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公开(公告)号:US20080072823A1
公开(公告)日:2008-03-27
申请号:US11870285
申请日:2007-10-10
申请人: Joseph Yudovsky , Lawrence Lei , Salvador Umotoy , Tom Madar , Girish Dixit , Gwo-Chuan Tzu
发明人: Joseph Yudovsky , Lawrence Lei , Salvador Umotoy , Tom Madar , Girish Dixit , Gwo-Chuan Tzu
IPC分类号: C23C16/458
CPC分类号: C23C16/4585 , C30B25/12 , C30B31/14
摘要: The invention provides a removable first edge ring configured for pin and recess/slot coupling with a second edge ring disposed on the substrate support. In one embodiment, a first edge ring includes a plurality of pins, and a second edge ring includes one or more alignment recesses and one or more alignment slots for mating engagement with the pins. Each of the alignment recesses and alignment slots are at least as wide as the corresponding pins, and each of the alignment slots extends in the radial direction a length that is sufficient to compensate for the difference in thermal expansion between the first edge ring and the second edge ring.
摘要翻译: 本发明提供了可拆卸的第一边缘环,其被配置用于与设置在基板支撑件上的第二边缘环的销和凹槽/狭槽联接。 在一个实施例中,第一边缘环包括多个销,并且第二边缘环包括一个或多个对准凹槽和用于与销配合接合的一个或多个对准槽。 每个对准凹槽和对准槽至少与相应的销一样宽,并且每个对准槽在径向方向上延伸的长度足以补偿第一边缘环和第二边缘之间的热膨胀差 边缘环。
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公开(公告)号:US20070040265A1
公开(公告)日:2007-02-22
申请号:US11506460
申请日:2006-08-17
申请人: Salvador Umotoy , Lawrence Lei , Gwo-Chuan Tzu , Xiaoxiong Yuan , Michael Jackson , Hymam Lam
发明人: Salvador Umotoy , Lawrence Lei , Gwo-Chuan Tzu , Xiaoxiong Yuan , Michael Jackson , Hymam Lam
IPC分类号: H01L23/12
CPC分类号: H01L21/67103 , C23C16/45521 , C23C16/4586 , C23C16/466 , H01L21/6838 , H01L21/68735 , H01L21/6875 , H01L21/68785
摘要: A substrate support comprises top, middle and bottom plates which are brazed together. The top plate has a top surface with a plurality of outwardly projecting mesas dispersed across a recessed pocket, a network of recessed grooves, a vacuum port terminating in the recessed grooves, and plurality of gas ports. The middle plate has a plurality of middle feedthroughs aligned to corresponding top feedthroughs of the top plate, and the bottom plate has a plurality of bottom feedthroughs aligned to the middle feedthroughs of the middle plate. The top and middle plates are joined by a first brazed bond layer and the middle and bottom plates are joined by a second brazed bond layer.
摘要翻译: 衬底支撑件包括钎焊在一起的顶板,中板和底板。 顶板具有顶表面,多个向外突出的台面分散在凹槽中,凹槽网络,终止于凹槽中的真空端口以及多个气体端口。 中间板具有与顶板的相应的顶部馈通对准的多个中间馈通,并且底板具有与中间板的中间馈通对准的多个底部馈通。 顶板和中间板通过第一钎焊接合层连接,中间和底板通过第二钎焊接合层连接。
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公开(公告)号:US20050139160A1
公开(公告)日:2005-06-30
申请号:US11059846
申请日:2005-02-16
申请人: Lawrence Lei , Alfred Mak , Gwo-Chuan Tzu , Avi Tepman , Ming Xi , Walter Glenn
发明人: Lawrence Lei , Alfred Mak , Gwo-Chuan Tzu , Avi Tepman , Ming Xi , Walter Glenn
IPC分类号: C23C16/44 , C23C16/455 , H01L21/00 , C23C16/00
CPC分类号: C23C16/45565 , C23C16/4412 , C23C16/45521 , C23C16/45574 , H01L21/6719
摘要: Embodiments of the present invention generally relate to a small volume chamber with a substrate support. One embodiment of a processing chamber includes a first assembly having a substrate support, a pumping ring disposed around a perimeter of the substrate receiving surface, and a gas distribution assembly disposed over the substrate support. The chamber may further include a gas distribution assembly disposed over the substrate support. The first assembly and the gas distribution assembly can be selectively positioned between an open position and a closed position.
摘要翻译: 本发明的实施例通常涉及具有基板支撑件的小容积室。 处理室的一个实施例包括具有衬底支撑件的第一组件,围绕衬底接收表面的周边设置的泵送环以及设置在衬底支撑件上方的气体分配组件。 该腔室还可包括设置在衬底支撑件上方的气体分配组件。 第一组件和气体分配组件可以选择性地定位在打开位置和关闭位置之间。
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公开(公告)号:US6050446A
公开(公告)日:2000-04-18
申请号:US893410
申请日:1997-07-11
申请人: Lawrence Lei , Son Trinh , Gwo-Chuan Tzu , Mark Johnson
发明人: Lawrence Lei , Son Trinh , Gwo-Chuan Tzu , Mark Johnson
CPC分类号: H01L21/67017
摘要: A lid assembly for a process chamber. The lid assembly includes a hinge having a hinge mount affixed to the chamber and a hinge arm. A pin extends from the hinge mount through an elongated slot in the hinge arm allowing both rotational and longitudinal motion of the hinge arm relative to the hinge mount. A support frame attached to the hinge arm has two side arms that extend perpendicularly from the hinge arms toward the front of the chamber. The lid is pivotally connected to the side arms by a pivot connection aligned with the center of mass of the lid. A detent extends from the lid through a slot in the side arm at a position offset from the pivot connection. The detent and slot serve to limit the allowable rotation of the lid relative to the lid support frame. Thus, the lid is allowed to float over the opening of the chamber as the lid is closed so that the lid may be positioned in parallel alignment relative to the opening of the chamber before being secured to the chamber.
摘要翻译: 用于处理室的盖组件。 盖组件包括铰链,铰链具有固定到腔室的铰链座和铰链臂。 销从铰链座延伸通过铰链臂中的细长槽,允许铰链臂相对于铰链座的旋转和纵向运动。 附接到铰链臂的支撑框架具有从铰链臂朝向腔室的前部垂直延伸的两个侧臂。 盖通过与盖的质心对准的枢转连接件枢转地连接到侧臂。 制动器在从枢轴连接偏离的位置处从盖子延伸穿过侧臂中的狭槽。 制动器和狭槽用于限制盖相对于盖支撑框架的允许旋转。 因此,当盖被关闭时,允许盖在室的开口上浮动,使得盖可以在被固定到室之前相对于室的开口平行对准地定位。
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公开(公告)号:US20060223286A1
公开(公告)日:2006-10-05
申请号:US11423535
申请日:2006-06-12
申请人: Barry Chin , Alfred Mak , Lawrence Lei , Ming Xi , Hua Chung , Ken Lai , Jeong Byun
发明人: Barry Chin , Alfred Mak , Lawrence Lei , Ming Xi , Hua Chung , Ken Lai , Jeong Byun
CPC分类号: C23C16/45544 , C23C16/45525 , C23C16/45548 , C23C16/45551 , C23C16/4583
摘要: A method and apparatus for atomic layer deposition (ALD) is described. The apparatus comprises a deposition chamber and a wafer support. The deposition chamber is divided into two or more deposition regions that are integrally connected one to another. The wafer support is movable between the two or more interconnected deposition regions within the deposition chamber.
摘要翻译: 描述了用于原子层沉积(ALD)的方法和装置。 该装置包括沉积室和晶片支架。 沉积室被分成两个或更多个彼此一体地连接的沉积区域。 晶片支撑件可在沉积室内的两个或更多互连的沉积区域之间移动。
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公开(公告)号:US06296712B1
公开(公告)日:2001-10-02
申请号:US09055689
申请日:1998-04-06
申请人: Xin Sheng Guo , Mohan Bhan , Justin Jones , Lawrence Lei , Russell Ellwanger , Mei Chang , Ashok Sinha , Avi Tepman
发明人: Xin Sheng Guo , Mohan Bhan , Justin Jones , Lawrence Lei , Russell Ellwanger , Mei Chang , Ashok Sinha , Avi Tepman
IPC分类号: C23C1600
CPC分类号: C23C16/45521 , C23C16/455 , H01L21/68735
摘要: The invention provides a substrate support member and a purge guide for directing purge gas past the edge of a substrate and towards the outer perimeter of the chamber. The purge guide includes a plurality of holes disposed around the inner perimeter thereof to provide a purge gas passage and to prevent purge gas from interfering with the deposition chemistry on the surface of the substrate. A substrate support member is also provided having a vacuum chuck for securing a substrate to the upper surface thereof. The substrate support member preferably includes a shoulder on which the purge guide is supported during processing. The invention also provides a method for shielding an edge of a substrate by flowing a purge gas adjacent the edge of the substrate and then through a plurality of purge holes on a purge guide.
摘要翻译: 本发明提供了一种用于引导吹扫气体穿过衬底的边缘并且朝向腔室的外周边的衬底支撑构件和吹扫引导件。 吹扫引导件包括围绕其内周围设置的多个孔,以提供净化气体通道并防止吹扫气体干扰衬底表面上的沉积化学。 还提供了具有用于将基板固定到其上表面的真空卡盘的基板支撑构件。 衬底支撑构件优选地包括在处理期间支撑清洗引导件的肩部。 本发明还提供了一种用于通过使靠近衬底边缘的吹扫气体流过清洗引导件上的多个吹扫孔来屏蔽衬底边缘的方法。
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公开(公告)号:US20050271814A1
公开(公告)日:2005-12-08
申请号:US11198140
申请日:2005-08-05
申请人: Mei Chang , Lawrence Lei , Walter Glenn
发明人: Mei Chang , Lawrence Lei , Walter Glenn
IPC分类号: C23C16/44 , C23C16/455 , C23C16/458 , C23C16/54 , H01L21/00 , C23C16/00
CPC分类号: H01L21/67167 , C23C16/45512 , C23C16/45519 , C23C16/45551 , C23C16/45565 , C23C16/4586 , C23C16/54 , H01L21/67017 , H01L21/6719
摘要: A multi-station deposition apparatus capable of simultaneous processing multiple substrates using a plurality of stations, where a gas curtain separates the stations. The apparatus further comprises a multi-station platen that supports a plurality of wafers and rotates the wafers into specific deposition positions at which deposition gases are supplied to the wafers. The deposition gases may be supplied to the wafer through single zone or multi-zone gas dispensing nozzles.
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公开(公告)号:US20050083048A1
公开(公告)日:2005-04-21
申请号:US10970351
申请日:2004-10-21
申请人: Lawrence Lei , Chen-An Chen
发明人: Lawrence Lei , Chen-An Chen
CPC分类号: G01B7/105 , C25D7/123 , C25D17/00 , C25D21/12 , H01L21/67253
摘要: Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, and at least one substrate inspection station positioned on either the mainframe or in the loading station. The inspection station is generally configured to use an eddy current sensing device to determine the thickness of a conductive layer on the substrate.
摘要翻译: 本发明的实施方案通常提供电化学电镀系统。 电镀系统包括定位成与主机处理平台连通的基板装载站,位于主机上的至少一个基板镀覆单元以及位于大型机或装载站中的至少一个基板检查站。 检查站通常被配置为使用涡流检测装置来确定衬底上的导电层的厚度。
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公开(公告)号:US20080044568A1
公开(公告)日:2008-02-21
申请号:US11877490
申请日:2007-10-23
申请人: Lawrence Lei , Siqing Lu
发明人: Lawrence Lei , Siqing Lu
IPC分类号: C23C16/00
CPC分类号: C23C16/4557 , C23C16/4401 , C23C16/45563 , C23C16/45578
摘要: Techniques of the present invention are directed to reducing clogging of nozzles. In one embodiment, a method of introducing a gas into a semiconductor processing chamber comprises providing a nozzle having a proximal portion connected to a chamber wall or a gas distribution ring of the semiconductor processing chamber and a distal portion oriented inwardly away from the chamber wall into an interior of the semiconductor processing chamber. The nozzle includes a proximal end coupled with a gas supply, a nozzle opening at a distal end, and a heat shield disposed around at least a portion of the nozzle opening. A nozzle passage extends from the proximal end to the distal end. The method further comprises flowing a gas from the gas supply through the proximal end, the nozzle passage, and the nozzle opening of the nozzle into the interior of the semiconductor processing chamber.
摘要翻译: 本发明的技术涉及减少喷嘴堵塞。 在一个实施例中,将气体引入半导体处理室的方法包括提供喷嘴,该喷嘴具有连接到半导体处理室的室壁或气体分配环的近端部分,以及远离室壁向内取向的远侧部分 半导体处理室的内部。 喷嘴包括与气体供应联接的近端,在远端处的喷嘴开口和围绕喷嘴开口的至少一部分设置的热屏蔽。 喷嘴通道从近端延伸到远端。 该方法还包括将来自气体供应的气体通过近端,喷嘴通道和喷嘴的喷嘴开口流入半导体处理室的内部。
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公开(公告)号:US20060048707A1
公开(公告)日:2006-03-09
申请号:US10934213
申请日:2004-09-03
申请人: Lawrence Lei , Siqing Lu
发明人: Lawrence Lei , Siqing Lu
IPC分类号: C23C16/00 , H01L21/306
CPC分类号: C23C16/4557 , C23C16/4401 , C23C16/45563 , C23C16/45578
摘要: Techniques of the present invention are directed to reducing clogging of nozzles. In one embodiment, a method of introducing a gas into a semiconductor processing chamber comprises providing a nozzle having a proximal portion connected to a chamber wall or a gas distribution ring of the semiconductor processing chamber and a distal portion oriented inwardly away from the chamber wall into an interior of the semiconductor processing chamber. The nozzle includes a proximal end coupled with a gas supply, a nozzle opening at a distal end, and a heat shield disposed around at least a portion of the nozzle opening. A nozzle passage extends from the proximal end to the distal end. The method further comprises flowing a gas from the gas supply through the proximal end, the nozzle passage, and the nozzle opening of the nozzle into the interior of the semiconductor processing chamber.
摘要翻译: 本发明的技术涉及减少喷嘴堵塞。 在一个实施例中,将气体引入半导体处理室的方法包括提供喷嘴,该喷嘴具有连接到半导体处理室的室壁或气体分配环的近端部分,以及远离室壁向内取向的远侧部分 半导体处理室的内部。 喷嘴包括与气体供应联接的近端,在远端处的喷嘴开口和围绕喷嘴开口的至少一部分设置的热屏蔽。 喷嘴通道从近端延伸到远端。 该方法还包括将来自气体供应的气体通过近端,喷嘴通道和喷嘴的喷嘴开口流入半导体处理室的内部。
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