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公开(公告)号：US20070145379A1
公开(公告)日：2007-06-28
申请号：US10588473
申请日：2004-12-22
IPC分类号： H01L33/00
CPC分类号： H01L33/382 , H01L33/20 , H01L33/62 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2924/01079 , H01L2924/12041 , H01L2224/05599
摘要： A light emitting device (A) includes a semiconductor die (100). The semiconductor die includes: an epitaxial structure (120) arranged on a substrate (160), the epitaxial structure forming an active light generating region (140) between a first layer (120n) on a first side of the active region and having a first conductivity type, and a second layer (120p) on a second side of the active region and having a second conductivity type, the second side of the active region being opposite the first side of the active region and the second conductivity type being different that the first conductivity type; a first contact (180n) in operative electrical communication with the active region via the first layer in the epitaxial structure, the first contact being arranged on a side of the epitaxial structure opposite the substrate; a second contact (180p) in operative electrical communication with the active region via the second layer in the epitaxial structure, the second contact being arranged on a side of the epitaxial structure opposite the substrate; a first contact trace corresponding to the first contact and defined at a surface thereof distal from the substrate, the first trace including at least one area designated for bonding (320n); and, a second contact trace corresponding the second contact and defined at a surface thereof distal from the substrate, the second trace including at least one area (320p) designated for bonding. Suitably, the first contact trace is substantially enclosed within the second contact trace.
摘要翻译： 发光器件（A）包括半导体管芯（100）。 所述半导体管芯包括：布置在衬底（160）上的外延结构（120），所述外延结构在所述有源区的第一侧上的第一层（120 n）之间形成有源光产生区（140），并且具有 第一导电类型和在有源区的第二侧上具有第二导电类型的第二层（120 p），有源区的第二面与有源区的第一侧相反，第二导电类型不同 第一种导电类型; 经由外延结构中的第一层与有源区域工作电连通的第一接触（180n），第一接触件布置在与衬底相对的外延结构的一侧上; 通过外延结构中的第二层与有源区域电连通的第二触点（180p），第二触点布置在与衬底相对的外延结构的一侧上; 第一接触迹线对应于第一接触并限定在其远离基底的表面，第一迹线包括指定用于键合的至少一个区域（320n）; 以及与所述第二接触相对应并限定在其远离所述基底的表面的第二接触迹线，所述第二迹线包括指定用于接合的至少一个区域（320 p）。 适当地，第一接触迹线基本上封闭在第二接触迹线内。
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公开(公告)号：US07023022B2
公开(公告)日：2006-04-04
申请号：US10416996
申请日：2001-11-14
IPC分类号： H01L33/00
CPC分类号： H01L33/20 , H01L33/22 , H01L33/44 , H01L33/46 , H01L2224/16225 , H01L2224/48091 , H01L2224/49107 , H01L2924/00014
摘要： A light-emitting package includes a substantially transparent substrate having a first surface and a second surface including a lens. The package also includes a light-emitting diode (LED) adapted to emit light having a predetermined wavelength, the LED being secured over the first surface of the substantially transparent substrate. The second surface of the substrate defines a principal light emitting surface of the package. The lens at the second surface has a grating pattern that matches the predetermined wavelength of the light emitted from the LED for controlling the emission geometry of the light emitted by the package. The grating pattern has a radial configuration including a series of circles that are concentric.
摘要翻译： 发光封装包括具有第一表面和包括透镜的第二表面的基本上透明的基板。 封装还包括适于发射具有预定波长的光的发光二极管（LED），LED固定在基本上透明的基板的第一表面上。 衬底的第二表面限定了封装的主发光表面。 在第二表面处的透镜具有与从LED发射的光的预定波长匹配的光栅图案，用于控制由封装发射的光的发射几何形状。 光栅图案具有包括同心圆的一系列的径向构型。
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公开(公告)号：US20050230700A1
公开(公告)日：2005-10-20
申请号：US10826980
申请日：2004-04-16
摘要： A flip chip light emitting diode (12) includes a light-transmissive substrate (10) with a base semiconducting layer (40) disposed thereupon. A conductive mesh (18) is disposed on the base semiconducting layer (40) and is in electrically conductive contact therewith. Light-emitting micromesas (30) are disposed in openings (20) of the conductive mesh (18). Each light emitting micromesa (30) has a topmost layer (46) of a second conductivity type that is opposite the first conductivity type. A first conductivity type electrode (14) is disposed on the base semiconducting layer (40) and is in electrical communication with the electrically conductive mesh (18). An insulating layer (60) is disposed over the electrically conductive mesh (18). A second conductivity type electrode layer (24) is disposed over the insulating layer (60) and the light-emitting micromesas (30). the insulating layer (60) insulates the second conductivity type electrode layer (24) from the electrically conductive mesh (18).
摘要翻译： 倒装芯片发光二极管（12）包括具有设置在其上的基极半导体层（40）的透光衬底（10）。 导电网（18）设置在基底半导体层（40）上并与其导电接触。 发光微镜（30）设置在导电网（18）的开口（20）中。 每个发光微镜（30）具有与第一导电类型相反的第二导电类型的最顶层（46）。 第一导电型电极（14）设置在基底半导体层（40）上并与导电网（18）电连通。 绝缘层（60）设置在导电网（18）之上。 第二导电型电极层（24）设置在绝缘层（60）和发光微孔（30）之上。 绝缘层（60）将第二导电型电极层（24）与导电网（18）绝缘。
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公开(公告)号：US06964877B2
公开(公告)日：2005-11-15
申请号：US10832969
申请日：2004-04-27
申请人： Chen-Lun Hsing Chen , Stanton Weaver, Jr. , Ivan Eliashevich , Sebastien Libon , Mehmet Arik , David Shaddock
发明人： Chen-Lun Hsing Chen , Stanton Weaver, Jr. , Ivan Eliashevich , Sebastien Libon , Mehmet Arik , David Shaddock
CPC分类号： H01L33/486 , H01L24/97 , H01L33/62 , H01L33/647 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/16 , H01L2224/97 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/12041 , H01L2924/12042 , H01L2924/3011 , H01L2224/81 , H01L2924/00 , H01L2224/05599 , H01L2224/05644 , H01L2224/05155 , H01L2224/05166
摘要： Surface mount light emitting diode (LED) packages each contain a light emitting diode (LED) die (24). A plurality of arrays of openings are drilled into an electrically insulating sub-mount wafer (10). A metal is applied to the drilled openings to produce a plurality of via arrays (12). The LED dice (24) are flip-chip bonded onto a frontside (16) of the sub-mount wafer (10). The p-type and n-type contacts of each flip-chip bonded LED (24) electrically communicate with a solderable backside (18) of the sub-mount wafer (10) through a via array (12). A thermal conduction path (10, 12) is provided for thermally conducting heat from the flip-chip bonded LED dice (24) to the solderable backside (18) of the sub-mount wafer (10). Subsequent to the flip-chip bonding, the sub-mount wafer (10) is separated to produce the surface mount LED packages.
摘要翻译： 表面贴装发光二极管（LED）封装各自包含发光二极管（LED）裸片（24）。 将多个开口阵列钻入电绝缘子安装晶片（10）中。 金属被施加到钻孔以产生多个通孔阵列（12）。 LED芯片（24）被倒装芯片接合到子安装晶片（10）的前侧（16）上。 每个倒装芯片接合的LED（24）的p型和n型触点通过通孔阵列（12）与辅助安装晶片（10）的可焊接背面（18）电连通。 提供了一种导热路径（10,12），用于将来自倒装芯片接合的LED骰子（24）的热量传导到子安装晶片（10）的可焊接背面（18）。 在倒装芯片接合之后，子安装晶片（10）被分离以产生表面贴装LED封装。
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公开(公告)号：US07842547B2
公开(公告)日：2010-11-30
申请号：US10584434
申请日：2004-12-21
CPC分类号： H01L33/0079 , H01L33/62 , H01L2224/48091 , H01L2924/10253 , H01L2924/12041 , H01L2924/3025 , H01L2924/00014 , H01L2924/00
摘要： In a method for fabricating a flip-chip light emitting diode device, epitaxial layers are deposited on a sapphire growth substrate to produce an epitaxial wafer. A plurality of light emitting diode devices are fabricated on the epitaxial wafer. The epitaxial wafer is diced to generate a device die. The device die is flip chip bonded to a mount. The flip chip bonding includes securing the device die to the mount by bonding at least one electrode of the device die to at least one bonding pad of the mount. Subsequent to the flip chip bonding, the growth substrate of the device die is removed via the application of laser light.
摘要翻译： 在制造倒装芯片发光二极管器件的方法中，将外延层沉积在蓝宝石生长衬底上以产生外延晶片。 在外延晶片上制造多个发光二极管器件。 切割外延晶片以产生器件裸片。 器件芯片被倒装芯片结合到安装座。 倒装芯片接合包括通过将器件管芯的至少一个电极接合到安装件的至少一个接合焊盘来将器件裸片固定到安装座。 在倒装芯片接合之后，通过施加激光来去除器件裸片的生长衬底。
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公开(公告)号：US20100181584A1
公开(公告)日：2010-07-22
申请号：US12304533
申请日：2006-07-11
CPC分类号： H01L33/44 , H01L33/0079 , H01L33/62 , H01L33/64 , H01L2924/0002 , H01L2933/0091 , H01L2924/00
摘要： A light emitting device includes a stack of semiconductor layers defining a light emitting pn junction and a dielectric layer disposed over the stack of semiconductor layers. The dielectric layer has a refractive index substantially matching a refractive index of the stack of semiconductor layers. The dielectric layer has a principal surface distal from the stack of semiconductor layers. The distal principal surface includes patterning, roughening, or texturing configured to promote extraction of light generated in the stack of semiconductor layers.
摘要翻译： 发光器件包括限定发光pn结的半导体层的叠层和设置在半导体层堆叠上的电介质层。 电介质层的折射率基本上与半导体层叠层的折射率相匹配。 电介质层具有远离半导体层堆叠的主表面。 远端主表面包括图案化，粗糙化或纹理化，其被配置为促进在半导体层堆叠中产生的光的提取。
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17.发明授权Flip-chip light emitting diode with indium-tin-oxide based reflecting contacts 有权倒装芯片发光二极管，具有基于铟锡氧化物的反射触点公开(公告)号：US07358539B2
公开(公告)日：2008-04-15
申请号：US10249436
申请日：2003-04-09
IPC分类号： H01L29/22 , H01L29/227 , H01L33/00 , H01L23/48
CPC分类号： H01L33/20 , H01L33/405 , H01L33/42 , H01L33/62 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/16 , H01L2933/0016 , H01L2224/05644 , H01L2924/00014 , H01L2224/05124 , H01L2224/05139
摘要： A flip chip light emitting diode die (12) includes a light-transmissive substrate (20) and a plurality of semiconductor layers (22) are disposed on the light-transmissive substrate (20). The semiconductor layers (22) define a light-generating p/n junction. An electrode (30) is formed on the semiconductor layers (22) for flip-chip bonding the diode die (12) to an associated mount (14). The electrode (30) includes an optically transparent layer (42) formed of a substantially optically transparent material adjacent to the semiconductor layers (22) that makes ohmic contact therewith, and a reflective layer (44) adjacent to the optically transparent layer (42) and in electrically conductive communication therewith.
摘要翻译： 倒装芯片发光二极管管芯（12）包括透光基板（20），并且多个半导体层（22）设置在透光基板（20）上。 半导体层（22）限定发光p / n结。 在半导体层（22）上形成电极（30），用于将二极管管芯（12）倒装成相关的安装件（14）。 电极（30）包括由与其与其形成欧姆接触的半导体层（22）相邻的基本上光学透明的材料形成的光学透明层（42）和与光学透明层（42）相邻的反射层（44） 并与其导电连通。
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公开(公告)号：US07190005B2
公开(公告)日：2007-03-13
申请号：US10874104
申请日：2004-06-22
申请人： Shawn R. Gibb , Robert F. Karlicek , Prosanto K. Mukerji , Hari S. Venugopalan , Ivan Eliashevich
发明人： Shawn R. Gibb , Robert F. Karlicek , Prosanto K. Mukerji , Hari S. Venugopalan , Ivan Eliashevich
CPC分类号： H01L33/40 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A light-emitting element (24) is disclosed. A light emitting diode (LED) includes a sapphire substrate (26) having front and back sides (33, 35), and a plurality of semiconductor layers (28, 30, 32) deposited on the front side (33) of the sapphire substrate (26). The semiconductor layers (28, 30, 32) define a light-emitting structure that emits light responsive to an electrical input. A metallization stack (40) includes an adhesion layer (34) deposited on the back side (35) of the sapphire substrate (26), and a solderable layer (38) connected to the adhesion layer (34) such that the solderable layer (38) is secured to the sapphire substrate (26) by the adhesion layer (34). A support structure (42) is provided on which the LED is disposed. A solder bond (44) is arranged between the LED and the support structure (42). The solder bond (44) secures the LED to the support structure (42).
摘要翻译： 公开了一种发光元件（24）。 发光二极管（LED）包括具有正面和背面（33,35）的蓝宝石衬底（26）和沉积在蓝宝石衬底的前侧（33）上的多个半导体层（28,30,32） （26）。 半导体层（28,30,32）限定响应于电输入而发光的发光结构。 金属化堆叠（40）包括沉积在蓝宝石衬底（26）的背面（35）上的粘合层（34）和连接到粘合层（34）的可焊接层（38），使得可焊层（ 38）通过粘合层（34）固定到蓝宝石衬底（26）。 设置有LED的支撑结构（42）。 在LED和支撑结构（42）之间布置有焊料接合（44）。 焊接接合（44）将LED固定到支撑结构（42）。
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19.发明授权公开(公告)号：US07064356B2
公开(公告)日：2006-06-20
申请号：US10826980
申请日：2004-04-16
IPC分类号： H01L33/00
摘要： A flip chip light emitting diode (12) includes a light-transmissive substrate (10) with a base semiconducting layer (40) disposed thereupon. A conductive mesh (18) is disposed on the base semiconducting layer (40) and is in electrically conductive contact therewith. Light-emitting micromesas (30) are disposed in openings (20) of the conductive mesh (18). Each light emitting micromesa (30) has a topmost layer (46) of a second conductivity type that is opposite the first conductivity type. A first conductivity type electrode (14) is disposed on the base semiconducting layer (40) and is in electrical communication with the electrically conductive mesh (18). An insulating layer (60) is disposed over the electrically conductive mesh (18). A second conductivity type electrode layer (24) is disposed over the insulating layer (60) and the light-emitting micromesas (30). the insulating layer (60) insulates the second conductivity type electrode layer (24) from the electrically conductive mesh (18).
摘要翻译： 倒装芯片发光二极管（12）包括具有设置在其上的基极半导体层（40）的透光衬底（10）。 导电网（18）设置在基底半导体层（40）上并与其导电接触。 发光微镜（30）设置在导电网（18）的开口（20）中。 每个发光微镜（30）具有与第一导电类型相反的第二导电类型的最上层（46）。 第一导电型电极（14）设置在基底半导体层（40）上并与导电网（18）电连通。 绝缘层（60）设置在导电网（18）之上。 第二导电型电极层（24）设置在绝缘层（60）和发光微孔（30）之上。 绝缘层（60）将第二导电型电极层（24）与导电网（18）绝缘。
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公开(公告)号：US06902990B2
公开(公告)日：2005-06-07
申请号：US10114099
申请日：2002-04-02
申请人： Mark Gottfried , Michael G. Brown , Ivan Eliashevich , Robert F. Karlicek, Jr. , James E. Nering
发明人： Mark Gottfried , Michael G. Brown , Ivan Eliashevich , Robert F. Karlicek, Jr. , James E. Nering
IPC分类号： B23K26/073 , B23K26/40 , H01L21/301 , H01L21/302 , H01L21/304 , H01L21/46 , H01L21/78 , H01L33/00 , H01L21/406
CPC分类号： B23K26/0738 , B23K26/066 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50 , H01L21/3043 , H01L21/6836 , H01L21/78 , H01L33/0095 , H01L2221/68327 , H01L2221/6834 , H01L2924/0002 , Y10S438/94 , H01L2924/00
摘要： A method for separating a semiconductor wafer into several thousand devices or dies by laser ablation. Semiconductor wafers are initially pre-processed to create multiple devices, such as blue LEDs, on the wafers. The wafers are then mounted with tape coated with a generally high level adhesive. The mounted wafer is then placed on a vacuum chuck (which is itself positioned on a computer controlled positioning table) to hold it in place during the cutting process. The cutting surface is then covered with a protective layer to prevent contamination from the effluent resulting from the actual cutting process. A laser beam is generated and passed through optical elements and masks to create a pattern, such as a line or multiple lines. The patterned laser projection is directed at the wafer at a substantially normal angle and applied to the wafer until at least a partial cut is achieved through it. A mechanical separation process completes the separation when only a partial cut is achieved by the patterned laser projection. The dies are then transferred to a grip ring for further processing.
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