公开(公告)号：US10600619B2

公开(公告)日：2020-03-24

申请号：US15091730

申请日：2016-04-06

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yoshiharu Inoue ,  Tetsuo Ono ,  Michikazu Morimoto ,  Masaki Fujii ,  Masakazu Miyaji

IPC: H01J37/32 ,  H01L21/3213 ,  H01L21/3065 ,  H01L21/66 ,  H01L21/67

Abstract: A plasma processing method in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.

公开(公告)号：US10037909B2

公开(公告)日：2018-07-31

申请号：US14626911

申请日：2015-02-19

Applicant: Hitachi High-Technologies Corporation

Inventor： Tooru Aramaki ,  Michikazu Morimoto ,  Kenetsu Yokogawa

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/683 ,  H01T23/00 ,  H01J37/32

CPC classification number: H01L21/6833 ,  H01J37/32174 ,  H01J37/32577 ,  H01J37/32715

Abstract: In a plasma processing apparatus, a connector section with the film-like electrode of a sintered plate of a sample stage to which high-frequency power is supplied includes a conductor section disposed inside a through hole, an upper part of which is bonded to the film-like electrode and a lower part of which is connected to an end of a power supply path of the high-frequency power, and a boss disposed between the conductor section and a substrate surrounding an outer periphery of the conductor section inside the through hole and made of an insulating material. Upper ends of a rod-like member at the center of the conductor section and a socket surrounding the rod-like member are disposed at a position higher than the boss, and an adhesive is prevented from entering between the socket and the rod-like member in the upper end of the socket.

公开(公告)号：US08889024B2

公开(公告)日：2014-11-18

申请号：US14248844

申请日：2014-04-09

Applicant: Hitachi High-Technologies Corporation

Inventor： Tomoyuki Watanabe ,  Michikazu Morimoto ,  Mamoru Yakushiji ,  Tetsuo Ono

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32192 ,  H01J2237/334 ,  H01L21/31116 ,  H01L21/32132

Abstract: A plasma etching method that can improve an etching selection ratio of a film to be etched to a film different from the film to be etched compared with the related art is provided. The present invention provides a plasma etching method for selectively etching a film to be etched against a film different from the film to be etched, in which plasma etching of the film to be etched is performed using a gas that can cause to generate a deposited film containing similar components as components of the different film.

公开(公告)号：US11658011B2

公开(公告)日：2023-05-23

申请号：US16749180

申请日：2020-01-22

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yoshiharu Inoue ,  Tetsuo Ono ,  Michikazu Morimoto ,  Masaki Fujii ,  Masakazu Miyaji

IPC: H01J37/32 ,  H01L21/3213 ,  H01L21/3065 ,  H01L21/66 ,  H01L21/67

CPC classification number: H01J37/32266 ,  H01J37/3266 ,  H01J37/32192 ,  H01J37/32935 ,  H01L21/3065 ,  H01L21/32137 ,  H01L21/67069 ,  H01L22/26 ,  H01J2237/2485 ,  H01J2237/334

Abstract: A plasma processing method in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.

公开(公告)号：US10192718B2

公开(公告)日：2019-01-29

申请号：US15132701

申请日：2016-04-19

Applicant: Hitachi High-Technologies Corporation

Inventor： Michikazu Morimoto ,  Naoki Yasui ,  Yasuo Ohgoshi

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67

Abstract: In a plasma processing apparatus including a first radio-frequency power supply which supplies first radio-frequency power for generating plasma in a vacuum chamber, a second radio-frequency power supply which supplies second radio-frequency power to a sample stage on which a sample is mounted, and a matching box for the second radio-frequency power supply, the matching box samples information for performing matching during a sampling effective period which is from a point of time after elapse of a prescribed time from a beginning of on-state of the time-modulated second radio-frequency power until an and of the on-state and maintains a matching state attained during the sampling effective period from after the end of the on-state until a next sampling effective period.

公开(公告)号：US20170025289A1

公开(公告)日：2017-01-26

申请号：US15284668

申请日：2016-10-04

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Michikazu Morimoto ,  Yasuo Ohgoshi ,  Yuuzou Oohirabaru ,  Tetsuo Ono

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01L21/67069 ,  H01J37/32082 ,  H01J37/32165 ,  H01J37/32192 ,  H01J37/32302 ,  H01J37/32706 ,  H01J37/32715 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32137

Abstract: The present invention provides a plasma processing apparatus having a radio frequency power supply supplying time-modulated radio frequency power which is controllable widely with high precision, and a plasma processing method using the plasma processing apparatus. The plasma processing apparatus includes: a vacuum chamber; a first radio frequency power supply for generating plasma in the vacuum chamber; a sample holder disposed in the vacuum chamber, on which a sample is placed; and a second radio frequency power supply supplying radio frequency power to the sample holder, wherein at least one of the first radio frequency power supply and the second radio frequency power supply supplies time-modulated radio frequency power, one of parameters of controlling the time-modulation has two or more different control ranges, and one of the control ranges is a control range for a high-precision control.

Abstract translation: 本发明提供了一种等离子体处理装置，其具有提供可以高精度地广泛控制的调频射频功率的射频电源和使用等离子体处理装置的等离子体处理方法。 等离子体处理装置包括：真空室; 用于在真空室中产生等离子体的第一射频电源; 设置在真空室中的样品保持器，其上放置样品; 以及第二射频电源，向所述检体保持器供给射频电力，其中，所述第一射频电源和所述第二射频电源中的至少一个提供时间调制的射频电力， 调制具有两个或多个不同的控制范围，并且控制范围之一是用于高精度控制的控制范围。

公开(公告)号：US09502217B2

公开(公告)日：2016-11-22

申请号：US14609807

申请日：2015-01-30

Applicant: Hitachi High-Technologies Corporation

Inventor： Shunsuke Kanazawa ,  Naoki Yasui ,  Michikazu Morimoto ,  Yasuo Ohgoshi

IPC: C23F1/00 ,  H01J37/32 ,  H01L21/3213 ,  C23F4/00

CPC classification number: H01J37/32311 ,  C23F4/00 ,  H01J37/32146 ,  H01J37/32155 ,  H01J37/32165 ,  H01J37/32302 ,  H01L21/32137

Abstract: A plasma processing apparatus includes a processing chamber which plasma-processes a sample, a first high-frequency power supply which supplies first high-frequency power for plasma generation to the processing chamber, a second high-frequency power supply which supplies second high-frequency power to a sample stage on which the sample is placed and a pulse generation device which generate first pulses for time-modulating the first high-frequency power and second pulses for time-modulating the second high-frequency power. The pulse generation device includes a control device which controls the first and second pulses so that frequency of the first pulses is higher than frequency of the second pulses and the on-period of the second pulse is contained in the on-period of the first pulse.

公开(公告)号：US09349603B2

公开(公告)日：2016-05-24

申请号：US14452578

申请日：2014-08-06

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Yoshiharu Inoue ,  Tetsuo Ono ,  Michikazu Morimoto ,  Masaki Fujii ,  Masakazu Miyaji

IPC: H01L21/302 ,  H01L21/3065 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/66

CPC classification number: H01J37/32266 ,  H01J37/32192 ,  H01J37/3266 ,  H01J37/32935 ,  H01J2237/2485 ,  H01J2237/334 ,  H01L21/3065 ,  H01L21/32137 ,  H01L21/67069 ,  H01L22/26

Abstract: A plasma processing method in which a stable process region can be ensured in a wide range, from low microwave power to high microwave power. The plasma processing method includes making production of plasma easy in a region in which production of plasma by continuous discharge is difficult, and plasma-processing an object to be processed, with the generated plasma, wherein the plasma is produced by pulsed discharge in which ON and OFF are repeated, radio-frequency power for producing the pulsed discharge, during an ON period, is a power to facilitate production of plasma by continuous discharge, and a duty ratio of the pulsed discharge is controlled so that an average power of the radio-frequency power per cycle is power in the region in which production of plasma by continuous discharge is difficult.

Abstract translation: 一种等离子体处理方法，其中可以从低微波功率到高微波功率的宽范围内确保稳定的工艺区域。 等离子体处理方法包括通过连续放电难以制造等离子体的区域以及通过所产生的等离子体等离子体处理被处理物的区域容易地制造等离子体，其中通过脉冲放电产生等离子体，其中ON 和OFF），在ON期间产生脉冲放电的射频功率是通过连续放电促进等离子体生产的功率，并且控制脉冲放电的占空比使得无线电的平均功率 每个循环的频率功率是在难以通过连续放电产生等离子体的区域中的功率。

公开(公告)号：US11004658B2

公开(公告)日：2021-05-11

申请号：US16050089

申请日：2018-07-31

Applicant: Hitachi High-Technologies Corporation

Inventor： Michikazu Morimoto ,  Naoki Yasui ,  Yasuo Ohgoshi

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/67

Abstract: In a plasma processing apparatus including a first radio-frequency power supply which supplies first radio-frequency power for generating plasma in a vacuum chamber, a second radio-frequency power supply which supplies second radio-frequency power to a sample stage on which a sample is mounted, and a matching box for the second radio-frequency power supply, the matching box samples information for performing matching during a sampling effective period which is from a point of time after elapse of a prescribed time from a beginning of on-state of the time-modulated second radio-frequency power until an end of the on-state and maintains a matching state attained during the sampling effective period from after the end of the on-state until a next sampling effective period.

公开(公告)号：US10559481B2

公开(公告)日：2020-02-11

申请号：US15056142

申请日：2016-02-29

Applicant: HITACHI HIGH-TECHNOLOGIES CORPORATION

Inventor： Michikazu Morimoto ,  Yasuo Ohgoshi ,  Yuuzou Oohirabaru ,  Tetsuo Ono

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/66 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/762

Abstract: Provided are a plasma processing apparatus with a radio-frequency power supply supplying temporally modulated intermittent radio-frequency power which can be controlled with high precision in a wide repetition frequency band, and a plasma processing method using the plasma processing apparatus.A plasma processing apparatus includes: a vacuum vessel; a plasma generating section plasma in the vacuum vessel; a stage installed in the vacuum vessel and mounted with a sample; and a radio-frequency power supply applying temporally modulated intermittent radio-frequency power to the stage, wherein the radio-frequency power supply has two or more different frequency bands and temporally modulates the radio-frequency power by a repetition frequency which has the same range of analog signals used in each of the frequency band.