公开(公告)号：US5965929A

公开(公告)日：1999-10-12

申请号：US623905

申请日：1996-03-27

Applicant: Klaus Gnannt ,  Jakob Huber

Inventor： Klaus Gnannt ,  Jakob Huber

IPC: H01L29/73 ,  H01L21/331 ,  H01L29/08 ,  H01L29/167 ,  H01L29/732 ,  H01L27/082 ,  H01L27/102 ,  H01L29/70 ,  H01L31/11

CPC classification number: H01L29/66303 ,  H01L29/0804 ,  H01L29/167 ,  H01L29/7322 ,  Y10S257/919

Abstract: A bipolar silicon transistor includes at least one emitter zone with n.sup.+ arsenic doping and with a phosphorus doping. The ratio between arsenic dopant concentration and phosphorus dopant concentration is between 10:1 and 500:1 in the at least one emitter zone. The at least one emitter zone may also have a penetration depth of less than 0.5 .mu.m. A method for producing a bipolar silicon transistor includes implanting a n.sup.+ -doped emitter zone with arsenic, implanting the n.sup.+ -doped emitter zone with phosphorus, setting a ratio in the n.sup.+ -doped emitter zone between the arsenic dopant concentration and phosphorus dopant concentration to between 10:1 and 500:1, and annealing crystal defects.

Abstract translation: 双极硅晶体管包括具有n +砷掺杂和磷掺杂的至少一个发射区。 在至少一个发射区中，砷掺杂剂浓度与磷掺杂剂浓度之比在10:1和500:1之间。 该至少一个发射区也可具有小于0.5μm的穿透深度。 一种用于制造双极硅晶体管的方法，包括用砷注入n +掺杂的发射极区，用磷注入n +掺杂的发射极区，将n +掺杂发射区中的砷掺杂浓度与磷掺杂剂浓度之间的比设定为 10：1和500：1，退火晶体缺陷。

公开(公告)号：US5819837A

公开(公告)日：1998-10-13

申请号：US810022

申请日：1997-03-03

Applicant: Franz Hugo ,  Jakob Huber ,  Robert Y. Abramson ,  John Sheehan

Inventor： Franz Hugo ,  Jakob Huber ,  Robert Y. Abramson ,  John Sheehan

IPC: B22D13/06 ,  B22D13/10 ,  B22D23/00 ,  B22D27/13 ,  B22D27/15 ,  B22D35/04

CPC classification number: B22D27/15 ,  B22D13/08 ,  B22D23/006 ,  B22D27/13

Abstract: Metal is melted in an induction-heated crucible (13) on which a mold (10) with a downward-facing filling opening (26) is located in the melting position. After melting the metal, the crucible (13) and the mold (10) are jointly rotated about a horizontal axis (A--A) into a tilting position in which the molten material flows from the crucible (13) into the mold (10). In order to melt reactive metals, melting is done in a crucible (13) that is surrounded by a vacuum, this crucible being surrounded by an induction coil (15) outside of the vacuum. The mold (10) is located in a vacuum-sealed casting chamber (6) which is evacuated together with the crucible (13) prior to melting and casting is carried out by a joint tilting of the crucible (13), casting chamber (6) and mold (10) by at least 180 degrees while the vacuum is maintained.

Abstract translation: 金属在感应加热的坩埚（13）中熔化，其中具有向下的填充开口（26）的模具（10）位于熔化位置。 在熔化金属之后，坩埚（13）和模具（10）围绕水平轴线（A-A）共同旋转到熔融材料从坩埚（13）流入模具（10）的倾斜位置。 为了熔化反应性金属，在由真空包围的坩埚（13）中进行熔化，该坩埚被真空外的感应线圈（15）包围。 模具（10）位于真空密封的铸造室（6）中，其在熔化之前与坩埚（13）一起抽空，并且通过坩埚（13），铸造室（6）的接合倾斜 ）和模具（10）至少180度，同时保持真空。

公开(公告)号：US5406114A

公开(公告)日：1995-04-11

申请号：US159598

申请日：1993-12-01

Applicant: Knut Brenndoerfer ,  Jakob Huber

Inventor： Knut Brenndoerfer ,  Jakob Huber

IPC: H01L23/12 ,  H01L21/331 ,  H01L23/495 ,  H01L23/66 ,  H01L29/73 ,  H01L29/50 ,  H01L27/082 ,  H01L29/40

CPC classification number: H01L24/06 ,  H01L23/49562 ,  H01L23/66 ,  H01L24/49 ,  H01L2223/6644 ,  H01L2224/04042 ,  H01L2224/05599 ,  H01L2224/0603 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/4847 ,  H01L2224/48599 ,  H01L2224/49111 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01068 ,  H01L2924/01072 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011

Abstract: A high-frequency transistor has a suitably doped and structured semiconductor chip (1) that is composed of a doped Si substrate and has base, collector and emitter contactings (2, 3, 4). The chip (1) is surrounded by a housing (8), the contacts being connected to the respective base, collector and emitter terminals (6, 7, 5) of the housing. With the housing the transistor has a high gain at frequencies above 1 GHz. The base, collector and emitter contacts (2, 3, 4) are provided at the upper side of the semiconductor chip (1). The semiconductor chip (1) has its underside arranged on the emitter terminal (5) of the housing (8) which is fashioned as HF ground. The emitter contact (4) is connected over a short distance to the emitter terminal (5) of the housing (8). The base and collector contacts (2, 3) are each respectively connected via at least one bond wire (9) to the respective base or collector terminals (6, 7).

Abstract translation: 高频晶体管具有由掺杂的Si衬底组成并具有基极，集电极和发射极接触（2,3,4）的适当掺杂和结构化的半导体芯片（1）。 芯片（1）由壳体（8）围绕，触点连接到壳体的相应的基座，集电极和发射极端子（6,7）。 使用外壳，晶体管在高于1 GHz的频率具有高增益。 基极，集电极和发射极触点（2,3,4）设置在半导体芯片（1）的上侧。 半导体芯片（1）的下侧布置在壳体（8）的发射极端子（5）上，其被形成为HF接地。 发射极触点（4）在短距离上连接到壳体（8）的发射极端子（5）。 基极和集电极触点（2,3）分别经由至少一个接合线（9）连接到相应的基极或集电极端子（6,7）。

公开(公告)号：US4718478A

公开(公告)日：1988-01-12

申请号：US689387

申请日：1985-01-07

Applicant: Jakob Huber

Inventor： Jakob Huber

IPC: F24D10/00 ,  F24D19/10 ,  G05D23/19 ,  G05D23/00 ,  G01K17/06 ,  F24D3/02

CPC classification number: F24D19/1048 ,  F24D10/006 ,  F24D19/1009 ,  G05D23/1931

Abstract: A process controlling a thermal installation is described. The flow of a process liquid through a heat exchanger is achieved dependent upon two temperatures. One is the return temperature of the process liquid which, through the switching on and off or modulation of a circulation pump is maintained at a constant value. The other is the room or outside temperatures or the difference between these two temperatures, whereby during the deviation of a predeterminable limiting value the pump is also switched on and off or modulated. Since the supply temperature from a boiler has a constant temperature, for a central heating system the same amount of heat is drawn from each unit of heating water and thus the measure of the pump flow is sufficient to determine the actual heat consumption. Thereby the fair division of heating costs for each tenant according to actual amount consumed is made possible.

Abstract translation: 描述了控制热安装的过程。 通过热交换器的处理液体的流动取决于两个温度。 一个是通过循环泵的接通和关闭或调制保持恒定值的处理液的返回温度。 另一个是房间或外部温度或这两个温度之间的差异，由此在可预定的限制值的偏差期间，泵也被接通和关闭或调制。 由于来自锅炉的供应温度具有恒定的温度，因此对于中央供暖系统，从每个加热水单元抽取相同的热量，因此泵流量的测量足以确定实际的热消耗。 因此，可以根据实际消耗的数量公平分配每个租户的供暖成本。

公开(公告)号：US4528518A

公开(公告)日：1985-07-09

申请号：US518141

申请日：1983-07-28

Applicant: Jakob Huber ,  Ewald Pettenpaul ,  Felix Petz

Inventor： Jakob Huber ,  Ewald Pettenpaul ,  Felix Petz

IPC: H03F1/18 ,  H03F3/193 ,  H03F3/60 ,  H03F3/16

CPC classification number: H03F3/607 ,  H03F1/18 ,  H03F3/1935

Abstract: A chain amplifier assembly, includes a semiconductor body, a chain amplifier disposed in the semiconductor body and having an input, an output, a plurality of interconnected amplifier stages having transition regions therebetween, each of the stages including a plurality of field-effect transistors having source, gate and drain terminals, each of the source terminals being connected to a given common source potential, a plurality of ohmic resistors and inductances connected in series between the gate terminals forming a gate line, a plurality of capacitances each having a lead connected in parallel to the gate line and another lead connected to the given common source potential, a plurality of inductances connected in series between the drain terminals forming a drain line, a plurality of additional ohmic resistors having a lead connected in parallel to the drain line and another lead connected to the given common source potential, a plurality of additional capacitances having a lead connected in parallel to the drain line and another lead connected to the given common source potential, matching elements in the form of capacitances, inductances and ohmic resistors connected at the input, output and transition regions, the drain and gate lines being wave guides formed with metal coatings, insulating coatings and doping concentrations required for the field-effect transistors, and additional circuit elements monolithically integrated into the semiconductor body.

Abstract translation: 一种链式放大器组件，包括半导体本体，布置在半导体本体中的链放大器，具有输入，输出，多个互连的放大器级，其间具有过渡区域，每个级包括多个场效应晶体管，其具有多个场效应晶体管， 源极，栅极和漏极端子，每个源极端子连接到给定的共源极电位，多个欧姆电阻器和电感器串联连接在形成栅极线的栅极端子之间，多个电容器各自具有连接在一起的引线 平行于栅极线，另一个引线连接到给定的公共源电位，多个电感串联连接在形成漏极线的漏极端子之间，多个额外的欧姆电阻器具有与漏极线并联连接的引线 引线连接到给定的公共源极电位，多个附加电容具有引线c 并联连接到漏极线，另一个引线连接到给定的公共源极电位，连接在输入，输出和过渡区域的电容，电感和欧姆电阻形式的匹配元件，漏极和栅极线是与 金属涂层，绝缘涂层和场效应晶体管所需的掺杂浓度，以及单片集成到半导体本体中的附加电路元件。

公开(公告)号：US20050263851A1

公开(公告)日：2005-12-01

申请号：US11127765

申请日：2005-05-11

Applicant: Jakob Huber

Inventor： Jakob Huber

IPC: H01L21/331 ,  H01L21/8222 ,  H01L27/082 ,  H01L29/00 ,  H01L29/06 ,  H01L29/732

CPC classification number: H01L29/7322 ,  H01L29/0692

Abstract: A transistor assembly having a transistor includes a plurality of transistor regions, each of which has a vertical transistor structure having a collector semiconductor region, a base semiconductor region and an emitter semiconductor region, emitter contacting regions arranged above the transistor regions and base contacting regions connected to the base semiconductor regions via a polycrystalline semiconductor layer, wherein the polycrystalline semiconductor layer is structured such that the base contacting regions of transistor regions which are not part of the transistor are electrically isolated from base contacting regions of transistor regions which are part of the transistor.

Abstract translation: 具有晶体管的晶体管组件包括多个晶体管区域，每个晶体管区域具有具有集电极半导体区域的垂直晶体管结构，基极半导体区域和发射极半导体区域，配置在晶体管区域上方的发射极接触区域和连接的基极接触区域 通过多晶半导体层到基底半导体区域，其中多晶半导体层被构造成使得不是晶体管的一部分的晶体管区域的基极接触区域与作为晶体管的一部分的晶体管区域的基极接触区域电隔离 。

公开(公告)号：US06949799B2

公开(公告)日：2005-09-27

申请号：US10479310

申请日：2002-05-10

Applicant: Klaus Diefenbeck ,  Klaus Gnannt ,  Jakob Huber ,  Ulrich Krumbein

Inventor： Klaus Diefenbeck ,  Klaus Gnannt ,  Jakob Huber ,  Ulrich Krumbein

IPC: H01L23/60 ,  H01L23/62 ,  H01L27/02 ,  H01L29/10 ,  H01L29/73 ,  H01L29/732 ,  H01L29/735

CPC classification number: H01L29/7322 ,  H01L29/1004 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor structure including a substrate, a device layer and a contact arranged on the substrate, comprises an ESD protective means, arranged between the substrate and the contact, such, that in the ESD case a breakthrough from the ESD protective means to the contact occurs.

Abstract translation: 包括衬底，器件层和布置在衬底上的触点的半导体结构包括布置在衬底和触点之间的ESD保护装置，在ESD情况下，从ESD保护装置到接触的突破发生 。

公开(公告)号：US20050153546A1

公开(公告)日：2005-07-14

申请号：US10755844

申请日：2004-01-12

Applicant: Carsten Ahrens ,  Jakob Huber ,  Uwe Seidel

Inventor： Carsten Ahrens ,  Jakob Huber ,  Uwe Seidel

IPC: H01L23/52 ,  H01L21/3205 ,  H01L21/768 ,  H01L23/48 ,  H01L23/498 ,  H01L21/44

CPC classification number: H01L21/76843 ,  H01L21/76846 ,  H01L21/76873 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/49827 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/13009 ,  H01L2924/3011

Abstract: A method for producing a contact structure on a structured surface comprising producing a first conductive layer on the structured surface, wherein the first conductive layer comprising tungsten. A conductive seed layer is produced on the first conductive layer, the contact structure being produced by electroplating on the seed layer. The first conductive layer serves as an etch stop for selectively removing substrate material from the backside.

Abstract translation: 一种用于在结构化表面上制造接触结构的方法，包括在所述结构化表面上产生第一导电层，其中所述第一导电层包含钨。 在第一导电层上产生导电种子层，接触结构通过在种子层上电镀来制造。 第一导电层用作用于从背面选择性地去除衬底材料的蚀刻停止件。

公开(公告)号：US5803936A

公开(公告)日：1998-09-08

申请号：US721117

申请日：1996-09-26

Applicant: Jakob Huber

Inventor： Jakob Huber

IPC: C10J3/06 ,  B01J7/00 ,  F02B43/00 ,  F23G5/12

CPC classification number: C10J3/06 ,  C10J3/005 ,  C10J2200/152 ,  C10J2200/154 ,  C10J2200/158 ,  C10J2300/0956 ,  C10J2300/0986 ,  C10J2300/0996 ,  C10J2300/165 ,  C10J2300/1693 ,  C10J2300/1884 ,  Y02P20/129

Abstract: A gasification reactor comprising of a slow turning rotation chamber (1) with tapered end pieces (7) and sealed by stationary closures (8, 9). The chamber is divided by rings (3, 3') into three sections (4, 5, 6). The first section (4) is used to dry and pre-heat the combustible material (12). Section (5) is the gasification zone and section (6) is used to collect and transport the ash to the outside of the chamber. In order to obtain a better insulation against loss of heat an inner cylinder (24) is fitted into the chamber. The feed stock material (12) is brought into the chamber with a hollow piston (13) through the stationary closure (8) and inside the chamber the material is moved along by the rotation of the chamber. Fresh air supply is introduced into the chamber through special form parts (25), and the combustible gas is collected and returned to the outside with the pipe (31). Ash and slag are lifted and deposited in a collector (21) from where they are brought to the outside. A continuous operation is possible, and the gasification process can be pressurized to supply the gas directly to a user without the need for a gas compressor. Almost any solid combustible material can be gasified such as wood, paper, coal in small grain size, plastic, and dry biomass. Small amounts of waste oil can be mixed with the feed stock.

Abstract translation: 一种气化反应器，包括具有锥形端部件（7）并由静止封闭件（8,9）密封的慢转动旋转室（1）。 腔室被环（3,3'）分成三个部分（4,5,6）。 第一部分（4）用于干燥和预热可燃材料（12）。 部分（5）是气化区，部分（6）用于收集和运输灰分到室外。 为了获得更好的绝热而不损失热量，内筒（24）装配到腔室中。 原料（12）通过固定封闭件（8）通过中空活塞（13）进入腔室，并且在室内，材料通过腔室的旋转而移动。 新鲜空气供应通过特殊形式的部件（25）引入室内，可燃气体被收集并返回到管道（31）的外部。 灰和渣被提起并沉积在从它们被带到外部的收集器（21）中。 可以进行连续操作，并且可以对气化过程进行加压以将气体直接供应给用户而不需要气体压缩机。 几乎任何固体可燃材料都可以气化，如木材，纸，小粒度的煤，塑料和干燥的生物质。 少量的废油可以与原料混合。

公开(公告)号：US4996504A

公开(公告)日：1991-02-26

申请号：US407736

申请日：1989-09-15

Applicant: Jakob Huber ,  Wolfgang Meier

Inventor： Jakob Huber ,  Wolfgang Meier

IPC: H03H11/24

CPC classification number: H03H11/245

Abstract: In a monolithically integratable microwave attenuation element, the attenuation is switchable between various, discrete values and the signal experiences only a small phase shift when switched between the individual attenuation values. The drain-source paths of field effect transistors (Q1, Q2, Q3) in the attenuation element are arranged in a PI configuration. Resistors (R11, R22, R33) are connected parallel to the drain-source paths of the field effect transistors (Q1, Q2, Q3) that are arranged in PI configuration.

Abstract translation: 在单片可积分微波衰减元件中，衰减可在各种离散值之间切换，并且当在各个衰减值之间切换时，信号仅经历小的相移。 衰减元件中的场效应晶体管（Q1，Q2，Q3）的漏极 - 源极路径被布置成PI配置。 电阻器（R11，R22，R33）并联连接在以PI配置布置的场效应晶体管（Q1，Q2，Q3）的漏极 - 源极路径上。