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26 条记录 (耗时 0.054 秒)

    UHF/VHF plasma for use in forming integrated circuit structures on semiconductor wafers
    13.
    发明授权
    UHF/VHF plasma for use in forming integrated circuit structures on semiconductor wafers 失效
    UHF / VHF等离子体，用于在半导体晶片上形成集成电路结构

    公开(公告)号：US5300460A

    公开(公告)日：1994-04-05

    申请号：US32744

    申请日：1993-03-16

    申请人： Kenneth S. Collins ,  Craig A. Roderick ,  Chan-Lon Yang ,  David N. K. Wang ,  Dan Maydan

    发明人： Kenneth S. Collins ,  Craig A. Roderick ,  Chan-Lon Yang ,  David N. K. Wang ,  Dan Maydan

    IPC分类号： C23C16/509 ,  H01J37/32 ,  H05H1/46 ,  H01L21/00 ,  H01L21/02 ,  H01L21/22 ,  H01L21/265

    CPC分类号： H01J37/32174 ,  C23C16/509 ,  H01J37/32082 ,  H05H1/46

    摘要： An improved method of fabricating integrated circuit structures on semiconductor wafers using a plasma-assisted process is disclosed wherein the plasma is generated by a VHF/UHF power source at a frequency ranging from about 50 to about 800 MHz. Low pressure plasma-assisted etching or deposition processes, i.e., processes may be carried out within a pressure range not exceeding about 500 milliTorr; with a ratio of anode to cathode area of from about 2:1 to about 20:1, and an electrode spacing of from about 5 cm. to about 30 cm. High pressure plasma-assisted etching or deposition processes, i.e., processes may be carried out with a pressure ranging from over 500 milliTorr up to 50 Torr or higher; with an anode to cathode electrode spacing of less than about 5 cm. By carrying out plasma-assisted processes using plasma operated within a range of from about 50 to about 800 MHz, the electrode sheath voltages are maintained sufficiently low, so as to avoid damage to structures on the wafer, yet sufficiently high to preferably permit initiation of the processes without the need for supplemental power sources. Operating in this frequency range may also result in reduction or elimination of microloading effects.

    摘要翻译： 公开了使用等离子体辅助方法制造半导体晶片上的集成电路结构的改进方法，其中等离子体由VHF / UHF电源以约50至约800MHz的频率产生。 低压等离子体辅助蚀刻或沉积工艺，即工艺可以在不超过约500毫托的压力范围内进行; 阳极与阴极面积的比例为约2:1至约20:1，电极间距约为5cm。 到约30厘米。 高压等离子体辅助蚀刻或沉积工艺，即工艺可以在500毫乇至50乇以上的压力下进行; 阳极至阴极间距小于约5厘米。 通过使用在约50至约800MHz的范围内操作的等离子体等离子体辅助处理，电极护套电压保持足够低，以避免损坏晶片上的结构，但足够高以优选允许引发 该过程无需补充电源。 在该频率范围内工作也可能导致微载物效应的降低或消除。

    VHF/UHF reactor system
    14.
    发明授权
    VHF/UHF reactor system 失效
    VHF / UHF反应堆系统

    公开(公告)号：US5210466A

    公开(公告)日：1993-05-11

    申请号：US852826

    申请日：1992-03-13

    申请人： Kenneth S. Collins ,  Craig A. Roderick ,  Chan-Lon Yang ,  David N. K. Wang ,  Dan Maydan

    发明人： Kenneth S. Collins ,  Craig A. Roderick ,  Chan-Lon Yang ,  David N. K. Wang ,  Dan Maydan

    IPC分类号： C23C16/509 ,  H01J37/32 ,  H05H1/46

    CPC分类号： H01J37/32174 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/32091 ,  H05H1/46 ,  H05K2201/10015 ,  H05K2201/10689

    摘要： A plasma processing reactor is disclosed which incorporates an integral co-axial transmission line structure that effects low loss, very short transmission line coupling of ac power to the plasma chamber and therefore permits the effective use of VHF/UHF frequencies for generating a plasma. The use of VHF/UHF frequencies within the range 50-800 megahertz provides commercially viable processing rates (separate and simultaneous etching and deposition) and substantial reduction in sheath voltages compared to conventional frequencies such as 13.56 MHz. As a result, the probability of damaging electrically sensitive small geometry devices is reduced.

    摘要翻译： 公开了一种等离子体处理反应器，其包括整体的同轴传输线结构，其将低功率损耗，非常短的传输线耦合到等离子体室，因此允许有效地使用VHF / UHF频率来产生等离子体。 在常规频率（如13.56 MHz）下，VHF / UHF频率在50-800兆赫兹范围内的使用提供了商业上可行的处理速率（分离和同步蚀刻和沉积）和皮套电压的显着降低。 结果，减少了电敏感小型几何装置的损坏概率。

    Electrostatic chuck usable in high density plasma
    15.
    发明授权
    Electrostatic chuck usable in high density plasma 失效
    静电吸盘可用于高密度等离子体

    公开(公告)号：US5583737A

    公开(公告)日：1996-12-10

    申请号：US452351

    申请日：1995-05-26

    申请人： Kenneth S. Collins ,  John R. Trow ,  Joshua Chiu-Wing Tsui ,  Craig A. Roderick ,  Nicolas J. Bright ,  Jeffrey Marks ,  Tetsuya Ishikawa ,  Jian Ding

    发明人： Kenneth S. Collins ,  John R. Trow ,  Joshua Chiu-Wing Tsui ,  Craig A. Roderick ,  Nicolas J. Bright ,  Jeffrey Marks ,  Tetsuya Ishikawa ,  Jian Ding

    IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/683 ,  H02N13/00

    CPC分类号： H01L21/6833 ,  H01L21/6831

    摘要： An electrostatic chuck for holding a wafer in a plasma processing chamber, the chuck including a pedestal having a top surface, an internal manifold for carrying a cooling gas, and a first plurality of holes leading from the internal manifold toward said top surface; and a dielectric layer on the top surface of the pedestal. The dielectric layer has a top side and second plurality of holes, each of which is aligned with a different one of the holes of the first plurality of holes in the pedestal. The first and second holes form a plurality of passages extending from the internal manifold to the top side of the dielectric layer and through which the cooling gas is supplied to the backside of the wafer. Each of the first holes and the second hole aligned therewith form a different one of the plurality of passages. The passages are concentrated in regions of the dielectric layer that are in proximity to regions of higher leakage of cooling gas when the wafer is held against the electrostatic chuck by an electrostatic force.

    摘要翻译： 一种用于将晶片保持在等离子体处理室中的静电卡盘，所述卡盘包括具有顶表面的基座，用于承载冷却气体的内部歧管以及从所述内部歧管向所述顶部表面引导的第一多个孔; 以及在基座的顶表面上的介电层。 电介质层具有顶侧和第二多个孔，每个孔与基座中的第一多个孔的不同孔中的一个对准。 第一和第二孔形成从内部歧管延伸到电介质层的顶侧的多个通道，并且冷却气体通过该通道供应到晶片的背面。 与其对准的第一孔和第二孔中的每一个形成多个通道中的不同的一个。 当晶片通过静电力固定在静电卡盘上时，通道集中在电介质层的靠近冷却气体泄漏较高区域的区域中。

    Variable RF power splitter
    18.
    发明授权
    Variable RF power splitter 失效
    可变RF功率分配器

    公开(公告)号：US5349313A

    公开(公告)日：1994-09-20

    申请号：US140338

    申请日：1993-10-22

    申请人： Kenneth S. Collins ,  John R. Trow ,  Craig A. Roderick

    发明人： Kenneth S. Collins ,  John R. Trow ,  Craig A. Roderick

    IPC分类号： H03H7/48 ,  H03H11/30 ,  H03H7/38

    CPC分类号： H03H7/48 ,  H01F2029/143

    摘要： A variable RF power splitter including three serially connected inductors (14, 15, 16) powered by an RF power source (11, 12). Two loads (17, 18), between which the RF power is to be split, are connected to ground from two different points in the inductance string. A variable reactance (19) connected to ground from another point in the inductance string controls the RF power splitting.

    摘要翻译： 一种可变RF功率分配器，包括由RF电源（11,12）供电的三个串联的电感器（14,15,16）。 RF功率要分开的两个负载（17,18）从电感串中的两个不同点连接到地。 从电感串中的另一点连接到地的可变电抗（19）控制RF功率分配。