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公开(公告)号：US09991669B2
公开(公告)日：2018-06-05
申请号：US15656096
申请日：2017-07-21
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Kazuyoshi Hirose , Yoshitaka Kurosaka , Takahiro Sugiyama , Yuu Takiguchi , Yoshiro Nomoto
CPC classification number: H01S5/0085 , H01S5/0265 , H01S5/183 , H01S5/18338 , H01S5/18363 , H01S5/18386 , H01S5/18391 , H01S5/18394 , H01S5/187
Abstract: The embodiment relates to a semiconductor light-emitting device comprising a semiconductor substrate, a first cladding layer, an active layer, a second cladding layer, a contact layer, and a phase modulation layer located between the first cladding and active layers or between the active and second cladding layers. The phase modulation layer comprises a basic layer and plural first modified refractive index regions different from the basic layer in a refractive index. In a virtual square lattice set on the phase modulation layer such that the modified refractive index region is allocated in each of unit constituent regions constituting square lattices, the modified refractive index region is arranged to allow its gravity center position to be separated from the lattice point of the corresponding unit constituent region, and to have a rotation angle about the lattice point according a desired optical image.
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公开(公告)号：US09583914B2
公开(公告)日：2017-02-28
申请号：US14771911
申请日：2014-02-27
Applicant: Kyoto University , HAMAMATSU PHOTONICS K.K.
Inventor： Kazuyoshi Hirose , Akiyoshi Watanabe , Yoshitaka Kurosaka , Takahiro Sugiyama , Susumu Noda
CPC classification number: H01S5/18 , H01S3/08009 , H01S5/0425 , H01S5/105 , H01S5/12 , H01S5/1231 , H01S5/183 , H01S5/18319 , H01S5/187 , H01S2301/14
Abstract: A semiconductor laser element is realized with high beam quality (index M2
Abstract translation: 半导体激光元件实现了高光束质量（指标M2 <1）。 衍射光栅层6的衍射光栅6ba沿主表面2a延伸并设置在衍射光栅层6的p侧表面6a上; 衍射光栅层6的折射率在衍射光栅6ba中沿主表面2a延伸的方向周期性地变化; 衍射光栅6ba具有多个孔6b; 多个孔6b设置在p侧表面6a中并且沿着正方形格子R3平移对称地布置; 多个孔6b各自具有相同的尺寸和形状; 每个孔6b对应于衍射光栅6ba的晶格点，并且具有三棱柱形状; 孔6b的底面6c的形状为近似的直角三角形。
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公开(公告)号：US11990730B2
公开(公告)日：2024-05-21
申请号：US16973602
申请日：2019-06-19
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Yuta Aoki , Kazuyoshi Hirose , Satoru Okawara
CPC classification number: H01S5/11 , H01S5/18305 , H01S5/185 , H01S5/34333
Abstract: A light-emitting device according to an embodiment includes a structure for increasing an optical confinement coefficient of a layer forming a resonance mode. The light-emitting device includes a first cladding layer, an active layer, a second cladding layer, a resonance mode formation layer, and a high refractive index layer. The first cladding layer, the active layer, the second cladding layer, the resonance mode formation layer, and the high refractive index layer mainly contain nitride semiconductors. The high refractive index layer has a refractive index higher than that of any of the first cladding layer, the active layer, the second cladding layer, and the resonance mode formation layer, and has a superlattice structure in which two or more layers having refractive indices different from each other are repeatedly laminated.
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公开(公告)号：US11031747B2
公开(公告)日：2021-06-08
申请号：US16323625
申请日：2017-08-10
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Yoshitaka Kurosaka , Kazuyoshi Hirose , Takahiro Sugiyama , Yuu Takiguchi , Yoshiro Nomoto
Abstract: The present embodiment relates to a light emitting device having a structure capable of removing zero order light from output light of an S-iPM laser. The light emitting device includes a semiconductor light emitting element and a light shielding member. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a basic layer and a plurality of modified refractive index regions, each of which is individually disposed at a specific position. The light shielding member has a function of passing through a specific optical image output along an inclined direction and shielding zero order light output along a normal direction of a light emitting surface.
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公开(公告)号：US20190356113A1
公开(公告)日：2019-11-21
申请号：US16451580
申请日：2019-06-25
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Yoshitaka KUROSAKA , Yuu Takiguchi , Takahiro Sugiyama , Kazuyoshi Hirose , Yoshiro Nomoto
Abstract: In a semiconductor light emitting element provided with an active layer 4, a pair of cladding layers 2, 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4, the phase modulation layer 6 includes a base layer 6A and a plurality of different refractive index regions 6B having different refractive indices from the base layer 6A. When an XYZ orthogonal coordinate system having a thickness direction of the phase modulation layer 6 as a Z-axis direction is set and a square lattice of a virtual lattice constant a is set in an XY plane, each of the different refractive index regions 6B is disposed so that a centroid position G thereof is shifted from a lattice point position in a virtual square lattice by a distance r, and the distance r is 0
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Patent Agency Ranking
公开(公告)号：US10090636B2
公开(公告)日：2018-10-02
申请号：US15541515
申请日：2016-01-07
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Yuu Takiguchi , Kazuyoshi Hirose , Yoshiro Nomoto , Takahiro Sugiyama , Yoshitaka Kurosaka
IPC: H01S5/02 , G02F1/1335 , G02B27/10 , H01S5/18
Abstract: Provided is a semiconductor laser device including a plurality of semiconductor laser units LDC that are capable of being independently driven, and a spatial light modulator SLM that is optically coupled to a group of the plurality of semiconductor laser units LDC. Each of the semiconductor laser units includes a pair of clad layers having an active layer 4 interposed therebetween, and a diffractive lattice layer 6 that is optically coupled to the active layer 4. The semiconductor laser device includes a ¼ wavelength plate 26 that is disposed between a group of the active layers 4 of the plurality of semiconductor laser units LDC and a reflection film 23, and a polarizing plate 27 that is disposed between the group of the active layers 4 of the plurality of semiconductor laser units LDC and a light emitting surface.
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公开(公告)号：US09948060B2
公开(公告)日：2018-04-17
申请号：US15538219
申请日：2015-12-24
Applicant: HAMAMATSU PHOTONICS K.K.
Inventor： Yuu Takiguchi , Kazuyoshi Hirose , Yoshitaka Kurosaka , Takahiro Sugiyama , Yoshiro Nomoto
CPC classification number: H01S5/0425 , G02F1/13 , H01S3/1065 , H01S5/0228 , H01S5/026 , H01S5/0624 , H01S5/06243 , H01S5/105 , H01S5/12 , H01S5/14 , H01S5/18 , H01S5/18302 , H01S5/18361 , H01S5/34313 , H01S5/34353 , H01S2301/02 , H01S2301/20
Abstract: This semiconductor laser device includes a semiconductor laser chip and a spatial light modulator SLM optically coupled to the semiconductor laser chip. The semiconductor laser chip LDC includes an active layer 4, a pair of cladding layers 2 and 7 sandwiching the active layer 4, a diffraction grating layer 6 optically coupled to the active layer 4, and a drive electrode E3 that is disposed between the cladding layer 2 and the spatial light modulator SLM and supplies an electric current to the active layer 4, and the drive electrode E3 is positioned within an XY plane and has a plurality of openings as viewed from a Z-axis direction and has a non-periodic structure.
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公开(公告)号：US09698562B2
公开(公告)日：2017-07-04
申请号：US14772459
申请日：2014-03-07
Applicant: Kyoto University , HAMAMATSU PHOTONICS K.K.
Inventor： Akiyoshi Watanabe , Kazuyoshi Hirose , Yoshitaka Kurosaka , Takahiro Sugiyama , Susumu Noda
IPC: G02F1/35 , H01S5/00 , H01S5/18 , H01S5/022 , H01S5/10 , G02F1/37 , G02F1/355 , H01S5/024 , H01S5/187
CPC classification number: H01S5/0092 , G02F1/3544 , G02F1/3551 , G02F1/3558 , G02F1/37 , G02F2001/3548 , H01S5/02248 , H01S5/02446 , H01S5/105 , H01S5/18 , H01S5/187
Abstract: In a laser device, a different refractive index region 6B of a photonic crystal layer is arranged at a lattice point position of a square lattice. In the case where a plane shape of the different refractive index regions 6B is a nearly isosceles right triangle, two sides forming a right angle extend along longitudinal and horizontal lateral lines of the square lattice. A direction parallel to or vertical to an oblique side of the triangle and a direction of polarization in the periodic polarization inversion structure of a nonlinear optical crystal NL are the same.
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公开(公告)号：US09667028B2
公开(公告)日：2017-05-30
申请号：US14772459
申请日：2014-03-07
Applicant: Kyoto University , HAMAMATSU PHOTONICS K.K.
Inventor： Akiyoshi Watanabe , Kazuyoshi Hirose , Yoshitaka Kurosaka , Takahiro Sugiyama , Susumu Noda
IPC: G02F1/35 , H01S5/00 , H01S5/18 , H01S5/022 , H01S5/10 , G02F1/37 , G02F1/355 , H01S5/024 , H01S5/187
Abstract: In a laser device, a different refractive index region 6B of a photonic crystal layer is arranged at a lattice point position of a square lattice. In the case where a plane shape of the different refractive index regions 6B is a nearly isosceles right triangle, two sides forming a right angle extend along longitudinal and horizontal lateral lines of the square lattice. A direction parallel to or vertical to an oblique side of the triangle and a direction of polarization in the periodic polarization inversion structure of a nonlinear optical crystal NL are the same.
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公开(公告)号：US20140348193A1
公开(公告)日：2014-11-27
申请号：US14362435
申请日：2012-12-05
Applicant: Kyoto University , HAMAMATSU PHOTONICS K.K.
Inventor： Susumu Noda , Yoshitaka Kurosaka , Akiyoshi Watanabe , Kazuyoshi Hirose , Takahiro Sugiyama
CPC classification number: H01S5/105 , H01S5/0425 , H01S5/06243 , H01S5/1085 , H01S5/1218 , H01S5/323 , H01S5/34313 , H01S5/4056
Abstract: According to a finite difference between inverse numbers of arrangement periods (a1 and a2) in first and second periodic structures, when seen in a thickness direction of a semiconductor laser element, at least two laser beams that form a predetermined angle (δθ) with respect to a lengthwise direction of a first driving electrode (E2) are generated in the semiconductor laser element, one of the laser beams is set to be totally reflected in a light emission end surface, and a refractive angle (θ3) of the other laser beam is set to be less than 90 degrees.
Abstract translation: 根据第一和第二周期结构中的排列周期（a1和a2）的倒数之间的有限差，当在半导体激光元件的厚度方向上看时，至少两个激光束形成预定角度（δ' 在半导体激光元件中产生相对于第一驱动电极（E2）的长度方向的一个激光束，其中一个激光束被设定为在发光端面中被全反射，并且将折射角（＆ 其他激光束设定为小于90度。
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