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22 条记录 (耗时 0.028 秒)

    Precursors for depositing silicon-containing films and methods for making and using same
    11.
    发明授权
    Precursors for depositing silicon-containing films and methods for making and using same 有权
    用于沉积含硅膜的前体及其制造和使用方法

    公开(公告)号：US08129555B2

    公开(公告)日：2012-03-06

    申请号：US12190125

    申请日：2008-08-12

    申请人： Hansong Cheng ,  Manchao Xiao ,  Gauri Sankar Lal ,  Thomas Richard Gaffney ,  Chenggang Zhou ,  Jinping Wu

    发明人： Hansong Cheng ,  Manchao Xiao ,  Gauri Sankar Lal ,  Thomas Richard Gaffney ,  Chenggang Zhou ,  Jinping Wu

    IPC分类号： C07F7/10 ,  H01L21/31

    CPC分类号： C23C16/345 ,  C07F7/025

    摘要： Aminosilane precursors for depositing silicon-containing films, and methods for depositing silicon-containing films from these aminosilane precursors, are described herein. In one embodiment, there is provided an aminosilane precursor for depositing silicon-containing film comprising the following formula (I): (R1R2N)nSiR34-n  (I) wherein substituents R1 and R2 are each independently chosen from an alkyl group comprising from 1 to 20 carbon atoms and an aryl group comprising from 6 to 30 carbon atoms, at least one of substituents R1 and R2 comprises at least one electron withdrawing substituent chosen from F, Cl, Br, I, CN, NO2, PO(OR)2, OR, SO, SO2, SO2R and wherein R in the at least one electron withdrawing substituent is chosen from an alkyl group or an aryl group, R3 is chosen from H, an alkyl group, or an aryl group, and n is a number ranging from 1 to 4.

    摘要翻译： 本文描述了用于沉积含硅膜的氨基硅烷前体，以及用于从这些氨基硅烷前体沉积含硅膜的方法。 在一个实施方案中，提供了用于沉积含硅膜的氨基硅烷前体，其包含下式（I）：（R 1 R 2 N）n SiR 34-n（I），其中取代基R 1和R 2各自独立地选自包含1至 20个碳原子和包含6至30个碳原子的芳基，取代基R 1和R 2中的至少一个包含至少一个选自F，Cl，Br，I，CN，NO 2，PO（OR）2的吸电子取代基， OR，SO，SO 2，SO 2 R，并且其中至少一个吸电子取代基中的R选自烷基或芳基，R 3选自H，烷基或芳基，n是数 从1到4。

    Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane
    15.
    发明授权
    Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane 有权
    抑制取代环四硅氧烷聚合的稳定剂

    公开(公告)号：US07300995B2

    公开(公告)日：2007-11-27

    申请号：US11484094

    申请日：2006-07-11

    申请人： Steven Gerard Mayorga ,  Manchao Xiao ,  Thomas Richard Gaffney ,  Robert George Syvret

    发明人： Steven Gerard Mayorga ,  Manchao Xiao ,  Thomas Richard Gaffney ,  Robert George Syvret

    IPC分类号： C07F7/21

    CPC分类号： C23C16/401 ,  C07F7/20 ,  C07F7/21 ,  C08K5/13 ,  C09D4/00 ,  H01L21/02164 ,  H01L21/02271 ,  H01L21/31608 ,  C08G77/04

    摘要： The present invention is; (a) a process for stabilizing a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, against polymerization used in a chemical vapor deposition process for silicon oxides in electronic material fabrication comprising providing an effective amount of a free radical scavenger polymerization inhibitor to such cyclotetrasiloxane; and (b) a composition of a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, stabilized against polymerization used in a chemical vapor deposition process as a precursor for silicon oxides in electronic material fabrication, comprising; such cyclotetrasiloxane and a free radical scavenger polymerization inhibitor.

    摘要翻译： 本发明是 （a）用于稳定环四硅氧烷（例如1,3,5,7-四甲基环四硅氧烷）的方法，用于电子材料制造中用于氧化硅的化学气相沉积工艺中的聚合，包括提供有效量的自由基清除剂聚合抑制剂 到这种环四硅氧烷; 和（b）在电子材料制造中作为氧化硅前体的化学气相沉积方法中使用的稳定的聚合的1,3,5,7-四甲基环四硅氧烷的环四硅氧烷的组合物，包括： 这种环四硅氧烷和自由基清除剂聚合抑制剂。

    Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane
    16.
    发明授权
    Stabilizers to inhibit the polymerization of substituted cyclotetrasiloxane 有权
    抑制取代环四硅氧烷聚合的稳定剂

    公开(公告)号：US06858697B2

    公开(公告)日：2005-02-22

    申请号：US10029892

    申请日：2001-12-21

    申请人： Steven Gerard Mayorga ,  Manchao Xiao ,  Thomas Richard Gaffney

    发明人： Steven Gerard Mayorga ,  Manchao Xiao ,  Thomas Richard Gaffney

    IPC分类号： C07F7/20 ,  C07F7/21 ,  C09D4/00 ,  C23C16/40 ,  C23C16/42 ,  H01L21/316

    CPC分类号： C23C16/401 ,  C07F7/20 ,  C07F7/21 ,  C09D4/00 ,  H01L21/31608 ,  C08G77/04

    摘要： The present invention is; (a) a process for stabilizing a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, against polymerization used in a chemical vapor deposition process for silicon oxides in electronic material fabrication comprising providing an effective amount of a neutral to weakly acidic polymerization inhibitor to such cyclotetrasiloxane; and (b) a composition of a cyclotetrasiloxane, such as 1,3,5,7-tetramethylcyclotetrasiloxane, stabilized against polymerization used in a chemical vapor deposition process as a precursor for silicon oxides in electronic material fabrication, comprising; such cyclotetrasiloxane and a neutral to weakly acidic polymerization inhibitor. A free radical scavenger can also be included in the process and composition.

    摘要翻译： 本发明是 （a）用于稳定环四硅氧烷（例如1,3,5,7-四甲基环四硅氧烷）的方法，用于在用于电子材料制造中的氧化硅的化学气相沉积方法中使用的聚合，包括提供有效量的中性至弱酸性聚合 这种环四硅氧烷的抑制剂; 和（b）在电子材料制造中作为氧化硅前体的化学气相沉积方法中使用的稳定的聚合的1,3,5,7-四甲基环四硅氧烷的环四硅氧烷的组合物，包括： 这种环四硅氧烷和中性至弱酸性聚合抑制剂。 自由基清除剂也可以包含在该过程和组合物中。