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26 条记录 (耗时 0.025 秒)

    Semi-insulating silicon carbide without vanadium domination
    11.
    发明授权
    Semi-insulating silicon carbide without vanadium domination 有权
    半绝缘碳化硅无钒支配

    公开(公告)号：US06396080B2

    公开(公告)日：2002-05-28

    申请号：US09866129

    申请日：2001-05-25

    申请人： Calvin H. Carter, Jr. ,  Mark Brady ,  Valeri F. Tsvetkov

    发明人： Calvin H. Carter, Jr. ,  Mark Brady ,  Valeri F. Tsvetkov

    IPC分类号： H01L310312

    CPC分类号： H01L29/1608 ,  C30B23/00 ,  C30B29/36 ,  C30B33/00 ,  H01L29/778 ,  H01L29/78 ,  H01L29/812

    摘要： A semi-insulating bulk single crystal of silicon carbide is disclosed that has a resistivity of at least 5000 &OHgr;-cm at room temperature and a concentration of trapping elements that create states at least 700 meV from the valence or conduction band that is below the amounts that will affect the resistivity of the crystal, preferably below detectable levels. A method of forming the crystal is also disclosed, along with some resulting devices that take advantage of the microwave frequency capabilities of devices formed using substrates according to the invention.

    摘要翻译： 公开了半导体碳化硅单体，其在室温下具有至少5000欧姆 - 厘米的电阻率，并且捕获元素的浓度从产生低于量的价态或导带产生至少700meV的状态 这将影响晶体的电阻率，优选低于可检测水平。 还公开了形成晶体的方法，以及利用根据本发明的基板形成的器件的微波频率能力的一些所得到的器件。

    Nonvolatile random access memory device having transistor and capacitor made in silicon carbide substrate
    12.
    发明授权
    Nonvolatile random access memory device having transistor and capacitor made in silicon carbide substrate 失效
    具有在碳化硅衬底中制成的晶体管和电容器的非易失性随机存储器件

    公开(公告)号：US5465249A

    公开(公告)日：1995-11-07

    申请号：US798219

    申请日：1991-11-26

    申请人： James A. Cooper, Jr. ,  John W. Palmour ,  Calvin H. Carter, Jr.

    发明人： James A. Cooper, Jr. ,  John W. Palmour ,  Calvin H. Carter, Jr.

    IPC分类号： G11C14/00 ,  G11C11/404 ,  G11C17/00 ,  H01L21/8229 ,  H01L21/8246 ,  H01L27/102 ,  H01L27/105 ,  H01L29/24 ,  G11C11/401

    CPC分类号： H01L29/1608 ,  G11C11/404 ,  H01L27/1023

    摘要： A random access memory (RAM) cell in 6H-SiC having storage times when all bias is removed long enough to be considered nonvolatile. The nonvolatile random access memory (NVRAM) cell comprises a bit line, a charge storage device in silicon carbide, and a transistor in silicon carbide connecting the charge storage device to the bit line. The bipolar NVRAM cell has a bipolar transistor with a base region, an emitter region, and a floating collector region, wherein the charge storage device in the bipolar NVRAM is a p-n junction adjacent the floating collector region of the cell. The metal-oxide-semiconductor (MOS) NVRAM has a MOS field effect transistor (MOSFET) with a channel region, a source region, and a drain region, wherein the charge storage device in the MOS NVRAM is a MOS capacitor adjacent the drain region of the MOSFET.

    摘要翻译： 6H-SiC中的随机存取存储器（RAM）单元具有所有偏移被去除的存储时间，足以被认为是非易失性的。 非易失性随机存取存储器（NVRAM）单元包括位线，碳化硅中的电荷存储装置和将电荷存储装置连接到位线的碳化硅晶体管。 双极NVRAM单元具有双极晶体管，其具有基极区域，发射极区域和浮动集电极区域，其中双极NVRAM中的电荷存储器件是邻近电池的浮置集电极区域的p-n结。 金属氧化物半导体（MOS）NVRAM具有沟道区，源极区和漏极区的MOS场效应晶体管（MOSFET），其中MOS NVRAM中的电荷存储装置是与漏极区相邻的MOS电容 的MOSFET。

    High sensitivity ultraviolet radiation detector
    13.
    发明授权
    High sensitivity ultraviolet radiation detector 失效
    高灵敏度紫外线检测仪

    公开(公告)号：US5093576A

    公开(公告)日：1992-03-03

    申请号：US670534

    申请日：1991-03-15

    申请人： John A. Edmond ,  Calvin H. Carter, Jr.

    发明人： John A. Edmond ,  Calvin H. Carter, Jr.

    IPC分类号： H01L31/10 ,  H01L31/0312 ,  H01L31/103

    CPC分类号： H01L31/0312 ,  H01L31/103

    摘要： A high sensitivity radiation detecting photodiode formed in silicon carbide comprises a monocrystalline silicon carbide substrate; a first monocrystalline portion of silicon carbide upon the substrate and having a first conductivity type; a second monocrystalline portion of silicon carbide adjacent the first portion and having the opposite conductivity type from the first portion; and a p-n junction between the adjacent first and second portions. The photodiode provides a dark current density of no more than about 1.times.10.sup.-9 amps/cm.sup.2 at a reverse bias of -1.0 volts and at temperatures of 170.degree. C. or less.

    摘要翻译： 形成在碳化硅中的高灵敏度辐射检测光电二极管包括单晶碳化硅衬底; 第一单晶部分的碳化硅在衬底上并且具有第一导电类型; 与所述第一部分相邻并且具有与所述第一部分相反的导电类型的碳化硅的第二单晶部分; 以及相邻的第一和第二部分之间的p-n结。 光电二极管在-1.0伏的反向偏压和170℃或更低的温度下提供不超过约1×10 -9安培/ cm 2的暗电流密度。

    Semi-insulating silicon carbide without vanadium domination
    18.
    发明授权
    Semi-insulating silicon carbide without vanadium domination 有权
    半绝缘碳化硅无钒支配

    公开(公告)号：US06218680B1

    公开(公告)日：2001-04-17

    申请号：US09313802

    申请日：1999-05-18

    申请人： Calvin H. Carter, Jr. ,  Mark Brady ,  Valeri F. Tsvetkov

    发明人： Calvin H. Carter, Jr. ,  Mark Brady ,  Valeri F. Tsvetkov

    IPC分类号： H01L310312

    CPC分类号： C30B23/00 ,  C30B29/36 ,  C30B33/00

    摘要： A semi-insulating bulk single crystal of silicon carbide is disclosed that has a resistivity of at least 5000 &OHgr;-cm at room temperature and a concentration of deep level trapping elements that is below the amounts that will affect the resistivity of the crystal, preferably below detectable levels. A method of forming the crystal is also disclosed, along with some resulting devices that take advantage of the microwave frequency capabilities of devices formed using substrates according to the invention.

    摘要翻译： 公开了一种半绝缘体碳化硅单晶，其在室温下的电阻率至少为5000欧姆 - 厘米，深层捕集元素的浓度低于将影响晶体电阻率的量，优选低于 可检测水平。 还公开了形成晶体的方法，以及利用根据本发明的基板形成的器件的微波频率能力的一些所得到的器件。

    System and method for accelerated degradation testing of semiconductor devices
    19.
    发明授权
    System and method for accelerated degradation testing of semiconductor devices 失效
    半导体器件加速退化试验的系统和方法

    公开(公告)号：US5381103A

    公开(公告)日：1995-01-10

    申请号：US959714

    申请日：1992-10-13

    申请人： John A. Edmond ,  Douglas A. Asbury ,  Calvin H. Carter, Jr. ,  Douglas G. Waltz

    发明人： John A. Edmond ,  Douglas A. Asbury ,  Calvin H. Carter, Jr. ,  Douglas G. Waltz

    IPC分类号： G01R31/26 ,  H01L21/66 ,  G01R1/04

    CPC分类号： G01R31/2642 ,  G01R31/2635

    摘要： A method of testing a semiconductor device, having the steps of pulsing the semiconductor device with a predetermined level of current for a duration of time so as to cause inadequate parts to degrade and to cause adequate parts to stabilize, and measuring predetermined electrical or optical performance characteristics for the semiconductor device after the current pulse. A system for testing a semiconductor device on a wafer is also provided having a contact probe for applying current pulses to the semiconductor device on the wafer, measuring means electrically connected to the probe for measuring predetermined electrical or optical performance characteristics of the semiconductor device on the wafer, and optical detection means electrically connected to the measuring means for detecting radiation emitted from the semiconductor device on the wafer.

    摘要翻译： 一种测试半导体器件的方法，该方法具有如下步骤：使半导体器件以预定电流电流脉冲持续一段时间，从而导致不适当的部件劣化并导致足够的部件稳定，以及测量预定的电或光学性能 电流脉冲后半导体器件的特性。 还提供了一种用于在晶片上测试半导体器件的系统，其具有用于向晶片上的半导体器件施加电流脉冲的接触探针，电连接到探针的测量装置，用于测量半导体器件上的预定的电或光学性能特性 晶片和光学检测装置，电连接到测量装置，用于检测从晶片上的半导体器件发射的辐射。