公开(公告)号：US20150115286A1

公开(公告)日：2015-04-30

申请号：US14400365

申请日：2013-06-06

申请人： Masahiro SUGIMOTO ,  Hidefumi TAKAYA ,  Akitaka SOENO ,  Jun MORIMOTO ,  DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Yuichi Takeuchi ,  Naohiro Suzuki ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Akitaka Soeno ,  Jun Morimoto ,  Narumasa Soejima ,  Yukihiko Watanabe

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L21/308 ,  H01L29/10 ,  H01L21/04 ,  H01L21/306 ,  H01L29/66 ,  H01L29/16

CPC分类号： H01L29/7811 ,  H01L21/046 ,  H01L21/0475 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/761 ,  H01L21/8213 ,  H01L29/0615 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/157 ,  H01L29/158 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7806 ,  H01L29/7813 ,  H01L29/861 ,  H01L29/872

摘要： An SiC semiconductor device has a p type region including a low concentration region and a high concentration region filled in a trench formed in a cell region. A p type column is provided by the low concentration region, and a p+ type deep layer is provided by the high concentration region. Thus, since a SJ structure can be made by the p type column and the n type column provided by the n type drift layer, an on-state resistance can be reduced. As a drain potential can be blocked by the p+ type deep layer, at turnoff, an electric field applied to the gate insulation film can be alleviated and thus breakage of the gate insulation film can be restricted. Therefore, the SiC semiconductor device can realize the reduction of the on-state resistance and the restriction of breakage of the gate insulation film.

摘要翻译： SiC半导体器件具有包含低浓度区域和填充在形成于单元区域的沟槽中的高浓度区域的p型区域。 由低浓度区域提供p型列，并且由高浓度区域提供p +型深层。 因此，由于可以通过由n型漂移层提供的p型列和n型列来形成SJ结构，所以可以降低导通电阻。 由于漏极电位可以被p +型深层阻挡，所以在关断时，施加到栅极绝缘膜的电场可以减轻，从而可以限制栅极绝缘膜的破裂。 因此，SiC半导体器件可以实现导通电阻的降低和栅极绝缘膜的破损的限制。

公开(公告)号：US08470672B2

公开(公告)日：2013-06-25

申请号：US13220756

申请日：2011-08-30

申请人： Takeshi Endo ,  Shinichiro Miyahara ,  Tomoo Morino ,  Masaki Konishi ,  Hirokazu Fujiwara ,  Jun Morimoto ,  Tsuyoshi Ishikawa ,  Takashi Katsuno ,  Yukihiko Watanabe

发明人： Takeshi Endo ,  Shinichiro Miyahara ,  Tomoo Morino ,  Masaki Konishi ,  Hirokazu Fujiwara ,  Jun Morimoto ,  Tsuyoshi Ishikawa ,  Takashi Katsuno ,  Yukihiko Watanabe

IPC分类号： H01L21/336 ,  H01L21/265

CPC分类号： H01L29/7813 ,  H01L21/30604 ,  H01L21/3065 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/66068

摘要： A method of manufacturing a semiconductor device includes forming a drift layer on a substrate; forming a base layer on the drift layer; forming a trench to penetrate the base layer and to reach the drift layer; rounding off a part of a shoulder corner and a part of a bottom corner of the trench; covering an inner wall of the trench with an organic film; implanting an impurity to a surface portion of the base layer; forming a source region by activating the implanted impurity; and removing the organic film after the source region is formed, in which the substrate, the drift layer, the base layer and the source region are made of silicon carbide, and the implanting and the activating of the impurity are performed under a condition that the trench is covered with the organic film.

摘要翻译： 制造半导体器件的方法包括在衬底上形成漂移层; 在漂移层上形成基层; 形成沟槽以穿透基层并到达漂移层; 将沟槽的一部分肩部角落和底角的一部分倒圆; 用有机膜覆盖沟槽的内壁; 将杂质注入基层的表面部分; 通过激活注入的杂质形成源区; 在形成源极区域之后除去有机膜，其中基板，漂移层，基极层和源极区域由碳化硅构成，并且杂质的注入和活化在 沟槽被有机膜覆盖。

公开(公告)号：US08436365B2

公开(公告)日：2013-05-07

申请号：US13031280

申请日：2011-02-21

申请人： Takeo Yamamoto ,  Takeshi Endo ,  Jun Morimoto ,  Hirokazu Fujiwara ,  Yukihiko Watanabe ,  Takashi Katsuno ,  Tsuyoshi Ishikawa

发明人： Takeo Yamamoto ,  Takeshi Endo ,  Jun Morimoto ,  Hirokazu Fujiwara ,  Yukihiko Watanabe ,  Takashi Katsuno ,  Tsuyoshi Ishikawa

IPC分类号： H01L29/16 ,  H01L29/47 ,  H01L29/872

CPC分类号： H01L29/47 ,  H01L21/0495 ,  H01L29/0619 ,  H01L29/063 ,  H01L29/1608 ,  H01L29/402 ,  H01L29/6606 ,  H01L29/872

摘要： A SiC semiconductor device having a Schottky barrier diode includes: a substrate made of SiC and having a first conductive type, wherein the substrate includes a main surface and a rear surface; a drift layer made of SiC and having the first conductive type, wherein the drift layer is disposed on the main surface of the substrate and has an impurity concentration lower than the substrate; a Schottky electrode disposed on the drift layer and has a Schottky contact with a surface of the drift layer; and an ohmic electrode disposed on the rear surface of the substrate. The Schottky electrode directly contacts the drift layer in such a manner that a lattice of the Schottky electrode is matched with a lattice of the drift layer.

摘要翻译： 具有肖特基势垒二极管的SiC半导体器件包括：由SiC制成并具有第一导电类型的衬底，其中所述衬底包括主表面和后表面; 由SiC制成并具有第一导电类型的漂移层，其中所述漂移层设置在所述衬底的主表面上并且具有低于所述衬底的杂质浓度; 肖特基电极，设置在漂移层上并与漂移层的表面具有肖特基接触; 以及设置在基板的后表面上的欧姆电极。 肖特基电极以使得肖特基电极的晶格与漂移层的晶格匹配的方式直接接触漂移层。

公开(公告)号：US20110204383A1

公开(公告)日：2011-08-25

申请号：US13031280

申请日：2011-02-21

申请人： Takeo YAMAMOTO ,  Takeshi Endo ,  Jun Morimoto ,  Hirokazu Fujiwara ,  Yukihiko Watanabe ,  Takashi Katsuno ,  Tsuyoshi Ishikawa

发明人： Takeo YAMAMOTO ,  Takeshi Endo ,  Jun Morimoto ,  Hirokazu Fujiwara ,  Yukihiko Watanabe ,  Takashi Katsuno ,  Tsuyoshi Ishikawa

IPC分类号： H01L29/24 ,  H01L21/329 ,  B82Y99/00 ,  B82Y40/00

CPC分类号： H01L29/47 ,  H01L21/0495 ,  H01L29/0619 ,  H01L29/063 ,  H01L29/1608 ,  H01L29/402 ,  H01L29/6606 ,  H01L29/872

摘要： A SiC semiconductor device having a Schottky barrier diode includes: a substrate made of SiC and having a first conductive type, wherein the substrate includes a main surface and a rear surface; a drift layer made of SiC and having the first conductive type, wherein the drift layer is disposed on the main surface of the substrate and has an impurity concentration lower than the substrate; a Schottky electrode disposed on the drift layer and has a Schottky contact with a surface of the drift layer; and an ohmic electrode disposed on the rear surface of the substrate. The Schottky electrode directly contacts the drift layer in such a manner that a lattice of the Schottky electrode is matched with a lattice of the drift layer.

摘要翻译： 具有肖特基势垒二极管的SiC半导体器件包括：由SiC制成并具有第一导电类型的衬底，其中所述衬底包括主表面和后表面; 由SiC制成并具有第一导电类型的漂移层，其中所述漂移层设置在所述衬底的主表面上并且具有低于所述衬底的杂质浓度; 肖特基电极，设置在漂移层上并与漂移层的表面具有肖特基接触; 以及设置在基板的后表面上的欧姆电极。 肖特基电极以使得肖特基电极的晶格与漂移层的晶格匹配的方式直接接触漂移层。

公开(公告)号：US08812062B2

公开(公告)日：2014-08-19

申请号：US11902450

申请日：2007-09-21

申请人： Yoshikazu Hata ,  Tomoko Honda ,  Satoru Honda ,  Nobuyoshi Kuroiwa ,  Masaomi Nakahata ,  Jun Morimoto ,  Koichi Sato ,  Akihiro Tsujimura ,  Makoto Tabata ,  Minoru Sakurai ,  Shoji Kato

发明人： Yoshikazu Hata ,  Tomoko Honda ,  Satoru Honda ,  Nobuyoshi Kuroiwa ,  Masaomi Nakahata ,  Jun Morimoto ,  Koichi Sato ,  Akihiro Tsujimura ,  Makoto Tabata ,  Minoru Sakurai ,  Shoji Kato

IPC分类号： H04M1/00

CPC分类号： H05K7/06 ,  H01Q1/22 ,  H01Q1/243 ,  H01Q1/40 ,  H01Q9/0407

摘要： An electronic apparatus includes: a first molded body; a second molded body which composes housing with the first molded body; a first conductive pattern provided in the housing; a second conductive pattern provided on an outer surface of the housing; and a first conductive member. The first conductive member passes through a gap of a mating face between the first molded body and the second molded body. The first conductive member connects the first conductive pattern and the second conductive pattern.

摘要翻译： 电子设备包括：第一成型体; 第二成型体，其与第一成型体构成壳体; 设置在所述壳体中的第一导电图案; 设置在所述壳体的外表面上的第二导电图案; 和第一导电构件。 第一导电构件穿过第一模制体和第二模制体之间的配合面的间隙。 第一导电构件连接第一导电图案和第二导电图案。

公开(公告)号：US08262267B2

公开(公告)日：2012-09-11

申请号：US12453516

申请日：2009-05-13

申请人： Tsuyoshi Tsuda ,  Jun Morimoto

发明人： Tsuyoshi Tsuda ,  Jun Morimoto

IPC分类号： B60Q1/26 ,  B60R1/12

CPC分类号： B60R1/1207 ,  B62J6/02

摘要： A lamp device-integrated rearview mirror 30 includes a mirror member 34 oriented toward the rear side of a vehicle body and a single bulb 40 provided in a housing 31 attached to the vehicle body. The lamp device-integrated rearview mirror may also include a reflecting member 35 configured to reflect the light emitted from the bulb 40 toward the rear side of the vehicle body and a reflector 36 configured to reflect the light toward the front side of the vehicle body. The reflecting member 35 may be provided on the rear side of a lens 32 attached to the housing 31 to transmit the irradiation light, and the reflector 36 may be provided inside the housing 31. The mirror member 34 may be fitted in the opening portion of the housing 31.

摘要翻译： 灯装置集成后视镜30包括朝向车体后侧定向的镜构件34和设置在安装在车身上的壳体31中的单个灯泡40。 灯装置集成后视镜还可以包括被配置为将从灯泡40发射的光朝向车体的后侧反射的反射部件35和被构造成将光反射到车身前侧的反射器36。 反射构件35可以设置在附接到壳体31的透镜32的后侧，以透射照射光，并且反射器36可以设置在壳体31的内部。反射镜构件34可以装配在 外壳31。

公开(公告)号：US08054240B2

公开(公告)日：2011-11-08

申请号：US11902448

申请日：2007-09-21

申请人： Tomoko Honda ,  Nobuyoshi Kuroiwa ,  Masaomi Nakahata ,  Jun Morimoto ,  Satoru Honda ,  Yoshikazu Hata ,  Koichi Sato ,  Akihiro Tsujimura ,  Makoto Tabata ,  Minoru Sakurai ,  Shoji Kato

发明人： Tomoko Honda ,  Nobuyoshi Kuroiwa ,  Masaomi Nakahata ,  Jun Morimoto ,  Satoru Honda ,  Yoshikazu Hata ,  Koichi Sato ,  Akihiro Tsujimura ,  Makoto Tabata ,  Minoru Sakurai ,  Shoji Kato

IPC分类号： H01Q1/24 ,  H01Q1/40

CPC分类号： H01Q9/40 ,  H01Q9/42 ,  H01Q21/28 ,  H05K1/0284 ,  H05K1/144 ,  H05K3/325 ,  H05K2201/048 ,  H05K2201/0999 ,  H05K2203/167

摘要： An electronic apparatus includes: a housing provided with a first conductive pattern; a substrate provided with a first wiring layer in a surface thereof and fixed to the housing; and a first conductive member connecting the first conductive pattern and the first wiring layer. The first conductive pattern extends onto an outer surface and an inner surface of the housing. The first conductive member is in contact with each of at least a part of the first conductive pattern extending onto the inner surface and an end of the first wiring layer. Alternatively, an electronic apparatus includes: a housing provided with a conductive pattern and having a through part in a frame portion thereof; and a substrate provided with a wiring layer on a surface thereof and having a protruding part and fixed to the housing. The protruding part and the through part are fit. The conductive pattern extends onto an outer surface of the housing and onto an inner surface of the through part. At least some of the conductive pattern extending onto the inner surface is in contact with an end of the wiring layer.

摘要翻译： 电子设备包括：具有第一导电图案的壳体; 基板，其在其表面上设置有第一布线层并固定到所述壳体; 以及连接第一导电图案和第一布线层的第一导电构件。 第一导电图案延伸到壳体的外表面和内表面上。 第一导电构件与延伸到第一布线层的内表面和端部的第一导电图案的至少一部分中的每一个接触。 或者，电子设备包括：壳体，设置有导电图案，并且在其框架部分中具有通孔部分; 以及在其表面上设置有布线层并且具有突出部并固定到壳体的基板。 突出部分和贯穿部分是合适的。 导电图案延伸到壳体的外表面上并延伸到通孔的内表面上。 延伸到内表面上的至少一些导电图案与布线层的端部接触。

公开(公告)号：US07623258B2

公开(公告)日：2009-11-24

申请号：US11181173

申请日：2005-07-13

申请人： Junichi Kajiwara ,  Kiyoshi Inoue ,  Jun Morimoto

发明人： Junichi Kajiwara ,  Kiyoshi Inoue ,  Jun Morimoto

IPC分类号： G06F3/12 ,  G06F15/173

CPC分类号： H04N1/00204 ,  H04N2201/001 ,  H04N2201/0034 ,  H04N2201/0039 ,  H04N2201/0094 ,  Y10S370/911

摘要： An expansion image processing board 6 (expansion information processing module) of the present invention, which is installable in a network printer 2 having an image processing board 5 (information processing module), includes: a second printer function control section 28 (expansion information processing section) which controls the network printer 2; and a router 31 (data relaying section) which relays data to the second printer function control section 28 or the image processing board 5. Therefore, the expansion image processing board 6 is capable of simply and efficiently extending a functionality of the network printer 2.

摘要翻译： 可安装在具有图像处理板5（信息处理模块）的网络打印机2中的本发明的扩展图像处理板6（扩展信息处理模块）包括：第二打印机功能控制部分28（扩展信息处理 部分），其控制网络打印机2; 以及将数据中继到第二打印机功能控制部28或图像处理板5的路由器31（数据中继部）。因此，扩展图像处理板6能够简单且有效地扩展网络打印机2的功能。

公开(公告)号：US20090020347A1

公开(公告)日：2009-01-22

申请号：US12166742

申请日：2008-07-02

申请人： Yoshiyuki Horii ,  Masamoto Ito ,  Shinji Furuta ,  Jun Morimoto ,  Shinji Kawasaki ,  Atsuko Niwano

发明人： Yoshiyuki Horii ,  Masamoto Ito ,  Shinji Furuta ,  Jun Morimoto ,  Shinji Kawasaki ,  Atsuko Niwano

IPC分类号： B60K1/00

CPC分类号： B62K5/027 ,  B62J35/00 ,  B62K2202/00 ,  B62K2204/00

摘要： A saddle seat type fuel-cell electric vehicle includes a body frame having a pair of right and left main frames connected at their front ends to a head pipe and extending downward therefrom and a pair of right and left under frames connected at their front ends to the head pipe and extending downward therefrom along the right and left main frames on the lower side thereof. A pair of hydrogen cylinders extend substantially vertically along the body frame between the front side of the head pipe and the front side of the front end portion of the footrest so as to interpose the body frame in the lateral direction of the vehicle. A fuel supply unit is provided in a space surrounded by the main frames and the under frames with the hydrogen cylinders being surrounded by a guard pipe connected to the main frames.

摘要翻译： 鞍座型燃料电池电动车辆包括：主体框架，其具有一对左右主框架，其前端连接到头管并从其向下延伸;以及一对在其前端连接的左右下框架至 头管并沿其下侧的左右主框架向下方延伸。 一对氢气缸沿着主体框架在头管的前侧和脚踏板的前端部的前侧之间基本上垂直地延伸，以便将主体框架插入车辆的横向方向。 燃料供给单元设置在由主框架和下框架围绕的空间中，氢气缸被连接到主框架的保护管围绕。

公开(公告)号：US20060098136A1

公开(公告)日：2006-05-11

申请号：US11311154

申请日：2005-12-20

申请人： Takayuki Masunaga ,  Fujio Takahashi ,  Jun Morimoto ,  Shinobu Oofuchi ,  Masahiro Yokota ,  Hisakazu Okamoto

发明人： Takayuki Masunaga ,  Fujio Takahashi ,  Jun Morimoto ,  Shinobu Oofuchi ,  Masahiro Yokota ,  Hisakazu Okamoto

IPC分类号： G02F1/1333

CPC分类号： H01J31/123 ,  G02F1/133308 ,  H01J11/10 ,  H01J2329/8625

摘要： A rectangular rear substrate which constitutes an envelope of an image display device is fitted with a reinforcing frame which reinforces the envelope. The reinforcing frame has a pair of first frame portions individually extending substantially parallel to long sides of the rear substrate and a pair of second frame portions extending substantially parallel to short sides of the rear substrate and connecting the first frame portions. Each of the second frame portions meets a relationship ΔH/H=13 to 33%, where H is a length of each long side of the rear substrate and ΔH is a distance between each short side of the rear substrate and each of the second frame portions.

摘要翻译： 构成图像显示装置的封套的矩形后基板装配有加固信封的加强框架。 加强框架具有大致平行于后基板的长边大致平行的一对第一框架部分和大致平行于后基板的短边延伸并连接第一框架部分的一对第二框架部分。 每个第二框架部分满足DeltaH / H = 13至33％的关系，其中H是后基板的每个长边的长度，DeltaH是后基板的每个短边与每个第二框架之间的距离 部分。