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    METHOD FOR MAKING A WELL DISPOSED OVER A SENSOR
    11.
    发明申请
    METHOD FOR MAKING A WELL DISPOSED OVER A SENSOR 审中-公开

    公开(公告)号：US20200090947A1

    公开(公告)日：2020-03-19

    申请号：US16687630

    申请日：2019-11-18

    Applicant: LIFE TECHNOLOGIES CORPORATION

    Inventor： Phil WAGGONER ,  Jordan OWENS

    IPC: H01L21/311 ,  G01N27/414 ,  H01L21/02 ,  H01L21/027 ,  H01L21/285 ,  H01L21/3213

    Abstract: A method for forming a well providing access to a sensor pad includes patterning a first photoresist layer over a dielectric structure disposed over the sensor pad; etching a first access into the dielectric structure and over the sensor pad, the first access having a first characteristic diameter; patterning a second photoresist layer over the dielectric structure; and etching a second access over the dielectric structure and over the sensor pad. The second access has a second characteristic diameter. The first and second accesses overlapping. A diameter ratio of the first characteristic diameter to the second characteristic diameter is not greater than 0.7. The first access exposes the sensor pad. The second access has a bottom depth less than a bottom depth of the first access.

    DEEP MICROWELL DESIGNS AND METHODS OF MAKING THE SAME
    12.
    发明申请
    DEEP MICROWELL DESIGNS AND METHODS OF MAKING THE SAME 审中-公开
    DEEP MICROWELL设计及其制造方法

    公开(公告)号：US20170059517A1

    公开(公告)日：2017-03-02

    申请号：US15247288

    申请日：2016-08-25

    Applicant: LIFE TECHNOLOGIES CORPORATION

    Inventor： James BUSTILLO ,  Jeremy GRAY ,  Jordan OWENS

    IPC: G01N27/414 ,  H01L29/423

    CPC classification number: G01N27/4148 ,  G01N27/4145 ,  H01L29/42324

    Abstract: An apparatus includes a substrate; a gate structure disposed over the substrate and having an upper surface; a well structure disposed over the substrate and defining a well over the upper surface of the gate structure; a conductive layer disposed on the upper surface of the gate structure and at least partially extending along a wall of the well in the well structure; and a dielectric structure disposed over the well structure and defining an opening to the well.

    Abstract translation: 一种装置包括：基板; 栅极结构，设置在所述衬底上并具有上表面; 设置在所述衬底上并且在所述栅极结构的上表面上限定阱的阱结构; 导电层，其设置在所述栅极结构的上表面上，并且至少部分地沿所述阱在所述阱结构中的壁延伸; 以及设置在所述阱结构上并且限定到所述阱的开口的电介质结构。

    Chemical Sensor with Consistent Sensor Surface Areas
    15.
    发明申请
    Chemical Sensor with Consistent Sensor Surface Areas 有权
    化学传感器具有一致的传感器表面区域

    公开(公告)号：US20160077045A1

    公开(公告)日：2016-03-17

    申请号：US14939101

    申请日：2015-11-12

    Applicant: LIFE TECHNOLOGIES CORPORATION

    Inventor： Keith G. FIFE ,  Jordan OWENS ,  Shifeng LI ,  James BUSTILLO

    IPC: G01N27/414 ,  H01L21/28

    CPC classification number: G01N27/414 ,  B01L3/502761 ,  B01L2200/0668 ,  B01L2300/0636 ,  B01L2300/0877 ,  G01N27/4145 ,  G01N27/4148 ,  H01L21/28273

    Abstract: A chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A material defines an opening extending to the upper surface of the floating gate conductor, the material comprising a first dielectric underlying a second dielectric. A conductive element contacts the upper surface of the floating gate conductor and extending a distance along a sidewall of the opening.

    Abstract translation: 描述了化学传感器。 化学传感器包括具有上表面的浮栅导体的化学敏感场效应晶体管。 材料限定了延伸到浮动栅极导体的上表面的开口，该材料包括位于第二电介质下面的第一电介质。 导电元件接触浮栅导体的上表面并沿着开口的侧壁延伸一段距离。

    CHEMICAL SENSOR WITH SIDEWALL SPACER SENSOR SURFACE
    16.
    发明申请
    CHEMICAL SENSOR WITH SIDEWALL SPACER SENSOR SURFACE 审中-公开
    带传感器表面的化学传感器

    公开(公告)号：US20150064829A1

    公开(公告)日：2015-03-05

    申请号：US14543551

    申请日：2014-11-17

    Applicant: LIFE TECHNOLOGIES CORPORATION

    Inventor： Keith G. FIFE ,  James BUSTILLO ,  Jordan OWENS

    IPC: G01N27/414

    CPC classification number: G01N27/414 ,  G01N27/4145

    Abstract: In one implementation, a chemical sensor is described. The chemical sensor includes chemically-sensitive field effect transistor including a floating gate conductor having an upper surface. A dielectric material defines an opening extending to the upper surface of the floating gate conductor. A conductive sidewall spacer is on a sidewall of the opening and contacts the upper surface of the floating gate conductor.

    Abstract translation: 在一个实施方式中，描述了化学传感器。 化学传感器包括具有上表面的浮栅导体的化学敏感场效应晶体管。 介电材料限定了延伸到浮动栅极导体的上表面的开口。 导电侧壁间隔物位于开口的侧壁上并与浮栅导体的上表面接触。

    CHEMICAL DEVICE WITH THIN CONDUCTIVE ELEMENT
    17.
    发明申请
    CHEMICAL DEVICE WITH THIN CONDUCTIVE ELEMENT 审中-公开
    具有薄导电元件的化学器件

    公开(公告)号：US20140264471A1

    公开(公告)日：2014-09-18

    申请号：US14198402

    申请日：2014-03-05

    Applicant: LIFE TECHNOLOGIES CORPORATION

    Inventor： Keith G. FIFE ,  Jordan OWENS ,  Shifeng LI ,  James BUSTILLO

    IPC: G01N27/414

    CPC classification number: G01N27/414 ,  B01L3/502761 ,  B01L2200/0668 ,  B01L2300/0636 ,  B01L2300/0877 ,  G01N27/4145 ,  G01N27/4148

    Abstract: In one implementation, a chemical device is described. The sensor includes a chemically-sensitive field effect transistor including a floating gate structure having a plurality of floating gate conductors electrically coupled to one another. A conductive element overlies and is in communication with an uppermost floating gate conductor in the plurality of floating gate conductors. The conductive element is wider and thinner than the uppermost floating gate conductor. A dielectric material defines an opening extending to an upper surface of the conductive element.

    Abstract translation: 在一个实施方式中，描述了化学装置。 传感器包括化学敏感的场效应晶体管，其包括具有彼此电耦合的多个浮置栅极导体的浮动栅极结构。 导电元件覆盖并与多个浮置栅极导体中的最上面的浮动栅极导体连通。 导电元件比最上面的浮栅导体更宽和更薄。 介电材料限定了延伸到导电元件的上表面的开口。

    CHEMICAL SENSOR WITH AIR VIA
    18.
    发明申请
    CHEMICAL SENSOR WITH AIR VIA 有权

    公开(公告)号：US20220196595A1

    公开(公告)日：2022-06-23

    申请号：US17570273

    申请日：2022-01-06

    Applicant: LIFE TECHNOLOGIES CORPORATION

    Inventor： James LI ,  Jordan OWENS ,  James BUSTILLO

    IPC: G01N27/414 ,  G01N27/12

    Abstract: In one embodiment, a chemical sensor is described. The chemical sensor includes a chemically-sensitive field effect transistor including a floating gate conductor having an upper surface, a first opening extending through a first material and through a portion of a second material located on the first material and a second opening extending from the bottom of the first opening to the top of a liner layer located on the upper surface of the floating gate conductor.

    METHOD OF FORMING ION SENSORS
    19.
    发明申请
    METHOD OF FORMING ION SENSORS 有权

    公开(公告)号：US20210164932A1

    公开(公告)日：2021-06-03

    申请号：US17267772

    申请日：2019-08-16

    Applicant: LIFE TECHNOLOGIES CORPORATION

    Inventor： PHIL WAGGONER ,  Jordan OWENS ,  Scott PARKER

    IPC: G01N27/414 ,  H01L21/3065 ,  H01L21/28

    Abstract: A method for manufacturing a sensor includes etching an insulator layer disposed over a substrate to define an opening exposing a sensor surface of a sensor disposed on the substrate, a native oxide forming on the sensor surface; sputtering the sensor surface with a noble gas to at least partially remove the native oxide from the sensor surface; and annealing the sensor surface in a hydrogen atmosphere.

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