公开(公告)号：US20100258713A1

公开(公告)日：2010-10-14

申请号：US12668341

申请日：2008-02-19

申请人： Toyosei Takahashi ,  Rie Takayama ,  Mitsuo Sugino ,  Masakazu Kawata

发明人： Toyosei Takahashi ,  Rie Takayama ,  Mitsuo Sugino ,  Masakazu Kawata

IPC分类号： H01L31/0203 ,  B32B38/10 ,  H01L31/09

CPC分类号： H01L27/14618 ,  H01L27/14683 ,  H01L31/0203 ,  H01L2224/48091 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01077 ,  H01L2924/10253 ,  H01L2924/16195 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light receiving device 1 includes a support substrate 12 provided thereon with a photodetector 11 including a photodetecting portion 111 and a base substrate 112 on which the photodetecting portion 111 is placed; and a transparent substrate 13 disposed so as to oppose the face of the support substrate 12 on which the photodetector 11 is provided. Between the support substrate 12 and the transparent substrate 13, a frame portion 14 is provided so as to surround the photodetector 11. The frame portion 14 is a photo-curing adhesive, and directly adhered to the transparent substrate 13 and the support substrate 12. Such structure provides a light receiving device capable of exhibiting the desired performance, and a method of manufacturing such light receiving device can also be provided.

摘要翻译： 光接收装置1包括设置有光电检测器11的支撑基板12，该光检测器11包括受光部分111和放置有光电检测部分111的基板112; 以及设置成与设置有光电检测器11的支撑基板12的表面相对的透明基板13。 在支撑基板12和透明基板13之间设置有围绕光电检测器11的框架部分14.框架部分14是光固化粘合剂，并且直接粘附到透明基板13和支撑基板12上。 这种结构提供能够表现出期望性能的光接收装置，并且还可以提供制造这种光接收装置的方法。

公开(公告)号：US20100213597A1

公开(公告)日：2010-08-26

申请号：US12682649

申请日：2008-10-15

申请人： Mitsuo Sugino ,  Hideki Hara ,  Toru Meura

发明人： Mitsuo Sugino ,  Hideki Hara ,  Toru Meura

IPC分类号： H01L23/48 ,  H01L23/31

CPC分类号： H01L23/3735 ,  H01L23/49833 ,  H01L23/5389 ,  H01L2924/0002 ,  H05K1/0271 ,  H05K3/284 ,  H05K2203/1322 ,  H01L2924/00

摘要： A semiconductor element mounting board includes: aboard having surfaces; a semiconductor element mounted on one of the surfaces of the board; a first layer into which the semiconductor element is embedded, the first layer being provided on the one surface of the board; a second layer provided on the other surface of the board, the second layer being constituted from the same material as that of the first layer, the constituent material of the second layer having the same composition ratio as that of the constituent material of the first layer; and surface layers provided on the first and second layers, respectively, each of the surface layers being formed from at least a single layer. In such a semiconductor element mounting board, each of the surface layers has rigidity higher than that of each of the first and second layers. It is preferred that in the case where a Young's modulus of each surface layer at 25° C. is defined as X GPa and a Young's modulus of the first layer at 25° C. is defined as Y GPa, the X and the Y satisfy a relation of 0.5≦X−Y≦13.

摘要翻译： 半导体元件安装板包括：具有表面; 安装在所述板的一个表面上的半导体元件; 第一层，半导体元件被嵌入其中，第一层设置在板的一个表面上; 设置在所述板的另一个表面上的第二层，所述第二层由与所述第一层相同的材料构成，所述第二层的构成材料具有与所述第一层的构成材料相同的组成比 ; 以及分别设置在第一和第二层上的表面层，每个表面层由至少单层形成。 在这样的半导体元件安装基板中，每个表面层的刚性比第一和第二层的刚性要高。 优选的是，将25℃下的各表面层的杨氏模量定义为X GPa，在25℃下将第一层的杨氏模量定义为YGPa的情况下，X和Y满足 关系为0.5＆nlE; X-Y＆nlE; 13。

公开(公告)号：US07759794B2

公开(公告)日：2010-07-20

申请号：US11793816

申请日：2006-03-09

申请人： Mitsuo Sugino ,  Takeshi Hosomi ,  Yushi Sakamoto

发明人： Mitsuo Sugino ,  Takeshi Hosomi ,  Yushi Sakamoto

IPC分类号： H01L23/48 ,  H01L23/29

CPC分类号： H01L23/5329 ,  H01L21/563 ,  H01L23/14 ,  H01L23/5222 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L2224/05085 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/16225 ,  H01L2224/2929 ,  H01L2224/29386 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01059 ,  H01L2924/01061 ,  H01L2924/01073 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/01083 ,  H01L2924/00

摘要： A semiconductor device 100 has a BGA substrate 110, a semiconductor chip 101, a bump 106 and an underfill 108 filling the periphery of the bump. An interlayer dielectric 104 in the semiconductor chip 101 contains a low dielectric constant film. The bump 106 is comprised of a lead-free solder. The underfill 108 is comprised of a resin material having an elastic modulus of 150 MPa to 800 MPa both inclusive, and a linear expansion coefficient of the BGA substrate 110 in an in-plane direction of the substrate is less than 14 ppm/° C.

摘要翻译： 半导体器件100具有填充凸起周边的BGA衬底110，半导体芯片101，凸块106和底部填充108。 半导体芯片101中的层间电介质104包含低介电常数膜。 凸块106由无铅焊料构成。 底部填充物108由弹性模量为150MPa〜800MPa的树脂材料构成，BGA基板110的面内方向的线膨胀系数小于14ppm /℃。

公开(公告)号：US20090321919A1

公开(公告)日：2009-12-31

申请号：US11885404

申请日：2007-04-20

申请人： Mitsuo Sugino ,  Takeshi Hosomi ,  Masahiro Wada ,  Masataka Arai

发明人： Mitsuo Sugino ,  Takeshi Hosomi ,  Masahiro Wada ,  Masataka Arai

IPC分类号： H01L23/488 ,  H01L23/48

CPC分类号： H01L21/563 ,  H01L21/6835 ,  H01L23/293 ,  H01L24/16 ,  H01L2221/68345 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2224/0401

摘要： The semiconductor device 1 includes a substrate 3, a semiconductor chip 4 mounted on the substrate 3, the substrate 3, a bump 5 connecting the substrate 3 and the semiconductor chip 4, and an underfill 6 filling in around the bump 5. In the case of a bump 5 composed of a high-melting-point solder having a melting point of 230° C. or more, the underfill 6 is composed of a resin material having an elastic modulus in the range of 30 MPa to 3000 MPa. In the case of a bump 5 composed of a lead-free solder, the underfill 6 is composed of a resin material having an elastic modulus in the range of 150 MPa to 800 MPa. An insulating layer 311 of buildup layers 31 of the substrate 3 has a linear expansion coefficient of 35 ppm/° C. or less in the in-plane direction of the substrate at temperatures in the range of 25° C. to the glass transition temperature.

摘要翻译： 半导体器件1包括基板3，安装在基板3上的半导体芯片4，基板3，连接基板3和半导体芯片4的凸块5以及填充在凸块5周围的底部填充6。 由熔点为230℃以上的高熔点焊料构成的凸块5由底部填充材料6构成，其弹性模量为30MPa〜3000MPa的范围。 在由无铅焊料构成的突起5的情况下，底部填充物6由弹性模量在150MPa〜800MPa的范围内的树脂材料构成。 基板3的堆积层31的绝缘层311在25℃的温度范围内的基板的面内方向的线膨胀系数为35ppm /℃以下，玻璃化转变温度 。

公开(公告)号：US08034651B2

公开(公告)日：2011-10-11

申请号：US12668341

申请日：2008-02-19

申请人： Toyosei Takahashi ,  Rie Takayama ,  Mitsuo Sugino ,  Masakazu Kawata

发明人： Toyosei Takahashi ,  Rie Takayama ,  Mitsuo Sugino ,  Masakazu Kawata

IPC分类号： H01L21/00 ,  H01L21/02

CPC分类号： H01L27/14618 ,  H01L27/14683 ,  H01L31/0203 ,  H01L2224/48091 ,  H01L2924/01004 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01077 ,  H01L2924/10253 ,  H01L2924/16195 ,  H01L2924/00014 ,  H01L2924/00

摘要： A light receiving device 1 includes a support substrate 12 provided thereon with a photodetector 11 including a photodetecting portion 111 and a base substrate 112 on which the photodetecting portion 111 is placed; and a transparent substrate 13 disposed so as to oppose the face of the support substrate 12 on which the photodetector 11 is provided. Between the support substrate 12 and the transparent substrate 13, a frame portion 14 is provided so as to surround the photodetector 11. The frame portion 14 is a photo-curing adhesive, and directly adhered to the transparent substrate 13 and the support substrate 12. Such structure provides a light receiving device capable of exhibiting the desired performance, and a method of manufacturing such light receiving device can also be provided.

摘要翻译： 光接收装置1包括设置有光电检测器11的支撑基板12，该光检测器11包括受光部分111和放置有光电检测部分111的基板112; 以及设置成与设置有光电检测器11的支撑基板12的表面相对的透明基板13。 在支撑基板12和透明基板13之间设置有围绕光电检测器11的框架部分14.框架部分14是光固化粘合剂，并且直接粘附到透明基板13和支撑基板12上。 这种结构提供能够表现出期望性能的光接收装置，并且还可以提供制造这种光接收装置的方法。

公开(公告)号：US20110084409A1

公开(公告)日：2011-04-14

申请号：US12997376

申请日：2009-06-03

申请人： Mitsuo Sugino ,  Hideki Hara ,  Toru Meura

发明人： Mitsuo Sugino ,  Hideki Hara ,  Toru Meura

IPC分类号： H01L23/488

CPC分类号： H01L23/5389 ,  H01L21/56 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/562 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/29366 ,  H01L2224/29386 ,  H01L2224/8385 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01059 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/1301 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/3511 ,  H05K1/0271 ,  H05K3/284 ,  H05K3/305 ,  H05K2201/068 ,  H05K2201/10674 ,  H05K2203/1322 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/05341 ,  H01L2924/05442 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

摘要： A semiconductor element mounting board includes: a board having surfaces; a semiconductor element provided at a side of one of the surfaces of the board; a bonding agent layer through which the board and the semiconductor element are bonded together, the bonding agent layer having a storage modulus at 25° C. of 5 to 1,000 MPa; a first layer into which the semiconductor element is embedded, the first layer provided on the one surface of the board; a second layer provided on the other surface of the board, the second layer being constituted from the same material as that of the first layer, the constituent material of the second layer having the same composition ratio as that of the constituent material of the first layer; and surface layers provided on the first and second layers, respectively, each of the surface layers being formed from at least a single layer. In the semiconductor element mounting board, a coefficient of thermal expansion of each surface layer in an inplane direction thereof measured based on JIS C 6481 at a temperature of 20° C. to a glass-transition temperature Tga° C., which is measured based on JIS C 6481, is 40 ppm/° C. or lower.

摘要翻译： 半导体元件安装板包括：具有表面的板; 设置在所述板的一个表面的一侧的半导体元件; 将基板和半导体元件结合在一起的接合剂层，25℃下的储能模量为5〜1000MPa的接合剂层; 第一层，半导体元件被嵌入其中，第一层设置在板的一个表面上; 设置在所述板的另一个表面上的第二层，所述第二层由与所述第一层相同的材料构成，所述第二层的构成材料具有与所述第一层的构成材料相同的组成比 ; 以及分别设置在第一和第二层上的表面层，每个表面层由至少单层形成。 在半导体元件安装基板中，基于JIS C 6481在20℃的温度下测定各面层的面内方向的热膨胀系数至玻璃化转变温度Tga°C 在JIS C 6481中为40ppm /℃以下。

公开(公告)号：US20080042272A1

公开(公告)日：2008-02-21

申请号：US11793816

申请日：2006-03-09

申请人： Mitsuo Sugino ,  Takeshi Hosomi ,  Yushi Sakamoto

发明人： Mitsuo Sugino ,  Takeshi Hosomi ,  Yushi Sakamoto

IPC分类号： H01L23/52

CPC分类号： H01L23/5329 ,  H01L21/563 ,  H01L23/14 ,  H01L23/5222 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/32 ,  H01L24/73 ,  H01L24/81 ,  H01L2224/05085 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/16225 ,  H01L2224/2929 ,  H01L2224/29386 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01059 ,  H01L2924/01061 ,  H01L2924/01073 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/3511 ,  H01L2924/00012 ,  H01L2924/01083 ,  H01L2924/00

摘要： A semiconductor device 100 has a BGA substrate 110, a semiconductor chip 101, a bump 106 and an underfill 108 filling the periphery of the bump. An interlayer dielectric 104 in the semiconductor chip 101 contains a low dielectric constant film. The bump 106 is comprised of a lead-free solder. The underfill 108 is comprised of a resin material having an elastic modulus of 150 MPa to 800 MPa both inclusive, and a linear expansion coefficient of the BGA substrate 110 in an in-plane direction of the substrate is less than 14 ppm/° C.

摘要翻译： 半导体器件100具有填充凸起周边的BGA衬底110，半导体芯片101，凸块106和底部填充108。 半导体芯片101中的层间电介质104包含低介电常数膜。 凸块106由无铅焊料构成。 底部填充物108由弹性模量为150MPa〜800MPa的树脂材料构成，BGA基板110的面内方向的线膨胀系数小于14ppm /℃。

公开(公告)号：US08629556B2

公开(公告)日：2014-01-14

申请号：US11885404

申请日：2007-04-20

申请人： Mitsuo Sugino ,  Takeshi Hosomi ,  Masahiro Wada ,  Masataka Arai

发明人： Mitsuo Sugino ,  Takeshi Hosomi ,  Masahiro Wada ,  Masataka Arai

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L21/563 ,  H01L21/6835 ,  H01L23/293 ,  H01L24/16 ,  H01L2221/68345 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/73203 ,  H01L2224/73204 ,  H01L2924/00011 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01087 ,  H01L2924/01322 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/30105 ,  H01L2924/00 ,  H01L2224/0401

摘要： The semiconductor device 1 includes a substrate 3, a semiconductor chip 4 mounted on the substrate 3, the substrate 3, a bump 5 connecting the substrate 3 and the semiconductor chip 4, and an underfill 6 filling in around the bump 5. In the case of a bump 5 composed of a high-melting-point solder having a melting point of 230° C. or more, the underfill 6 is composed of a resin material having an elastic modulus in the range of 30 MPa to 3000 MPa. In the case of a bump 5 composed of a lead-free solder, the underfill 6 is composed of a resin material having an elastic modulus in the range of 150 MPa to 800 MPa. An insulating layer 311 of buildup layers 31 of the substrate 3 has a linear expansion coefficient of 35 ppm/° C. or less in the in-plane direction of the substrate at temperatures in the range of 25° C. to the glass transition temperature.

摘要翻译： 半导体器件1包括基板3，安装在基板3上的半导体芯片4，基板3，连接基板3和半导体芯片4的凸块5以及填充在凸块5周围的底部填充6。 由熔点为230℃以上的高熔点焊料构成的凸块5由底部填充材料6构成，其弹性模量为30MPa〜3000MPa的范围。 在由无铅焊料构成的突起5的情况下，底部填充物6由弹性模量在150MPa〜800MPa的范围内的树脂材料构成。 基板3的堆积层31的绝缘层311在25℃的温度范围内的基板的面内方向的线膨胀系数为35ppm /℃以下，玻璃化转变温度 。

公开(公告)号：US08598719B2

公开(公告)日：2013-12-03

申请号：US12997376

申请日：2009-06-03

申请人： Mitsuo Sugino ,  Hideki Hara ,  Toru Meura

发明人： Mitsuo Sugino ,  Hideki Hara ,  Toru Meura

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/5389 ,  H01L21/56 ,  H01L23/3121 ,  H01L23/3135 ,  H01L23/562 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/29101 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/29366 ,  H01L2224/29386 ,  H01L2224/8385 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01059 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/014 ,  H01L2924/04953 ,  H01L2924/0665 ,  H01L2924/07802 ,  H01L2924/1301 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/3511 ,  H05K1/0271 ,  H05K3/284 ,  H05K3/305 ,  H05K2201/068 ,  H05K2201/10674 ,  H05K2203/1322 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/05341 ,  H01L2924/05442 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

摘要： A semiconductor element mounting board includes: a board having surfaces; a semiconductor element provided at a side of one of the surfaces of the board; a bonding agent layer through which the board and the semiconductor element are bonded together, the bonding agent layer having a storage modulus at 25° C. of 5 to 1,000 MPa; a first layer into which the semiconductor element is embedded, the first layer provided on the one surface of the board; a second layer provided on the other surface of the board, the second layer being constituted from the same material as that of the first layer, the constituent material of the second layer having the same composition ratio as that of the constituent material of the first layer; and surface layers provided on the first and second layers, respectively, each of the surface layers being formed from at least a single layer. In the semiconductor element mounting board, a coefficient of thermal expansion of each surface layer in an inplane direction thereof measured based on JIS C 6481 at a temperature of 20° C. to a glass-transition temperature Tga° C., which is measured based on JIS C 6481, is 40 ppm/° C. or lower.

摘要翻译： 半导体元件安装板包括：具有表面的板; 设置在所述板的一个表面的一侧的半导体元件; 将基板和半导体元件结合在一起的接合剂层，25℃下的储能模量为5〜1000MPa的接合剂层; 第一层，半导体元件被嵌入其中，第一层设置在板的一个表面上; 设置在所述板的另一个表面上的第二层，所述第二层由与所述第一层相同的材料构成，所述第二层的构成材料具有与所述第一层的构成材料相同的组成比 ; 以及分别设置在第一和第二层上的表面层，每个表面层由至少单层形成。 在半导体元件安装基板中，基于JIS C 6481在20℃的温度下测定各面层的面内方向的热膨胀系数至玻璃化转变温度Tga°C 在JIS C 6481中为40ppm /℃以下。

公开(公告)号：US20110037174A1

公开(公告)日：2011-02-17

申请号：US12990220

申请日：2009-05-13

申请人： Hiroki Nikaido ,  Mitsuo Sugino

发明人： Hiroki Nikaido ,  Mitsuo Sugino

IPC分类号： H01L23/488 ,  H01L21/56

CPC分类号： H01L23/49816 ,  C09J163/00 ,  H01L21/563 ,  H01L21/6836 ,  H01L23/3114 ,  H01L24/06 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/29 ,  H01L24/81 ,  H01L24/94 ,  H01L2221/68336 ,  H01L2224/02319 ,  H01L2224/0401 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/1134 ,  H01L2224/13022 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2224/27416 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29386 ,  H01L2224/29388 ,  H01L2224/73203 ,  H01L2224/81193 ,  H01L2224/81208 ,  H01L2224/81801 ,  H01L2224/8191 ,  H01L2224/83101 ,  H01L2224/83102 ,  H01L2224/83191 ,  H01L2224/83192 ,  H01L2224/83855 ,  H01L2224/8388 ,  H01L2224/92125 ,  H01L2224/94 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01021 ,  H01L2924/01022 ,  H01L2924/01025 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01056 ,  H01L2924/01059 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/014 ,  H01L2924/0665 ,  H01L2924/12042 ,  H01L2924/15311 ,  H01L2924/1579 ,  H05K3/0052 ,  H05K2201/10378 ,  H05K2201/10674 ,  H01L2224/81 ,  H01L2224/83 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2924/05341 ,  H01L2924/05432 ,  H01L2924/05442 ,  H01L2924/05032 ,  H01L2924/05042 ,  H01L2924/0503 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299

摘要： A method of manufacturing a semiconductor component of the present invention has: obtaining a semiconductor wafer having stud electrodes formed on a functional surface thereof, and a circuit board having solder bumps on one surface and having electrode pads on the other surface thereof; bonding the semiconductor wafer and the circuit board, while providing a resin layer having a flux activity between the semiconductor wafer and the circuit board, and so as to bring the stud electrodes into contact with the solder bumps, while penetrating the resin layer having a flux activity, to thereby obtain a bonded structure; applying a solder material onto the electrode pads of the bonded structure; and dicing the bonded structure to obtain a plurality of semiconductor components.

摘要翻译： 本发明的半导体部件的制造方法具有：获得具有形成在其功能面上的双面电极的半导体晶片和在一个表面上具有焊料凸块的电路板，并在其另一个表面上具有电极焊盘; 接合半导体晶片和电路板，同时提供在半导体晶片和电路板之间具有通量活性的树脂层，并且使得柱状电极与焊料凸块接触，同时穿透具有焊剂的树脂层 活性，从而获得结合结构; 在焊接结构的电极焊盘上施加焊料; 并且对结合结构进行切割以获得多个半导体部件。