利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

131 条记录 (耗时 0.036 秒)

    Image forming method
    11.
    发明授权
    Image forming method 有权
    图像形成方法

    公开(公告)号：US07344816B2

    公开(公告)日：2008-03-18

    申请号：US10940926

    申请日：2004-09-15

    申请人： Yasuo Matsumura ,  Tsukasa Matsuda ,  Kazuhiko Arai ,  Tetsuo Yamada

    发明人： Yasuo Matsumura ,  Tsukasa Matsuda ,  Kazuhiko Arai ,  Tetsuo Yamada

    IPC分类号： G03G15/20

    CPC分类号： G03G15/2064 ,  G03G2215/208

    摘要： A method for forming an image contains steps of: transferring a toner having a volume average particle diameter of 5 μm or less to a recording medium as a toner image having a monochromatic maximum toner mass per area of 0.35 mg/cm2 or less; and fixing the toner image at a surface temperature of a fixing roll which is 130° C. or less. The toner preferably has 0.02 log(Pa)/° C. or less of a gradient of a storage, elasticity per temperature in a temperature range of from Tm+20° C. to Tm+50° C. Here, Tm represents a melting temperature of a crystalline resin contained in the crystalline toner.

    摘要翻译： 形成图像的方法包括以下步骤：将具有5μm或更小的体积平均粒径的调色剂转印到记录介质上，作为每单位面积的单色最大调色剂质量为0.35mg / cm 2的调色剂图像， / SUP>以下; 并将调色剂图像定影在130℃或更低的定影辊的表面温度。 调色剂优选在Tm + 20℃至Tm + 50℃的温度范围内具有0.02log（℃）/℃或更低的存储梯度，每温度的弹性。这里，Tm表示熔融 包含在结晶调色剂中的结晶树脂的温度。

    PARTICLE-MEASURING SYSTEM AND PARTICLE-MEASURING METHOD
    14.
    发明申请
    PARTICLE-MEASURING SYSTEM AND PARTICLE-MEASURING METHOD 有权
    粒子测量系统和粒子测量方法

    公开(公告)号：US20070263217A1

    公开(公告)日：2007-11-15

    申请号：US11782031

    申请日：2007-07-24

    申请人： Hayashi Otsuki ,  Tsukasa Matsuda ,  Kyoko Ikeda

    发明人： Hayashi Otsuki ,  Tsukasa Matsuda ,  Kyoko Ikeda

    IPC分类号： G01N21/00

    CPC分类号： G01N1/24 ,  C23C16/4405 ,  C23C16/4412 ,  G01N15/06 ,  G01N2015/0693 ,  H01L21/67069 ,  H01L21/67115 ,  H01L21/67253 ,  H01L21/68742 ,  Y10T137/8593 ,  Y10T137/87652 ,  Y10T137/8766

    摘要： The present invention provides a particle measuring system which is provided in a processing system 40 which generates an atmosphere obtained by exhausting air or a gas in a processing chamber 48 by a vacuum pump 98 and applies a process concerning semiconductor manufacture to a wafer W in the atmosphere, attached to an exhaust pipe 90 which connects an exhaust opening 86 of the processing chamber 48 with the vacuum pump 98, and measures the number of the particles in the exhaust gas, and a measuring method thereof, the system and method providing a processing system and a cleaning method which terminate etching process by determining an end point based on the number of the particles in the exhaust gas and perform cleaning of unnecessary films.

    摘要翻译： 本发明提供一种粒子测量系统，其设置在处理系统40中，该处理系统40产生通过真空泵98排出处理室48中的空气或气体而获得的气氛，并将与半导体制造有关的工艺应用于晶片W 附着在排气管90上，排气管90将处理室48的排气口86与真空泵98连接，并测量废气中的颗粒数量及其测量方法，该系统和方法提供处理 系统和清洁方法，其通过基于废气中的颗粒数量确定终点并执行不需要的膜的清洁来终止蚀刻工艺。

    Method for forming a ruthenium metal layer on a patterned substrate
    15.
    发明授权
    Method for forming a ruthenium metal layer on a patterned substrate 有权
    在图案化基板上形成钌金属层的方法

    公开(公告)号：US07273814B2

    公开(公告)日：2007-09-25

    申请号：US10907022

    申请日：2005-03-16

    申请人： Tsukasa Matsuda

    发明人： Tsukasa Matsuda

    IPC分类号： H01L21/44

    CPC分类号： H01L21/28556 ,  C23C16/18 ,  C23C16/4481 ,  C23C16/45542 ,  C23C16/52 ,  H01L21/28562 ,  H01L21/76846 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： A method for forming a ruthenium metal layer includes providing a patterned substrate in a process chamber of a deposition system, where the patterned substrate contains one or more vias or trenches, or combinations thereof, depositing a first ruthenium metal layer on the substrate in an atomic layer deposition process, and depositing a second ruthenium metal layer on the first ruthenium metal layer in a thermal chemical vapor deposition process. The deposited ruthenium metal layer can be used as a diffusion barrier layer, a seed layer for electroplating, or both.

    摘要翻译： 一种用于形成钌金属层的方法包括在沉积系统的处理室中提供图案化衬底，其中图案化衬底包含一个或多个通孔或沟槽，或其组合，在衬底上以原子形式沉积第一钌金属层 层沉积工艺，以及在热化学气相沉积工艺中在第一钌金属层上沉积第二钌金属层。 沉积的钌金属层可以用作扩散阻挡层，用于电镀的种子层或两者。

    Plasma enhanced atomic layer deposition system and method
    17.
    发明申请
    Plasma enhanced atomic layer deposition system and method 有权
    等离子体增强原子层沉积系统和方法

    公开(公告)号：US20060225655A1

    公开(公告)日：2006-10-12

    申请号：US11094461

    申请日：2005-03-31

    申请人： Jacques Faguet ,  Frank Cerio ,  Tsukasa Matsuda ,  Kaoru Yamamoto

    发明人： Jacques Faguet ,  Frank Cerio ,  Tsukasa Matsuda ,  Kaoru Yamamoto

    IPC分类号： H05H1/24 ,  C23C16/00

    CPC分类号： C23C16/45544 ,  C23C16/4401 ,  C23C16/4409 ,  C23C16/45542 ,  C23C16/5096 ,  H01J37/32477

    摘要： A plasma enhanced atomic layer deposition (PEALD) method and system, the system including a process chamber and a substrate holder provided within the processing chamber and configured to support a substrate on which a predetermined film will be formed. A first process material supply system is configured to supply a first process material to the process chamber, and a second process material supply system configured to supply a second process material to the process chamber in order to provide a reduction reaction with the first process material to form the predetermined film on the substrate. Also included is a power source configured to couple electromagnetic power to the process chamber to generate a plasma within the process chamber to facilitate the reduction reaction, and a chamber component exposed to the plasma and made from a film compatible material that is compatible with the predetermined film deposited on the substrate.

    摘要翻译： 等离子体增强原子层沉积（PEALD）方法和系统，该系统包括设置在处理室内的处理室和衬底保持器，并被配置为支撑将在其上形成预定膜的衬底。 第一处理材料供应系统被配置为将第一处理材料供应到处理室，以及第二处理材料供应系统，其被配置为将第二处理材料供应到处理室，以便提供与第一处理材料的还原反应 在基板上形成预定的膜。 还包括被配置为将电磁功率耦合到处理室以在处理室内产生等离子体以促进还原反应的电源，以及暴露于等离子体并由与薄膜相容的材料制成的室组件，其与预定的 膜沉积在基底上。

    Method and system for forming a variable thickness seed layer
    18.
    发明申请
    Method and system for forming a variable thickness seed layer 失效
    用于形成可变厚度种子层的方法和系统

    公开(公告)号：US20060219160A1

    公开(公告)日：2006-10-05

    申请号：US11092266

    申请日：2005-03-29

    申请人： Tsukasa Matsuda

    发明人： Tsukasa Matsuda

    IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

    CPC分类号： C23C16/18 ,  C23C16/16 ,  H01L21/28556 ,  H01L21/76868 ,  H01L21/76873

    摘要： A method and system for forming a variable thickness seed layer on a substrate for a subsequent metal electrochemical plating process, where the seed layer thickness profile improves uniformity of the electroplated metal layer compared to when using a constant thickness seed layer. The method includes providing a substrate in a process chamber containing a showerhead, with the center of the substrate generally aligned with an inner gas delivery zone of the showerhead and the edge of the substrate generally aligned with an outer gas delivery zone of the showerhead. The method further includes depositing a seed layer on the substrate by exposing the substrate to a first gas containing a metal-containing precursor flowed through the inner gas delivery zone, and exposing the substrate to a second gas flowed through the outer gas delivery zone, whereby the seed layer is deposited with a thickness at the edge of the substrate that is less than the thickness at the center of the substrate.

    摘要翻译： 一种用于在随后的金属电化学电镀工艺的衬底上形成可变厚度籽晶层的方法和系统，其中与使用恒定厚度的种子层相比，种子层厚度分布改善了电镀金属层的均匀性。 该方法包括在包含喷头的处理室中提供衬底，其中衬底的中心大致与喷头的内部气体输送区域对准，并且衬底的边缘与喷头的外部气体输送区域大致对准。 该方法还包括通过将衬底暴露于含有流过内部气体输送区的含金属前体的第一气体，并将衬底暴露于流过外部气体输送区的第二气体，从而将衬底层沉积在衬底上，由此 籽晶层在衬底的边缘处被沉积成小于衬底中心的厚度。