公开(公告)号：US07709475B2

公开(公告)日：2010-05-04

申请号：US11596735

申请日：2005-05-19

申请人： Yoshikazu Iwasawa ,  Jun Shibata ,  Tadashi Shimamura ,  Hideki Kurihara ,  Takashi Mita ,  Nobuhiko Kawanishi ,  Takashi Hashihayata ,  Mikako Kawamura ,  Takeshi Sagara ,  Sachie Arai ,  Hiroshi Hirai

发明人： Yoshikazu Iwasawa ,  Jun Shibata ,  Tadashi Shimamura ,  Hideki Kurihara ,  Takashi Mita ,  Nobuhiko Kawanishi ,  Takashi Hashihayata ,  Mikako Kawamura ,  Takeshi Sagara ,  Sachie Arai ,  Hiroshi Hirai

IPC分类号： C07D417/12 ,  A61K31/506 ,  C07D417/14 ,  C07D491/08

CPC分类号： C07D417/14 ,  C07D417/12 ,  C07D491/08

摘要： The present invention relates to a compound represented by Formula [I]: wherein X is O, S, NH or CH2; Y1, Y2, Y3, Y4 and Y5, which may be identical or different, are each CH or N; however, at least one of Y1, Y2, Y3, Y4 and Y5 is N; Z1 and Z2, which may be identical or different, are each CH or N; n is an integer from 1 to 3; R1 is a C3-C8 cycloalkyl group, a C6-C10 aryl group, an aliphatic heterocyclic ring or an aromatic heterocyclic ring, or a bicyclic aliphatic saturated hydrocarbon group; R2 and R3, which may be identical or different, are each a hydrogen atom, a lower alkyl group, a lower alkenyl group, a C3-C8 cycloalkyl group, a C6-C10 aryl group, an aromatic heterocyclic ring, or the like; and R4 is a hydrogen atom, a lower alkyl group, a C3-C6 cycloalkyl group or the like, or a pharmaceutically acceptable salt or ester thereof, and a selective inhibitor against Cdk4 and/or Cdk6 or an anticancer agent containing the compound or a pharmaceutically acceptable salt or ester thereof.

摘要翻译： 本发明涉及由式[I]表示的化合物：其中X是O，S，NH或CH 2; Y1，Y2，Y3，Y4和Y5可以相同或不同，分别为CH或N; 然而，Y 1，Y 2，Y 3，Y 4和Y 5中的至少一个为N; 可以相同或不同的Z 1和Z 2各自为CH或N; n为1〜3的整数， R1是C3-C8环烷基，C6-C10芳基，脂族杂环或芳族杂环，或双环脂族饱和烃基; R2和R3可以相同或不同，分别为氢原子，低级烷基，低级烯基，C3-C8环烷基，C6-C10芳基，芳族杂环等; R4为氢原子，低级烷基，C3-C6环烷基等，或其药学上可接受的盐或酯，以及对Cdk4和/或Cdk6的选择性抑制剂或含有该化合物或 其药学上可接受的盐或酯。

公开(公告)号：US07046960B2

公开(公告)日：2006-05-16

申请号：US10001759

申请日：2001-10-24

申请人： Makoto Takemoto ,  Katsuyuki Kawase ,  Tetsu Takase ,  Jun Shibata

发明人： Makoto Takemoto ,  Katsuyuki Kawase ,  Tetsu Takase ,  Jun Shibata

IPC分类号： H04B7/14

CPC分类号： H04H20/06 ,  H04B1/52 ,  H04B1/525 ,  H04B7/15585 ,  H04H20/67

摘要： While a spectrum waveform of an output signal from a subtracter (207) is visibly monitored, an operator controls a variable phases shifter (208) based upon a second control signal (CL2) so that a shape of a spectrum waveform of an output signal from a subtracter (207) is approximated to a spectrum waveform of a desirable wave to change a phase of a local oscillation frequency signal from a local oscillator (206). As a result, a phase of a duplicated loop signal is changed. Also, the operator controls a variable attenuator (209) based upon a first control signal (CL1) so that a shape of this spectrum waveform is approximated to a spectrum waveform of a desirable wave (20) to change a signal level of the duplicated loop signal.

摘要翻译： 当可见地监视来自减法器（207）的输出信号的频谱波形时，操作员基于第二控制信号（CL 2）控制可变相移器（208），使得输出信号的频谱波形的形状 近似于从本地振荡器（206）改变本地振荡频率信号的相位的期望波的频谱波形。 结果，改变了重复的环路信号的相位。 另外，操作员根据第一控制信号（CL 1）控制可变衰减器（209），使得该频谱波形的形状近似于期望波（20）的频谱波形，以改变复制的信号的信号电平 回路信号。

公开(公告)号：US06545365B2

公开(公告)日：2003-04-08

申请号：US09781237

申请日：2001-02-13

申请人： Takashi Kondo ,  Koji Bando ,  Jun Shibata ,  Kazuko Narutaki

发明人： Takashi Kondo ,  Koji Bando ,  Jun Shibata ,  Kazuko Narutaki

IPC分类号： H01L2348

CPC分类号： H01L25/0657 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/06575 ,  H01L2225/06582 ,  H01L2924/15311 ,  H01L2924/00014 ,  H01L2924/00

摘要： A resin-sealed chip stack type semiconductor device comprises a substrate placed on many balls, a bottom chip to which wires are connected, a top chip to which wires are connected and mounted above the bottom chip, a non-conductive bonding layer which functions to bond and fix the two chips to each other, and a sealing resin which covers and protects all the components mounted on the substrate. The non-conductive bonding layer is provided by die bonding in such a manner that is at least covers the portion of the bottom chip where the corresponding wires are connected and does not allow generation of a gap between the two chips.

摘要翻译： 一种树脂密封芯片堆叠型半导体器件，包括放置在许多球上的衬底，连接有导线的底部芯片，连接并且安装在底部芯片上方的导线的顶部芯片，非导电结合层，其功能于 将两个芯片彼此粘合并固定，以及密封树脂，其覆盖并保护安装在基板上的所有部件。 非导电结合层通过芯片接合以至少覆盖底部芯片的相应导线连接部分并且不允许在两个芯片之间产生间隙的方式提供。

公开(公告)号：US5095200A

公开(公告)日：1992-03-10

申请号：US640278

申请日：1991-01-11

申请人： Kenichi Matsuda ,  Jun Shibata

发明人： Kenichi Matsuda ,  Jun Shibata

IPC分类号： G06E3/00 ,  G11C11/42 ,  H03K3/42 ,  H03K17/795

CPC分类号： H03K17/7955 ,  G06E3/006 ,  G11C11/42 ,  H03K3/42

摘要： An optoelectronic memory, logic, and interconnection device having an optical bistable circuit as an essential element. The optical bistable circuit includes an optical bistable switch which is a light emitting device and a first phototransistor detecting the light emitted from the light emitting device, connected in series, a second phototransistor connected in parallel to the optical bistable switch which does not detect the light emitted from the light emitting device, and a load resistor connected in series to the optical bistable switch. The optoelectronic memory, logic, and interconnection device operates as an optoelectronic memory device turned on and off with the same light source, as an optoelectronic logic device executing exclusive OR operation, or as a light source for reconfigurable optical interconnection.

摘要翻译： 具有光学双稳态电路作为必需元件的光电存储器，逻辑和互连器件。 光学双稳态电路包括光双稳态开关，其是发光器件和第一光电晶体管，其检测从串联连接的发光器件发射的光，并联连接到不检测光的光学双稳态开关的第二光电晶体管 从发光器件发射的负载电阻器和与光学双稳态开关串联连接的负载电阻器。 光电存储器，逻辑器件和互连器件作为光电存储器件工作，作为与执行异或运算的光电逻辑器件相同的光源，或作为用于可重构光互连的光源而导通和截止的光电存储器件。

公开(公告)号：US07582950B2

公开(公告)日：2009-09-01

申请号：US11190011

申请日：2005-07-27

申请人： Kazuhito Matsukawa ,  Tsuyoshi Koga ,  Akio Nishida ,  Yoshiko Higashide ,  Jun Shibata ,  Hiroshi Tobimatsu

发明人： Kazuhito Matsukawa ,  Tsuyoshi Koga ,  Akio Nishida ,  Yoshiko Higashide ,  Jun Shibata ,  Hiroshi Tobimatsu

IPC分类号： H01L29/06

CPC分类号： H01L25/0657 ,  H01L24/73 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48471 ,  H01L2224/73265 ,  H01L2225/0651 ,  H01L2225/06555 ,  H01L2225/06575 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： In a semiconductor chip A wherein an element layer 2 having transistors and the like is formed on the front face, and the back face is joined to an underlying member, such as a package substrate, the thickness T is made 100 μm or less, and thereafter, a gettering layer 3 is formed on the back face of the semiconductor chip A. The gettering layer 3 is formed, for example, by polishing the back face of said semiconductor chip A using a polishing machine. Thereby, the yield of devices can be improved in the step for assembling the package.

摘要翻译： 在半导体芯片A中，其中在正面上形成具有晶体管等的元件层2，并且背面与诸如封装基板的底层部件接合，厚度T为100μm以下， 此后，在半导体芯片A的背面上形成吸气层3.吸气层3例如通过使用研磨机对所述半导体芯片A的背面进行研磨而形成。 因此，在组装包装的步骤中可以提高装置的产量。

公开(公告)号：US20060019959A1

公开(公告)日：2006-01-26

申请号：US10532677

申请日：2003-10-27

申请人： Hiroshi Hirai ,  Nobuhiko Kawanishi ,  Masaaki Hirose ,  Tetsuya Sugimoto ,  Kaori Kamijyo ,  Jun Shibata ,  Kouta Masutani

发明人： Hiroshi Hirai ,  Nobuhiko Kawanishi ,  Masaaki Hirose ,  Tetsuya Sugimoto ,  Kaori Kamijyo ,  Jun Shibata ,  Kouta Masutani

IPC分类号： A61K31/498 ,  C07D498/14 ,  C07D491/14

CPC分类号： C07D487/18 ,  A61K31/4995 ,  A61K31/506 ,  A61K31/517 ,  A61K31/5377 ,  A61K31/55 ,  C07D498/18 ,  C07D498/22 ,  C07D515/18 ,  C07D515/22

摘要： A quinoxalinone derivative of the formula (I): or a pharmaceutically acceptable salt or ester thereof, wherein; X is NH, S or the like; Y is O or the like; the partial structure is, for example, the formula: B1, B2, . . . , Bn-1 and Bn, (in which n is 4, 5 or 6) are each independently CH, N or the like; B′1, B′2, . . . , B′n-1 and B′n (in which n is 4, 5 or 6) are each independently hydrogen or the like; and R is hydrogen, lower alkyl or the like.

摘要翻译： 式（I）的喹喔啉酮衍生物或其药学上可接受的盐或酯，其中： X是NH，S等; Y为O等; 该部分结构例如是以下公式：B 1，B 2，...。 。 。 （其中n为4,5或6）各自独立地为CH，N等;其中n为4或5或6。 B'1，B'2，...， 。 。 ，其中n为4,5或6个，各自独立地为氢等;其中n为4或5或6。 和R是氢，低级烷基等。

公开(公告)号：US06864587B2

公开(公告)日：2005-03-08

申请号：US10389958

申请日：2003-03-18

申请人： Jun Shibata

发明人： Jun Shibata

IPC分类号： H01L27/04 ,  H01L21/60 ,  H01L21/82 ,  H01L21/822 ,  H01L23/485 ,  H01L23/50 ,  H01L23/525 ,  H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/06 ,  H01L23/50 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05 ,  H01L2224/05554 ,  H01L2224/05578 ,  H01L2224/05624 ,  H01L2224/1134 ,  H01L2224/13028 ,  H01L2224/1308 ,  H01L2224/13099 ,  H01L2224/451 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49 ,  H01L2224/85399 ,  H01L2924/00014 ,  H01L2924/10161 ,  H01L2924/19043 ,  H01L2924/00 ,  H01L2224/45015 ,  H01L2924/207 ,  H01L2224/45099

摘要： A semiconductor device comprises a semiconductor substrate, an interlayer insulating film formed on the semiconductor substrate, a first pad, a second pad and a conductor. The first pad is formed on the interlayer insulating film and its circumferential edges are covered with a first surface-protecting film. The second pad formed on the interlayer insulating film facing the first pad across a second surface-protecting film, and its circumferential edges are covered with a third surface-protecting film. The conductor is provided continuously on the first pad, the first to third surface-protecting films, and the second pad.

摘要翻译： 半导体器件包括半导体衬底，形成在半导体衬底上的层间绝缘膜，第一焊盘，第二焊盘和导体。 第一焊盘形成在层间绝缘膜上，并且其周边边缘被第一表面保护膜覆盖。 第二焊盘在第二表面保护膜上面对第一焊盘的层间绝缘膜上形成，其周向边缘被第三表面保护膜覆盖。 导体连续设置在第一焊盘，第一至第三表面保护膜和第二焊盘上。

公开(公告)号：US5777150A

公开(公告)日：1998-07-07

申请号：US696152

申请日：1996-08-13

申请人： Takashi Nomoto ,  Masahiro Hayashi ,  Jun Shibata ,  Yoshikazu Iwasawa ,  Morihiro Mitsuya ,  Yoshiaki Iida ,  Katsumasa Nonoshita ,  Yasufumi Nagata

发明人： Takashi Nomoto ,  Masahiro Hayashi ,  Jun Shibata ,  Yoshikazu Iwasawa ,  Morihiro Mitsuya ,  Yoshiaki Iida ,  Katsumasa Nonoshita ,  Yasufumi Nagata

IPC分类号： C07C69/34 ,  C07C211/27 ,  C07C211/29 ,  C07C215/52 ,  C07C217/60 ,  C07C233/05 ,  C07C233/13 ,  C07C233/18 ,  C07C235/06 ,  C07D213/38 ,  C07D213/40 ,  C07D215/12 ,  C07D215/48 ,  C07D263/32 ,  C07D307/14 ,  C07D307/52 ,  C07D307/81 ,  C07D317/58 ,  C07D333/20 ,  C07D333/28 ,  C07D333/54 ,  C07D333/58 ,  C07C69/78 ,  C07C69/767 ,  C07C69/773 ,  C07D317/34

CPC分类号： C07D213/40 ,  C07C211/27 ,  C07C211/29 ,  C07C215/52 ,  C07C217/60 ,  C07C233/05 ,  C07C233/13 ,  C07C233/18 ,  C07C235/06 ,  C07C69/34 ,  C07D213/38 ,  C07D215/12 ,  C07D215/48 ,  C07D263/32 ,  C07D307/14 ,  C07D307/52 ,  C07D307/81 ,  C07D317/58 ,  C07D333/20 ,  C07D333/28 ,  C07D333/54 ,  C07D333/58

摘要： A compound of the formula (I) or its pharmaceutically acceptable salt or ester: ##STR1## wherein each of ##STR2## which are the same or different, is an aryl group or a heteroaromatic ring group; A is a C.sub.3-8 linear saturated or unsaturated aliphatic hydrocarbon group which may have substituent(s) selected from the group consisting of a lower alkyl group, a hydroxyl group, a lower alkoxy group, a carboxyl group, an aryl group and an aralkyl group; Q is a single bond or a group of the formula --CO--O--, --O--CO--, --CH.sub.2 CH.sub.2 --, --CH.dbd.CH--, --OCH.sub.2 --, --SCH.sub.2 --, --CH.sub.2 O-- or --CH.sub.2 S--; each of R.sup.1, R.sup.2, R.sup.3 and R.sup.4 which are the same or different, is a hydrogen atom, a halogen atom, a lower alkyl group, a hydroxyl group, a lower alkoxy group, or an aryl or heteroaromatic ring group which may have substituent(s) selected from the group consisting of a halogen atom, a lower alkyl group and a lower alkoxy group; each of R.sup.5, R.sup.6 and R.sup.7 which are the same or different, is a hydrogen atom or a lower alkyl group; and R.sup.8 is a hydrogen atom, a lower alkyl group, a lower alkenyl group, a lower alkynyl group or an aralkyl group, provided that when Q is a single bond, ##STR3## are not simultaneously 4-chlorophenyl groups.

摘要翻译： 式（I）化合物或其药学上可接受的盐或酯：其中每个相同或不同的芳基是芳基或杂芳环; A是可以具有选自低级烷基，羟基，低级烷氧基，羧基，芳基和芳烷基的取代基的C3-8直链饱和或不饱和脂族烃基 组; Q是单键或式-CO-O-，-O-CO-，-CH 2 CH 2 - ， - CH = CH - ， - OCH 2 - ， - CH 2 - ， - CH 2 O-或-CH 2 S--的基团; R 1，R 2，R 3和R 4相同或不同的是氢原子，卤素原子，低级烷基，羟基，低级烷氧基或可具有取代基的芳基或杂芳族环基 选自卤素原子，低级烷基和低级烷氧基的基团; R 5，R 6和R 7各自相同或不同，为氢原子或低级烷基; 并且R8是氢原子，低级烷基，低级烯基，低级炔基或芳烷基，条件是当Q为单键时，＆lt; IMAGE＆gt;不同时为4-氯苯基。

公开(公告)号：US5315105A

公开(公告)日：1994-05-24

申请号：US100076

申请日：1993-07-29

申请人： Kenichi Matsuda ,  Jun Shibata

发明人： Kenichi Matsuda ,  Jun Shibata

IPC分类号： G02F3/02 ,  G06C3/00 ,  H01L27/144 ,  H01L27/15 ,  H01L31/10 ,  H03K19/14 ,  H01J40/14

CPC分类号： H01L27/1443 ,  H01L27/15

摘要： An optical operational memory device comprises a light-emitting device, a first and second phototransistors, and a load resistor. The light-emitting device and the first phototransistor are connected electrically in series to form an optical bistable switch based on optical positive feedback. The second phototransistor is connected in parallel to the optical bistable switch, and the load resistor is connected in series to the optical bistable switch. The time constant given by the product of the current gain of the second phototransistor, the base-collector capacitance of the second phototransistor, and the resistance of the load resistor is larger than the period required for recombination of the excess majority carriers in the base of the first phototransistor. A single optical beam modulated with pulse signals is input to the first and the second phototransistors simultaneously. The optical pulse with a peak power in a predetermined range turns the optical bistable switch on, and the pulse with higher peak power turns the optical bistable switch off.

摘要翻译： 光学操作存储器件包括发光器件，第一和第二光电晶体管和负载电阻器。 发光器件和第一光电晶体管串联电连接以形成基于光学正反馈的光学双稳态开关。 第二光电晶体管与光双稳态开关并联连接，负载电阻与光双稳态开关串联。 由第二光电晶体管的电流增益，第二光电晶体管的基极集电极电容和负载电阻的电阻的乘积给出的时间常数大于基极中的多余载流子的复合所需的时间 第一个光电晶体管。 用脉冲信号调制的单个光束同时输入到第一和第二光电晶体管。 具有预定范围内的峰值功率的光脉冲使光学双稳态开关导通，并且具有较高峰值功率的脉冲使光学双稳态开关断开。

公开(公告)号：US4956682A

公开(公告)日：1990-09-11

申请号：US154214

申请日：1988-02-10

申请人： Kiyoshi Ohnaka ,  Hiraaki Tsujii ,  Yoichi Sasai ,  Jun Shibata

发明人： Kiyoshi Ohnaka ,  Hiraaki Tsujii ,  Yoichi Sasai ,  Jun Shibata

IPC分类号： H01L27/15 ,  H01S5/026 ,  H01S5/062

CPC分类号： H01L27/15 ,  H01S5/0261 ,  H01S5/06203

摘要： An optoelectronic integrated circuit includes an N.sup.+ type cladding layer, an N type cladding layer, an active layer smaller in band gap than the N type cladding layer and a P type waveguide greater in band gap than the active layer sequentially formed on a semi-insulating substrate, a P type cladding layer partially formed on the surface of the P type waveguide, a laser composed of these N.sup.+ type and N type cladding layers, active layer, waveguide and P type cladding layer, and an N type emitted layer wider in band gap than the P type waveguide formed partially on the surface of the P type waveguide, thereby composing a heterojunction bipolar transistor using the N type cladding layer as the collector and the P type waveguide as the base.

摘要翻译： 光电集成电路包括N +型覆层，N型覆层，与N型覆层相比带隙小的有源层和比半导体层顺序形成的有源层更大的带隙的P型波导 基板，部分地形成在P型波导的表面上的P型包覆层，由这些N +型和N型覆盖层，有源层，波导和P型覆层形成的激光，以及更宽带的N型发射层 间隙比部分地形成在P型波导表面上的P型波导，从而构成使用N型包覆层作为集电体和P型波导作为基极的异质结双极晶体管。