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11.发明授权Film formation method and apparatus for forming silicon-containing insulating film doped with metal 有权用于形成掺杂有金属的含硅绝缘膜的成膜方法和装置公开(公告)号：US08034673B2
公开(公告)日：2011-10-11
申请号：US12417939
申请日：2009-06-09
IPC分类号： H01L21/00
CPC分类号： H01L21/3185 , H01L21/02145 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/02274 , H01L21/28282 , H01L21/31612 , H01L29/792
摘要： A film formation method for a semiconductor process performs a film formation process to form a silicon-containing insulating film doped with a metal on a target substrate, in a process field inside a process container configured to be selectively supplied with a silicon source gas and a metal source gas. The method includes forming a first insulating thin layer by use of a chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas; then, forming a first metal thin layer by use of a chemical reaction of the metal source gas, while maintaining a shut-off state of supply of the silicon source gas; and then, forming a second insulating thin layer by use of the chemical reaction of the silicon source gas, while maintaining a shut-off state of supply of the metal source gas.
摘要翻译： 半导体工艺的成膜方法在被配置为选择性地供应有硅源气体的处理容器内的处理场中进行成膜处理，以在目标衬底上形成掺杂有金属的含硅绝缘膜， 金属源气体。 该方法包括通过利用硅源气体的化学反应形成第一绝缘薄层，同时保持金属源气体的切断状态; 然后通过使用金属源气体的化学反应形成第一金属薄层，同时保持硅源气体的供应关闭状态; 然后通过利用硅源气体的化学反应形成第二绝缘薄层，同时保持金属源气体的截止供应状态。
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公开(公告)号：US20100112796A1
公开(公告)日：2010-05-06
申请号：US12441741
申请日：2008-06-06
申请人： Pao-Hwa Chou , Kazuhide Hasebe , Shigeru Nakajima , Yasushi Akasaka , Mitsuaki Iwashita , Reiji Niino
发明人： Pao-Hwa Chou , Kazuhide Hasebe , Shigeru Nakajima , Yasushi Akasaka , Mitsuaki Iwashita , Reiji Niino
IPC分类号： H01L21/28 , H01L21/3213
CPC分类号： H01L21/3086 , H01L21/0337 , H01L21/3088 , H01L21/32139 , H01L29/66795
摘要： Disclosed is a patterning method including: forming, on a thin film, a sacrificial film made of a material different from that of the thin film and made of SiBN; processing the sacrificial film into a pattern having a preset interval by using a photolithography technique; forming, on sidewalls of the processed sacrificial film, sidewall spacers made of a material different from those of the sacrificial film and the thin film; removing the processed sacrificial film; and processing the thin film by using the sidewall spacers as a mask.
摘要翻译： 公开了一种图案化方法，包括：在薄膜上形成由与SiBN不同的材料制成的牺牲膜; 通过使用光刻技术将牺牲膜处理成具有预设间隔的图案; 在加工的牺牲膜的侧壁上形成由与牺牲膜和薄膜不同的材料制成的侧壁间隔物; 去除加工的牺牲膜; 以及通过使用侧壁间隔件作为掩模来处理薄膜。
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公开(公告)号：US20100112496A1
公开(公告)日：2010-05-06
申请号：US12441007
申请日：2008-06-06
IPC分类号： G03F7/20
CPC分类号： H01L21/3086 , G03F7/40 , H01L21/02164 , H01L21/02219 , H01L21/02274 , H01L21/3088 , H01L21/31608
摘要： A patterning method comprises a step for forming a first film on a substrate, a step for forming a multilayer film including a resist film on the first film, a step for patterning the resist film by photolithography to form a patterned resist film having a predetermined pattern, a step for forming an silicon oxide film different from the first film on the patterned resist film and the first film by supplying a first gas containing an organic silicon and a second gas containing an activated oxygen species alternately to the substrate, a step for etching the silicon oxide film to form a sidewall spacer on the sidewall of the patterned resist film, a step for removing the patterned resist film, and a step for processing the first film by using the sidewall spacer as a mask.
摘要翻译： 图案化方法包括在基板上形成第一膜的步骤，用于在第一膜上形成包括抗蚀剂膜的多层膜的步骤，通过光刻图案化抗蚀剂膜以形成具有预定图案的图案化抗蚀剂膜的步骤 通过将含有有机硅和含有活性氧的第二气体的第一气体交替地供给到基板上，在图案化的抗蚀剂膜和第一膜上形成与第一膜不同的氧化硅膜的步骤，蚀刻步骤 氧化硅膜在图案化的抗蚀剂膜的侧壁上形成侧壁间隔物，去除图案化的抗蚀剂膜的步骤，以及通过使用侧壁间隔物作为掩模来处理第一膜的步骤。
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公开(公告)号：US20070167028A1
公开(公告)日：2007-07-19
申请号：US11623483
申请日：2007-01-16
申请人： Pao-Hwa CHOU , Kazuhide Hasebe
发明人： Pao-Hwa CHOU , Kazuhide Hasebe
IPC分类号： H01L21/31
CPC分类号： H01L21/0228 , C23C16/36 , C23C16/452 , C23C16/45531 , C23C16/45546 , H01L21/02167 , H01L21/02211 , H01L21/3148 , H01L21/318
摘要： An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding gas, and a third process gas containing a carbon hydride gas. This method includes repeatedly performing supply of the first process gas to the process field, supply of the second process gas to the process field, and supply of the third process gas to the process field. The supply of the third process gas includes an excitation period of supplying the third process gas to the process field while exciting the third process gas by an exciting mechanism.
摘要翻译： 通过CVD在靶基板上形成绝缘膜，在选择性地供给包含硅烷族气体的第一工艺气体，含有氮化气体的第二工艺气体和含有碳氢化合物气体的第三工艺气体的工艺领域 。 该方法包括重复地向处理区域供应第一处理气体，向处理区域供应第二处理气体，以及向处理区域供应第三处理气体。 第三处理气体的供给包括通过激励机构激励第三处理气体的向处理场供给第三处理气体的激励期间。
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公开(公告)号：US08383522B2
公开(公告)日：2013-02-26
申请号：US13154728
申请日：2011-06-07
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： G03F7/405 , G03F7/0035 , H01L21/02164 , H01L21/0228 , H01L21/0271 , H01L21/0337 , H01L21/31144 , H01L21/32139
摘要： There is provided a micro pattern forming method including forming a thin film on a substrate; forming a film serving as a mask when processing the thin film; processing the film serving as a mask into a pattern including lines having a preset pitch; trimming the pattern including the lines; and forming an oxide film on the pattern including the lines and on the thin film by alternately supplying a source gas and an activated oxygen species. Here, the process of trimming the pattern and the process of forming an oxide film are consecutively performed in a film forming apparatus configured to form the oxide film.
摘要翻译： 提供了一种微图案形成方法，包括在基板上形成薄膜; 在加工薄膜时形成用作掩模的膜; 将作为掩模的胶片处理成包括具有预设间距的线的图案; 修剪包括线条的图案; 并且通过交替地供给源气体和活性氧物质，在包括线条的图案和薄膜上形成氧化膜。 这里，在构成为形成氧化膜的成膜装置中连续进行修整图案的修整和形成氧化膜的工序。
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16.发明授权Film formation apparatus for semiconductor process and method for using the same 有权用于半导体工艺的成膜装置及其使用方法公开(公告)号：US08025931B2
公开(公告)日：2011-09-27
申请号：US11822979
申请日：2007-07-11
申请人： Pao-Hwa Chou , Kazuhide Hasebe
发明人： Pao-Hwa Chou , Kazuhide Hasebe
IPC分类号： C23C16/00
CPC分类号： C23C16/452 , C23C16/345 , C23C16/4405
摘要： A method for using a film formation apparatus performs a first film formation process, while supplying a first film formation gas into a process field inside a process container, thereby forming a first thin film on a first target substrate inside the process field. After unloading the first target substrate from the process container, the method performs a cleaning process of an interior of the process container, while supplying a cleaning gas into the process field, and generating plasma of the cleaning gas by an exciting mechanism. Then, the method performs a second film formation process, while supplying a second film formation gas into the process field, thereby forming a second thin film on a target substrate inside the process field. The second film formation process is a plasma film formation process that generates plasma of the second film formation gas by the exciting mechanism.
摘要翻译： 使用成膜装置的方法进行第一成膜处理，同时将第一成膜气体供给到处理容器内的处理场中，从而在处理场内的第一靶基板上形成第一薄膜。 在从处理容器卸载第一目标基板之后，该方法对处理容器的内部执行清洁处理，同时向处理区域供应清洁气体，并通过激励机构产生清洁气体的等离子体。 然后，该方法进行第二成膜工艺，同时将第二成膜气体供应到工艺场中，从而在工艺场内的目标衬底上形成第二薄膜。 第二成膜工艺是通过激发机构产生第二成膜气体的等离子体的等离子体膜形成工艺。
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公开(公告)号：US07964241B2
公开(公告)日：2011-06-21
申请号：US11892948
申请日：2007-08-28
IPC分类号： C23C16/00
CPC分类号： C23C16/45525 , C03C17/225 , C03C2217/281 , C03C2217/282 , C03C2217/283 , C03C2218/152 , C23C16/30 , C23C16/45542 , C23C16/45546 , C23C16/45578
摘要： An insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding gas or oxynitriding gas, a third process gas containing a boron-containing gas, and a fourth process gas containing a carbon hydride gas. A first step performs supply of the first process gas and a preceding gas, which is one of the third and fourth process gases, while stopping supply of the second process gas and a succeeding gas, which is the other of the third and fourth process gases. A second step performs supply of the succeeding gas, while stopping supply of the second process gas and the preceding gas. A third step performs supply of the second process gas while stopping supply of the first process gas.
摘要翻译： 通过CVD在目标基板上形成绝缘膜，在选择性地供给包含硅烷族气体的第一工艺气体，含有氮化气体或氮氧化气体的第二工艺气体的工艺领域中，含有硼的第三工艺气体 和含有碳氢化合物气体的第四工艺气体。 第一步骤是在停止供给第二处理气体的第一处理气体和作为第三和第四处理气体之一的前一个气体的供给的同时，提供作为第三和第四处理气体中的另一个的后续气体 。 第二步骤在停止第二处理气体和前一个气体的供给的同时，进行后续气体的供给。 第三步骤在停止供应第一处理气体的同时进行第二处理气体的供应。
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公开(公告)号：US20100130015A1
公开(公告)日：2010-05-27
申请号：US12441754
申请日：2008-06-06
IPC分类号： H01L21/32
CPC分类号： G03F7/405 , G03F7/0035 , H01L21/02164 , H01L21/0228 , H01L21/0271 , H01L21/0337 , H01L21/31144 , H01L21/32139
摘要： Disclosed is a patterning method including: forming a first film on a substrate; forming a first resist film on the first film; processing the first resist film into a first resist pattern having a preset pitch by photolithography; forming a silicon oxide film on the first resist pattern and the first film by alternately supplying a first gas containing organic silicon and a second gas containing an activated oxygen species to the substrate; forming a second resist film on the silicon oxide film; processing the second resist film into a second resist pattern having a preset pitch by the photolithography; and processing the first film by using the first resist pattern and the second resist pattern as a mask.
摘要翻译： 公开了一种图案化方法，包括：在基板上形成第一膜; 在第一膜上形成第一抗蚀剂膜; 通过光刻将第一抗蚀剂膜加工成具有预设间距的第一抗蚀剂图案; 通过向所述基板交替地供给含有有机硅的第一气体和含有活性氧的第二气体，在所述第一抗蚀剂图案和所述第一膜上形成氧化硅膜; 在氧化硅膜上形成第二抗蚀剂膜; 通过光刻将第二抗蚀剂膜加工成具有预设间距的第二抗蚀剂图案; 以及通过使用第一抗蚀剂图案和第二抗蚀剂图案作为掩模来处理第一膜。
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公开(公告)号：US20090191722A1
公开(公告)日：2009-07-30
申请号：US12320018
申请日：2009-01-14
CPC分类号： H01L21/3185 , C23C16/345 , C23C16/45542
摘要： A film formation method is used for forming a silicon nitride film on a target substrate by repeating a plasma cycle and a non-plasma cycle a plurality of times, in a process field configured to be selectively supplied with a first process gas containing a silane family gas and a second process gas containing a nitriding gas and communicating with an exciting mechanism for exciting the second process gas to be supplied. The method includes obtaining a relation formula or relation table that represents relationship of a cycle mixture manner of the plasma cycle and the non-plasma cycle relative to a film quality factor of the silicon nitride film; determining a specific manner of the cycle mixture manner based on a target value of the film quality factor with reference to the relation formula or relation table; and arranging the film formation process in accordance with the specific manner.
摘要翻译： 使用成膜方法在目标衬底上形成氮化硅膜，通过重复等离子体循环和非等离子体循环多次，在被配置为选择性地供给包含硅烷族的第一工艺气体的工艺过程中 气体和含有氮化气体的第二工艺气体，并与用于激发待供应的第二工艺气体的激励机构连通。 该方法包括获得表示等离子体循环与非等离子体循环的循环混合方式相对于氮化硅膜的膜质量因子的关系的关系式或关系表; 参照关系公式或关系表，基于电影品质因子的目标值确定循环混合方式的具体方式; 并根据具体方式布置成膜处理。
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公开(公告)号：US07300885B2
公开(公告)日：2007-11-27
申请号：US11166073
申请日：2005-06-27
申请人： Kazuhide Hasebe , Pao-Hwa Chou
发明人： Kazuhide Hasebe , Pao-Hwa Chou
IPC分类号： H01L21/31
CPC分类号： C23C16/45578 , C23C16/345 , C23C16/452 , C23C16/45523 , C23C16/45525 , C23C16/45527 , C23C16/45542 , C23C16/45546 , H01J37/3244 , H01J2237/3321 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/0228 , H01L21/3145 , H01L21/3185
摘要： A film formation method for a semiconductor process is arranged to form a thin film on a target substrate by CVD, while supplying a first process gas for film formation and a second process gas for reacting with the first process gas to a process field accommodating the target substrate. The method alternately includes first to fourth steps. The first step performs supply of the first and second process gases to the process field. The second step stops supply of the first and second process gases to the process field. The third step performs supply of the second process gas to the process field while stopping supply of the first process gas to the process field. The fourth step stops supply of the first and second process gases to the process field.
摘要翻译： 半导体工艺的成膜方法被布置成通过CVD在目标衬底上形成薄膜，同时提供用于成膜的第一工艺气体和用于与第一工艺气体反应的第二工艺气体到容纳靶的工艺场 基质。 该方法交替地包括第一至第四步骤。 第一步进行第一和第二工艺气体的供应。 第二步停止向工艺场供应第一和第二工艺气体。 第三步骤在停止向处理场供应第一处理气体的同时，向处理区域供应第二处理气体。 第四步骤停止将第一和第二工艺气体供应到工艺现场。
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