公开(公告)号：US20190386205A1

公开(公告)日：2019-12-19

申请号：US16012672

申请日：2018-06-19

Applicant: Intel Corporation

Inventor： Tanay Gosavi ,  Sasikanth Manipatruni ,  Kaan Oguz ,  Noriyuki Sato ,  Kevin O'Brien ,  Benjamin Buford ,  Christopher Wiegand ,  Angeline Smith ,  Tofizur Rahman ,  Ian Young

IPC: H01L43/04 ,  H01L43/10 ,  H01L43/08 ,  H01F10/32 ,  G11C11/16 ,  G11C11/18

Abstract: An apparatus is provided which comprises: a magnetic junction including: a first structure comprising a magnet with an unfixed perpendicular magnetic anisotropy (PMA) relative to an x-y plane of a device; a second structure comprising one of a dielectric or metal; a third structure comprising a magnet with fixed PMA, wherein the third structure has an anisotropy axis perpendicular to the plane of the device, and wherein the third structure is adjacent to the second structure such that the second structure is between the first and third structures; a fourth structure comprising an antiferromagnetic (AFM) material, the fourth structure adjacent to the third structure; a fifth structure comprising a magnet with PMA, the fifth structure adjacent to the fourth structure; and an interconnect adjacent to the first structure, the interconnect comprising spin orbit material.

公开(公告)号：US11737368B2

公开(公告)日：2023-08-22

申请号：US16367136

申请日：2019-03-27

Applicant: Intel Corporation

Inventor： Daniel Ouellette ,  Christopher Wiegand ,  Justin Brockman ,  Tofizur Rahman ,  Oleg Golonzka ,  Angeline Smith ,  Andrew Smith ,  James Pellegren ,  Michael Robinson ,  Huiying Liu

IPC: H10N50/01 ,  H10N50/10 ,  H10B61/00 ,  H10N50/80 ,  H10N50/85

CPC classification number: H10N50/01 ,  H10B61/22 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

Abstract: A memory device includes a first electrode, a conductive layer including iridium above the first electrode and a magnetic junction directly on the conductive layer. The magnetic junction further includes a pinning structure above the conductive layer, a fixed magnet above the pinning structure, a tunnel barrier on the fixed magnet, a free magnet on the tunnel barrier layer and a second electrode above the free magnet. The conductive layer including iridium and the pinning structure including iridium provide switching efficiency.

公开(公告)号：US11557629B2

公开(公告)日：2023-01-17

申请号：US16367133

申请日：2019-03-27

Applicant: Intel Corporation

Inventor： Kaan Oguz ,  Christopher Wiegand ,  Noriyuki Sato ,  Angeline Smith ,  Tanay Gosavi

IPC: H01L27/22 ,  H01L43/14 ,  H01L43/10 ,  H01L43/06 ,  H01L43/08 ,  H01L43/04

Abstract: A spin orbit memory device includes a material layer stack on a spin orbit electrode. The material layer stack includes a magnetic tunnel junction (MTJ) and a synthetic antiferromagnetic (SAF) structure on the MTJ. The SAF structure includes a first magnet structure and a second magnet structure separated by an antiferromagnetic coupling layer. The first magnet structure includes a first magnet and a second magnet separated by a single layer of a non-magnetic material such as platinum. The second magnet structure includes a stack of bilayers, where each bilayer includes a layer of platinum on a layer of a magnetic material such.

公开(公告)号：US11437567B2

公开(公告)日：2022-09-06

申请号：US16348364

申请日：2016-12-28

Applicant: Intel Corporation

Inventor： Justin Brockman ,  Christopher Wiegand ,  MD Tofizur Rahman ,  Daniel Ouelette ,  Angeline Smith ,  Juan Alzate Vinasco ,  Charles Kuo ,  Mark Doczy ,  Kaan Oguz ,  Kevin O'Brien ,  Brian Doyle ,  Oleg Golonzka ,  Tahir Ghani

IPC: H01L43/02 ,  G11C11/16 ,  H01F10/32 ,  H01F41/30 ,  H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  H01L43/10

Abstract: An apparatus comprises a magnetic tunnel junction (MTJ) including a free magnetic layer, a fixed magnetic layer, and a tunnel barrier between the free and fixed layers, the tunnel barrier directly contacting a first side of the free layer, a capping layer contacting the second side of the free magnetic layer and boron absorption layer positioned a fixed distance above the capping layer.

公开(公告)号：US11362263B2

公开(公告)日：2022-06-14

申请号：US16024411

申请日：2018-06-29

Applicant: Intel Corporation

Inventor： Noriyuki Sato ,  Tanay Gosavi ,  Justin Brockman ,  Sasikanth Manipatruni ,  Kaan Oguz ,  Kevin O'Brien ,  Christopher Wiegand ,  Angeline Smith ,  Tofizur Rahman ,  Ian Young

IPC: H01L43/02 ,  G11C11/16 ,  H01L43/12 ,  H01L43/10 ,  B82Y25/00

Abstract: A perpendicular spin orbit torque (SOT) memory device includes an electrode having a spin orbit coupling material and a magnetic tunnel junction (MTJ) device on a portion of the electrode. The electrode has a first SOC layer and a second SOC layer on a portion of the first SOC layer, where at least a portion of the first SOC layer at an interface with the second SOC layer includes oxygen.

公开(公告)号：US11063088B2

公开(公告)日：2021-07-13

申请号：US16706470

申请日：2019-12-06

Applicant: Intel Corporation

Inventor： Daniel Ouellette ,  Christopher Wiegand ,  Justin Brockman ,  Tofizur Rahman ,  Oleg Golonzka ,  Angeline Smith ,  Andrew Smith ,  James Pellegren ,  Aaron Littlejohn ,  Juan G. Alzate-Vinasco ,  Yu-Jin Chen ,  Tanmoy Pramanik

IPC: H01L27/22 ,  H01L43/02 ,  G11C11/16 ,  H01L43/10 ,  H01F10/32 ,  H01F41/32 ,  H01L43/12

Abstract: A memory device includes a first electrode, a second electrode and a magnetic tunnel junction (MTJ) between the first electrode and the second electrode. The MTJ includes a fixed magnet, a free magnet and a tunnel barrier between the fixed magnet and the free magnet. The MTJ further includes a conductive layer between the free magnet and the second electrode, the conductive layer having a metallic dopant, where the metallic dopant has a concentration that increase with distance from an interface between the free magnet and the conductive layer. A capping layer is between the conductive layer and the second electrode.

公开(公告)号：US20210175284A1

公开(公告)日：2021-06-10

申请号：US16706470

申请日：2019-12-06

Applicant: Intel Corporation

Inventor： Daniel Ouellette ,  Christopher Wiegand ,  Justin Brockman ,  Tofizur Rahman ,  Oleg Golonzka ,  Angeline Smith ,  Andrew Smith ,  James Pellegren ,  Aaron Littlejohn ,  Juan G. Alzate-Vinasco ,  Yu-Jin Chen ,  Tanmoy Pramanik

IPC: H01L27/22 ,  H01L43/02 ,  G11C11/16 ,  H01L43/10 ,  H01L43/12 ,  H01F41/32 ,  H01F10/32

Abstract: A memory device includes a first electrode, a second electrode and a magnetic tunnel junction (MTJ) between the first electrode and the second electrode. The MTJ includes a fixed magnet, a free magnet and a tunnel barrier between the fixed magnet and the free magnet. The MTJ further includes a conductive layer between the free magnet and the second electrode, the conductive layer having a metallic dopant, where the metallic dopant has a concentration that increase with distance from an interface between the free magnet and the conductive layer. A capping layer is between the conductive layer and the second electrode.

公开(公告)号：US20200006630A1

公开(公告)日：2020-01-02

申请号：US16024393

申请日：2018-06-29

Applicant: Intel Corporation

Inventor： Noriyuki Sato ,  Tanay Gosavi ,  Gary Allen ,  Sasikanth Manipatruni ,  Kaan Oguz ,  Kevin O'Brien ,  Christopher Wiegand ,  Angeline Smith ,  Tofizur Rahman ,  Ian Young ,  Ben Buford

IPC: H01L43/02 ,  H01L43/12 ,  H01L27/22 ,  G11C11/16 ,  H01F10/32

Abstract: A spin orbit torque (SOT) memory device includes a SOT electrode having a spin orbit coupling material. The SOT electrode has a first sidewall and a second sidewall opposite to the first sidewall. The SOT memory device further includes a magnetic tunnel junction device on a portion of the SOT electrode. A first MTJ sidewall intersects the first SOT sidewall and a portion of the first MTJ sidewall and the SOT sidewall has a continuous first slope. The MTJ device has a second sidewall that does not extend beyond the second SOT sidewall and at least a portion of the second MTJ sidewall has a second slope.

公开(公告)号：US20190386209A1

公开(公告)日：2019-12-19

申请号：US16009776

申请日：2018-06-15

Applicant: Intel Corporation

Inventor： Angeline Smith ,  Justin Brockman ,  Tofizur Rahman ,  Daniel Ouellette ,  Andrew Smith ,  Juan Alzate Vinasco ,  James ODonnell ,  Christopher Wiegand ,  Oleg Golonzka

IPC: H01L43/10 ,  H01L43/08 ,  H01L43/02 ,  H01L43/12

Abstract: Material stacks for perpendicular spin transfer torque memory (pSTTM) devices, pSTTM devices and computing platforms employing such material stacks, and methods for forming them are discussed. The material stacks include a cladding layer of predominantly tungsten on a protective layer, which is in turn on an oxide capping layer over a magnetic junction stack. The cladding layer reduces oxygen dissociation from the oxide capping layer for improved thermal stability and retention.

公开(公告)号：US11818963B2

公开(公告)日：2023-11-14

申请号：US17578093

申请日：2022-01-18

Applicant: Intel Corporation

Inventor： Sasikanth Manipatruni ,  Kaan Oguz ,  Chia-Ching Lin ,  Christopher Wiegand ,  Tanay Gosavi ,  Ian Young

IPC: H10N50/80 ,  H01F10/32 ,  G11C11/16 ,  H10B61/00 ,  H10N50/85

CPC classification number: H10N50/80 ,  G11C11/161 ,  H01F10/329 ,  H01F10/3268 ,  H01F10/3286 ,  H10B61/22 ,  H10N50/85

Abstract: An apparatus is provided which comprises: a magnetic junction including: a stack of structures including: a first structure comprising a magnet with an unfixed perpendicular magnetic anisotropy (PMA) relative to an x-y plane of a device, wherein the first structure has a first dimension along the x-y plane and a second dimension in the z-plane, wherein the second dimension is substantially greater than the first dimension. The magnetic junction includes a second structure comprising one of a dielectric or metal; and a third structure comprising a magnet with fixed PMA, wherein the third structure has an anisotropy axis perpendicular to the plane of the device, and wherein the third structure is adjacent to the second structure such that the second structure is between the first and third structures; and an interconnect adjacent to the third structure, wherein the interconnect comprises a spin orbit material.