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    Avalanche Photodiode Device with a Curved Absorption Region
    11.
    发明申请
    Avalanche Photodiode Device with a Curved Absorption Region 有权

    公开(公告)号：US20220013680A1

    公开(公告)日：2022-01-13

    申请号：US17373084

    申请日：2021-07-12

    Applicant: IMEC VZW

    Inventor： Ashwyn Srinivasan ,  Maria Ioanna Pantouvaki ,  Joris Van Campenhout

    IPC: H01L31/107 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/18

    Abstract: An avalanche photodiode (APD) device, in particular, a lateral separate absorption charge multiplication (SACM) APD device, and a method for its fabrication is provided. The APD device comprises a first contact region and a second contact region formed in a semiconductor layer. Further, the APD device comprises an absorption region formed on the semiconductor layer, wherein the absorption region is at least partly formed on a first region of the semiconductor layer, wherein the first region is arranged between the first contact region and the second contact region. The APD device further includes a charge region formed in the semiconductor layer between the first region and the second contact region, and an amplification region formed in the semiconductor layer between the charge region and the second contact region. At least the absorption region is curved on the semiconductor layer.

    Multimode Interference Based VPIN Diode Waveguides
    12.
    发明申请
    Multimode Interference Based VPIN Diode Waveguides 审中-公开

    公开(公告)号：US20190196296A1

    公开(公告)日：2019-06-27

    申请号：US16223757

    申请日：2018-12-18

    Applicant: IMEC VZW ,  Universiteit Gent

    Inventor： Ashwyn Srinivasan ,  Joris Van Campenhout

    IPC: G02F1/225 ,  H01L31/105 ,  G02F1/017 ,  H01L31/028

    CPC classification number: G02F1/2257 ,  G02F1/01708 ,  G02F2001/0157 ,  G02F2001/217 ,  G02F2202/105 ,  G02F2202/108 ,  G02F2203/48 ,  H01L31/028 ,  H01L31/105 ,  H01S5/50

    Abstract: Example embodiments relate to an electro-optical device that includes a vertical p-i-n diode waveguide. The electro-optical device includes a waveguide portion adapted for propagating a multimode wave, the waveguide portion including an intrinsic semiconductor region of the vertical p-i-n diode, a first contact and a second contact for electrically contacting a first electrode and a second electrode of the vertical p-i-n diode. The device also includes an input section for coupling radiation into the waveguide portion and an output section for coupling radiation out of the waveguide portion. The input section, the output section, and the waveguide portion are configured to support a multimode interference pattern for the multimode wave with an optical field with a lateral inhomogeneous spatial distribution in the waveguide portion including regions with higher optical field intensity and regions with lower optical field intensity. The second contact physically contacts the second electrode.

    Avalanche photodetector element
    15.
    发明授权
    Avalanche photodetector element 有权
    雪崩光电探测元件

    公开(公告)号：US09159860B2

    公开(公告)日：2015-10-13

    申请号：US14087983

    申请日：2013-11-22

    Applicant: IMEC

    Inventor： Geert Hellings ,  Joris Van Campenhout ,  Peter Verheyen

    IPC: H01L31/0232 ,  H01L31/107 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/0352

    CPC classification number: H01L31/107 ,  H01L31/022408 ,  H01L31/028 ,  H01L31/03529 ,  Y02E10/547

    Abstract: An avalanche photodetector element is disclosed for converting an optical signal to an electrical signal, comprising an input waveguide and a photodetector region, the photodetector region comprising at least one intrinsic region, at least one p-doped region and at least one n-doped region, the doped regions and the at least one intrinsic region forming at least one PIN-junction avalanche photodiode, the input waveguide and the photodetector region being arranged with respect to each other such that the optical signal conducted by the input waveguide is substantially conducted into the photodetector region to the PIN-junction avalanche photodiode, the PIN-junction avalanche photodiode converting the optical signal to an electrical signal, characterized in that the photodetector region comprises more than one p-doped region and/or n-doped region, whereby these p-doped regions and/or n-doped regions are physically arranged as an array.

    Abstract translation: 公开了一种用于将光信号转换成电信号的雪崩光电检测器元件，其包括输入波导和光电检测器区域，所述光电检测器区域包括至少一个本征区域，至少一个p掺杂区域和至少一个n掺杂区域 ，掺杂区域和至少一个本征区域形成至少一个PIN结雪崩光电二极管，输入波导和光电检测器区域相对于彼此布置，使得由输入波导传导的光信号基本上进入 光电检测器区域到PIN结雪崩光电二极管，PIN结雪崩光电二极管将光信号转换为电信号，其特征在于光电检测器区域包括多于一个p掺杂区域和/或n掺杂区域，由此这些p 掺杂区域和/或n掺杂区域物理地排列成阵列。

    Avalanche photodiode device with a curved absorption region
    17.
    发明授权
    Avalanche photodiode device with a curved absorption region 有权

    公开(公告)号：US11600734B2

    公开(公告)日：2023-03-07

    申请号：US17373084

    申请日：2021-07-12

    Applicant: IMEC VZW

    Inventor： Ashwyn Srinivasan ,  Maria Ioanna Pantouvaki ,  Joris Van Campenhout

    IPC: H01L31/107 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/18

    Abstract: An avalanche photodiode (APD) device, in particular, a lateral separate absorption charge multiplication (SACM) APD device, and a method for its fabrication is provided. The APD device comprises a first contact region and a second contact region formed in a semiconductor layer. Further, the APD device comprises an absorption region formed on the semiconductor layer, wherein the absorption region is at least partly formed on a first region of the semiconductor layer, wherein the first region is arranged between the first contact region and the second contact region. The APD device further includes a charge region formed in the semiconductor layer between the first region and the second contact region, and an amplification region formed in the semiconductor layer between the charge region and the second contact region. At least the absorption region is curved on the semiconductor layer.

    Method for Fabricating an Avalanche Photodiode Device
    18.
    发明申请
    Method for Fabricating an Avalanche Photodiode Device 有权

    公开(公告)号：US20220013682A1

    公开(公告)日：2022-01-13

    申请号：US17370578

    申请日：2021-07-08

    Applicant: IMEC VZW

    Inventor： Ashwyn Srinivasan ,  Peter Verheyen ,  Philippe Absil ,  Joris Van Campenhout

    IPC: H01L31/107 ,  H01L31/18

    Abstract: A method is provided for fabricating an avalanche photodiode (APD) device, in particular, a separate absorption charge multiplication (SACM) APD device. The method includes forming a first contact region and a second contact region in a semiconductor layer. Further, the method includes forming a first mask layer above at least a first contact region of the semiconductor layer adjacent to the first contact region, and forming a second mask layer above and laterally overlapping the first mask layer. Thereby, a mask window is defined by the first mask layer and the second mask layer, and the first mask layer and/or the second mask layer are formed above a second contact region of the semiconductor layer adjacent to the second contact region. Further, the method includes forming a charge region in the semiconductor layer through the mask window, wherein the charge region is formed between the first contact region and the second contact region, and comprises forming an absorption region on the first contact region using the first mask layer. An APD fabricated by the disclosed method is also provided.

    III-V semiconductor waveguide nanoridge structure
    19.
    发明授权
    III-V semiconductor waveguide nanoridge structure 有权

    公开(公告)号：US10690852B2

    公开(公告)日：2020-06-23

    申请号：US16228486

    申请日：2018-12-20

    Applicant: IMEC vzw

    Inventor： Joris Van Campenhout ,  Ashwyn Srinivasan ,  Bernardette Kunert ,  Maria Ioanna Pantouvaki

    IPC: G02B6/13 ,  G02F1/025 ,  G02B6/12 ,  G02F1/017

    Abstract: A III-V semiconductor waveguide nanoridge structure having a narrow supporting base with a freestanding wider body portion on top, is disclosed. In one aspect, the III-V waveguide includes a PIN diode. The waveguide comprises a III-V semiconductor waveguide core formed in the freestanding wider body portion; at least one heterojunction incorporated in the III-V semiconductor waveguide core; a bottom doped region of a first polarity positioned at a bottom of the narrow supporting base, forming a lower contact; and an upper doped region of a second polarity, forming an upper contact. The upper contact is positioned in at least one side wall of the freestanding wider body portion.

    Active-Passive Waveguide Photonic System
    20.
    发明申请
    Active-Passive Waveguide Photonic System 审中-公开

    公开(公告)号：US20190101711A1

    公开(公告)日：2019-04-04

    申请号：US16150898

    申请日：2018-10-03

    Applicant: IMEC VZW ,  Universiteit Gent

    Inventor： Joris Van Campenhout ,  Bernardette Kunert ,  Maria Ioanna Pantouvaki ,  Dries Van Thourhout ,  Shi Yuting

    IPC: G02B6/42 ,  G02B6/13

    Abstract: Example embodiments relate to active-passive waveguide photonic systems. An example embodiment includes a monolithic integrated active/passive waveguide photonic system. The system includes a substrate having positioned thereon at least one active waveguide and at least one passive waveguide. The at least one active waveguide and the at least one passive waveguide are monolithically integrated and are arranged for evanescent wave coupling between the waveguides. The at least one active waveguide and the at least one passive waveguide are positioned so that at least a portion of each waveguide does not overlap the other waveguide, both in a height direction and in a lateral direction with respect to the substrate.

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