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公开(公告)号：US10032622B2
公开(公告)日：2018-07-24
申请号：US15712284
申请日：2017-09-22
发明人： Akinori Asai , Kenshi Fukumitsu
IPC分类号： H01J65/04 , H01J61/073 , G03F7/20
摘要： In a light source device, a control unit causes an energy density of a laser light in a lighting start region RS when a laser support light is maintained to be lower than an energy density of the laser light in the lighting start region RS when the laser support light is put on. For this reason, when the laser support light is maintained, a laser light L is radiated to the lighting start region RS at an energy density of a degree where sputtering does not occur. Therefore, in the light source device, because sputtering in a light emission sealing body can be suppressed, a sufficiently long life can be realized.
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公开(公告)号：US09711405B2
公开(公告)日：2017-07-18
申请号：US14984066
申请日：2015-12-30
IPC分类号： H01L21/00 , H01L21/78 , H01L21/768 , B23K26/00 , B28D5/00 , H01L21/304 , H01L23/00 , B23K26/0622 , B23K26/40 , H01L21/268 , H01L21/683 , H01L23/544 , H01L21/306 , B23K103/00
CPC分类号： H01L21/78 , B23K26/0057 , B23K26/0622 , B23K26/40 , B23K26/53 , B23K2103/50 , B23K2203/50 , B28D5/00 , B28D5/0011 , H01L21/268 , H01L21/304 , H01L21/30604 , H01L21/6836 , H01L21/76894 , H01L23/544 , H01L23/562 , H01L2221/68327 , H01L2221/68336 , H01L2223/5446 , H01L2924/00 , H01L2924/0002
摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.
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公开(公告)号：US09548246B2
公开(公告)日：2017-01-17
申请号：US15226519
申请日：2016-08-02
IPC分类号： H01L21/00 , H01L21/78 , H01L21/268 , H01L21/304 , H01L23/00 , H01L21/306 , H01L21/683
CPC分类号： H01L21/78 , B23K26/0057 , B23K26/0622 , B23K26/40 , B23K26/53 , B23K2103/50 , B23K2203/50 , B28D5/00 , B28D5/0011 , H01L21/268 , H01L21/304 , H01L21/30604 , H01L21/6836 , H01L21/76894 , H01L23/544 , H01L23/562 , H01L2221/68327 , H01L2221/68336 , H01L2223/5446 , H01L2924/00 , H01L2924/0002
摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping, and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.
摘要翻译： 一种衬底分割方法，其可以在防止碎裂的同时对衬底进行薄层化和分裂，并发生裂纹。 该基板分割方法包括以下步骤：将具有形成有功能元件19的正面3的半导体基板1照射在基板内，同时将聚光点定位在基板内，从而形成包含熔融处理区域的改质区域 在半导体衬底1内进行多光子吸收，并且使包含熔融处理区域的改性区域形成切割起点区域; 在形成用于切割的起点区域的步骤之后，研磨半导体衬底1的后表面21，使得半导体衬底1达到预定厚度。
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公开(公告)号：US09287177B2
公开(公告)日：2016-03-15
申请号：US14793181
申请日：2015-07-07
IPC分类号： H01L21/00 , H01L21/78 , H01L21/304 , H01L23/00
CPC分类号： H01L21/78 , B23K26/0057 , B23K26/0622 , B23K26/40 , B23K26/53 , B23K2103/50 , B23K2203/50 , B28D5/00 , B28D5/0011 , H01L21/268 , H01L21/304 , H01L21/30604 , H01L21/6836 , H01L21/76894 , H01L23/544 , H01L23/562 , H01L2221/68327 , H01L2221/68336 , H01L2223/5446 , H01L2924/00 , H01L2924/0002
摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.
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公开(公告)号：US11424162B2
公开(公告)日：2022-08-23
申请号：US17202807
申请日：2021-03-16
IPC分类号： H01L23/00 , H01L21/78 , H01L21/768 , B23K26/53 , B28D5/00 , B23K26/0622 , B23K26/40 , H01L21/304 , H01L21/268 , H01L21/683 , H01L23/544 , H01L21/306 , B23K103/00
摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.
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公开(公告)号：US10796959B2
公开(公告)日：2020-10-06
申请号：US15808211
申请日：2017-11-09
IPC分类号： B23K26/00 , B23K26/02 , H01L21/78 , B23K26/53 , B23K26/16 , B23K26/0622 , B23K26/066 , B23K26/40 , B23K26/364 , B23K20/02 , B23K20/16 , B23K20/233 , B23K20/26 , B23K26/03 , B23K26/046 , B23K26/073 , B23K26/08 , B28D5/00 , C03B33/023 , C03B33/08 , C03B33/10 , C03C23/00 , B23K101/40 , B23K103/00 , G02F1/1368 , H01L21/683
摘要： A laser beam machining method and a laser beam machining device capable of cutting a work without producing a fusing and a cracking out of a predetermined cutting line on the surface of the work, wherein at pulse laser beam is radiated on the predetermined cut line on the surface of the work under the conditions causing a multiple photon absorption and with a condensed point aligned to the inside of the work, and a modified area is formed inside the work along the predetermined determined cut line by moving the condensed point along the predetermined cut line, whereby the work can be cut with a rather small force by cracking the work along the predetermined cut line starting from the modified area and, because the pulse laser beam radiated is not almost absorbed onto the surface of the work, the surface is not fused even if the modified area is formed.
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公开(公告)号：US08889525B2
公开(公告)日：2014-11-18
申请号：US13953443
申请日：2013-07-29
CPC分类号： H01L21/78 , B23K26/0057 , B23K26/0622 , B23K26/40 , B23K26/53 , B23K2103/50 , B23K2203/50 , B28D5/00 , B28D5/0011 , H01L21/268 , H01L21/304 , H01L21/30604 , H01L21/6836 , H01L21/76894 , H01L23/544 , H01L23/562 , H01L2221/68327 , H01L2221/68336 , H01L2223/5446 , H01L2924/00 , H01L2924/0002
摘要： A substrate dividing method which can thin and divide a substrate while preventing chipping and cracking from occurring. This substrate dividing method comprises the steps of irradiating a semiconductor substrate 1 having a front face 3 formed with functional devices 19 with laser light while positioning a light-converging point within the substrate, so as to form a modified region including a molten processed region due to multiphoton absorption within the semiconductor substrate 1, and causing the modified region including the molten processed region to form a starting point region for cutting; and grinding a rear face 21 of the semiconductor substrate 1 after the step of forming the starting point region for cutting such that the semiconductor substrate 1 attains a predetermined thickness.
摘要翻译： 一种衬底分割方法，其可以在防止发生破裂和破裂的同时使衬底细分割。 该基板分割方法包括以下步骤：将具有形成有功能元件19的正面3的半导体基板1照射在基板内，同时将聚光点定位在基板内，从而形成包含熔融处理区域的改质区域 在半导体衬底1内进行多光子吸收，并且使包含熔融处理区域的改性区域形成切割起点区域; 在形成用于切割的起点区域的步骤之后，研磨半导体衬底1的后表面21，使得半导体衬底1达到预定厚度。
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公开(公告)号：US08802543B2
公开(公告)日：2014-08-12
申请号：US14082825
申请日：2013-11-18
发明人： Fumitsugu Fukuyo , Kenshi Fukumitsu
IPC分类号： H01L21/00
CPC分类号： H01L21/78 , B23K26/40 , B23K26/53 , B23K2101/40 , B23K2103/50 , B28D1/221 , B28D5/0011 , C03B33/0222 , C03B33/033 , C03B33/07 , C03B33/074 , H01L2924/01015
摘要： A laser processing method which can highly accurately cut objects to be processed having various laminate structures is provided. An object to be processed comprising a substrate and a laminate part disposed on the front face of the substrate is irradiated with laser light L while a light-converging point P is positioned at least within the substrate, so as to form a modified region due to multiphoton absorption at least within the substrate, and cause the modified region to form a starting point region for cutting. When the object is cut along the starting point region for cutting, the object 1 can be cut with a high accuracy.
摘要翻译： 提供了能够高精度地切割具有各种层叠结构的待处理物体的激光加工方法。 在聚光点P至少位于基板内的状态下，用激光L照射设置在基板前表面上的基板和层叠体的被处理物，以形成由于 至少在衬底内的多光子吸收，并且使改质区域形成切割起点区域。 当沿着切割起点区域切割物体时，可以高精度地切割物体1。
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公开(公告)号：US10556293B2
公开(公告)日：2020-02-11
申请号：US15398332
申请日：2017-01-04
发明人： Kenshi Fukumitsu
IPC分类号： B23K26/00 , B23K26/0622 , C03B33/02 , B23K26/53 , B23K26/06 , B28D5/00 , B23K103/00
摘要： The controllability of modified spots is improved. A laser processing apparatus 100 comprises a first laser light source 101 for emitting a first pulsed laser light L1, a second laser light source 102 for emitting a second pulsed laser light L2, half-wave plates 104, 105 for respectively changing directions of polarization of the pulsed laser light L1, L2, polarization beam splitters 106, 107 for respectively polarization-separating the pulsed laser light L1, L2 having changed the directions of polarization, and a condenser lens 112 for converging the polarization-separated pulsed laser light L1, L2 at an object to be processed 1. When the directions of polarization of the pulsed laser light L1, L2 changed by the half-wave plates 104, 105 are varied by a light intensity controller 121 in the laser processing apparatus 100, the ratios of the pulsed laser light L1, L2 polarization-separated by the polarization beam splitters 106, 107 are altered, whereby the respective intensities of the pulsed laser light L1, L2 are adjusted.
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公开(公告)号：US10293433B2
公开(公告)日：2019-05-21
申请号：US15255926
申请日：2016-09-02
发明人： Kazuhiro Atsumi , Koji Kuno , Masayoshi Kusunoki , Tatsuya Suzuki , Kenshi Fukumitsu , Fumitsugu Fukuyo
IPC分类号： B23K26/04 , B23K26/046 , H01L21/67 , B23K26/53 , B28D5/00 , H01L21/78 , B23K26/06 , B23K26/00 , B23K26/38 , B23K26/40 , B23K101/40 , B23K103/00
摘要： A laser processing method which can efficiently perform laser processing while minimizing the deviation of the converging point of a laser beam in end parts of an object to be processed is provided.This laser processing method comprises a preparatory step of holding a lens at an initial position set such that a converging point is located at a predetermined position within the object; a first processing step (S11 and S12) of emitting a first laser beam for processing while holding the lens at the initial position, and moving the lens and the object relative to each other along a main surface so as to form a modified region in one end part of a line to cut; and a second processing step (S13 and S14) of releasing the lens from being held at the initial position after forming the modified region in the one end part of the line to cut, and then moving the lens and the object relative to each other along the main surface while adjusting the gap between the lens and the main surface after the release, so as to form the modified region.
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