公开(公告)号：US6083321A

公开(公告)日：2000-07-04

申请号：US893462

申请日：1997-07-11

申请人： Lawrence Lei ,  Son Trihn ,  Joel M. Huston

发明人： Lawrence Lei ,  Son Trihn ,  Joel M. Huston

IPC分类号： H01L21/302 ,  C23C14/34 ,  C23C16/448 ,  H01L21/00 ,  H01L21/205 ,  H01L21/3065 ,  C23C16/00

CPC分类号： H01L21/67196 ,  H01L21/67017

摘要： The present invention generally provides a gas delivery system adapted for positioning near the process chamber. More particularly, the present invention provides an apparatus for processing a substrate that includes a process chamber and a gas delivery system. The gas delivery system is in fluid communication with and is adapted to supply one or more process gases and/or carrier/purge gases to the process chamber. The gas delivery system is positioned proximal the process chamber within about two to three feet of the process chamber.

摘要翻译： 本发明通常提供适于在处理室附近定位的气体输送系统。 更具体地说，本发明提供一种用于处理包括处理室和气体输送系统的基板的设备。 气体输送系统与流体连通并且适于将一种或多种工艺气体和/或载体/净化气体供应到处理室。 气体输送系统位于处理室的近处于处理室的大约二至三英尺的范围内。

公开(公告)号：US20080072823A1

公开(公告)日：2008-03-27

申请号：US11870285

申请日：2007-10-10

申请人： Joseph Yudovsky ,  Lawrence Lei ,  Salvador Umotoy ,  Tom Madar ,  Girish Dixit ,  Gwo-Chuan Tzu

发明人： Joseph Yudovsky ,  Lawrence Lei ,  Salvador Umotoy ,  Tom Madar ,  Girish Dixit ,  Gwo-Chuan Tzu

IPC分类号： C23C16/458

CPC分类号： C23C16/4585 ,  C30B25/12 ,  C30B31/14

摘要： The invention provides a removable first edge ring configured for pin and recess/slot coupling with a second edge ring disposed on the substrate support. In one embodiment, a first edge ring includes a plurality of pins, and a second edge ring includes one or more alignment recesses and one or more alignment slots for mating engagement with the pins. Each of the alignment recesses and alignment slots are at least as wide as the corresponding pins, and each of the alignment slots extends in the radial direction a length that is sufficient to compensate for the difference in thermal expansion between the first edge ring and the second edge ring.

摘要翻译： 本发明提供了可拆卸的第一边缘环，其被配置用于与设置在基板支撑件上的第二边缘环的销和凹槽/狭槽联接。 在一个实施例中，第一边缘环包括多个销，并且第二边缘环包括一个或多个对准凹槽和用于与销配合接合的一个或多个对准槽。 每个对准凹槽和对准槽至少与相应的销一样宽，并且每个对准槽在径向方向上延伸的长度足以补偿第一边缘环和第二边缘之间的热膨胀差 边缘环。

公开(公告)号：US20060292874A1

公开(公告)日：2006-12-28

申请号：US11468156

申请日：2006-08-29

申请人： Moris Kori ,  Alfred Mak ,  Jeong Byun ,  Lawrence Lei ,  Hua Chung ,  Ashok Sinha ,  Ming Xi

发明人： Moris Kori ,  Alfred Mak ,  Jeong Byun ,  Lawrence Lei ,  Hua Chung ,  Ashok Sinha ,  Ming Xi

IPC分类号： H01L21/44

CPC分类号： H01L21/76838 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/4401 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45534 ,  C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/38 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to a first reducing gas and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method may further provide exposing the substrate to a deposition gas comprising a second reducing gas and the tungsten precursor gas to form a tungsten bulk layer on the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples include that the ALD and CVD processes are conducted in the same deposition chamber or in different deposition chambers.

摘要翻译： 在一个实施例中，提供了一种在衬底表面上形成钨材料的方法，其包括将衬底定位在沉积室内，将衬底加热至沉积温度，并将衬底依次暴露于第一还原气体和钨前体气体 以在原子层沉积（ALD）工艺期间在衬底上形成钨成核层。 该方法可以进一步提供将衬底暴露于包含第二还原气体和钨前体气体的沉积气体，以在化学气相沉积（CVD）工艺期间在钨成核层上形成钨体层。 实例包括ALD和CVD工艺在相同的沉积室或不同的沉积室中进行。

公开(公告)号：US20050268857A1

公开(公告)日：2005-12-08

申请号：US11003115

申请日：2004-12-03

申请人： Won Bang ,  Yen-Kun Wang ,  Lawrence Lei

发明人： Won Bang ,  Yen-Kun Wang ,  Lawrence Lei

IPC分类号： C23C16/00 ,  H01L21/00

CPC分类号： H01L21/67126

摘要： Techniques for a door system for sealing an opening between two chambers in a semiconductor processing system are described. The opening has at least one angled corner. The door system includes a door, actuator, and sealing member. The door is moveable in the plane and has at least one angled corner to align the door with the opening. The actuator moves the door to selectively open and close the opening. The sealing member seals the opening when the door is in a closed position. The door is sized to apply substantially uniform seal compression to the sealing member when in the closed position.

摘要翻译： 描述了用于密封半导体处理系统中的两个室之间的开口的门系统的技术。 开口至少有一个角角。 门系统包括门，致动器和密封构件。 门可以在平面上移动，并且具有至少一个成角度的角以将门与开口对齐。 致动器移动门以选择性地打开和关闭开口。 当门处于关闭位置时，密封构件密封开口。 门的尺寸适于在处于关闭位置时对密封构件施加基本均匀的密封压缩。

公开(公告)号：US20050014299A1

公开(公告)日：2005-01-20

申请号：US10809908

申请日：2004-03-26

申请人： Susie Yang ,  Lawrence Lei

发明人： Susie Yang ,  Lawrence Lei

IPC分类号： H01L21/321 ,  H01L21/66 ,  H01L21/768

CPC分类号： H01L22/20 ,  H01L21/3212 ,  H01L21/76801 ,  H01L21/7684

摘要： Systems, methods and computer-readable mediums are provided for improving and controlling uniformity of resistance (RS) of metal line, e.g., copper, conductivity in semiconductor processing. In-line or integrated metrology and data feedback and/or feed-forward may be used for monitoring and adjusting the chemical mechanical planarization (CMP) process. Measurements are obtained of deposition layer thickness after the chemical vapor deposition (CVD) process, and of the copper trench profile, including depth, top critical dimension, and bottom critical dimension, following the Etch process. The trench profile measurements are used as feed forward information, together with the CVD measurement, in adjusting the removal rate at the CMP to leave an acceptable amount of material in the copper cross section in the semiconductor product, so that a target resistance is attained.

摘要翻译： 提供了系统，方法和计算机可读介质，用于改善和控制半导体处理中金属线的电阻（RS）均匀性，例如铜，导电性。 在线或集成的计量学和数据反馈和/或前馈可用于监测和调整化学机械平面化（CMP）过程。 在蚀刻过程之后，在化学气相沉积（CVD）工艺之后获得沉积层厚度和铜沟槽轮廓的测量，包括深度，顶部临界尺寸和底部临界尺寸。 沟槽轮廓测量结果与CVD测量一起用于调整CMP处的去除速率，以在半导体产品中的铜截面中留下可接受量的材料，从而获得目标电阻。

公开(公告)号：US06374512B1

公开(公告)日：2002-04-23

申请号：US09631051

申请日：2000-08-01

申请人： Xin Sheng Guo ,  Shin-Hung Li ,  Lawrence Lei

发明人： Xin Sheng Guo ,  Shin-Hung Li ,  Lawrence Lei

IPC分类号： F26B308

CPC分类号： C23C16/45521 ,  C23C16/455 ,  H01L21/67109 ,  H01L21/68 ,  H01L21/6838

摘要： Method and apparatus for reducing contamination of a substrate in a substrate processing system. The apparatus has a substrate support, a gas directing shield circumscribing the substrate support and a shadow ring disposed vertically above the substrate support and gas directing shield for retaining the substrate. The gas directing shield and substrate support define an annular channel that is provided with an edge purge gas. The edge purge gas imparts a force at the edge of a substrate resting on the substrate support the lifts it off the substrate supports and against the shadow ring. The shadow ring further has a plurality of conduits extending from its upper surface to its sidewall to provide a path for the edge purge gas to vent and to impede the flow of process gases under the backside and around the edge of the substrate. The method includes the steps of providing a substrate upon the substrate support, applying a first flow of gas to a first set of ports to lift the substrate off of the substrate support, centering the substrate upon the substrate support and applying a second flow of gas to a second set of ports to establish and maintain thermal control of the substrate.

摘要翻译： 用于减少衬底处理系统中衬底污染的方法和装置。 该装置具有衬底支撑件，围绕衬底支撑件的气体导向屏蔽件和垂直设置在衬底支撑件上方的阴影环和用于保持衬底的气体导向屏蔽件。 气体导向屏蔽和衬底支撑件限定了设置有边缘吹扫气体的环形通道。 边缘吹扫气体在搁置在基板支撑件上的基板的边缘处施加力，将其从基板支撑件提升并抵靠阴影环。 阴影环还具有从其上表面延伸到其侧壁的多个导管，以提供用于边缘吹扫气体排出并阻止在衬底的背面和周围的处理气体流动的路径。 该方法包括以下步骤：在衬底支撑件上提供衬底，将第一气体流施加到第一组端口以将衬底提升离开衬底支撑件，使衬底对准衬底支撑件并施加第二气体流 到第二组端口以建立和保持基板的热控制。

公开(公告)号：US20070254481A1

公开(公告)日：2007-11-01

申请号：US11766121

申请日：2007-06-21

申请人： MORIS KORI ,  Alfred Mak ,  Jeong Byun ,  Lawrence Lei ,  Hua Chung ,  Ashok Sinha ,  Ming Xi

发明人： MORIS KORI ,  Alfred Mak ,  Jeong Byun ,  Lawrence Lei ,  Hua Chung ,  Ashok Sinha ,  Ming Xi

IPC分类号： H01L21/285

CPC分类号： H01L21/76838 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/4401 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45534 ,  C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/38 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： In one embodiment, a method for forming a tungsten material on a substrate surface is provide which includes positioning a substrate within a deposition chamber, heating the substrate to a deposition temperature, and exposing the substrate sequentially to diborane and a tungsten precursor gas to form a tungsten nucleation layer on the substrate during an atomic layer deposition (ALD) process. The method further provides exposing the substrate to a deposition gas comprising hydrogen gas and the tungsten precursor gas to form a tungsten bulk layer over the tungsten nucleation layer during a chemical vapor deposition (CVD) process. Examples are provided which include ALD and CVD processes that may be conducted in the same deposition chamber or in different deposition chambers.

摘要翻译： 在一个实施例中，提供了一种在衬底表面上形成钨材料的方法，其包括将衬底定位在沉积室内，将衬底加热到​​沉积温度，并将衬底依次暴露于乙硼烷和钨前体气体，以形成 在原子层沉积（ALD）过程中在基底上形成钨成核层。 该方法进一步提供将衬底暴露于包含氢气和钨前体气体的沉积气体，以在化学气相沉积（CVD）工艺期间在钨成核层上形成钨体层。 提供了包括可以在相同沉积室或不同沉积室中进行的ALD和CVD工艺的实例。

公开(公告)号：US20060128132A1

公开(公告)日：2006-06-15

申请号：US11338565

申请日：2006-01-24

申请人： Ashok Sinha ,  Ming Xi ,  Moris Kori ,  Alfred Mak ,  Jeong Byun ,  Lawrence Lei ,  Hua Chung

发明人： Ashok Sinha ,  Ming Xi ,  Moris Kori ,  Alfred Mak ,  Jeong Byun ,  Lawrence Lei ,  Hua Chung

IPC分类号： H01L21/44 ,  H01L21/4763

CPC分类号： H01L21/76838 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/4401 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45534 ,  C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/38 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing, onto the substrate, alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer of the second compound.

公开(公告)号：US20050139160A1

公开(公告)日：2005-06-30

申请号：US11059846

申请日：2005-02-16

申请人： Lawrence Lei ,  Alfred Mak ,  Gwo-Chuan Tzu ,  Avi Tepman ,  Ming Xi ,  Walter Glenn

发明人： Lawrence Lei ,  Alfred Mak ,  Gwo-Chuan Tzu ,  Avi Tepman ,  Ming Xi ,  Walter Glenn

IPC分类号： C23C16/44 ,  C23C16/455 ,  H01L21/00 ,  C23C16/00

CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/45521 ,  C23C16/45574 ,  H01L21/6719

摘要： Embodiments of the present invention generally relate to a small volume chamber with a substrate support. One embodiment of a processing chamber includes a first assembly having a substrate support, a pumping ring disposed around a perimeter of the substrate receiving surface, and a gas distribution assembly disposed over the substrate support. The chamber may further include a gas distribution assembly disposed over the substrate support. The first assembly and the gas distribution assembly can be selectively positioned between an open position and a closed position.

摘要翻译： 本发明的实施例通常涉及具有基板支撑件的小容积室。 处理室的一个实施例包括具有衬底支撑件的第一组件，围绕衬底接收表面的周边设置的泵送环以及设置在衬底支撑件上方的气体分配组件。 该腔室还可包括设置在衬底支撑件上方的气体分配组件。 第一组件和气体分配组件可以选择性地定位在打开位置和关闭位置之间。

公开(公告)号：US20050059241A1

公开(公告)日：2005-03-17

申请号：US10951354

申请日：2004-09-29

申请人： Moris Kori ,  Alfred Mak ,  Jeong Byun ,  Lawrence Lei ,  Hua Chung ,  Ashok Sinha ,  Ming Xi

发明人： Moris Kori ,  Alfred Mak ,  Jeong Byun ,  Lawrence Lei ,  Hua Chung ,  Ashok Sinha ,  Ming Xi

IPC分类号： C23C16/02 ,  C23C16/44 ,  C23C16/455 ,  C30B25/02 ,  C30B25/14 ,  H01L21/285 ,  H01L21/768 ,  H01L21/44

CPC分类号： H01L21/76838 ,  C23C16/0272 ,  C23C16/14 ,  C23C16/4401 ,  C23C16/45525 ,  C23C16/45527 ,  C23C16/45529 ,  C23C16/45534 ,  C23C16/45561 ,  C30B25/02 ,  C30B25/14 ,  C30B29/38 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877

摘要： A method and system to reduce the resistance of refractory metal layers by controlling the presence of fluorine contained therein. The present invention is based upon the discovery that when employing ALD techniques to form refractory metal layers on a substrate, the carrier gas employed impacts the presence of fluorine in the resulting layer. As a result, the method features chemisorbing, onto the substrate, alternating monolayers of a first compound and a second compound, with the second compound having fluorine atoms associated therewith, with each of the first and second compounds being introduced into the processing chamber along with a carrier gas to control a quantity of the fluorine atoms associated with the monolayer of the second compound.