公开(公告)号：US07575994B2

公开(公告)日：2009-08-18

申请号：US11451633

申请日：2006-06-13

申请人： Yuichi Morita ,  Shinzo Ishibe ,  Takashi Noma ,  Hisao Otsuka ,  Yukihiro Takao ,  Hiroshi Kanamori

发明人： Yuichi Morita ,  Shinzo Ishibe ,  Takashi Noma ,  Hisao Otsuka ,  Yukihiro Takao ,  Hiroshi Kanamori

IPC分类号： H01L21/44

CPC分类号： H01L23/3192 ,  H01L23/3114 ,  H01L23/3171 ,  H01L24/11 ,  H01L24/12 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05567 ,  H01L2224/05644 ,  H01L2224/1132 ,  H01L2224/1147 ,  H01L2224/13099 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/13091 ,  H01L2924/00 ,  H01L2924/00014

摘要： The invention provides a CSP type semiconductor device with high reliability. The semiconductor device includes a pad electrode formed on a semiconductor substrate, a first passivation film covering an end portion of the pad electrode and having a first opening on the pad electrode, a plating layer formed on the pad electrode in the first opening, a second passivation film covering an exposed portion of the pad electrode between an end portion of the first passivation film and the plating layer, covering an end portion of the plating layer, and having a second opening on the plating layer, and a conductive terminal formed on the plating layer in the second opening.

摘要翻译： 本发明提供了一种具有高可靠性的CSP型半导体器件。 半导体器件包括形成在半导体衬底上的焊盘电极，覆盖焊盘电极的端部并且在焊盘电极上具有第一开口的第一钝化膜，形成在第一开口中的焊盘电极上的镀层，第二钝化膜 钝化膜，覆盖第一钝化膜的端部与镀覆层之间的焊盘电极的露出部分，覆盖镀层的端部，并且在镀层上具有第二开口;以及导电端子， 第二开口中的镀层。

公开(公告)号：US20060289991A1

公开(公告)日：2006-12-28

申请号：US11451619

申请日：2006-06-13

申请人： Yuichi Morita ,  Shinzo Ishibe ,  Takashi Noma ,  Hisao Otsuka ,  Yukihiro Takao ,  Hiroshi Kanamori

发明人： Yuichi Morita ,  Shinzo Ishibe ,  Takashi Noma ,  Hisao Otsuka ,  Yukihiro Takao ,  Hiroshi Kanamori

IPC分类号： H01L23/48

CPC分类号： H01L24/13 ,  H01L23/3192 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05568 ,  H01L2224/05644 ,  H01L2224/1191 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2924/0001 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/13091 ,  H01L2924/00014 ,  H01L2924/00

摘要： The invention provides a CSP type semiconductor device with high reliability. The semiconductor device includes a pad electrode formed on a semiconductor substrate with insulation films interposed therebetween, a plating layer formed on the pad electrode, a conductive terminal formed on the plating layer and electrically connected with the pad electrode, and a first passivation film covering the insulation films and a side end portion of the pad electrode, in which an exposed portion of the pad electrode that causes corrosion is covered by forming a second passivation film so as to cover the first passivation film, the plating layer, and a portion of a sidewall of the conductive terminal.

摘要翻译： 本发明提供了一种具有高可靠性的CSP型半导体器件。 半导体器件包括：在半导体衬底上形成有绝缘膜的焊盘电极，形成在焊盘电极上的镀层，形成在镀层上并与焊盘电极电连接的导电端子;以及第一钝化膜， 绝缘膜和焊盘电极的侧端部分，其中通过形成第二钝化膜来覆盖引起腐蚀的焊盘电极的暴露部分，以覆盖第一钝化膜，镀层和一部分 导电端子的侧壁。

公开(公告)号：US09034729B2

公开(公告)日：2015-05-19

申请号：US12438869

申请日：2007-08-22

申请人： Hiroshi Yamada ,  Katsuhiko Kitagawa ,  Kazuo Okada ,  Yuichi Morita ,  Hiroyuki Shinogi ,  Shinzo Ishibe ,  Yoshinori Seki ,  Takashi Noma

发明人： Hiroshi Yamada ,  Katsuhiko Kitagawa ,  Kazuo Okada ,  Yuichi Morita ,  Hiroyuki Shinogi ,  Shinzo Ishibe ,  Yoshinori Seki ,  Takashi Noma

IPC分类号： H01L21/30 ,  H01L27/146 ,  B81C1/00

CPC分类号： H01L27/14618 ,  B81C1/00269 ,  B81C2203/0118 ,  H01L27/14625 ,  H01L27/14683 ,  H01L27/14685 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/05644 ,  H01L2224/05655 ,  H01L2224/05666 ,  H01L2224/13 ,  H01L2224/13025 ,  H01L2924/00014

摘要： An object of the invention is to provide a smaller semiconductor device of which the manufacturing process is simplified and the manufacturing cost is reduced and a method of manufacturing the same. Furthermore, an object of the invention is to provide a semiconductor device having a cavity. A first supporting body 5 having a penetration hole 6 penetrating it from the front surface to the back surface is attached to a front surface of a semiconductor substrate 2 with an adhesive layer 4 being interposed therebetween. A device element 1 and wiring layers 3 are formed on the front surface of the semiconductor substrate 2. A second supporting body 7 is attached to the first supporting body 5 with an adhesive layer 8 being interposed therebetween so as to cover the penetration hole 6. The device element 1 is sealed in a cavity 9 surrounded by the semiconductor substrate 2, the first supporting body 5 and the second supporting body 7.

摘要翻译： 本发明的目的是提供一种较小的半导体器件，其制造工艺简化并且制造成本降低，并且制造该半导体器件的方法。 此外，本发明的目的是提供一种具有空腔的半导体器件。 具有穿透孔6的从前表面到后表面穿透的第一支撑体5被粘附在半导体衬底2的前表面上，其间插入有粘合剂层4。 器件元件1和布线层3形成在半导体衬底2的前表面上。第二支撑体7被安装在第一支撑体5上，其中夹有粘合剂层8以覆盖穿透孔6。 器件元件1被密封在由半导体衬底2，第一支撑体5和第二支撑体7包围的空腔9中。

公开(公告)号：US20070145590A1

公开(公告)日：2007-06-28

申请号：US11639411

申请日：2006-12-15

申请人： Takashi Noma ,  Kazuo Okada ,  Shinzo Ishibe ,  Katsuhiko Kitagawa ,  Yuichi Morita ,  Shigeki Otsuka ,  Hiroshi Yamada ,  Noboru Okubo ,  Hiroyuki Shinogi ,  Mitsuru Okigawa

发明人： Takashi Noma ,  Kazuo Okada ,  Shinzo Ishibe ,  Katsuhiko Kitagawa ,  Yuichi Morita ,  Shigeki Otsuka ,  Hiroshi Yamada ,  Noboru Okubo ,  Hiroyuki Shinogi ,  Mitsuru Okigawa

IPC分类号： H01L23/52

CPC分类号： H01L27/14618 ,  H01L27/14636 ,  H01L31/0203 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/10 ,  H01L2924/00014

摘要： This invention provides a semiconductor device that solves a problem that a pattern of a wiring formed on a back surface of a semiconductor substrate is reflected on an output image. A light receiving element (e.g. a CCD, an infrared ray sensor, a CMOS sensor, or an illumination sensor) is formed on a front surface of a semiconductor substrate, and a plurality of ball-shaped conductive terminals is disposed on a back surface of the semiconductor substrate. Each of the conductive terminals is electrically connected to a pad electrode on the front surface of the semiconductor substrate through a wiring layer. The wiring layer and the conductive terminal are formed on the back surface of the semiconductor substrate except in a region overlapping the light receiving element in a vertical direction, and are not disposed in a region overlapping the light receiving element.

摘要翻译： 本发明提供一种半导体器件，其解决了形成在半导体衬底的背面上的布线的图案在输出图像上反射的问题。 在半导体衬底的前表面上形成有光接收元件（例如CCD，红外线传感器，CMOS传感器或照明传感器），并且多个球形导电端子设置在 半导体衬底。 每个导电端子通过布线层电连接到半导体衬底的前表面上的焊盘电极。 布线层和导电端子形成在除了在垂直方向上与光接收元件重叠的区域之外的半导体基板的背面上，并且不布置在与光接收元件重叠的区域中。

公开(公告)号：US08766408B2

公开(公告)日：2014-07-01

申请号：US11714906

申请日：2007-03-07

申请人： Takashi Noma ,  Shigeki Otsuka ,  Yuichi Morita ,  Kazuo Okada ,  Hiroshi Yamada ,  Katsuhiko Kitagawa ,  Noboru Okubo ,  Shinzo Ishibe ,  Hiroyuki Shinogi

发明人： Takashi Noma ,  Shigeki Otsuka ,  Yuichi Morita ,  Kazuo Okada ,  Hiroshi Yamada ,  Katsuhiko Kitagawa ,  Noboru Okubo ,  Shinzo Ishibe ,  Hiroyuki Shinogi

IPC分类号： H01L21/00

CPC分类号： H01L23/3128 ,  H01L21/6835 ,  H01L21/6836 ,  H01L23/49816 ,  H01L24/10 ,  H01L24/13 ,  H01L25/105 ,  H01L2221/68327 ,  H01L2221/68354 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/09701 ,  H01L2924/12042 ,  H01L2924/3511 ,  H01L2924/00

摘要： A packaged semiconductor device is manufactured by a simplified manufacturing process, and is reduced in cost, in thickness and in size. A device component and a pad electrode connected with the device component are formed on a semiconductor substrate. A supporter is bonded to a top surface of the semiconductor substrate through an adhesive layer. Then, there is formed a protection layer that has an opening at a location corresponding to the pad electrode and covers a side surface and a back surface of the semiconductor substrate. A conductive terminal is formed on the pad electrode at the location corresponding to the opening formed in the protection layer. No wiring layer or conductive terminal is formed on the back surface of the semiconductor substrate. A conductive terminal is formed on a periphery of the supporter outside of and next to the side surface of the semiconductor substrate.

摘要翻译： 封装的半导体器件通过简化的制造工艺制造，并且在成本，厚度和尺寸方面都降低了。 在半导体衬底上形成与器件部件连接的器件部件和焊盘电极。 支撑体通过粘合剂层结合到半导体衬底的顶表面。 然后，形成保护层，该保护层在与焊盘电极对应的位置处具有开口，并且覆盖半导体衬底的侧表面和后表面。 在与保护层中形成的开口相对应的位置处，在焊盘电极上形成导电端子。 在半导体基板的背面没有形成布线层或导电端子。 导电端子形成在半导体衬底的侧表面之外和旁边的支撑体的周边上。

公开(公告)号：US07986021B2

公开(公告)日：2011-07-26

申请号：US11639410

申请日：2006-12-15

申请人： Kazuo Okada ,  Katsuhiko Kitagawa ,  Takashi Noma ,  Shigeki Otsuka ,  Hiroshi Yamada ,  Shinzo Ishibe ,  Yuichi Morita ,  Noboru Okubo ,  Hiroyuki Shinogi ,  Mitsuru Okigawa

发明人： Kazuo Okada ,  Katsuhiko Kitagawa ,  Takashi Noma ,  Shigeki Otsuka ,  Hiroshi Yamada ,  Shinzo Ishibe ,  Yuichi Morita ,  Noboru Okubo ,  Hiroyuki Shinogi ,  Mitsuru Okigawa

IPC分类号： H01L31/0232

CPC分类号： H01L27/14618 ,  H01L23/481 ,  H01L27/14625 ,  H01L31/0203 ,  H01L31/02327 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05548 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2924/014

摘要： The invention provides a semiconductor device that solves a problem of reflection of a pattern of a wiring formed on a back surface of a semiconductor substrate on an output image. A reflection layer is formed between a light receiving element and a wiring layer, that reflects an infrared ray toward a light receiving element the without transmitting it to the wiring layer, the infrared ray entering from a light transparent substrate toward the wiring layer through a semiconductor substrate. The reflection layer is formed at least in a region under the light receiving element uniformly or only under the light receiving element. Alternatively, an anti-reflection layer having a function of absorbing the entering infrared ray to prevent transmission thereof may be formed instead of the reflection layer.

摘要翻译： 本发明提供一种半导体器件，其解决了在输出图像上形成在半导体衬底的背面上的布线的图案的反射的问题。 在光接收元件和布线层之间形成反射层，其将红外线反射到光接收元件而不将其传输到布线层，红外线通过半导体从光透明基板进入布线层 基质。 反射层至少在光接收元件下方的区域中均匀地或仅在光接收元件下形成。 或者，可以形成具有吸收入射红外线以防止透射的功能的抗反射层，而不是反射层。

公开(公告)号：US07633133B2

公开(公告)日：2009-12-15

申请号：US11639411

申请日：2006-12-15

申请人： Takashi Noma ,  Kazuo Okada ,  Shinzo Ishibe ,  Katsuhiko Kitagawa ,  Yuichi Morita ,  Shigeki Otsuka ,  Hiroshi Yamada ,  Noboru Okubo ,  Hiroyuki Shinogi ,  Mitsuru Okigawa

发明人： Takashi Noma ,  Kazuo Okada ,  Shinzo Ishibe ,  Katsuhiko Kitagawa ,  Yuichi Morita ,  Shigeki Otsuka ,  Hiroshi Yamada ,  Noboru Okubo ,  Hiroyuki Shinogi ,  Mitsuru Okigawa

IPC分类号： H01L31/0203 ,  H01L31/0216 ,  H01L31/0224

CPC分类号： H01L27/14618 ,  H01L27/14636 ,  H01L31/0203 ,  H01L2224/05001 ,  H01L2224/05008 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05548 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/10 ,  H01L2924/00014

摘要： This invention provides a semiconductor device that solves a problem that a pattern of a wiring formed on a back surface of a semiconductor substrate is reflected on an output image. A light receiving element (e.g. a CCD, an infrared ray sensor, a CMOS sensor, or an illumination sensor) is formed on a front surface of a semiconductor substrate, and a plurality of ball-shaped conductive terminals is disposed on a back surface of the semiconductor substrate. Each of the conductive terminals is electrically connected to a pad electrode on the front surface of the semiconductor substrate through a wiring layer. The wiring layer and the conductive terminal are formed on the back surface of the semiconductor substrate except in a region overlapping the light receiving element in a vertical direction, and are not disposed in a region overlapping the light receiving element.

摘要翻译： 本发明提供一种半导体器件，其解决了形成在半导体衬底的背面上的布线的图案在输出图像上反射的问题。 在半导体衬底的前表面上形成有光接收元件（例如CCD，红外线传感器，CMOS传感器或照明传感器），并且多个球形导电端子设置在 半导体衬底。 每个导电端子通过布线层电连接到半导体衬底的前表面上的焊盘电极。 布线层和导电端子形成在除了在垂直方向上与光接收元件重叠的区域之外的半导体基板的背面上，并且不布置在与光接收元件重叠的区域中。

公开(公告)号：US20070145420A1

公开(公告)日：2007-06-28

申请号：US11639410

申请日：2006-12-15

申请人： Kazuo Okada ,  Katsuhiko Kitagawa ,  Takashi Noma ,  Shigeki Otsuka ,  Hiroshi Yamada ,  Shinzo Ishibe ,  Yuichi Morita ,  Noboru Okubo ,  Hiroyuki Shinogi ,  Mitsuru Okigawa

发明人： Kazuo Okada ,  Katsuhiko Kitagawa ,  Takashi Noma ,  Shigeki Otsuka ,  Hiroshi Yamada ,  Shinzo Ishibe ,  Yuichi Morita ,  Noboru Okubo ,  Hiroyuki Shinogi ,  Mitsuru Okigawa

IPC分类号： H01L27/148

CPC分类号： H01L27/14618 ,  H01L23/481 ,  H01L27/14625 ,  H01L31/0203 ,  H01L31/02327 ,  H01L2224/02371 ,  H01L2224/02372 ,  H01L2224/0401 ,  H01L2224/05 ,  H01L2224/05548 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/131 ,  H01L2924/014

摘要： The invention provides a semiconductor device that solves a problem of reflection of a pattern of a wiring formed on a back surface of a semiconductor substrate on an output image. A reflection layer is formed between a light receiving element and a wiring layer, that reflects an infrared ray toward a light receiving element the without transmitting it to the wiring layer, the infrared ray entering from a light transparent substrate toward the wiring layer through a semiconductor substrate. The reflection layer is formed at least in a region under the light receiving element uniformly or only under the light receiving element. Alternatively, an anti-reflection layer having a function of absorbing the entering infrared ray to prevent transmission thereof may be formed instead of the reflection layer.

摘要翻译： 本发明提供一种半导体器件，其解决了在输出图像上形成在半导体衬底的背面上的布线的图案的反射的问题。 在光接收元件和布线层之间形成反射层，其将红外线反射到光接收元件而不将其传输到布线层，红外线通过半导体从光透明基板进入布线层 基质。 反射层至少在光接收元件下方的区域中均匀地或仅在光接收元件下形成。 或者，可以形成具有吸收入射红外线以防止透射的功能的抗反射层，而不是反射层。

公开(公告)号：US20100038742A1

公开(公告)日：2010-02-18

申请号：US12440864

申请日：2007-08-22

申请人： Yuichi Morita ,  Takashi Noma

发明人： Yuichi Morita ,  Takashi Noma

IPC分类号： H01L29/06 ,  H01L21/60

CPC分类号： H01L21/4853 ,  H01L2224/11

摘要： This invention is directed to offer a technology that makes it possible to form desired bump electrodes easily when the bump electrodes are to be formed at locations lowered by a step. There is formed an isolation layer 12 to isolate each of bump electrode forming regions 11. The isolation layer 12 is a resist layer, for example, and is formed by exposure and development processes, for example. Each of the bump electrode forming regions 11 is surrounded by the isolation layer 12 and a protection layer 10 that covers a side surface of a semiconductor substrate 2. Then, a printing mask 16 that has openings 15 at locations corresponding to the bump electrode forming regions 11 is placed above the semiconductor substrate 2. Next, solder 17 in paste form is applied to the printing mask 16. Then the solder 17 is applied to a metal layer 9 by moving a squeeze 18 at a constant speed. Bump electrodes 19 are obtained by heating, melting and re-crystallizing the solder 17 after removing the printing mask 16.

摘要翻译： 本发明的目的在于提供一种技术，使得当在要降低阶梯的位置处形成凸起电极时，可以容易地形成所需的凸块电极。 形成隔离层12以隔离突起电极形成区域11.隔离层12例如是抗蚀剂层，并且例如通过曝光和显影处理形成。 每个凸起电极形成区域11被隔离层12和覆盖半导体衬底2的侧表面的保护层10围绕。然后，在与凸起电极形成区域对应的位置处具有开口15的印刷掩模16 11被放置在半导体衬底2的上方。接下来，将糊状的焊料17施加到印刷掩模16上。然后通过以恒定速度移动挤压18将焊料17施加到金属层9。 在除去印刷掩模16之后，通过加热，熔化和再结晶焊料17获得凸起电极19。

公开(公告)号：US07508072B2

公开(公告)日：2009-03-24

申请号：US11529553

申请日：2006-09-29

申请人： Yuichi Morita ,  Shinzo Ishibe ,  Takashi Noma ,  Hisao Otsuka ,  Yukihiro Takao ,  Hiroshi Kanamori

发明人： Yuichi Morita ,  Shinzo Ishibe ,  Takashi Noma ,  Hisao Otsuka ,  Yukihiro Takao ,  Hiroshi Kanamori

IPC分类号： H01L23/48 ,  H01L21/44

CPC分类号： H01L21/6835 ,  H01L21/76898 ,  H01L23/3114 ,  H01L23/562 ,  H01L23/564 ,  H01L2221/6834 ,  H01L2224/0392 ,  H01L2224/0401 ,  H01L2224/05001 ,  H01L2224/05022 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05548 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/16237 ,  H01L2924/01019 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/04941 ,  H01L2924/00014

摘要： The invention prevents a pad electrode for external connection of a semiconductor device from being damaged. An electronic circuit, a first pad electrode connected to the electronic circuit, and a second pad electrode connected to the first pad electrode are formed on a semiconductor substrate. A first protection film is formed, covering the first pad electrode and having an opening on the second pad electrode only. A wiring layer is further formed, being connected to the back surface of the first pad electrode through a via hole penetrating the semiconductor substrate and extending from the via hole onto the back surface of the semiconductor substrate.

摘要翻译： 本发明防止半导体器件的外部连接的焊盘电极被损坏。 连接到电子电路的电子电路，第一焊盘电极和连接到第一焊盘电极的第二焊盘电极形成在半导体衬底上。 形成第一保护膜，覆盖第一焊盘电极并且仅在第二焊盘电极上具有开口。 进一步形成布线层，其通过穿透半导体衬底的通孔连接到第一焊盘电极的背面并从通孔延伸到半导体衬底的背面。