发明的优选方面，溅射靶包括富含钼的相，富含第二金属元素的相和富含第三金属元素的相。
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12.发明授权公开(公告)号：US09017762B2
公开(公告)日：2015-04-28
申请号：US13856617
申请日：2013-04-04
Applicant: H.C. Starck, Inc.
Inventor： Gary Alan Rozak , Mark E. Gaydos , Patrick Alan Hogan , Shuwei Sun
CPC classification number: C23C14/185 , B22F2998/10 , C22C1/045 , C22C27/04 , C23C14/3407 , C23C14/3414 , C23C14/5873 , G06F3/041 , G06F2203/04103 , Y10T428/12743 , Y10T428/12826 , Y10T428/265 , Y10T428/31678 , B22F1/0003 , B22F3/15
Abstract: The invention relates to sputter targets and methods for depositing a layer from a sputter target. The method preferably includes the steps of: placing a sputter target in a vacuum chamber; placing a substrate having a substrate surface in the vacuum chamber; reducing the pressure in the vacuum chamber to about 100 Torr or less; removing atoms from the surface of the sputter target while the sputter target is in the vacuum chamber (e.g., using a magnetic field and/or an electric field). The deposited layer preferably is a molybdenum containing alloy including about 50 atomic percent or more molybdenum, 0.5 to 45 atomic percent of a second metal element selected from the group consisting of niobium and vanadium; and 0.5 to 45 atomic percent of a third metal element selected from the group consisting of tantalum, chromium, vanadium, niobium, and titanium.
Abstract translation: 本发明涉及用于从溅射靶沉积层的溅射靶和方法。 该方法优选包括以下步骤：将溅射靶放置在真空室中; 将具有基板表面的基板放置在所述真空室中; 将真空室中的压力降低至约100托或更低; 当溅射靶位于真空室（例如，使用磁场和/或电场）时，从溅射靶的表面去除原子。 沉积层优选是包含约50原子％或更多的钼，0.5至45原子％的选自铌和钒的第二金属元素的含钼合金; 和0.5〜45原子％的选自钽，铬，钒，铌和钛的第三金属元素。
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公开(公告)号：US11753702B2
公开(公告)日：2023-09-12
申请号：US17038325
申请日：2020-09-30
Applicant: H.C. STARCK, INC.
Inventor： Gary Alan Rozak , Mark E. Gaydos , Patrick Alan Hogan , Shuwei Sun
CPC classification number: C22C1/045 , C22C27/04 , C23C14/185 , C23C14/3407 , C23C14/3414 , C23C14/5873 , G06F3/041 , B22F2998/10 , G06F2203/04103 , Y10T428/12743 , Y10T428/12826 , Y10T428/265 , Y10T428/31678 , B22F2998/10 , B22F1/09 , B22F3/115
Abstract: The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of niobium or vanadium, and a third metal element selected from the group consisting of titanium, chromium, niobium, vanadium, and tantalum, wherein the third metal element is different from the second metal element, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in the second metal element, and a phase that is rich in the third metal element.
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公开(公告)号：US11306388B2
公开(公告)日：2022-04-19
申请号：US16115648
申请日：2018-08-29
Applicant: H.C. STARCK INC.
Inventor： Shuwei Sun , Gary Alan Rozak , Qi Zhang , Barbara Cox , Yen-Te Lee
Abstract: Sputtering targets including molybdenum, niobium and tantalum are found to be useful for sputtering films for electronic devices. Sputtering targets with about 88 to 97 weight percent molybdenum show improved performance, particularly with respect to etching, such as when simultaneously etching an alloy layer including the Mo, Nb, and Ta, and a metal layer (e.g., an aluminum layer). The targets are particularly useful in manufacturing touch screen devices.
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公开(公告)号：US10829849B2
公开(公告)日：2020-11-10
申请号：US15908896
申请日：2018-03-01
Applicant: H.C. STARCK, INC.
Inventor： Gary Alan Rozak , Mark E. Gaydos , Patrick Alan Hogan , Shuwei Sun
Abstract: The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of niobium or vanadium, and a third metal element selected from the group consisting of titanium, chromium, niobium, vanadium, and tantalum, wherein the third metal element is different from the second metal element, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in the second metal element, and a phase that is rich in the third metal element.
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Patent Agency Ranking
公开(公告)号：US20180076011A1
公开(公告)日：2018-03-15
申请号：US15804365
申请日：2017-11-06
Applicant: H.C. STARCK INC.
Inventor： Gary Alan Rozak , Mark E. Gaydos , Patrick Alan Hogan , Shuwei Sun
CPC classification number: H01J37/3429 , B22F2998/10 , C03C17/40 , C22C1/045 , C22C27/04 , C23C14/0688 , C23C14/14 , C23C14/16 , C23C14/34 , C23C14/3407 , C23C14/3414 , C23C14/3492 , C23C14/35 , C23C14/548 , C23C14/5873 , C23G1/106 , C23G1/205 , G06F3/044 , G06F2203/04103 , Y10T428/12014 , Y10T428/12021 , Y10T428/12597 , Y10T428/31678 , B22F1/0003 , B22F3/02 , B22F3/18
Abstract: The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of titanium, and a third metal element of chromium or tantalum, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in titanium, and a phase that is rich in the third metal element.
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公开(公告)号：US09783882B2
公开(公告)日：2017-10-10
申请号：US14482251
申请日：2014-09-10
Applicant: H.C. Starck, Inc.
Inventor： Steven A. Miller , Prabhat Kumar , Richard Wu , Shuwei Sun , Stefan Zimmermann , Olaf Schmidt-Park
CPC classification number: C23C14/3414 , B22F1/0014 , C22C1/045 , C23C4/134 , C23C14/0057 , C23C14/0089 , C23C14/0641 , C23C14/08 , C23C14/14 , C23C24/04 , H01J37/3426 , H01J2237/332
Abstract: In various embodiments, a sputtering target initially formed by ingot metallurgy or powder metallurgy and rejuvenated by, e.g., cold spray, is utilized in sputtering processes to produce metallic thin films.
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公开(公告)号：US20150332903A1
公开(公告)日：2015-11-19
申请号：US14813732
申请日：2015-07-30
Applicant: H.C. Starck Inc.
Inventor： Gary Alan Rozak , Mark E. Gaydos , Patrick Alan Hogan , Shuwei Sun
CPC classification number: H01J37/3429 , B22F2998/10 , C03C17/40 , C22C1/045 , C22C27/04 , C23C14/0688 , C23C14/14 , C23C14/16 , C23C14/34 , C23C14/3407 , C23C14/3414 , C23C14/3492 , C23C14/35 , C23C14/548 , C23C14/5873 , C23G1/106 , C23G1/205 , G06F3/044 , G06F2203/04103 , Y10T428/12014 , Y10T428/12021 , Y10T428/12597 , Y10T428/31678 , B22F1/0003 , B22F3/02 , B22F3/18
Abstract: The invention is directed at sputter targets including 50 atomic % or more molybdenum, a second metal element of titanium, and a third metal element of chromium or tantalum, and deposited films prepared by the sputter targets. In a preferred aspect of the invention, the sputter target includes a phase that is rich in molybdenum, a phase that is rich in titanium, and a phase that is rich in the third metal element.
Abstract translation: 本发明涉及包括50原子％或更多的钼，钛的第二金属元素和铬或钽的第三金属元素以及由溅射靶制备的沉积膜的溅射靶。 在本发明的优选方面，溅射靶包括富含钼的相，富含钛的相和富含第三金属元素的相。
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19.发明申请FINE GRAINED, NON BANDED, REFRACTORY METAL SPUTTERING TARGETS WITH A UNIFORMLY RANDOM CRYSTALLOGRAPHIC ORIENTATION, METHOD FOR MAKING SUCH FILM, AND THIN FILM BASED DEVICES AND PRODUCTS MADE THEREFROM 有权精细粒度，非带状，具有均匀的随机晶体取向的耐火金属溅射靶，制造这种膜的方法以及薄膜的器件及其制造的产品公开(公告)号：US20150034477A1
公开(公告)日：2015-02-05
申请号：US14482251
申请日：2014-09-10
Applicant: H.C. Starck, Inc.
Inventor： Steven A. Miller , Prabhat Kumar , Richard Wu , Shuwei Sun , Stefan Zimmermann , Olaf Schmidt-Park
CPC classification number: C23C14/3414 , B22F1/0014 , C22C1/045 , C23C4/134 , C23C14/0057 , C23C14/0089 , C23C14/0641 , C23C14/08 , C23C14/14 , C23C24/04 , H01J37/3426 , H01J2237/332
Abstract: In various embodiments, a sputtering target initially formed by ingot metallurgy or powder metallurgy and rejuvenated by, e.g., cold spray, is utilized in sputtering processes to produce metallic thin films.
Abstract translation: 在各种实施例中，最初通过铸锭冶金或粉末冶金形成并通过例如冷喷涂再生的溅射靶用于溅射工艺以产生金属薄膜。
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公开(公告)号：US08883250B2
公开(公告)日：2014-11-11
申请号：US13920534
申请日：2013-06-18
Applicant: H.C. Starck Inc.
Inventor： Steven A. Miller , Prabhat Kumar , Rong-chein Richard Wu , Shuwei Sun , Stefan Zimmermann , Olaf Schmidt-Park
CPC classification number: C23C14/3414 , B22F1/0014 , C22C1/045 , C23C4/134 , C23C14/0057 , C23C14/0089 , C23C14/0641 , C23C14/08 , C23C14/14 , C23C24/04 , H01J37/3426 , H01J2237/332
Abstract: In various embodiments, a sputtering target initially formed by ingot metallurgy or powder metallurgy and comprising a sputtering-target material is provided, the sputtering-target material (i) comprising a metal, (ii) defining a recessed furrow therein, and (iii) having a first grain size and a first crystalline microstructure. A powder is spray-deposited within the furrow to form a layer therein, the layer (i) comprising the metal, (ii) having a second grain size finer than the first grain size, and (iii) having a second crystalline microstructure more random than the first crystalline microstructure. Spray-depositing the powder within the furrow forms a distinct boundary line between the layer and the sputtering-target material.
Abstract translation: 在各种实施例中，提供了最初通过铸锭冶金或粉末冶金形成并且包括溅射靶材料的溅射靶，溅射靶材料（i）包括金属，（ii）在其中限定凹槽，以及（iii） 具有第一晶粒尺寸和第一晶体微结构。 将粉末喷涂在沟槽内以在其中形成层，层（i）包含金属，（ii）具有比第一粒度更细的第二粒度，和（iii）具有更随机的第二结晶微结构 比第一个结晶微结构。 将粉末喷射沉积在沟槽内，在层和溅射靶材料之间形成明显的边界线。
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