公开(公告)号：US08559600B2

公开(公告)日：2013-10-15

申请号：US13112093

申请日：2011-05-20

申请人： Kohei Okamoto ,  Atsushi Komoto ,  Wataru Kubo ,  Hirokatsu Miyata ,  Takashi Noma

发明人： Kohei Okamoto ,  Atsushi Komoto ,  Wataru Kubo ,  Hirokatsu Miyata ,  Takashi Noma

IPC分类号： G21K1/00 ,  G02B6/028 ,  G02B6/036

CPC分类号： G21K1/067 ,  G21K2201/067

摘要： An X-ray waveguide according to the present invention includes: a core for guiding an X-ray in such a wavelength band that a real part of the refractive index of a material is 1 or less; and a cladding for confining the X-ray in the core, wherein: the cladding has a periodic structure in which multiple materials having different real parts of the refractive index are periodically arranged in two-dimensional directions perpendicular to the guiding direction of X-ray; and the periodic structure has a period of 100 nm or less.

摘要翻译： 根据本发明的X射线波导包括：用于引导材料的折射率的实部的1个以下的波长带的X射线的芯; 以及用于将X射线限制在芯中的包层，其中：所述包层具有周期性结构，其中具有不同实际折射率的多个材料周期性地排列在与X射线的引导方向垂直的二维方向上 ; 并且周期性结构的周期为100nm以下。

公开(公告)号：US20130070905A1

公开(公告)日：2013-03-21

申请号：US13700612

申请日：2011-05-20

申请人： Atsushi Komoto ,  Hirokatsu Miyata ,  Wataru Kubo ,  Kohei Okamoto ,  Takashi Noma

发明人： Atsushi Komoto ,  Hirokatsu Miyata ,  Wataru Kubo ,  Kohei Okamoto ,  Takashi Noma

IPC分类号： G21K1/00

CPC分类号： G21K1/062 ,  B82Y10/00 ,  Y10T29/49

摘要： An X-ray waveguide according to the present invention includes: a core for guiding an X-ray; and a cladding for confining the X-ray in the core, wherein: the core has a low electron density portion and a high electron density portion having a higher electron density than an electron density of the low electron density portion; the low electron density portion is provided in the high electron density portion; and the low electron density portion is formed of one of a pore and an organic substance.

摘要翻译： 根据本发明的X射线波导包括：用于引导X射线的芯; 以及用于将X射线限制在芯中的包层，其中：所述芯具有低电子密度部分和具有比所述低电子密度部分的电子密度高的电子密度的高电子密度部分; 低电子密度部分设置在高电子密度部分中; 并且低电子密度部分由孔和有机物质之一形成。

公开(公告)号：US20130064352A1

公开(公告)日：2013-03-14

申请号：US13603733

申请日：2012-09-05

申请人： Wataru Kubo ,  Kohei Okamoto ,  Atsushi Komoto ,  Hirokatsu Miyata ,  Takashi Noma ,  Shin Kitamura ,  Masahiko Takahashi

发明人： Wataru Kubo ,  Kohei Okamoto ,  Atsushi Komoto ,  Hirokatsu Miyata ,  Takashi Noma ,  Shin Kitamura ,  Masahiko Takahashi

IPC分类号： G21K1/00 ,  B05D5/06

CPC分类号： G21K1/062 ,  B82Y10/00 ,  G21K1/067

摘要： An X-ray waveguide, for guiding X-rays having a wavelength of 1 pm or more and 100 nm or less, includes: a core and a cladding. The core has a periodic structure composed of a plurality of materials each having a different real part of refractive index in the direction perpendicular to the waveguiding direction. A planarizing layer is disposed between the core and the cladding. The critical angle for total reflection of the X-rays at the interface between the planarizing layer and the cladding is larger than the Bragg angle of the periodic structure of the core.

摘要翻译： 用于引导具有1μm以上且100nm以下的波长的X射线的X射线波导包括：芯和包层。 芯具有由多个材料组成的周期性结构，每个材料在垂直于波导方向的方向上具有不同的实部折射率。 平坦化层设置在芯和包层之间。 在平坦化层和包层之间的界面处的X射线的全反射的临界角大于芯的周期性结构的布拉格角。

公开(公告)号：US20110299661A1

公开(公告)日：2011-12-08

申请号：US13112093

申请日：2011-05-20

申请人： Kohei Okamoto ,  Atsushi Komoto ,  Wataru Kubo ,  Hirokatsu Miyata ,  Takashi Noma

发明人： Kohei Okamoto ,  Atsushi Komoto ,  Wataru Kubo ,  Hirokatsu Miyata ,  Takashi Noma

IPC分类号： G21K1/00

CPC分类号： G21K1/067 ,  G21K2201/067

摘要： An X-ray waveguide according to the present invention includes: a core for guiding an X-ray in such a wavelength band that a real part of the refractive index of a material is 1 or less; and a cladding for confining the X-ray in the core, wherein: the cladding has a periodic structure in which multiple materials having different real parts of the refractive index are periodically arranged in two-dimensional directions perpendicular to the guiding direction of X-ray; and the periodic structure has a period of 100 nm or less.

摘要翻译： 根据本发明的X射线波导包括：用于引导材料的折射率的实部的1个以下的波长带的X射线的芯; 以及用于将X射线限制在芯中的包层，其中：所述包层具有周期性结构，其中具有不同实际折射率的多个材料周期性地排列在与X射线的引导方向垂直的二维方向上 ; 并且周期性结构的周期为100nm以下。

公开(公告)号：US20070023289A1

公开(公告)日：2007-02-01

申请号：US11437787

申请日：2006-05-22

申请人： Hirokatsu Miyata ,  Masatoshi Watanabe ,  Takashi Noma ,  Kazuyuki Kuroda ,  Takashi Suzuki ,  Ayumu Fukuoka

发明人： Hirokatsu Miyata ,  Masatoshi Watanabe ,  Takashi Noma ,  Kazuyuki Kuroda ,  Takashi Suzuki ,  Ayumu Fukuoka

IPC分类号： E04B1/70

CPC分类号： C01B37/02 ,  B01J20/28033 ,  B01J20/28083 ,  B82Y30/00 ,  C01B33/124 ,  H01S5/10

摘要： A novel structure is provided in which mesopores are oriented. Further a mesoporous film is provided which has two-branched diffraction peaks at intervals or 180° according to in-plane X-ray diffraction.

摘要翻译： 提供了一种新颖的结构，其中介孔取向。 此外，提供了根据平面内X射线衍射，间隔或180°具有双支链衍射峰的介孔膜。

公开(公告)号：US08188828B2

公开(公告)日：2012-05-29

申请号：US12486477

申请日：2009-06-17

申请人： Takashi Noma ,  Jun Sasaki ,  Kosuke Yamada

发明人： Takashi Noma ,  Jun Sasaki ,  Kosuke Yamada

IPC分类号： H01F5/00 ,  H01F27/30 ,  H01F27/28

CPC分类号： H01F17/0013 ,  H01F38/10 ,  H01G4/40

摘要： A multilayer electronic component that can suppress the formation of projections and depressions on a surface, and an electronic component unit including the multilayer electronic component, are provided. In the multilayer electronic component, coil electrodes (8) having a shape of ring-shaped wiring with a part removed therefrom are electrically connected to each other to constitute a coil (L). Magnetic layers (4) are stacked together with the plurality of coil electrodes (8). The coil electrodes (8a, 8c, 8e) having a radius r1 and the coil electrodes (8b, 8d) having a radius r2 that is smaller than the radius r1 may be alternately arranged in a stacking direction.

摘要翻译： 提供了能够抑制表面上的凹凸形成的多层电子部件和包括该多层电子部件的电子部件单元。 在多层电子部件中，具有从其去除部分的环状布线形状的线圈电极（8）彼此电连接以构成线圈（L）。 磁性层（4）与多个线圈电极（8）堆叠在一起。 具有半径r1的线圈电极（8a，8c，8e）和半径r2小于半径r1的线圈电极（8b，8d）可以沿堆叠方向交替排列。

公开(公告)号：US07981807B2

公开(公告)日：2011-07-19

申请号：US12051502

申请日：2008-03-19

申请人： Akira Suzuki ,  Takashi Noma ,  Hiroyuki Shinogi ,  Yukihiro Takao ,  Shinzo Ishibe ,  Shigeki Otsuka ,  Keiichi Yamaguchi

发明人： Akira Suzuki ,  Takashi Noma ,  Hiroyuki Shinogi ,  Yukihiro Takao ,  Shinzo Ishibe ,  Shigeki Otsuka ,  Keiichi Yamaguchi

IPC分类号： H01L21/302

CPC分类号： H01L21/78 ,  H01L23/3114 ,  H01L23/482 ,  H01L23/49827 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/05568 ,  H01L2224/16 ,  H01L2224/274 ,  H01L2924/00014 ,  H01L2924/01057 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2224/05599 ,  H01L2224/05099

摘要： Cost is reduced and reliability is improved with a CSP type semiconductor device. A glass substrate which works as a supporting plate is bonded through an adhesive to a first surface of a semiconductor wafer on which first wirings are formed. Thickness of the semiconductor wafer is reduced by back-grinding the semiconductor wafer on a second surface of the semiconductor wafer which is opposite to the first surface of the semiconductor wafer. The semiconductor wafer is wet-etched to remove bumps and dips on the second surface of the semiconductor wafer caused during the back-grinding. Then the second surface of the semiconductor wafer is etched to form a tapered groove. The semiconductor wafer is wet-etched to reduce bumps and dips caused by the etching and round a corner of the groove. The wet-etching improves coverage of insulation film, wiring and protection film and enhances yield and reliability of the semiconductor device.

摘要翻译： CSP型半导体器件降低成本并提高可靠性。 作为支撑板的玻璃基板通过粘合剂粘合到其上形成有第一布线的半导体晶片的第一表面。 半导体晶片的厚度通过在与半导体晶片的第一表面相对的半导体晶片的第二表面上的背面研磨半导体晶片来减少。 湿式蚀刻半导体晶片以去除在后研磨期间引起的半导体晶片的第二表面上的凸起和凹陷。 然后蚀刻半导体晶片的第二表面以形成锥形槽。 湿式蚀刻半导体晶片以减少由蚀刻引起的凸起和凹陷，并且绕着凹槽的一角。 湿蚀刻提高了绝缘膜，布线和保护膜的覆盖率，并提高了半导体器件的产量和可靠性。

公开(公告)号：US07919875B2

公开(公告)日：2011-04-05

申请号：US11956160

申请日：2007-12-13

申请人： Takashi Noma ,  Katsuhiko Kitagawa ,  Hisao Otsuka ,  Akira Suzuki ,  Yoshinori Seki ,  Yukihiro Takao ,  Keiichi Yamaguchi ,  Motoaki Wakui ,  Masanori Iida

发明人： Takashi Noma ,  Katsuhiko Kitagawa ,  Hisao Otsuka ,  Akira Suzuki ,  Yoshinori Seki ,  Yukihiro Takao ,  Keiichi Yamaguchi ,  Motoaki Wakui ,  Masanori Iida

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L24/13 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L23/3114 ,  H01L24/11 ,  H01L24/12 ,  H01L2221/68327 ,  H01L2221/68372 ,  H01L2224/02313 ,  H01L2224/0401 ,  H01L2224/0558 ,  H01L2224/05644 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2224/13099

摘要： A manufacturing method of a semiconductor device formed in a chip size package is improved to enhance a yield and reliability. A window to expose first wirings is formed only in a region of a semiconductor substrate where the first wirings exist. As a result, area of the semiconductor substrate bonded to a supporting body through an insulation film and a resin is increased to prevent cracks in the supporting body and separation of the semiconductor substrate from the supporting body. A slit is formed along a dicing line after forming the window, the slit is covered with a protection film and then the semiconductor substrate is diced into individual semiconductor dice. Thus, separation on a cut surface or at an edge of the semiconductor dice, which otherwise would be caused by contact of the blade in the dicing can be prevented.

摘要翻译： 改进了以芯片尺寸封装形成的半导体器件的制造方法，以提高产量和可靠性。 仅在存在第一布线的半导体基板的区域中形成露出第一布线的窗口。 结果，增加了通过绝缘膜和树脂粘合到支撑体的半导体衬底的面积，以防止支撑体中的裂纹和半导体衬底与支撑体的分离。 在形成窗口之后沿着切割线形成狭缝，用保护膜覆盖狭缝，然后将半导体基板切割成单独的半导体管芯。 因此，可以防止在切割时由刀片接触而导致的半导体管芯的切割面或边缘处的分离。

公开(公告)号：US20100038742A1

公开(公告)日：2010-02-18

申请号：US12440864

申请日：2007-08-22

申请人： Yuichi Morita ,  Takashi Noma

发明人： Yuichi Morita ,  Takashi Noma

IPC分类号： H01L29/06 ,  H01L21/60

CPC分类号： H01L21/4853 ,  H01L2224/11

摘要： This invention is directed to offer a technology that makes it possible to form desired bump electrodes easily when the bump electrodes are to be formed at locations lowered by a step. There is formed an isolation layer 12 to isolate each of bump electrode forming regions 11. The isolation layer 12 is a resist layer, for example, and is formed by exposure and development processes, for example. Each of the bump electrode forming regions 11 is surrounded by the isolation layer 12 and a protection layer 10 that covers a side surface of a semiconductor substrate 2. Then, a printing mask 16 that has openings 15 at locations corresponding to the bump electrode forming regions 11 is placed above the semiconductor substrate 2. Next, solder 17 in paste form is applied to the printing mask 16. Then the solder 17 is applied to a metal layer 9 by moving a squeeze 18 at a constant speed. Bump electrodes 19 are obtained by heating, melting and re-crystallizing the solder 17 after removing the printing mask 16.

摘要翻译： 本发明的目的在于提供一种技术，使得当在要降低阶梯的位置处形成凸起电极时，可以容易地形成所需的凸块电极。 形成隔离层12以隔离突起电极形成区域11.隔离层12例如是抗蚀剂层，并且例如通过曝光和显影处理形成。 每个凸起电极形成区域11被隔离层12和覆盖半导体衬底2的侧表面的保护层10围绕。然后，在与凸起电极形成区域对应的位置处具有开口15的印刷掩模16 11被放置在半导体衬底2的上方。接下来，将糊状的焊料17施加到印刷掩模16上。然后通过以恒定速度移动挤压18将焊料17施加到金属层9。 在除去印刷掩模16之后，通过加热，熔化和再结晶焊料17获得凸起电极19。

公开(公告)号：US20090162750A1

公开(公告)日：2009-06-25

申请号：US12394736

申请日：2009-02-27

申请人： Soichiro Kawakami ,  Norishige Kakegawa ,  Akio Kashiwazaki ,  Toshiaki Aiba ,  Rie Ueno ,  Mikio Shimada ,  Kaoru Ojima ,  Takashi Noma

发明人： Soichiro Kawakami ,  Norishige Kakegawa ,  Akio Kashiwazaki ,  Toshiaki Aiba ,  Rie Ueno ,  Mikio Shimada ,  Kaoru Ojima ,  Takashi Noma

IPC分类号： H01M4/58 ,  H01M4/88

CPC分类号： H01M4/134 ,  H01G11/24 ,  H01G11/46 ,  H01G11/50 ,  H01M4/366 ,  H01M4/386 ,  H01M4/387 ,  H01M4/48 ,  H01M4/58 ,  H01M4/62 ,  H01M10/0525 ,  Y02E60/13 ,  Y10T428/259 ,  Y10T428/2927

摘要： A method of producing a material capable of electrochemically storing and releasing a large amount of lithium ions is provided. The material is used as an electrode material for a negative electrode, and includes silicon or tin primary particles composed of crystal particles each having a specific diameter and an amorphous surface layer formed of at least a metal oxide, having a specific thickness. Gibbs free energy when the metal oxide is produced by oxidation of a metal is smaller than Gibbs free energy when silicon or tin is oxidized, and the metal oxide has higher thermodynamic stability than silicon oxide or tin oxide. The method of producing the electrode material includes reacting silicon or tin with a metal oxide, reacting a silicon oxide or a tin oxide with a metal, or reacting a silicon compound or a tin compound with a metal compound to react with each other.

摘要翻译： 提供了能够电化学储存和释放大量锂离子的材料的制造方法。 该材料用作负极的电极材料，并且包括由具有特定直径的晶体颗粒和由具有特定厚度的至少一种金属氧化物形成的无定形表面层构成的硅或锡一次粒子。 金属氧化物当金属氧化时产生的吉布斯自由能小于硅或锡被氧化时的吉布斯自由能，并且金属氧化物比氧化硅或氧化锡具有更高的热力学稳定性。 制造电极材料的方法包括使硅或锡与金属氧化物反应，使氧化硅或氧化锡与金属反应，或使硅化合物或锡化合物与金属化合物反应，使其彼此反应。