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    Integrated MEMS devices with controlled pressure environments by means of enclosed volumes
    11.
    发明授权
    Integrated MEMS devices with controlled pressure environments by means of enclosed volumes 有权
    集成的MEMS器件，具有受压力环境的封闭体积

    公开(公告)号：US08513747B1

    公开(公告)日：2013-08-20

    申请号：US13711070

    申请日：2012-12-11

    Applicant: InvenSense, Inc.

    Inventor： Kegang Huang ,  Martin Lim ,  Steven S. Nasiri

    IPC: H01L29/84

    CPC classification number: B81B3/0051 ,  B81B7/02 ,  B81B2201/025 ,  B81B2201/0271 ,  B81C1/00293 ,  H01L29/0657

    Abstract: An integrated MEMS device comprises a wafer where the wafer contains two or more cavities of different depths. The MEMS device includes one movable structure within a first cavity of a first depth and a second movable structure within a second cavity of a second depth. The cavities are sealed to maintain different pressures for the different movable structures for optimal operation. MEMS stops can be formed in the same multiple cavity depth processing flow. The MEMS device can be integrated with a CMOS wafer.

    Abstract translation: 集成MEMS器件包括晶片，其中晶片包含两个或更多个不同深度的空腔。 MEMS器件包括在第一深度的第一腔内的一个可移动结构和在第二深度的第二腔内的第二可移动结构。 空腔被密封以保持不同的可移动结构的不同压力以实现最佳操作。 可以在相同的多腔深度处理流程中形成MEMS止动件。 MEMS器件可以与CMOS晶片集成。

    MEMS device and process for RF and low resistance applications
    15.
    发明授权
    MEMS device and process for RF and low resistance applications 有权

    公开(公告)号：US09617141B2

    公开(公告)日：2017-04-11

    申请号：US14800604

    申请日：2015-07-15

    Applicant: InvenSense, Inc.

    Inventor： Michael Julian Daneman ,  Martin Lim ,  Xiang Li ,  Li-Wen Hung

    IPC: H01L29/84 ,  B81B3/00 ,  B81C3/00

    CPC classification number: B81B3/0086 ,  B81B2207/07 ,  B81C3/001 ,  B81C2201/019

    Abstract: MEMS device for low resistance applications are disclosed. In a first aspect, the MEMS device comprises a MEMS wafer including a handle wafer with one or more cavities containing a first surface and a second surface and an insulating layer deposited on the second surface of the handle wafer. The MEMS device also includes a device layer having a third and fourth surface, the third surface bonded to the insulating layer of the second surface of handle wafer; and a metal conductive layer on the fourth surface. The MEMS device also includes CMOS wafer bonded to the MEMS wafer. The CMOS wafer includes at least one metal electrode, such that an electrical connection is formed between the at least one metal electrode and at least a portion of the metal conductive layer.

    Differential sensing acoustic sensor
    16.
    发明授权
    Differential sensing acoustic sensor 有权
    差分感应传感器

    公开(公告)号：US09344808B2

    公开(公告)日：2016-05-17

    申请号：US14218561

    申请日：2014-03-18

    Applicant: InvenSense, Inc.

    Inventor： Mei-Lin Chan ,  Michael Julian Daneman ,  Erhan Polatkan Ata ,  Xiang Li ,  Martin Lim

    IPC: H04R19/04 ,  H04R1/08 ,  H04R31/00 ,  B81C1/00 ,  H04R19/00

    CPC classification number: H04R19/04 ,  B81B2201/0257 ,  B81B2207/012 ,  B81C1/00238 ,  B81C2203/0792 ,  H04R1/08 ,  H04R19/005 ,  H04R31/003 ,  H04R31/006 ,  H04R2201/003

    Abstract: A MEMS device includes a first plate coupled to a second plate and a fixed third plate formed on a first substrate. The first and second plates are displaced in the presence of an acoustic pressure differential across the surfaces of the first plate. The MEMS device also includes a first electrode formed on the third plate and a second electrode formed on the second substrate. The first, second plate, and third plates are contained in an enclosure formed by a first and second substrates. The device includes an acoustic port to expose the first plate to the environment. The MEMS device also includes a first gap formed between the second and third plates and a second gap formed between the second plate and the second electrode. The displacement of the second plate causes the first gap to change inversely to the second gap.

    Abstract translation: MEMS器件包括耦合到第二板的第一板和形成在第一衬底上的固定的第三板。 在第一板的表面上存在声压差的情况下，第一和第二板被移位。 MEMS器件还包括形成在第三板上的第一电极和形成在第二衬底上的第二电极。 第一，第二板和第三板被包含在由第一和第二基板形成的外壳中。 该装置包括用于将第一板暴露于环境的声学端口。 MEMS器件还包括形成在第二和第三板之间的第一间隙和形成在第二板和第二电极之间的第二间隙。 第二板的位移导致第一间隙与第二间隙成反比变化。

    Integrated heater on MEMS cap for wafer scale packaged MEMS sensors
    17.
    发明授权
    Integrated heater on MEMS cap for wafer scale packaged MEMS sensors 有权
    MEMS盖上的集成加热器，用于晶圆级封装的MEMS传感器

    公开(公告)号：US09302902B2

    公开(公告)日：2016-04-05

    申请号：US14176964

    申请日：2014-02-10

    Applicant: InvenSense, Inc.

    Inventor： Goksen G. Yaralioglu ,  Martin Lim

    IPC: H01L23/34 ,  B81B7/00 ,  B81C1/00 ,  H01L23/00

    CPC classification number: B81B7/0087 ,  B81B2207/012 ,  B81C1/0069 ,  H01L23/345 ,  H01L24/48 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/01322 ,  H01L2924/1461 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

    Abstract: A system and method for controlling temperature of a MEMS sensor are disclosed. In a first aspect, the system comprises a MEMS cap encapsulating the MEMS sensor and a CMOS die vertically arranged to the MEMS cap. The system includes a heater integrated into the MEMS cap. The integrated heater is activated to control the temperature of the MEMS sensor. In a second aspect, the method comprises encapsulating the MEMS sensor with a MEMS cap and coupling a CMOS die to the MEMS cap. The method includes integrating a heater into the MEMS cap. The integrated heater is activated to control the temperature of the MEMS sensor.

    Abstract translation: 公开了一种用于控制MEMS传感器的温度的系统和方法。 在第一方面，该系统包括封装MEMS传感器的MEMS盖和垂直地布置到MEMS盖的CMOS模头。 该系统包括集成到MEMS盖中的加热器。 集成加热器被激活以控制MEMS传感器的温度。 在第二方面，该方法包括用MEMS盖封装MEMS传感器，并将CMOS管芯耦合到MEMS盖。 该方法包括将加热器集成到MEMS盖中。 集成加热器被激活以控制MEMS传感器的温度。

    Internal electrical contact for enclosed MEMS devices
    18.
    发明授权
    Internal electrical contact for enclosed MEMS devices 有权
    封闭MEMS器件的内部电气接触

    公开(公告)号：US09221676B2

    公开(公告)日：2015-12-29

    申请号：US14590839

    申请日：2015-01-06

    Applicant: InvenSense, Inc.

    Inventor： Kegang Huang ,  Jongwoo Shin ,  Martin Lim ,  Michael Julian Daneman ,  Joseph Seeger

    IPC: B81C1/00

    CPC classification number: B81C1/00301 ,  B81B7/0064 ,  B81B2207/098 ,  B81C1/00269 ,  B81C2203/0118 ,  B81C2203/019 ,  B81C2203/031

    Abstract: A method of fabricating electrical connections in an integrated MEMS device is disclosed. The method comprises forming a MEMS wafer. Forming a MEMS wafer includes forming one cavity in a first semiconductor layer, bonding the first semiconductor layer to a second semiconductor layer with a dielectric layer disposed between the first semiconductor layer and the second semiconductor layer, and etching at least one via through the second semiconductor layer and the dielectric layer and depositing a conductive material on the second semiconductor layer and filling the at least one via. Forming a MEMS wafer also includes patterning and etching the conductive material to form one standoff and depositing a germanium layer on the conductive material, patterning and etching the germanium layer, and patterning and etching the second semiconductor layer to define one MEMS structure. The method also includes bonding the MEMS wafer to a base substrate.

    Abstract translation: 公开了一种在集成MEMS器件中制造电连接的方法。 该方法包括形成MEMS晶片。 形成MEMS晶片包括在第一半导体层中形成一个空腔，将第一半导体层与设置在第一半导体层和第二半导体层之间的电介质层结合到第二半导体层，并且通过第二半导体蚀刻至少一个通孔 层和介电层，并在第二半导体层上沉积导电材料并填充至少一个通孔。 形成MEMS晶片还包括图案化和蚀刻导电材料以形成一个间隔并在导电材料上沉积锗层，图案化和蚀刻锗层，以及图案化和蚀刻第二半导体层以限定一个MEMS结构。 该方法还包括将MEMS晶片接合到基底基板。

    SYSTEMS AND APPARATUS HAVING MEMS ACOUSTIC SENSORS AND OTHER MEMS SENSORS AND METHODS OF FABRICATION OF THE SAME
    19.
    发明申请
    SYSTEMS AND APPARATUS HAVING MEMS ACOUSTIC SENSORS AND OTHER MEMS SENSORS AND METHODS OF FABRICATION OF THE SAME 有权
    具有MEMS声学传感器和其他MEMS传感器的系统和装置及其制造方法

    公开(公告)号：US20150158722A1

    公开(公告)日：2015-06-11

    申请号：US14618251

    申请日：2015-02-10

    Applicant: INVENSENSE, INC.

    Inventor： Martin Lim ,  Fariborz Assaderaghi

    IPC: B81B7/00 ,  B81C1/00

    CPC classification number: B81B7/0061 ,  B81B7/02 ,  B81B2201/025 ,  B81B2201/0257 ,  B81B2201/0264 ,  B81B2207/012 ,  G01L23/125 ,  H04R19/005

    Abstract: A micro electro-mechanical system (MEMS) device is provided. The MEMS device includes: a substrate having a first surface and a second surface and wherein the first surface is exposed to an environment outside the MEMS device; and a MEMS microphone disposed at a first location on the second surface of the substrate and having a diaphragm positioned such that acoustic waves received at the MEMS microphone are incident on the diaphragm. The MEMS device also includes: a first integrated circuit disposed at a second location of the substrate, wherein the first integrated circuit is electrically coupled to the MEMS microphone; and a MEMS measurement device at a third location, wherein the MEMS measurement device comprises a motion sensor and a pressure sensor.

    Abstract translation: 提供了微机电系统（MEMS）装置。 MEMS器件包括：具有第一表面和第二表面的衬底，并且其中第一表面暴露于MEMS器件外部的环境; 以及MEMS麦克风，其设置在所述基板的第二表面上的第一位置处，并且具有定位成使得在所述MEMS麦克风处接收的声波入射在所述隔膜上的隔膜。 MEMS器件还包括：设置在衬底的第二位置处的第一集成电路，其中第一集成电路电耦合到MEMS麦克风; 以及在第三位置处的MEMS测量装置，其中所述MEMS测量装置包括运动传感器和压力传感器。

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