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38 条记录 (耗时 0.019 秒)

    SOLAR CELL AND METHOD FOR PRODUCING THE SAME
    13.
    发明申请
    SOLAR CELL AND METHOD FOR PRODUCING THE SAME 审中-公开
    太阳能电池及其制造方法

    公开(公告)号：US20090205707A1

    公开(公告)日：2009-08-20

    申请号：US12388145

    申请日：2009-02-18

    申请人： Yoshiaki IKENOUE ,  Naoki Fukunaga ,  Hironao Shinohara ,  Hisayuki Miki ,  Kenzo Hanawa ,  Hiroaki Kaji ,  Hitoshi Yokouchi ,  Ryoko Konta

    发明人： Yoshiaki IKENOUE ,  Naoki Fukunaga ,  Hironao Shinohara ,  Hisayuki Miki ,  Kenzo Hanawa ,  Hiroaki Kaji ,  Hitoshi Yokouchi ,  Ryoko Konta

    IPC分类号： H01L31/00 ,  H01L21/306

    CPC分类号： H01L31/022466 ,  H01L31/0687 ,  H01L31/0693 ,  H01L31/1852 ,  H01L31/186 ,  H01L31/1884 ,  Y02E10/544 ,  Y02P70/521

    摘要： The object of the present invention is to provide a solar cell which is industrially beneficial and has high light conversion efficiency; and a method for producing a solar cell; and the present invention provides a solar cell comprising a substrate, a power generation layer for converting received light into electrical power, a translucent electrode, and another electrode, when light travels through each member from a first surface thereof, a surface opposite to the first surface is defined as a second surface, the power generation layer is formed at a second surface side of the substrate, the translucent electrode is formed on one surface of the power generation layer, and another electrode is formed on the other surface of the power generation layer, wherein the translucent electrode comprises hexagonal In2O3 crystal.

    摘要翻译： 本发明的目的是提供一种在工业上有益且具有高的光转换效率的太阳能电池; 以及太阳能电池的制造方法。 并且本发明提供了一种太阳能电池，其包括基板，用于将接收的光转换为电力的发电层，透光性电极和另一电极，当光从其第一表面穿过各构件时，与第一 表面被定义为第二表面，发电层形成在基板的第二表面侧，透光性电极形成在发电层的一个表面上，另一个电极形成在发电的另一个表面上 层，其中所述透光性电极包含六方晶In2O3晶体。

    Regulator circuit and semiconductor device therewith
    15.
    发明申请
    Regulator circuit and semiconductor device therewith 审中-公开
    调节器电路及其半导体器件

    公开(公告)号：US20070145484A1

    公开(公告)日：2007-06-28

    申请号：US11591479

    申请日：2006-11-02

    申请人： Makoto Hosokawa ,  Toshihiko Fukushima ,  Naoki Fukunaga

    发明人： Makoto Hosokawa ,  Toshihiko Fukushima ,  Naoki Fukunaga

    IPC分类号： H01L23/62

    CPC分类号： H01L27/0259

    摘要： A regulator circuit including an output-stage transistor for supplying a current to an external circuit has an electrostatic protection transistor formed in parallel with the output-stage transistor. The base of the electrostatic protection transistor is connected to, for example, the base of the output-stage transistor, or alternatively to a ground line or to the emitter of the electrostatic protection transistor itself.

    摘要翻译： 包括用于向外部电路提供电流的输出级晶体管的调节器电路具有与输出级晶体管并联形成的静电保护晶体管。 静电保护晶体管的基极连接到例如输出级晶体管的基极，或者替代地连接到静电保护晶体管本身的接地线或发射极。

    Light sensitive element and light sensitive element having internal circuitry
    16.
    发明授权
    Light sensitive element and light sensitive element having internal circuitry 有权
    具有内部电路的光敏元件和光敏元件

    公开(公告)号：US06404029B1

    公开(公告)日：2002-06-11

    申请号：US09656461

    申请日：2000-09-06

    申请人： Makoto Hosokawa ,  Naoki Fukunaga ,  Takahiro Takimoto ,  Masaru Kubo ,  Toshihiko Fukushima ,  Isamu Ohkubo

    发明人： Makoto Hosokawa ,  Naoki Fukunaga ,  Takahiro Takimoto ,  Masaru Kubo ,  Toshihiko Fukushima ,  Isamu Ohkubo

    IPC分类号： H01L2714

    CPC分类号： H01L27/1443 ,  H01L31/0352

    摘要： A photosensitive device includes a semiconductor substrate and a first semiconductor layer, both of a first conductivity type, with the semiconductor layer being formed on the semiconductor substrate and having a lower impurity concentration than that of the semiconductor substrate. A second semiconductor layer, of a second conductivity type, is formed on the first semiconductor layer and at least one diffusion layer of the first conductivity type is formed from the surface of the second semiconductor layer so as to reach the surface of the first semiconductor layer. The diffusion layer subdivides the second semiconductor layer into a plurality of semiconductor regions At least one photodiode portion for converting signal light into an electrical signal is formed at a junction between at least one of the plurality of semiconductor regions and the first semiconductor layer. A depletion layer which is formed in the first semiconductor layer when a reverse bias voltage is applied to the at least one photodiode portion has a field intensity of about 0.3 V/&mgr;m or more.

    摘要翻译： 光敏器件包括半导体衬底和第一半导体层，它们都是第一导电型，半导体层形成在半导体衬底上，杂质浓度低于半导体衬底的半导体层。 第二导电类型的第二半导体层形成在第一半导体层上，并且从第二半导体层的表面形成至少一个第一导电类型的扩散层，以到达第一半导体层的表面 。 扩散层将第二半导体层细分为多个半导体区域在多个半导体区域和第一半导体层中的至少一个之间的接合处形成至少一个用于将信号光转换成电信号的光电二极管部分。 当向至少一个光电二极管部分施加反向偏置电压时，在第一半导体层中形成的耗尽层具有约0.3V / m 2以上的场强度。

    Light receiving device with isolation regions
    17.
    发明授权
    Light receiving device with isolation regions 失效
    具有隔离区域的光接收装置

    公开(公告)号：US5602415A

    公开(公告)日：1997-02-11

    申请号：US458772

    申请日：1995-06-02

    申请人： Masaru Kubo ,  Naoki Fukunaga ,  Motohiko Yamamoto

    发明人： Masaru Kubo ,  Naoki Fukunaga ,  Motohiko Yamamoto

    IPC分类号： H01L27/14 ,  H01L27/144 ,  H01L31/10 ,  H01L31/00

    CPC分类号： H01L27/1443

    摘要： A light receiving device including a semiconductor substrate of a first conductivity type; a first semiconductor layer of a second conductivity type which is formed on the semiconductor substrate of the first conductivity type; and a semiconductor layer of the first conductivity type which elongates from a surface of the first semiconductor substrate of the second conductivity type to reach a surface of the semiconductor substrate of the first conductivity type, the semiconductor layer splitting the first semiconductor layer of the second conductivity type into a plurality of semiconductor regions of the second conductivity type. The portion of the semiconductor layer of the first conductivity type which overlaps with the semiconductor substrate of the first conductivity type is formed as a semiconductor region of the first conductivity type and has a high-impurity density. The semiconductor regions of the second conductivity type, and semiconductor substrate of the first conductivity type below such regions form a plurality of light detecting photodiode portions for detecting signal light. The device further includes a second semiconductor layer of the second conductivity type being buried in a part of the semiconductor substrate of the first conductivity type which constitutes each of the light detecting photodiode portions.

    摘要翻译： 一种光接收装置，包括第一导电类型的半导体衬底; 形成在第一导电类型的半导体衬底上的第二导电类型的第一半导体层; 以及第一导电类型的半导体层，其从第二导电类型的第一半导体衬底的表面延伸到达第一导电类型的半导体衬底的表面，半导体层将第二半导体层的第二导电率 形成第二导电类型的多个半导体区域。 与第一导电类型的半导体衬底重叠的第一导电类型的半导体层的部分形成为第一导电类型的半导体区域并且具有高杂质密度。 第二导电类型的半导体区域和在这种区域之下的第一导电类型的半导体衬底形成用于检测信号光的多个光检测光电二极管部分。 该器件还包括第二导电类型的第二半导体层，其被埋在构成每个光检测光电二极管部分的第一导电类型的半导体衬底的一部分中。

    GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE
    19.
    发明申请
    GALLIUM NITRIDE-BASED COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    基于氮化镓的化合物半导体发光器件

    公开(公告)号：US20100176418A1

    公开(公告)日：2010-07-15

    申请号：US12065172

    申请日：2007-11-08

    申请人： Noritaka Muraki ,  Naoki Fukunaga

    发明人： Noritaka Muraki ,  Naoki Fukunaga

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/18 ,  H01L33/32

    摘要： An object of the present invention is to provide a gallium nitride-based compound semiconductor light emitting device having superior light extraction efficiency and light distribution uniformity.The inventive gallium nitride-based compound semiconductor light emitting device comprises a substrate and a gallium nitride-based compound semiconductor layer stacked on the substrate, wherein on at least one lateral surface of the light emitting device, the bottom (substrate side) of the semiconductor layer is a reverse taper inclined 5 to 85 degrees relative to the substrate main surface and the top of the semiconductor layer is a forward taper inclined 95 to 175 degrees relative to the substrate main surface.

    摘要翻译： 本发明的目的是提供具有优异的光提取效率和光分布均匀性的氮化镓基化合物半导体发光器件。 本发明的氮化镓基化合物半导体发光器件包括基板和层叠在基板上的氮化镓基化合物半导体层，其中在发光器件的至少一个侧表面上，半导体的底部（衬底侧） 层是相对于基板主表面倾斜5至85度的倒锥度，并且半导体层的顶部是相对于基板主表面倾斜95至175度的前锥度。

    GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND LAMP INCLUDING THE SAME
    20.
    发明申请
    GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING THE SAME, AND LAMP INCLUDING THE SAME 有权
    氮化镓化合物半导体发光器件，其制造方法和包括其的灯

    公开(公告)号：US20100163886A1

    公开(公告)日：2010-07-01

    申请号：US12293680

    申请日：2007-03-23

    申请人： Naoki Fukunaga ,  Hiroshi Osawa

    发明人： Naoki Fukunaga ,  Hiroshi Osawa

    IPC分类号： H01L33/30 ,  H01L21/28 ,  H01L33/42

    CPC分类号： H01L33/0095 ,  H01L33/14 ,  H01L33/32 ,  H01L33/42

    摘要： The present invention provides a gallium nitride compound semiconductor light-emitting device that prevents an increase in the specific resistance of a p-type semiconductor layer due to hydrogen annealing and reduces the specific resistance of a translucent conductive oxide film to lower a driving voltage Vf, a method of manufacturing the same, and a lamp including the same. The method of manufacturing the gallium nitride compound semiconductor light-emitting device includes: forming a positive electrode 15 composed of a translucent conductive oxide film on a p-type GaN layer 14 of a gallium nitride compound semiconductor device; and a hydrogen annealing process of annealing the positive electrode 15 in a gas atmosphere including hydrogen (H2).

    摘要翻译： 本发明提供了一种氮化镓化合物半导体发光器件，其防止由于氢退火引起的p型半导体层的电阻率的增加，并且降低了透光性导电氧化物膜的电阻率以降低驱动电压Vf， 其制造方法以及包括该灯的灯。 制造氮化镓系化合物半导体发光元件的方法包括：在氮化镓系化合物半导体器件的p型GaN层14上形成由透光性导电氧化物膜构成的正极15; 以及在包括氢（H 2）的气体气氛中退火正极15的氢退火工艺。