公开(公告)号：US20190115528A1

公开(公告)日：2019-04-18

申请号：US16230420

申请日：2018-12-21

Applicant: International Business Machines Corporation

Inventor： Anthony J. Annunziata ,  Chandrasekharan Kothandaraman ,  Nathan P. Marchack ,  Hiroyuki Miyazoe

IPC: H01L43/12 ,  H01L43/08 ,  H01F10/13

Abstract: Methods for forming magnetic tunnel junctions and structures thereof include cryogenic etching the layers defining the magnetic tunnel junction without lateral diffusion of reactive species.

公开(公告)号：US20190101504A1

公开(公告)日：2019-04-04

申请号：US15802802

申请日：2017-11-03

Applicant: International Business Machines Corporation

Inventor： Hariklia Deligianni ,  Bruce B. Doris ,  Damon B. Farmer ,  Steven J. Holmes ,  Qinghuang Lin ,  Nathan P. Marchack ,  Deborah A. Neumayer ,  Roy R. Yu

IPC: G01N27/327 ,  H01L21/768 ,  G01N33/94 ,  G01N27/48

Abstract: Embodiments of the invention are directed to a biosensing integrated circuit (IC). A non-limiting example of the biosensing IC includes a plurality of semiconductor substrate layers. A sensor element is formed over a first one of the plurality of semiconductor substrate layers, wherein the sensor element is configured to, based at least in part on the sensor element interacting with a predetermined material, generate data representing a measurable electrical parameter. An adhesion enhancement region is configured to physically couple the sensor element to the first one of the plurality of semiconductor substrate layers. In some embodiments of the invention, the biosensing IC further includes an electrically conductive interconnect network configured to communicatively couple the data representing the measurable electrical parameter to computer elements.

公开(公告)号：US20190101503A1

公开(公告)日：2019-04-04

申请号：US15720986

申请日：2017-09-29

Applicant: International Business Machines Corporation

Inventor： Hariklia Deligianni ,  Bruce B. Doris ,  Damon B. Farmer ,  Steven J. Holmes ,  Qinghuang Lin ,  Nathan P. Marchack ,  Deborah A. Neumayer ,  Roy R. Yu

IPC: G01N27/327 ,  H01L23/528 ,  H01L23/48 ,  H01L21/768 ,  G01N27/48 ,  G01N33/94

CPC classification number: G01N27/3277 ,  G01N27/3278 ,  G01N27/48 ,  G01N33/48728 ,  G01N33/5438 ,  G01N33/9413 ,  H01L21/76877 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/528 ,  H01L27/153

Abstract: Embodiments of the invention are directed to a biosensing integrated circuit (IC). A non-limiting example of the biosensing IC includes a plurality of semiconductor substrate layers. A sensor element is formed over a first one of the plurality of semiconductor substrate layers, wherein the sensor element is configured to, based at hleast in part on the sensor element interacting with a predetermined material, generate data representing a measureable electrical parameter. An adhesion enhancement region is configured to physically couple the sensor element to the first one of the plurality of semiconductor substrate layers. In some embodiments of the invention, the biosensing IC further includes an electrically conductive interconnect network configured to communicatively couple the data representing the measureable electrical parameter to computer elements.

公开(公告)号：US20180254411A1

公开(公告)日：2018-09-06

申请号：US15961221

申请日：2018-04-24

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Michael F. Lofaro ,  Nathan P. Marchack ,  Janusz J. Nowak ,  Eugene J. O'Sullivan

IPC: H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  H01L43/02

CPC classification number: H01L43/12 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

Abstract: A method is presented for establishing a top contact to a magnetic tunnel junction (MTJ) device, the method including selectively etching, via a first etching process, an oxide layer to expose a top surface of a nitride layer of a dummy fill shape and selectively etching, via a second etching process, a top portion of the nitride layer of the dummy fill shape to expose a top surface thereof. The method further includes selectively etching, via the second etching process, the oxide layer to expose a top surface of a nitride layer of the MTJ device, and selectively etching, via the first etching process, a top portion of the nitride layer of the MTJ device to expose a top surface thereof such that a height of the MTJ device is approximately equal to a height of the dummy fill shape.

公开(公告)号：US20170244024A1

公开(公告)日：2017-08-24

申请号：US15590545

申请日：2017-05-09

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION

Inventor： Anthony J. Annunziata ,  Armand A. Galan ,  Steve Holmes ,  Eric A. Joseph ,  Gen P. Lauer ,  Qinghuang Lin ,  Nathan P. Marchack

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/08

CPC classification number: H01L43/12 ,  G03F7/70325 ,  G03F7/70425 ,  G11C11/161 ,  G11C2211/5615 ,  H01L27/222 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A method of forming a pillar includes masking a photoresist material using a reticle and a developer having a polarity opposite that of the photoresist to provide an island of photoresist material. A layer under the island of photoresist material is etched to establish a pillar defined by the island of photoresist material.

公开(公告)号：US09728717B2

公开(公告)日：2017-08-08

申请号：US14742382

申请日：2015-06-17

Applicant: International Business Machines Corporation

Inventor： Anthony J. Annunziata ,  Rohit Kilaru ,  Nathan P. Marchack ,  Hiroyuki Miyazoe

IPC: H01L29/82 ,  H01L43/12

CPC classification number: H01L43/12

Abstract: A method of magnetic tunnel junction patterning for magnetoresistive random access memory devices using low atomic weight ion sputtering. The method includes: providing a magnetoresistive random access memory device including a hard mask metal, a MTJ element, and a semiconductor substrate, wherein the hard mask metal is disposed on the MTJ element and, wherein the MTJ element is disposed on the semiconductor substrate; and etching back the MTJ element into a plurality of MTJ element pillars using a low atomic weight ion sputtering. A magnetoresistive random access memory device using low atomic weight ion sputtering. The device includes: a semiconductor substrate; a plurality of MTJ element pillars disposed on the semiconductor substrate, wherein the plurality of MTJ element pillars is etched from a MTJ element using a low atomic weight ion sputtering; and a hard mask metal disposed on the MTJ element pillars.

公开(公告)号：US20170179194A1

公开(公告)日：2017-06-22

申请号：US14976339

申请日：2015-12-21

Applicant: International Business Machines Corporation ,  Tokyo Electron Limited

Inventor： Anthony J. Annunziata ,  Sebastian U. Engelmann ,  Eric A. Joseph ,  Gen P. Lauer ,  Nathan P. Marchack ,  Deborah A. Neumayer ,  Masahiro Yamazaki

IPC: H01L27/22 ,  H01L43/08 ,  H01L43/12 ,  H01L43/02

CPC classification number: H01L43/12 ,  H01L27/222 ,  H01L43/02 ,  H01L43/08

Abstract: A method of making a magnetic random access memory device comprises forming a magnetic tunnel junction on an electrode, the magnetic tunnel junction comprising a reference layer positioned in contact with the electrode, a tunnel barrier layer arranged on the reference layer, and a free layer arranged on the tunnel barrier layer; and depositing an encapsulating layer on and along sidewalls of the magnetic tunnel junction at a temperature of 40 to 60° C. using remote microwave plasma deposition wherein the encapsulation layer comprises silicon and nitrogen. An MRAM device made by the aforementioned method is also disclosed.

公开(公告)号：US11411175B2

公开(公告)日：2022-08-09

申请号：US16866989

申请日：2020-05-05

Applicant: International Business Machines Corporation

Inventor： Anthony J. Annunziata ,  Chandrasekara Kothandaraman ,  Nathan P. Marchack ,  Eugene J. O'Sullivan

IPC: H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  H01L43/02

Abstract: A semiconductor device and a method for fabricating the same. The semiconductor device includes a substrate and at least one trench line formed within the substrate. The semiconductor device further includes a self-aligned landing pad in contact with the at least one trench line, and a magnetic tunnel junction stack formed on and in contact with the self-aligned landing pad. The method includes forming a conductive layer on and in contact with at least one trench line formed within a substrate. Magnetic tunnel junction stack layers are deposited on and in contact with the conductive layer. The magnetic tunnel junction stack layers are etched to form a magnetic tunnel junction stack, where the etching stops on the conductive layer.

公开(公告)号：US20200321394A1

公开(公告)日：2020-10-08

申请号：US16374120

申请日：2019-04-03

Applicant: International Business Machines Corporation

Inventor： Pouya Hashemi ,  Bruce B. Doris ,  Chandrasekharan Kothandaraman ,  Nathan P. Marchack

IPC: H01L27/22 ,  H01L43/12

Abstract: A semiconductor structure and fabrication method of forming a semiconductor structure. The structure is a MRAM element having a first conductive electrode embedded in a first interconnect dielectric material layer upon which a multi-layered magnetic tunnel junction (MTJ) memory element is formed in a magnetoresistive random access memory (MRAM) device area. The first conductive electrode includes a first end having a top surface of a first surface area and a second end having a bottom surface of a second surface area, the first surface area being smaller than the second surface area. The second end of the bottom electrode includes a barrier liner material including a metal fill material, and the first end of the bottom electrode is a pillar structure formed as a result of an etchback process in which the metal barrier liner is recessed relative to the metal fill material.

公开(公告)号：US20200220072A1

公开(公告)日：2020-07-09

申请号：US16238846

申请日：2019-01-03

Applicant: International Business Machines Corporation

Inventor： Nathan P. Marchack ,  Bruce B. Doris ,  Pouya Hashemi

IPC: H01L43/12 ,  H01L27/22 ,  H01L43/02

Abstract: A semiconductor structure and fabrication method of forming a semiconductor structure. The method first provides an electrically conductive structure embedded in an interconnect dielectric material layer of a magnetoresistive random access memory device. A conductive landing pad is located on a surface of the electrically conductive structure. A multilayered magnetic tunnel junction (MTJ) structure and an MTJ cap layer is formed on the landing pad. Then there is formed a first conductive layer on top the MTJ cap layer and a second conductive metal layer formed on top the first conductive layer. A pillar mask structure is then patterned and formed on the second conductive layer. The resulting structure is subject to lithographic patterning and etching to form a patterned bilayer metal hardmask pillar structure on top the MTJ cap layer. Subsequent etch processing forms an MTJ stack having sidewalls aligned to the patterned bilayer metal hardmask pillar.