公开(公告)号：US20100084650A1

公开(公告)日：2010-04-08

申请号：US12568120

申请日：2009-09-28

申请人： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Atsushi UMEZAKI

发明人： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Atsushi UMEZAKI

IPC分类号： H01L29/786

CPC分类号： H01L27/1225 ,  H01L27/124 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/78606 ,  H01L29/7869

摘要： A pixel portion and a driver circuit driving the pixel portion are formed over the same substrate. At least a part of the driver circuit is formed using an inverted staggered thin film transistor in which an oxide semiconductor layer is used and a channel protective layer is provided over the oxide semiconductor layer serving as a channel formation region which is overlapped with the gate electrode. The driver circuit as well as the pixel portion is provided over the same substrate to reduce manufacturing costs.

摘要翻译： 驱动像素部的像素部和驱动电路形成在同一基板上。 使用其中使用氧化物半导体层的反交错薄膜晶体管形成驱动电路的至少一部分，并且在用作与栅电极重叠的沟道形成区域的氧化物半导体层上设置沟道保护层 。 驱动电路以及像素部分设置在相同的基板上以降低制造成本。

公开(公告)号：US20100084651A1

公开(公告)日：2010-04-08

申请号：US12570481

申请日：2009-09-30

申请人： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Atsushi UMEZAKI

发明人： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Atsushi UMEZAKI

IPC分类号： H01L33/00

CPC分类号： H01L27/1225 ,  G02F1/13624 ,  H01L27/124 ,  H01L27/3276 ,  H01L29/7869

摘要： With an increase in the definition of a display device, the number of pixels is increased, and thus the numbers of gate lines and signal lines are increased. Due to the increase in the numbers of gate lines and signal lines, it is difficult to mount an IC chip having a driver circuit for driving the gate and signal lines by bonding or the like, which causes an increase in manufacturing costs. A pixel portion and a driver circuit for driving the pixel portion are formed over one substrate. At least a part of the driver circuit is formed using an inverted staggered thin film transistor in which an oxide semiconductor is used. The driver circuit as well as the pixel portion is provided over the same substrate, whereby manufacturing costs are reduced.

摘要翻译： 随着显示装置的定义的增加，像素的数量增加，因此栅极线和信号线的数量增加。 由于栅极线和信号线的数量增加，难以安装具有用于通过接合等驱动栅极和信号线的驱动电路的IC芯片，这导致制造成本的增加。 用于驱动像素部分的像素部分和驱动电路形成在一个衬底上。 使用其中使用氧化物半导体的反交错薄膜晶体管形成驱动电路的至少一部分。 驱动电路以及像素部分设置在相同的基板上，由此降低了制造成本。

公开(公告)号：US20100252826A1

公开(公告)日：2010-10-07

申请号：US12570498

申请日：2009-09-30

申请人： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Atsushi UMEZAKI

发明人： Shunpei YAMAZAKI ,  Kengo AKIMOTO ,  Atsushi UMEZAKI

IPC分类号： H01L29/786 ,  H01L21/44

CPC分类号： H01L27/124 ,  G09G3/3233 ,  G09G2310/0286 ,  G09G2310/0297 ,  H01L21/02565 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1259 ,  H01L29/12 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/518

摘要： With an increase in the definition of a display device, the number of pixels is increased, and thus the numbers of gate lines and signal lines are increased. The increase in the numbers of gate lines and signal lines makes it difficult to mount an IC chip having a driver circuit for driving the gate line and the signal line by bonding or the like, which causes an increase in manufacturing costs. A pixel portion and a driver circuit driving the pixel portion are provided over the same substrate. The pixel portion and at least a part of the driver circuit are formed using thin film transistors in each of which an oxide semiconductor is used. Both the pixel portion and the driver circuit are provided over the same substrate, whereby manufacturing costs are reduced.

摘要翻译： 随着显示装置的定义的增加，像素的数量增加，因此栅极线和信号线的数量增加。 栅极线和信号线的数量的增加使得难以安装具有用于通过接合等驱动栅极线和信号线的驱动电路的IC芯片，这导致制造成本的增加。 驱动像素部的像素部和驱动电路设置在同一基板上。 像素部分和驱动电路的至少一部分使用薄膜晶体管形成，其中每个使用氧化物半导体。 像素部分和驱动电路均设置在相同的基板上，由此降低了制造成本。

公开(公告)号：US20110068334A1

公开(公告)日：2011-03-24

申请号：US12887606

申请日：2010-09-22

申请人： Shunpei YAMAZAKI ,  Hideaki SHISHIDO

发明人： Shunpei YAMAZAKI ,  Hideaki SHISHIDO

IPC分类号： H01L33/28

CPC分类号： H01L27/14603 ,  B82Y30/00 ,  G02F1/133707 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/1345 ,  G02F1/136204 ,  G02F1/13624 ,  G02F2001/133388 ,  G02F2001/133622 ,  G02F2001/13606 ,  G02F2001/136231 ,  G02F2001/136236 ,  G02F2001/13629 ,  G02F2001/136295 ,  G02F2202/16 ,  G02F2202/36 ,  H01L27/1225 ,  H01L29/78636 ,  H01L29/7869

摘要： Disclosed is a semiconductor device which consumes low power and has high reliability and tolerance for electrostatic discharge. The semiconductor device includes, over a first substrate, a pixel portion and a driver circuit portion both of which have a thin film transistor having an oxide semiconductor layer. The semiconductor device further possesses a second substrate to which a first counter electrode layer and a second counter electrode layer are provided, and a liquid crystal layer is interposed between the first and second substrates. The first and second counter electrode layers are provided over the pixel portion and the driver circuit portion, respectively, and the second counter electrode layer has the same potential as the first counter electrode layer.

摘要翻译： 公开了一种消耗低功率并具有高静电放电可靠性和耐受性的半导体器件。 半导体器件包括在第一衬底上的像素部分和驱动器电路部分，它们都具有具有氧化物半导体层的薄膜晶体管。 半导体器件还具有设置第一对置电极层和第二对电极层的第二基板，并且在第一和第二基板之间插入液晶层。 第一和第二对电极层分别设置在像素部分和驱动电路部分上，第二对电极层具有与第一对电极层相同的电位。

公开(公告)号：US20100244029A1

公开(公告)日：2010-09-30

申请号：US12730288

申请日：2010-03-24

申请人： Shunpei YAMAZAKI ,  Takayuki ABE ,  Hideaki SHISHIDO

发明人： Shunpei YAMAZAKI ,  Takayuki ABE ,  Hideaki SHISHIDO

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/3248 ,  H01L29/42376 ,  H01L29/42384 ,  H01L29/78606 ,  H01L29/78645 ,  H01L29/78648

摘要： The threshold voltage is shifted in a negative or positive direction in some cases by an unspecified factor in a manufacturing process of the thin film transistor. If the amount of shift from 0 V is large, driving voltage is increased, which results in an increase in power consumption of a semiconductor device. Thus, a resin layer having good flatness is formed as a first protective insulating film covering the oxide semiconductor layer, and then a second protective insulating film is formed by a sputtering method or a plasma CVD method under a low power condition over the resin layer. Further, in order to adjust the threshold voltage to a desired value, gate electrodes are provided over and below an oxide semiconductor layer.

摘要翻译： 在薄膜晶体管的制造过程中，阈值电压在负方向或正方向上偏移一些未指定因子。 如果从0V的偏移量大，则驱动电压增加，这导致半导体器件的功耗的增加。 因此，形成具有良好平坦度的树脂层作为覆盖氧化物半导体层的第一保护绝缘膜，然后通过溅射法或等离子体CVD法在低功率条件下在树脂层上形成第二保护绝缘膜。 此外，为了将阈值电压调整为期望值，在氧化物半导体层的上方和下方设置栅电极。

公开(公告)号：US20110090416A1

公开(公告)日：2011-04-21

申请号：US12906178

申请日：2010-10-18

申请人： Ryo ARASAWA ,  Hideaki SHISHIDO ,  Shunpei YAMAZAKI

发明人： Ryo ARASAWA ,  Hideaki SHISHIDO ,  Shunpei YAMAZAKI

IPC分类号： G02F1/133

CPC分类号： H01L29/78609 ,  G02F1/133345 ,  G02F1/134336 ,  G02F1/13439 ,  G02F1/136213 ,  G02F1/13624 ,  G02F1/136286 ,  G02F1/1368 ,  G02F2001/134345 ,  G02F2201/123 ,  G02F2201/40 ,  G09G3/3614 ,  G09G3/3648 ,  G09G3/3677 ,  G09G2300/0426 ,  G09G2300/0439 ,  G09G2300/0465 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/127 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/7869 ,  H01L29/78696

摘要： A liquid crystal display device is provided in which the aperture ratio can be increased in a pixel including a thin film transistor in which an oxide semiconductor is used. In the liquid crystal display device, the thin film transistor including a gate electrode, a gate insulating layer and an oxide semiconductor layer which are provided so as to overlap with the gate electrode, and a source electrode and a drain electrode which overlap part of the oxide semiconductor layer is provided between a signal line and a pixel electrode which are provided in a pixel portion. The off-current of the thin film transistor is 1×10−13 A or less. A potential can be held only by a liquid crystal capacitor, without a capacitor which is parallel to a liquid crystal element, and a capacitor connected to the pixel electrode is not formed in the pixel portion.

摘要翻译： 提供了一种液晶显示装置，其中可以在包括使用氧化物半导体的薄膜晶体管的像素中增加开口率。 在液晶显示装置中，包括与栅电极重叠设置的栅电极，栅极绝缘层和氧化物半导体层的薄膜晶体管，以及与栅电极重叠的源电极和漏电极 氧化物半导体层设置在设置在像素部中的信号线和像素电极之间。 薄膜晶体管的截止电流为1×10-13A以下。 电位只能由液晶电容器保持，而没有与液晶元件平行的电容器，并且在像素部分中不形成连接到像素电极的电容器。

公开(公告)号：US20110186949A1

公开(公告)日：2011-08-04

申请号：US13084996

申请日：2011-04-12

申请人： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Kiyoshi KATO ,  Takaaki KOEN ,  Yuto YAKUBO ,  Makoto YANAGISAWA ,  Hisashi OHTANI ,  Eiji SUGIYAMA ,  Nozomi HORIKOSHI

发明人： Shunpei YAMAZAKI ,  Jun KOYAMA ,  Kiyoshi KATO ,  Takaaki KOEN ,  Yuto YAKUBO ,  Makoto YANAGISAWA ,  Hisashi OHTANI ,  Eiji SUGIYAMA ,  Nozomi HORIKOSHI

IPC分类号： H01L29/66

CPC分类号： G06K19/07735 ,  G06K19/07722 ,  G06K19/07794 ,  H01L23/295 ,  H01L23/3157 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2924/12044 ,  H01L2924/19041 ,  H01L2924/3011 ,  H01L2924/3025 ,  H01L2924/00

摘要： A semiconductor device capable of wireless communication, which has high reliability in terms of resistance to external force, in particular, pressing force and can prevent electrostatic discharge in an integrated circuit without preventing reception of an electric wave. The semiconductor device includes an on-chip antenna connected to the integrated circuit and a booster antenna which transmits a signal or power included in a received electric wave to the on-chip antenna without contact. In the semiconductor device, the integrated circuit and the on-chip antenna are interposed between a pair of structure bodies formed by impregnating a fiber body with a resin. One of the structure bodies is provided between the on-chip antenna and the booster antenna. A conductive film having a surface resistance value of approximately 106 to 1014 Ω/cm2 is formed on at least one surface of each structure body.

摘要翻译： 一种能够进行无线通信的半导体装置，其在外力方面具有高的可靠性，特别是按压力，并且能够防止集成电路中的静电放电，而不会妨碍电波的接收。 半导体器件包括连接到集成电路的片上天线和将接收到的电波中包含的信号或功率发送到片上天线而不接触的增强天线。 在半导体器件中，集成电路和片上天线插入通过用树脂浸渍纤维体而形成的一对结构体之间。 其中一个结构体设置在片上天线和增强天线之间。 在每个结构体的至少一个表面上形成表面电阻值为大约106至1014Ω·cm 2 / cm 2的导电膜。

公开(公告)号：US20120276960A1

公开(公告)日：2012-11-01

申请号：US13540664

申请日：2012-07-03

申请人： Yasunori YOSHIDA ,  Hajima KIMURA ,  Shinji MAEKAWA ,  Osamu NAKAMURA ,  Shunpei YAMAZAKI

发明人： Yasunori YOSHIDA ,  Hajima KIMURA ,  Shinji MAEKAWA ,  Osamu NAKAMURA ,  Shunpei YAMAZAKI

IPC分类号： G09G3/30 ,  H04W88/02

CPC分类号： H01L27/156 ,  H01L21/288 ,  H01L21/76838 ,  H01L27/1285 ,  H01L27/1292 ,  H01L27/3248 ,  H01L27/3276

摘要： The invention provides an active matrix EL display device which can perform a clear multi-gray scale color display. In particular, the invention provides a large active matrix EL display device at low cost by a manufacturing method which can selectively form a pattern. Power supply lines in a pixel portion are arranged in matrix by the manufacturing method which can selectively form a pattern. Further, capacitance between wirings is reduced by providing a longer distance between adjacent wirings by the manufacturing method which can selectively form a pattern.

摘要翻译： 本发明提供一种能够执行清晰的多灰阶彩色显示的有源矩阵EL显示装置。 特别地，本发明通过可以选择性地形成图案的制造方法以低成本提供大的有源矩阵EL显示装置。 通过可以选择性地形成图案的制造方法将像素部分中的电源线布置成矩阵。 此外，通过可以选择性地形成图案的制造方法，通过在相邻布线之间提供更长的距离来减小布线之间的电容。

公开(公告)号：US20120274879A1

公开(公告)日：2012-11-01

申请号：US13542693

申请日：2012-07-06

申请人： Yasuhiro JINBO ,  Masafumi MORISUE ,  Hajime KIMURA ,  Shunpei YAMAZAKI

发明人： Yasuhiro JINBO ,  Masafumi MORISUE ,  Hajime KIMURA ,  Shunpei YAMAZAKI

IPC分类号： G02F1/13357 ,  G09F13/04

CPC分类号： H01L27/1266 ,  G02F1/133305 ,  G02F1/133603 ,  H01L21/6835 ,  H01L27/1214 ,  H01L27/153 ,  H01L33/0079 ,  H01L33/62 ,  H01L51/003 ,  H01L2221/68318 ,  H01L2221/68386

摘要： The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate.

摘要翻译： 本发明提供一种使用剥离工艺的半导体器件和显示装置的制造技术，其中可以以保持剥离之前元件的形状和特性的良好状态进行转印处理。 此外，本发明提供了一种更高可靠性的高可靠性的半导体器件和显示器件的制造技术，而不会使器件和制造过程复杂化。 根据本发明，在具有透光性的第一基板上形成包含光催化剂物质的有机化合物层，在包含光催化剂物质的有机化合物层上形成元素层，所述有机化合物层包含光催化剂物质 被穿过第一衬底的光照射，并且元件层从第一衬底剥离。

公开(公告)号：US20110075038A1

公开(公告)日：2011-03-31

申请号：US12964838

申请日：2010-12-10

申请人： Shunpei YAMAZAKI ,  Hajime KIMURA ,  Mai AKIBA ,  Aya ANZAI ,  Yu YAMAZAKI

发明人： Shunpei YAMAZAKI ,  Hajime KIMURA ,  Mai AKIBA ,  Aya ANZAI ,  Yu YAMAZAKI

IPC分类号： H04N5/30

CPC分类号： G09G3/006 ,  G09G3/2022 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3291 ,  G09G2300/0809 ,  G09G2300/0842 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2310/061 ,  G09G2320/0233 ,  G09G2320/0285 ,  G09G2320/029 ,  G09G2320/0295 ,  G09G2320/043 ,  G09G2320/048 ,  G09G2320/0693

摘要： To provide a light emitting device without nonuniformity of luminance, a correcting circuit for correcting a video signal supplied to each pixel to a light emitting device. The correcting circuit is stored with data of a dispersion of a characteristic of a driving TFT among pixels and data of a change over time of luminance of a light emitting element. Further, by correcting a video signal inputted to the light emitting device in conformity with a characteristic of the driving TFT of each pixel and a degree of a deterioration of the light emitting element based on the over-described two data, nonuniformity of luminance caused by a deterioration of an electroluminescent layer and nonuniformity of luminance caused by dispersion of a characteristic of the driving TFT are restrained.

摘要翻译： 为了提供没有不均匀亮度的发光器件，用于将提供给每个像素的视频信号校正到发光器件的校正电路。 校正电路与像素中的驱动TFT的特性的色散的数据和发光元件的亮度随时间的变化的数据一起存储。 此外，通过根据上述两个数据，校正根据每个像素的驱动TFT的特性和发光元件的劣化程度输入到发光器件的视频信号，由 抑制了电致发光层的劣化以及由驱动TFT的特性的分散引起的亮度的不均匀性。