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    Dielectric doped, Sb-rich GST phase change memory
    11.
    发明授权
    Dielectric doped, Sb-rich GST phase change memory 有权

    公开(公告)号：US10050196B1

    公开(公告)日：2018-08-14

    申请号：US15587085

    申请日：2017-05-04

    Applicant: MACRONIX INTERNATIONAL CO., LTD.

    Inventor： Huai-Yu Cheng ,  Hsiang-Lan Lung

    IPC: G11C11/00 ,  H01L45/00 ,  H01L27/24 ,  G11C13/00

    Abstract: Phase change memory materials in a dielectric-doped, antimony-rich GST family of materials which are antimony rich relative to GST-225, are described that have speed, retention and endurance characteristics suitable for storage class data storage A memory device includes an array of memory cells, where each memory cell includes a first electrode and a second electrode coupled to a memory element. The memory element comprises a body of phase change memory material that comprises a combination of Ge, Sb, and Te with a dielectric additive in amounts effective to provide a crystallization transition temperature greater than to 160° C., greater that 170° C. in some effective examples and greater than 190° C. in other effective examples. A controller is coupled to the array, and configured to execute set operations and reset operations for memory cells in the array.

    Composite target sputtering for forming doped phase change materials
    12.
    发明授权
    Composite target sputtering for forming doped phase change materials 有权
    用于形成掺杂相变材料的复合靶溅射

    公开(公告)号：US08772747B2

    公开(公告)日：2014-07-08

    申请号：US13867525

    申请日：2013-04-22

    Applicant: Macronix International Co., Ltd.

    Inventor： Huai-Yu Cheng ,  Chieh-Fang Chen ,  Hsiang-Lan Lung ,  Yen-Hao Shih ,  Simone Raoux ,  Matthew J. Breitwisch

    IPC: H01L47/00

    CPC classification number: H01L47/00 ,  C23C14/06 ,  C23C14/0623 ,  C23C14/3414 ,  H01L21/06 ,  H01L27/24 ,  H01L45/144 ,  H01L45/1625

    Abstract: A layer of phase change material with silicon or another semiconductor, or a silicon-based or other semiconductor-based additive, is formed using a composite sputter target including the silicon or other semiconductor, and the phase change material. The concentration of silicon or other semiconductor is more than five times greater than the specified concentration of silicon or other semiconductor in the layer being formed. For silicon-based additive in GST-type phase change materials, sputter target may comprise more than 40 at % silicon. Silicon-based or other semiconductor-based additives can be formed using the composite sputter target with a flow of reactive gases, such as oxygen or nitrogen, in the sputter chamber during the deposition.

    Abstract translation: 使用包括硅或其它半导体的复合溅射靶和相变材料形成具有硅或另一半导体或硅基或其它基于半导体的添加剂的相变材料层。 硅或其他半导体的浓度比正在形成的层中规定浓度的硅或其它半导体的浓度高五倍以上。 对于GST型相变材料中的硅基添加剂，溅射靶可以包含超过40at％的硅。 可以在沉积期间使用复合溅射靶在溅射室中形成具有诸如氧或氮的反应气体流的硅基或其它基于半导体的添加剂。

    High thermal stability SiOx doped GeSbTe materials suitable for embedded PCM application
    13.
    发明授权
    High thermal stability SiOx doped GeSbTe materials suitable for embedded PCM application 有权

    公开(公告)号：US11362276B2

    公开(公告)日：2022-06-14

    申请号：US16833349

    申请日：2020-03-27

    Applicant: MACRONIX INTERNATIONAL CO., LTD.

    Inventor： Huai-Yu Cheng ,  Hsiang-Lan Lung

    IPC: H01L45/00 ,  H01L23/12 ,  H01L23/488 ,  G11C11/56 ,  H01L27/24

    Abstract: A phase-change material having specific SiOx doping into special Ge-rich GexSbyTez material is described. Integrated circuits using this phase-change material as memory elements in a memory array can pass the solder bonding criteria mentioned above, while exhibiting good set speeds and demonstrating good 10 year data retention characteristics. A memory cell described herein comprises a first electrode and a second electrode; and a memory element in electrical series between the first and second electrode. The memory element comprises a GexSbyTez phase change material with a silicon oxide additive, including a combination of elements having Ge in a range of 28 to 36 at %, Sb in a range of 10 to 20 at %, Te in a range of 25 to 40 at %, Si in a range of 5 to 10 at %, and O in a range of 12 to 23 at %.

    Phase change memory material and system for embedded memory applications
    18.
    发明授权
    Phase change memory material and system for embedded memory applications 有权
    相变存储器材料和嵌入式存储器应用系统

    公开(公告)号：US09214229B2

    公开(公告)日：2015-12-15

    申请号：US14309776

    申请日：2014-06-19

    Applicant: MACRONIX INTERNATIONAL CO., LTD.

    Inventor： Huai-Yu Cheng ,  Hsiang-Lan Lung ,  Che-Min Lin

    IPC: G11C13/00 ,  H01L45/00

    CPC classification number: G11C13/0069 ,  G11C13/0004 ,  G11C2013/0083 ,  G11C2213/79 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/144 ,  H01L45/1625

    Abstract: A family of phase change materials GewSbxTeyNz having a crystallization temperature greater than 410° C., wherein a Ge atomic concentration is within a range from 43% to 54%, a Sb atomic concentration is within a range from 6% to 13%, a Te atomic concentration is within a range from 14% to 23%, and a N atomic concentration is within a range of 15% to 27%, is described. A method for programming a memory device including such phase change materials is also described.

    Abstract translation: 一种具有大于410℃的结晶温度的相变材料GewSbxTeyNz，其中Ge原子浓度在43％至54％的范围内，Sb原子浓度在6％至13％的范围内，a Te原子浓度在14％至23％的范围内，并且N原子浓度在15％至27％的范围内。 还描述了一种用于编程包括这种相变材料的存储器件的方法。

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