公开(公告)号：US10195704B2

公开(公告)日：2019-02-05

申请号：US13833616

申请日：2013-03-15

Applicant: Infineon Technologies AG

Inventor： Christian Himmelsbach ,  Joachim Hirschler ,  Helmut Brunner

IPC: B23Q7/00 ,  H01L21/687

Abstract: Lift pins and devices having lift pins are provided. According to an aspect, a lift pin may have a tapered distal portion. According to another aspect, a lift pin may have two portions threadedly engaged with each other. According to yet another aspect, a lift pin may be mounted to a lifting plate with slackness.

公开(公告)号：US09614045B2

公开(公告)日：2017-04-04

申请号：US14488334

申请日：2014-09-17

Applicant: Infineon Technologies AG

Inventor： Srinivasa Reddy Yeduru ,  Joachim Hirschler ,  Harald Wiedenhofer ,  Franz Kleinbichler

IPC: H01L29/41 ,  H01L21/02 ,  H01L21/3105

CPC classification number: H01L29/41 ,  H01L21/02063 ,  H01L21/02068 ,  H01L21/31058 ,  H01L21/4853 ,  H01L23/49811

Abstract: In various embodiments, a method of processing a semiconductor device may include providing a semiconductor device comprising a contact pad and a polymer layer; and subjecting at least a part of the contact pad and the polymer layer to a plasma comprising ammonia.

公开(公告)号：US09135893B2

公开(公告)日：2015-09-15

申请号：US13903872

申请日：2013-05-28

Applicant: Infineon Technologies AG

Inventor： Joachim Hirschler ,  Johann Schmid

IPC: G09G5/391

CPC classification number: G09G3/2007 ,  G02B27/026 ,  G06F3/013 ,  G09G3/003 ,  G09G5/391 ,  G09G2354/00

Abstract: A display device is provided. The display device comprises a display comprising a plurality of pixels arranged in a display plane. The display device is configured to determine a virtual plane at which a long-sighted user of the display device who is looking at the display sees sharp. Further, the display device is configured to determine a first contiguous group of pixels of the display which are located within a first optical path from a first virtual pixel of the virtual plane to an eye of the long-sighted user, and to determine a second contiguous group of pixels of the display which are located within a second optical path from a second virtual pixel of the virtual plane to the eye of the long-sighted user.

Abstract translation: 提供显示装置。 显示装置包括显示器，其包括布置在显示平面中的多个像素。 显示装置被配置为确定正在看待显示器的显示装置的长视用户看起来很明显的虚拟平面。 此外，显示设备被配置为确定显示器的位于从虚拟平面的第一虚拟像素到远视用户的眼睛的第一光路内的第一连续的像素组，并且确定第二 显示器的连续的像素组位于从虚拟平面的第二虚拟像素到远视用户的眼睛的第二光路内。

公开(公告)号：US20140354714A1

公开(公告)日：2014-12-04

申请号：US13903872

申请日：2013-05-28

Applicant: Infineon Technologies AG

Inventor： Joachim Hirschler ,  Johann Schmid

IPC: G09G5/391

CPC classification number: G09G3/2007 ,  G02B27/026 ,  G06F3/013 ,  G09G3/003 ,  G09G5/391 ,  G09G2354/00

Abstract: A display device is provided. The display device comprises a display comprising a plurality of pixels arranged in a display plane. The display device is configured to determine a virtual plane at which a long-sighted user of the display device who is looking at the display sees sharp. Further, the display device is configured to determine a first contiguous group of pixels of the display which are located within a first optical path from a first virtual pixel of the virtual plane to an eye of the long-sighted user, and to determine a second contiguous group of pixels of the display which are located within a second optical path from a second virtual pixel of the virtual plane to the eye of the long-sighted user.

Abstract translation: 提供显示装置。 显示装置包括显示器，其包括布置在显示平面中的多个像素。 显示装置被配置为确定正在看待显示器的显示装置的长视用户看起来很明显的虚拟平面。 此外，显示设备被配置为确定显示器的位于从虚拟平面的第一虚拟像素到远视用户的眼睛的第一光路内的第一连续的像素组，并且确定第二 显示器的连续的像素组位于从虚拟平面的第二虚拟像素到远视用户的眼睛的第二光路内。

公开(公告)号：US20140145345A1

公开(公告)日：2014-05-29

申请号：US13685748

申请日：2012-11-27

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Helmut Brunner ,  Joachim Hirschler

IPC: H01L23/538 ,  H01L21/48

CPC classification number: H01L21/486 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming a semiconductor structure in accordance with various embodiments may include: forming at least one opening in a workpiece; forming a first conductive layer within the at least one opening, the first conductive layer not completely filling the at least one opening; forming a fill layer over the first conductive layer within the at least one opening; and forming a second conductive layer over the fill layer.

Abstract translation: 根据各种实施例的形成半导体结构的方法可以包括：在工件中形成至少一个开口; 在所述至少一个开口内形成第一导电层，所述第一导电层不完全填充所述至少一个开口; 在所述至少一个开口内的所述第一导电层上形成填充层; 以及在所述填充层上形成第二导电层。

公开(公告)号：US20140106229A1

公开(公告)日：2014-04-17

申请号：US13653493

申请日：2012-10-17

Applicant: INFINEON TECHNOLOGIES AG

Inventor： Joachim Hirschler ,  Magdalena Forster ,  Michael Sorger ,  Katharina Schmut ,  Bernhard Goller ,  Philemon Schweizer ,  Michael Sternad ,  Thomas Walter

IPC: H01M4/38 ,  H01M4/583 ,  H01M4/04 ,  H01M4/02

CPC classification number: H01M4/04 ,  H01M4/13 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/386 ,  H01M10/052 ,  H01M10/054 ,  H01M2004/021

Abstract: A battery electrode in accordance with various embodiments may include: a substrate including a surface configured to face an ion-carrying electrolyte; and a first diffusivity changing region at a first portion of the surface, wherein the first diffusivity changing region is configured to change diffusion of ions carried by the electrolyte into the substrate, and wherein a second portion of the surface is free from the first diffusivity changing region.

Abstract translation: 根据各种实施例的电池电极可以包括：基板，其包括被配置为面向离子载体电解质的表面; 以及在所述表面的第一部分处的第一扩散变化区域，其中所述第一扩散变化区域被配置为改变由所述电解质携带的离子的扩散到所述衬底中，并且其中所述表面的第二部分没有所述第一扩散率变化 地区。

公开(公告)号：US12183696B2

公开(公告)日：2024-12-31

申请号：US18235585

申请日：2023-08-18

Applicant: Infineon Technologies AG

Inventor： Evelyn Napetschnig ,  Jens Brandenburg ,  Christoffer Erbert ,  Joachim Hirschler ,  Oliver Humbel ,  Thomas Rupp ,  Carsten Schaeffer ,  Julia Zischang

IPC: H01L23/48 ,  H01L23/00 ,  H01L23/485 ,  H01L23/52 ,  H01L23/532

Abstract: A method of manufacturing a semiconductor device includes forming a wiring metal layer structure; forming a dielectric layer structure arranged directly on the wiring metal layer structure; and forming a bonding pad metal layer structure arranged, at least partially, directly on the dielectric layer structure, wherein a layer thickness of the dielectric layer structure ranges from 1% to 30% of a layer thickness of the wiring metal layer structure, wherein the wiring metal layer structure and the bonding pad metal structure are electrically connected through openings in the dielectric layer structure.

公开(公告)号：US11764176B2

公开(公告)日：2023-09-19

申请号：US17400303

申请日：2021-08-12

Applicant: Infineon Technologies AG

Inventor： Evelyn Napetschnig ,  Jens Brandenburg ,  Christoffer Erbert ,  Joachim Hirschler ,  Oliver Humbel ,  Thomas Rupp ,  Carsten Schaeffer ,  Julia Zischang

IPC: H01L23/48 ,  H01L23/52 ,  H01L23/00 ,  H01L23/485 ,  H01L23/532

CPC classification number: H01L24/05 ,  H01L23/485 ,  H01L23/53219 ,  H01L23/53233

Abstract: A semiconductor device is proposed. The semiconductor device includes a wiring metal layer structure. The semiconductor device further includes a dielectric layer structure arranged directly on the wiring metal layer structure. The semiconductor device further includes a bonding pad metal layer structure arranged, at least partly, directly on the dielectric layer structure. A layer thickness of the dielectric layer structure ranges from 1% to 30% of a layer thickness of the wiring metal layer structure. The wiring metal layer structure and the bonding pad metal structure are electrically connected through openings in the dielectric layer structure.

公开(公告)号：US10170746B2

公开(公告)日：2019-01-01

申请号：US13653493

申请日：2012-10-17

Applicant: Infineon Technologies AG

Inventor： Joachim Hirschler ,  Magdalena Forster ,  Michael Sorger ,  Katharina Schmut ,  Bernhard Goller ,  Philemon Schweizer ,  Michael Sternad ,  Thomas Walter

IPC: H01M4/13 ,  H01M4/134 ,  H01M4/04 ,  H01M4/1395 ,  H01M4/38 ,  H01M10/052 ,  H01M10/054 ,  H01M4/02

Abstract: A battery electrode in accordance with various embodiments may include: a substrate including a surface configured to face an ion-carrying electrolyte; and a first diffusivity changing region at a first portion of the surface, wherein the first diffusivity changing region is configured to change diffusion of ions carried by the electrolyte into the substrate, and wherein a second portion of the surface is free from the first diffusivity changing region.

公开(公告)号：US09455192B2

公开(公告)日：2016-09-27

申请号：US14226666

申请日：2014-03-26

Applicant: Infineon Technologies AG

Inventor： Michael Roesner ,  Manfred Engelhardt ,  Johann Schmid ,  Gudrun Stranzl ,  Joachim Hirschler

IPC: H01L21/46 ,  H01L21/78 ,  H01L21/768 ,  H01L23/00 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L21/7806 ,  H01L21/02057 ,  H01L21/31133 ,  H01L21/31138 ,  H01L21/76879 ,  H01L21/76898 ,  H01L21/78 ,  H01L24/32 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2924/10157 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/00

Abstract: In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes attaching a substrate to a carrier using an adhesive component and forming a through trench through the substrate to expose the adhesive component. At least a portion of the adhesive component is etched and a metal layer is formed over sidewalls of the through trench.

Abstract translation: 根据本发明的实施例，一种形成半导体器件的方法包括：使用粘合剂组件将衬底附着到载体上，并通过衬底形成通孔以暴露粘合剂组分。 蚀刻粘合剂组分的至少一部分，并且在通孔的侧壁上形成金属层。