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    Wavelength converting material, and light emitting device
    14.
    发明授权
    Wavelength converting material, and light emitting device 有权

    公开(公告)号：US11355675B2

    公开(公告)日：2022-06-07

    申请号：US16687634

    申请日：2019-11-18

    Applicant: Lextar Electronics Corporation

    Inventor： Chang-Zhi Zhong ,  Hung-Chun Tong ,  Yu-Chun Lee ,  Tzong-Liang Tsai

    IPC: C09K11/02 ,  C09K11/88 ,  H01L33/50 ,  H01L33/56 ,  H01L33/44 ,  H01L33/06 ,  H01L51/00

    Abstract: A wavelength converting material includes a luminous core and a first protective layer. The first protective layer covers the luminous core, in which the first protective layer includes silicon dioxide, and in silicon atoms of the silicon dioxide, the silicon atom of the zeroth configuration (Q0) does not connect with any siloxy group, and the silicon atom of the first configuration (Q1) connects with one siloxy group, and the silicon atom of the second configuration (Q2) connects with two siloxy groups, and the silicon atom of the third configuration (Q3) connects with three siloxy groups, and the silicon atom of the fourth configuration (Q4) connects with four siloxy groups, in which a total amount of the silicon atoms of the third configuration and the fourth configuration is greater than a total amount of the silicon atoms of the zeroth configuration, the first configuration and the second configuration.

    Light-emitting package structure
    15.
    发明授权
    Light-emitting package structure 有权

    公开(公告)号：US11302678B2

    公开(公告)日：2022-04-12

    申请号：US16699091

    申请日：2019-11-28

    Applicant: Lextar Electronics Corporation

    Inventor： Hung-Chun Tong ,  Fu-Hsin Chen ,  Wen-Wan Tai ,  Yu-Chun Lee ,  Tzong-Liang Tsai

    IPC: H01L25/075 ,  H01L33/58 ,  H01L33/52 ,  H01L33/50

    Abstract: A light-emitting package structure includes a light transmissive adhesive layer, a substrate, and at least one light-emitting diode chip. The light transmissive adhesive layer includes a first surface and a second surface facing away from the first surface. The substrate is on the first surface of the light transmissive adhesive layer. The light-emitting diode chip is on the second surface of the light transmissive adhesive layer. The light transmissive adhesive layer has a first portion and a second portion on the second surface, the first portion surrounds the second portion, a vertical projection area of the second portion on the substrate at least entirely covers a vertical projection area of the light-emitting diode chip on the substrate, and a thickness of the second portion is smaller than or equal to a thickness of the first portion.

    Wavelength converting material and light emitting device
    16.
    发明授权
    Wavelength converting material and light emitting device 有权

    公开(公告)号：US11245056B2

    公开(公告)日：2022-02-08

    申请号：US16698978

    申请日：2019-11-28

    Applicant: Lextar Electronics Corporation

    Inventor： Chang-Zhi Zhong ,  Hung-Chia Wang ,  Hung-Chun Tong ,  Yu-Chun Lee ,  Tzong-Liang Tsai

    IPC: H01L33/50 ,  H01L33/06 ,  H01L31/0216 ,  C09K11/02 ,  C09K11/77 ,  C09K11/64 ,  B82Y20/00

    Abstract: A wavelength converting material includes a luminous core and a first protective layer. The first protective layer covers the luminous core, and the first protective layer includes aluminum silicate. The aluminum silicate includes a plurality of silicon atoms, each of the silicon atoms is one of a zeroth configuration Q4(0Al), first configuration Q4(1Al), second configuration Q4(2Al), third configuration Q4(3Al), and fourth configuration Q4(4Al). The silicon atoms of the zeroth configuration do not connect with aluminum oxide group, and the silicon atoms of the first, second, third, and fourth configurations respectively connect with one, two, three, and four aluminum oxide group(s). A total number of the silicon atoms of the third configuration and the fourth configuration is larger than a total number of the silicon atoms of the zeroth configuration, the first configuration, and the second configuration.

    Light emitting diode device and manufacturing method thereof
    18.
    发明授权
    Light emitting diode device and manufacturing method thereof 有权

    公开(公告)号：US10720555B2

    公开(公告)日：2020-07-21

    申请号：US16203568

    申请日：2018-11-28

    Applicant: Lextar Electronics Corporation

    Inventor： Hung-Chun Tong ,  Chang-Zhi Zhong ,  Fu-Hsin Chen ,  Yu-Chun Lee

    IPC: H01L33/50 ,  H01L33/54 ,  H01L33/60 ,  H01L33/62 ,  H01L33/20 ,  H01L33/00 ,  H01L33/64

    Abstract: A light emitting diode device includes a light emitting diode chip, a wavelength conversion layer including a bottom surface facing a top surface of the light emitting diode chip, and an interlayer having a first portion between the light emitting diode chip and a part of the bottom surface of the wavelength conversion layer, and a second portion extending from the first portion and connected between a remaining part of the bottom surface of the wavelength conversion layer and a side surface of the light emitting diode chip. The second portion has a side surface including a linear surface substantially aligning with a side surface of the wavelength conversion layer, and a curved surface having a first end connected to the linear surface and a second end connected to the side surface of the light emitting diode chip. The linear surface and the curved surface define a chamfer angle.

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