Chemical-mechanical polishing pad
    11.
    发明授权
    Chemical-mechanical polishing pad 有权
    化学机械抛光垫

    公开(公告)号:US6120366A

    公开(公告)日:2000-09-19

    申请号:US225367

    申请日:1999-01-04

    CPC classification number: B24B37/26

    Abstract: The invention provides a chemical-mechanical polishing pad, which includes a plurality of annular grooves and a plurality of streamline grooves designed according to principles of the hydrodynamics. The streamline grooves of polishing pad are designed according to flow equations derived from source flow and vortex flow, and the streamline grooves of polishing pad uniformly distribute the slurry on the polishing pad. An angle and a depth of the streamline groove, which are calculated by boundary layer effect of the streamline groove function, are used to design an optimum structure for polishing pad.

    Abstract translation: 本发明提供了一种化学机械抛光垫,其包括多个环形槽和根据流体动力学原理设计的多条流线槽。 抛光垫的流线槽根据源流和涡流的流动方程设计,抛光垫的流线槽将浆料均匀分布在抛光垫上。 使用由流线槽功能的边界层效应计算的流线槽的角度和深度来设计抛光垫的最佳结构。

    Method for preventing poisoned vias and trenches
    12.
    发明授权
    Method for preventing poisoned vias and trenches 有权
    防止中毒通路和沟槽的方法

    公开(公告)号:US6071806A

    公开(公告)日:2000-06-06

    申请号:US152921

    申请日:1998-09-14

    Abstract: A method for preventing the occurrence of poisoned trenches and vias in a dual damascene process that includes performing a densification process, such as an electron-beam process, on the surface of the exposed dielectric layer around the openings before the openings are filled with conductive material. The densified surface of the dielectric layer is able to efficiently prevent the occurrence of poisoned trenches and vias caused by the outgassing phenomena.

    Abstract translation: 一种用于防止在双镶嵌工艺中发生中毒的沟槽和通孔的方法,该方法包括在开口之前的开口周围的暴露介电层的表面上进行诸如电子束工艺的致密化处理,该导电材料填充有导电材料 。 电介质层的致密表面能够有效地防止由脱气现象引起的中毒的沟槽和通孔的发生。

    Method for forming capacitor
    14.
    发明授权
    Method for forming capacitor 有权
    电容器形成方法

    公开(公告)号:US06197650B1

    公开(公告)日:2001-03-06

    申请号:US09314630

    申请日:1999-05-15

    Applicant: Kun-Lin Wu

    Inventor: Kun-Lin Wu

    CPC classification number: H01L28/55 H01L21/76838

    Abstract: A method for forming capacitor is proposed. The key point of the invention is that bottom plate and dielectric layer of capacitor are formed before metal interconnect is formed. Thus, thermal treatment of dielectric layer does not affect metal interconnect. Therefore, conventional fault that quality of dielectric layer is degraded by scant annealing is avoided, and then dielectric layer and metal interconnect can be optimized respectively. Obviously, the ultimate advantage of the proposed method is that not only breakdown voltage of dielectric layer is increased by annealing but also quality of metal interconnect is not affected by annealing. Therefore, an incidental advantage of the proposed method is that the method is beneficial to form both capacitor and metal interconnect.

    Abstract translation: 提出了一种形成电容器的方法。 本发明的关键在于在形成金属互连之前形成电容器的底板和电介质层。 因此,电介质层的热处理不影响金属互连。 因此,避免了通过不均匀退火导致介质层质量下降的常规故障,然后可以分别优化介质层和金属互连。 显然,所提出的方法的最终优点是不仅通过退火而增加介电层的击穿电压,而且金属互连的质量也不受退火的影响。 因此,所提出的方法的附带优点是该方法有利于形成电容器和金属互连。

    Method of cleaning slurry remnants after the completion of a
chemical-mechanical polish process
    16.
    发明授权
    Method of cleaning slurry remnants after the completion of a chemical-mechanical polish process 失效
    在化学机械抛光工艺完成后清洗浆料残留物的方法

    公开(公告)号:US5876508A

    公开(公告)日:1999-03-02

    申请号:US818898

    申请日:1997-03-17

    Abstract: A method for effectively cleaning the slurry remnants left on a polishing pad after the completion of a chemical mechanical polish (CMP) process is provided. This method is able to substantially thoroughly clean away all of the slurry remnants left on the polishing pad. In the method of the invention, the first step is to prepare a cleaning agent which is a mixture of H.sub.2 O.sub.2, deionized water, an acid solution, and an alkaline solution mixed to a predetermined ratio. The cleaning agent is subsequently directed to a nozzle formed in the pad dresser. This allows the cleaning agent to be jetted forcibly onto the slurry remnants on the polishing pad so as to clean the slurry remnants away from the polishing pad. The cleaning agent can be provided with predetermined ratios for various kinds of slurries so that the cleaning agent can be adjusted to be either acid or alkaline in nature. This can allow an increase in the repellent force between the particles of the slurry remnants and the underlying polishing pad that is caused by the so-called zeta potential, thus allowing the slurry remnants to be more easily removed from the polishing pad.

    Abstract translation: 提供了在完成化学机械抛光(CMP)工艺之后有效地清洁留在抛光垫上的浆料残余物的方法。 该方法能够基本上彻底地清除留在抛光垫上的所有浆料残余物。 在本发明的方法中,第一步是制备一种清洗剂,它是以预定比例混合的H 2 O 2,去离子水,酸性溶液和碱性溶液的混合物。 随后将清洁剂引导到形成在修整器中的喷嘴。 这样可以将洗涤剂强制地喷射到抛光垫上的浆料残余物上,以清除离开抛光垫的浆料残余物。 可以为各种浆料提供预定比例的清洗剂,使清洗剂本质上可以调节为酸性或碱性。 这可以增加由所谓的ζ电位引起的浆料残留物的颗粒和下面的抛光垫之间的驱除力,从而使浆料残余物更容易从抛光垫上去除。

    Cleaning system with automatically controlled brush pressure
    17.
    发明授权
    Cleaning system with automatically controlled brush pressure 有权
    具有自动控制刷压力的清洁系统

    公开(公告)号:US6119294A

    公开(公告)日:2000-09-19

    申请号:US232203

    申请日:1999-01-14

    CPC classification number: H01L21/67046 H01L21/6704

    Abstract: An auto brush pressure cleaning system is described. The system includes a first pneumatic brush, a second pneumatic brush disposed to align with the first pneumatic brush adjacent and parallel to the first pneumatic brush, and a computer. The system also includes a first brush pressure regulator electrically coupled to the computer and transmitting a first and a second signal to the computer and a second brush pressure regulator coupled to the second pneumatic brush and the first brush pressure regulator through a first three-way valve and electrically coupled to the computer, wherein the second pneumatic brush transmits a third signal to the second brush pressure regulator and to the first brush pressure regulator and the second brush pressure regulator transmits a fourth signal to the computer. The system further includes a first electro-pressure regulator coupled to the first brush pressure regulator and the first pneumatic brush through a second three-way valve, wherein the first brush pressure regulator receives a fifth signal from the first pneumatic brush and a second electro-pressure regulator coupled to the second pneumatic brush and electrically coupled to the first electro-pressure regulator and the computer, wherein the computer transmits a sixth signal to the second and the first electro-pressure regulators.

    Abstract translation: 描述了一种自动刷式压力清洗系统。 该系统包括第一气动刷,设置成与第一气动刷相邻并平行于第一气动刷的第二气动刷以及计算机。 该系统还包括电耦合到计算机并将第一和第二信号传送到计算机的第一电刷压力调节器和通过第一三通阀耦合到第二气动刷和第一电刷压力调节器的第二电刷压力调节器 并且电耦合到所述计算机,其中所述第二气动刷将第三信号传输到所述第二电刷压力调节器和所述第一电刷压力调节器,并且所述第二电刷压力调节器将第四信号传输到所述计算机。 该系统还包括通过第二三通阀联接到第一电刷压力调节器和第一气动刷的第一电压调节器,其中第一电刷压力调节器接收来自第一气动刷的第五信号和第二电 - 耦合到第二气动刷并且电耦合到第一电压调节器和计算机的压力调节器,其中计算机向第二和第一电压调节器传输第六信号。

    Method of removing residual contaminants in an alignment mark after a
CMP process
    18.
    发明授权
    Method of removing residual contaminants in an alignment mark after a CMP process 失效
    在CMP工艺之后去除对准标记中的残留污染物的方法

    公开(公告)号:US6057248A

    公开(公告)日:2000-05-02

    申请号:US897282

    申请日:1997-07-21

    CPC classification number: H01L21/02065

    Abstract: A method of removing residual contaminants in grooves of an alignment mark of a semiconductor wafer after a chemical-mechanical polishing is disclosed. The method includes scrubbing the semiconductor wafer using conventional scrubbing technique. Next, the semiconductor wafer is etched back to remove a damaged layer, which is formed during the chemical-mechanical polishing, over the semiconductor wafer. Finally, the semiconductor wafer is cleaned, for example, by NH.sub.4 OH/H.sub.2 O.sub.2 /DI, agitated by a megasonic source, thereby substantially removing the residual contaminants from the alignment mark.

    Abstract translation: 公开了一种在化学机械抛光之后去除半导体晶片的对准标记的凹槽中残留污染物的方法。 该方法包括使用常规洗涤技术擦洗半导体晶片。 接下来,将半导体晶片回蚀刻以除去在化学机械抛光期间形成的受损层在半导体晶片上。 最后,例如通过NH 4 OH / H 2 O 2 / DI清洗半导体晶片,用兆声波源进行搅拌,从而基本上从对准标记中除去残留的污染物。

    DISPLAY METHOD, APPLICATION PROGRAM AND COMPUTER READABLE MEDIUM FOR COMPUTER KEY FUNCTION
    19.
    发明申请
    DISPLAY METHOD, APPLICATION PROGRAM AND COMPUTER READABLE MEDIUM FOR COMPUTER KEY FUNCTION 审中-公开
    显示方法,计算机功能的应用程序和计算机可读介质

    公开(公告)号:US20110291942A1

    公开(公告)日:2011-12-01

    申请号:US12839886

    申请日:2010-07-20

    Applicant: Yu CHEN Kun-Lin Wu

    Inventor: Yu CHEN Kun-Lin Wu

    CPC classification number: G06F3/0489

    Abstract: A display method, an application program and a computer readable medium for displaying key function are disclosed. The display method for computer key function includes steps user pressing a special keys on the keyboard, triggering an internal embedded controller in the computer and further detecting hardware function set up in the computer via a basic input output system. Thus, function descriptions are displayed on a screen according to hardware function set up in the computer, wherein the hardware function and function descriptions correspond to each function key on the keyboard. Accordingly, it is not required to replace keyboard with different printed function reminding pattern when hardware functions of the computer is changed.

    Abstract translation: 公开了一种用于显示键功能的显示方法,应用程序和计算机可读介质。 用于计算机键功能的显示方法包括用户按压键盘上的特殊键的步骤,触发计算机内部嵌入式控制器,并通过基本输入输出系统进一步检测计算机中设置的硬件功能。 因此,功能描述根据计算机中设置的硬件功能在屏幕上显示,其中硬件功能和功能描述对应于键盘上的每个功能键。 因此,当计算机的硬件功能改变时,不需要用不同的打印功能提醒模式替换键盘。

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