公开(公告)号：US20100107726A1

公开(公告)日：2010-05-06

申请号：US12262974

申请日：2008-10-31

申请人： Leonard Borucki ,  Naoki Rikita ,  Ara Philipossian ,  Fransisca Maria Astrid Sudargho ,  Yun Zhuang

发明人： Leonard Borucki ,  Naoki Rikita ,  Ara Philipossian ,  Fransisca Maria Astrid Sudargho ,  Yun Zhuang

IPC分类号： G01N19/02

CPC分类号： B24B53/12 ,  B24B49/16

摘要： A device for determining the coefficient of friction of diamond conditioner discs and a method of use thereof. The device is a solid base means comprising a block of granite with a smooth flat upper surface, a diamond conditioner disc counter surface means comprising a removable sheet of polycarbonate, a means for moving the diamond conditioner disc comprising an assembly parallel to and perpendicular to the surface of the said slab and overlain material along which a plate, the surface of which is parallel to the surface of the assembly and perpendicular to the surface of the said slab and overlain material, is moved by a screw, a means for securing the diamond conditioner disc comprising a holder bolted to the said plate that is capable of riding just above the surface of the slab and overlain material with an anterior face with respect to the direction of motion that is concave and capable of securely holding a diamond conditioner disc placed grinding face down upon the said overlain material the top of which is open so that load may be applied to the diamond conditioner disc and a means for measuring the shear force imparted by the moving diamond conditioner disc comprising a load cell. Shear force and down force are determined using the above apparatus and the coefficient of friction of the diamond conditioner disc and the said sheet are calculated therefrom.

摘要翻译： 一种用于确定金刚石修整片的摩擦系数的装置及其使用方法。 该装置是一种固体基部装置，包括具有光滑平坦上表面的花岗岩块，金刚石调节盘对置表面装置，包括可移除的聚碳酸酯片，用于移动金刚石调节盘的装置，其包括平行于并垂直于 所述板坯和覆盖材料的表面，其表面平行于组件的表面并且垂直于所述板坯和覆盖材料的表面沿着该板的表面通过螺钉移动，用于固定金刚石的装置 调节盘包括螺栓连接到所述板的支架，其能够刚好在板的表面上方并且相对于凹入的运动方向的前表面覆盖材料，并且能够可靠地保持钻石调节盘放置研磨 面朝下地覆盖所述重叠的材料，其顶部是敞开的，从而可以将负载施加到钻石调节盘和用于的钻石调节盘 测量包括测力传感器的移动金刚石调节盘所施加的剪切力。 使用上述装置确定剪切力和向下力，并由此计算金刚石调节盘和所述片材的摩擦系数。

公开(公告)号：US09296088B2

公开(公告)日：2016-03-29

申请号：US13825111

申请日：2010-12-16

申请人： Leonard John Borucki ,  Yasa Adi Sampurno ,  Ara Philipossian

发明人： Leonard John Borucki ,  Yasa Adi Sampurno ,  Ara Philipossian

IPC分类号： B24B57/04 ,  B24B57/02 ,  B24B37/10 ,  B24B37/04

CPC分类号： B24B57/02 ,  B24B37/04 ,  B24B37/10

摘要： In a certain embodiment, the invention comprises an apparatus for injecting slurry between the wafer and the pad in chemical mechanical polishing of semiconductor wafers comprising an injector the leading edge of which possess bays, depressions or notches that capture spent slurry and hold it long enough for it to transfer heat from the polishing reaction to the pad or through the injector to the new slurry before the said spent slurry is thrown from the polishing pad. The effect is to considerably improve the removal rate, reduce slurry consumption and reduce operating time.

摘要翻译： 在某一实施例中，本发明包括一种用于在半导体晶片的化学机械抛光中在晶片和衬垫之间注入浆料的装置，该装置包括一个注射器，其前端具有捕获废浆料并保持足够长的孔，凹陷或凹口， 它在从抛光垫抛出所述废浆料之前将热量从抛光反应转移到衬垫或通过喷射器传递到新的浆料。 其效果是大大提高了去除率，降低了浆料消耗，缩短了操作时间。

公开(公告)号：US20050164613A1

公开(公告)日：2005-07-28

申请号：US10979212

申请日：2004-11-03

申请人： Yoshiyuki Seike ,  Keiji Miyachi ,  Masahiko Amari ,  Ara Philipossian ,  Toshiro Doi

发明人： Yoshiyuki Seike ,  Keiji Miyachi ,  Masahiko Amari ,  Ara Philipossian ,  Toshiro Doi

IPC分类号： B24B53/007 ,  B24B53/017 ,  H01L21/304 ,  B24B1/00

CPC分类号： B24B53/017

摘要： Dressing is performed by spraying a cleaning liquid onto a polishing pad and after that abrasive slurry injected from a nozzle is supplied to the polishing pad. Provided is a method of conditioning a polishing pad for semiconductor wafer which is suitable for keeping the polishing performance of a polishing pad, provided with a polishing device for semiconductor wafer, in a stable condition for a long time.

摘要翻译： 通过将清洁液喷射到抛光垫上，之后将从喷嘴注入的研磨浆料供应到抛光垫来进行敷料。 本发明提供一种调节用于半导体晶片的抛光垫的方法，该方法适用于将设置有半导体晶片抛光装置的抛光垫的抛光性能长时间保持在稳定状态。

公开(公告)号：US5330920A

公开(公告)日：1994-07-19

申请号：US77570

申请日：1993-06-15

申请人： Hamid R. Soleimani ,  Brian S. Doyle ,  Ara Philipossian

发明人： Hamid R. Soleimani ,  Brian S. Doyle ,  Ara Philipossian

IPC分类号： H01L21/28 ,  H01L21/32 ,  H01L21/8234 ,  H01L29/51 ,  H01L21/265

CPC分类号： H01L21/28185 ,  H01L21/28202 ,  H01L21/2822 ,  H01L21/32 ,  H01L21/823462 ,  H01L29/518 ,  Y10S148/118 ,  Y10S148/163 ,  Y10S438/981

摘要： A method of controlling gate oxide thickness in the fabrication of semiconductor devices wherein a sacrificial gate oxide layer is formed on a semiconductor substrate surface. Nitrogens ions are implanted into select locations of the substrate through the sacrificial gate oxide layer, and the substrate and the gate oxide layer are then thermally annealed. The sacrificial gate oxide layer is then removed and a gate oxide layer is then formed on the substrate layer wherein the portion of the gate oxide layer formed on the nitrogen ion implanted portion of the substrate is thinner than the portion of the gate oxide layer formed on the non-nitrogen ion implanted portion.

摘要翻译： 在半导体器件的制造中控制栅极氧化物厚度的方法，其中在半导体衬底表面上形成牺牲栅极氧化物层。 硝基离子通过牺牲栅极氧化物层注入到衬底的选择位置中，然后将衬底和栅极氧化物层热退火。 然后去除牺牲栅极氧化物层，然后在衬底层上形成栅极氧化物层，其中形成在衬底的氮离子注入部分上的栅极氧化物层的部分比形成在栅极氧化物层上的部分更薄 非氮离子注入部分。

公开(公告)号：US20060217039A1

公开(公告)日：2006-09-28

申请号：US11443390

申请日：2006-05-30

申请人： Toshiro Doi ,  Ara Philipossian ,  Darren DeNardis

发明人： Toshiro Doi ,  Ara Philipossian ,  Darren DeNardis

IPC分类号： B24B49/00

CPC分类号： H01L21/3212 ,  B24B37/0056 ,  B24B37/04 ,  B24B57/02 ,  H01L21/31053

摘要： The polishing apparatus is capable of changing a pH value of slurry to adjust polishing rate and polishing a work piece with high flatness. The polishing apparatus comprises: a pressure vessel; a polishing plate provided in the pressure vessel; a pressing plate pressing a work piece onto the polishing plate; a driving unit relatively moving the polishing plate with respect to the pressing plate so as to polish the work piece; a gas supplying source supplying an alkaline gas or an acid gas into the pressure vessel; a gas discharging section discharging the supplied gas from the pressure vessel; and a slurry supplying unit supplying slurry onto the polishing plate. A pH value of the slurry is adjusted by dissolving the alkaline gas or the acid gas in the slurry.

摘要翻译： 抛光装置能够改变浆料的pH值以调节抛光速率并且以高平坦度抛光工件。 抛光装置包括：压力容器; 设置在压力容器中的抛光板; 将工件压在抛光板上的按压板; 驱动单元，相对于所述加压板相对地移动所述抛光板以抛光所述工件; 向压力容器供给碱性气体或酸性气体的气体供给源; 气体排出部，从所述压力容器排出供给气体; 以及将浆料供给到研磨板上的浆料供给单元。 通过将碱性气体或酸性气体溶解在浆料中来调节浆料的pH值。

公开(公告)号：US5407850A

公开(公告)日：1995-04-18

申请号：US85321

申请日：1993-06-29

申请人： Brian S. Doyle ,  Ara Philipossian

发明人： Brian S. Doyle ,  Ara Philipossian

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L29/51 ,  H01L21/265 ,  H01L21/335

CPC分类号： H01L21/28185 ,  H01L29/51 ,  H01L29/513 ,  H01L29/66772 ,  H01L21/28194 ,  H01L21/28211 ,  Y10S438/91

摘要： Threshold optimization for SOI transistors is achieved through the formation of a layer of positive charge within the gate to correspond to the positive polarity formed in the substrate by ion implantation for threshold voltage control. A positive charge layer is formed by furnishing sulfur ions on the substrate before growth of an oxide to form a portion of the gate oxide. The sulfur will form a charge layer on the surface of the oxide, and an additional oxide is then deposited on the same to form the gate oxide as a sandwich with the positive charge layer in the same.

摘要翻译： SOI晶体管的阈值优化通过在栅极内形成正电荷层来实现，以对应于通过用于阈值电压控制的离子注入在衬底中形成的正极性。 通过在生长氧化物之前在衬底上提供硫离子以形成栅极氧化物的一部分来形成正电荷层。 硫将在氧化物的表面上形成电荷层，然后在其上沉积另外的氧化物以形成作为三明治的栅极氧化物，其中正电荷层在其中。

公开(公告)号：US5248253A

公开(公告)日：1993-09-28

申请号：US826860

申请日：1992-01-28

申请人： Ara Philipossian ,  Edward W. Culley

发明人： Ara Philipossian ,  Edward W. Culley

IPC分类号： C23C16/455 ,  C30B25/14 ,  H01L21/00

CPC分类号： H01L21/67115 ,  C23C16/455 ,  C30B25/14 ,  H01L21/67754

摘要： A tube furnace used for high-temperature processing of semiconductor wafers or the like employs features to improve the gas flow. A primary feature of this invention is improving the plug flow characteristics of the furnace by preventing the undesirable elongation of the gas jet entering the reaction system through the injector nozzle. This elongated gas jet induces unwanted turbulence within the system and causes premature and incomplete mixing of reactant gases in the longitudinal direction. Improvement in plug flow characteristics is attained by use of a quartz baffle at the entrance region of the reactor located a distance from the gas inlet. The shape and location of the baffle are such that it acts as a physical barrier against the elongated gas jet and confines the turbulence in the initial fill chamber created by the entrance region of the reactor and the baffle.

摘要翻译： 用于半导体晶片等的高温处理的管式炉具有改善气体流动的特征。 本发明的主要特征是通过防止通过喷射器喷嘴进入反应系统的气体射流的不期望的伸长来改善炉的活塞流动特性。 这种细长的气体射流在系统内引起不想要的湍流，并导致反应气体在纵向上的过早和不完全混合。 插塞流动特性的改善是通过在距离气体入口一定距离的反应器的入口区域使用石英挡板来实现的。 挡板的形状和位置使得其作为抵抗细长气体射流的物理屏障，并将湍流限制在由反应器的入口区域和挡板产生的初始填充室中。

公开(公告)号：US5064367A

公开(公告)日：1991-11-12

申请号：US563937

申请日：1990-08-06

申请人： Ara Philipossian

发明人： Ara Philipossian

IPC分类号： C30B31/16 ,  F27B17/00

CPC分类号： C30B31/16 ,  F27B17/0025

摘要： A tube furnace used for high-temperature processing of semiconductor wafers or the like employs a cone-like shape for the gas inlet or nozzle where the reactant or insert gas enters the furnace tube. This conical nozzle produces a gas flow of faster velocities, following the flow streamlines, and avoids or minimizes recirculating gas cells. The amount of gas used in purging a tube with this configuration is reduced, and the time needed for thorough purging is also reduced. Greater process control, and enhanced process reproducibility, are also possible because of the reduction in overlap of process steps permitted by the faster purging. This feature of faster purging can, in addition, reduce the infiltration of ambient air which occurs during any processing step.

摘要翻译： 用于半导体晶片等的高温处理的管式炉子对于反应物或插入气体进入炉管的气体入口或喷嘴采用锥形。 该锥形喷嘴在流动流线之后产生更快速度的气流，并避免或最小化再循环气体单元。 用于清洗具有这种构造的管的气体量减少，彻底清洗所需的时间也减少。 更大的过程控制和增强的过程重复性也是可能的，因为减少快速清洗允许的工艺步骤的重叠。 此外，这种快速清洗的特征还可以减少在任何处理步骤期间发生的环境空气的渗透。

公开(公告)号：US5387530A

公开(公告)日：1995-02-07

申请号：US85002

申请日：1993-06-29

申请人： Brian S. Doyle ,  Ara Philipossian

发明人： Brian S. Doyle ,  Ara Philipossian

IPC分类号： H01L21/28 ,  H01L21/306 ,  H01L21/316 ,  H01L21/336 ,  H01L29/49 ,  H01L29/51 ,  H01L21/265

CPC分类号： H01L21/28194 ,  H01L21/02052 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02307 ,  H01L21/28167 ,  H01L21/31662 ,  H01L29/4908 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66772 ,  H01L21/28211 ,  Y10S438/91

摘要： Threshold optimization for SOI transistors is achieved through the formation of a layer of charge within the gate oxide, which layer has a polarity corresponding to that of the ion implantation for threshold voltage control. A negative charge layer is formed by furnishing trace amounts of aluminum on the substrate before growth of an oxide to form a portion of the gate oxide. The aluminum will form a charge layer on the surface of the oxide and an additional oxide is then deposited on the same to form the gate oxide as a sandwich with the charge layer in the same.

摘要翻译： 通过在栅极氧化物内形成电荷层来实现SOI晶体管的阈值优化，该层具有对应于用于阈值电压控制的离子注入的极性。 通过在生长氧化物之前在衬底上提供痕量的铝以形成栅极氧化物的一部分来形成负电荷层。 铝将在氧化物的表面上形成电荷层，然后在其上沉积另外的氧化物以形成作为三明治的栅极氧化物，其中电荷层在其中。

公开(公告)号：US5256060A

公开(公告)日：1993-10-26

申请号：US827003

申请日：1992-01-28

申请人： Ara Philipossian ,  Edward W. Culley

发明人： Ara Philipossian ,  Edward W. Culley

IPC分类号： C23C16/455 ,  C30B25/14 ,  C30B31/16 ,  F27D3/00

CPC分类号： C30B31/16 ,  C23C16/455 ,  C30B25/14

摘要： A tube furnace used for high-temperature processing of semiconductor wafers or the like employs features to improve the gas flow. One feature is reducing, or essentially eliminating, regions of gas recirculation in the outer annular region inherently present in a horizontal hot-wall atmospheric oxidation reactor equipped with a tubular cantilever for holding semiconductor wafers. The annular region is effectively isolated from the rest of the reactor by a solid circular quartz ring or barrier formed on the inner wall of the furnace tube, acting as a physical barrier against gas penetration inside the outer annulus.

摘要翻译： 用于半导体晶片等的高温处理的管式炉具有改善气体流动的特征。 一个特征是减少或基本消除了在装有用于保持半导体晶片的管状悬臂的水平热壁大气氧化反应器中固有地存在的外环形区域中的气体再循环区域。 环形区域通过形成在炉管的内壁上的实心圆形石英环或阻挡层与反应器的其余部分有效隔离，用作在外环内的气体渗透的物理屏障。