公开(公告)号：US20110210766A1

公开(公告)日：2011-09-01

申请号：US13105021

申请日：2011-05-11

申请人： Takaaki AOKI ,  Shoji Mizuno ,  Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

发明人： Takaaki AOKI ,  Shoji Mizuno ,  Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

IPC分类号： H03B1/00

CPC分类号： H01L27/0629 ,  H01L27/0255 ,  H03K17/063 ,  H03K17/165 ,  H03K17/168 ,  H03K17/567 ,  H03K17/687 ,  H03K2217/0036

摘要： A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.

摘要翻译： 开关电路包括：具有第一电极，第二电极和控制电极的晶体管; 齐纳二极管; 和电容器。 通过切换晶体管的控制电压，第一电极和第二电极之间的连接能够在导通状态和非导通状态之间暂时切换。 齐纳二极管和电容器串联耦合在晶体管的第一电极和控制电极之间。 第一电极是漏极或集电极。

公开(公告)号：US07893458B2

公开(公告)日：2011-02-22

申请号：US11892819

申请日：2007-08-28

申请人： Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yasushi Higuchi ,  Tetsuo Fujii ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

发明人： Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yasushi Higuchi ,  Tetsuo Fujii ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

IPC分类号： H01L29/74 ,  H01L29/76

CPC分类号： H01L27/0727 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/42356 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/7817 ,  H01L29/7821

摘要： A semiconductor device includes: a semiconductor substrate; a lateral MOS transistor disposed in the substrate; a Zener diode disposed in the substrate; and a capacitor disposed in the substrate. The transistor includes a drain and a gate, and the diode and the capacitor are coupled in series between the drain and the gate. This device has minimized dimensions and high switching speed. Further, both of a switching loss and a surge voltage are improved.

摘要翻译： 半导体器件包括：半导体衬底; 设置在基板中的横向MOS晶体管; 设置在基板中的齐纳二极管; 以及设置在基板中的电容器。 晶体管包括漏极和栅极，并且二极管和电容器串联耦合在漏极和栅极之间。 该设备具有最小的尺寸和高切换速度。 此外，改善了开关损耗和浪涌电压两者。

公开(公告)号：US08890252B2

公开(公告)日：2014-11-18

申请号：US13190798

申请日：2011-07-26

申请人： Hirotaka Saikaku ,  Tsuyoshi Yamamoto ,  Shoji Mizuno ,  Masakiyo Sumitomo ,  Tetsuo Fujii ,  Jun Sakakibara ,  Hitoshi Yamaguchi ,  Yoshiyuki Hattori ,  Rie Taguchi ,  Makoto Kuwahara

发明人： Hirotaka Saikaku ,  Tsuyoshi Yamamoto ,  Shoji Mizuno ,  Masakiyo Sumitomo ,  Tetsuo Fujii ,  Jun Sakakibara ,  Hitoshi Yamaguchi ,  Yoshiyuki Hattori ,  Rie Taguchi ,  Makoto Kuwahara

IPC分类号： H01L21/70 ,  H01L21/78 ,  H01L29/739 ,  H01L29/78 ,  H01L29/10 ,  H01L29/40 ,  H01L29/49 ,  H01L29/66 ,  H01L29/06 ,  H01L29/423 ,  H01L29/861 ,  H02M7/00

CPC分类号： H01L29/7813 ,  H01L27/0629 ,  H01L27/0635 ,  H01L29/0634 ,  H01L29/0696 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/4983 ,  H01L29/66734 ,  H01L29/7391 ,  H01L29/7393 ,  H01L29/7397 ,  H01L29/7398 ,  H01L29/7805 ,  H01L29/7819 ,  H01L29/7825 ,  H01L29/7831 ,  H01L29/861 ,  H01L2924/0002 ,  H02M7/003 ,  H01L2924/00

摘要： A semiconductor device includes a switching element having: a drift layer; a base region; an element-side first impurity region in the base region; an element-side gate electrode sandwiched between the first impurity region and the drift layer; a second impurity region contacting the drift layer; an element-side first electrode coupled with the element-side first impurity region and the base region; and an element-side second electrode coupled with the second impurity region, and a FWD having: a first conductive layer; a second conductive layer; a diode-side first electrode coupled to the second conductive layer; a diode-side second electrode coupled to the first conductive layer; a diode-side first impurity region in the second conductive layer; and a diode-side gate electrode in the second conductive layer sandwiched between first impurity region and the first conductive layer and having a first gate electrode as an excess carrier injection suppression gate.

摘要翻译： 一种半导体器件包括：具有漂移层的开关元件; 基地区 在基极区域中的元件侧第一杂质区域; 夹在所述第一杂质区域和所述漂移层之间的元件侧栅电极; 接触漂移层的第二杂质区; 与元件侧第一杂质区域和基极区域耦合的元件侧第一电极; 以及与所述第二杂质区域耦合的元件侧第二电极以及具有：第一导电层的FWD; 第二导电层; 耦合到所述第二导电层的二极管侧第一电极; 耦合到所述第一导电层的二极管侧第二电极; 第二导电层中的二极管侧第一杂质区; 以及夹在第一杂质区域和第一导电层之间的第二导电层中的二极管侧栅电极，并具有作为过剩载流子注入抑制栅极的第一栅极电极。

公开(公告)号：US08519748B2

公开(公告)日：2013-08-27

申请号：US13433624

申请日：2012-03-29

申请人： Takaaki Aoki ,  Shoji Mizuno ,  Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

发明人： Takaaki Aoki ,  Shoji Mizuno ,  Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

IPC分类号： H03K3/00

CPC分类号： H01L27/0629 ,  H01L27/0255 ,  H03K17/063 ,  H03K17/165 ,  H03K17/168 ,  H03K17/567 ,  H03K17/687 ,  H03K2217/0036

摘要： A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.

摘要翻译： 开关电路包括：具有第一电极，第二电极和控制电极的晶体管; 齐纳二极管; 和电容器。 通过切换晶体管的控制电压，第一电极和第二电极之间的连接能够在导通状态和非导通状态之间暂时切换。 齐纳二极管和电容器串联耦合在晶体管的第一电极和控制电极之间。 第一电极是漏极或集电极。

公开(公告)号：US08179169B2

公开(公告)日：2012-05-15

申请号：US13105021

申请日：2011-05-11

申请人： Takaaki Aoki ,  Shoji Mizuno ,  Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

发明人： Takaaki Aoki ,  Shoji Mizuno ,  Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

IPC分类号： H03K3/00

CPC分类号： H01L27/0629 ,  H01L27/0255 ,  H03K17/063 ,  H03K17/165 ,  H03K17/168 ,  H03K17/567 ,  H03K17/687 ,  H03K2217/0036

摘要： A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.

摘要翻译： 开关电路包括：具有第一电极，第二电极和控制电极的晶体管; 齐纳二极管; 和电容器。 通过切换晶体管的控制电压，第一电极和第二电极之间的连接能够在导通状态和非导通状态之间暂时切换。 齐纳二极管和电容器串联耦合在晶体管的第一电极和控制电极之间。 第一电极是漏极或集电极。

公开(公告)号：US20100102857A1

公开(公告)日：2010-04-29

申请号：US12654323

申请日：2009-12-17

申请人： Takaaki Aoki ,  Shoji Mizuno ,  Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

发明人： Takaaki Aoki ,  Shoji Mizuno ,  Shigeki Takahashi ,  Takashi Nakano ,  Nozomu Akagi ,  Yoshiyuki Hattori ,  Makoto Kuwahara ,  Kyoko Okada

IPC分类号： H03K3/00 ,  H03K17/56

CPC分类号： H01L27/0629 ,  H01L27/0255 ,  H03K17/063 ,  H03K17/165 ,  H03K17/168 ,  H03K17/567 ,  H03K17/687 ,  H03K2217/0036

摘要： A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.

摘要翻译： 开关电路包括：具有第一电极，第二电极和控制电极的晶体管; 齐纳二极管; 和电容器。 第一电极和第二电极之间的连接能够通过切换晶体管的控制电压来暂时地在状态和非导通状态之间切换。 齐纳二极管和电容器串联耦合在晶体管的第一电极和控制电极之间。 第一电极是漏极或集电极。

公开(公告)号：US20080230834A1

公开(公告)日：2008-09-25

申请号：US12071411

申请日：2008-02-21

申请人： Nozomu Akagi ,  Shigeki Takahashi ,  Takashi Nakano ,  Yasushi Higuchi ,  Tetsuo Fujii ,  Yoshiyuki Hattori ,  Makoto Kuwahara

发明人： Nozomu Akagi ,  Shigeki Takahashi ,  Takashi Nakano ,  Yasushi Higuchi ,  Tetsuo Fujii ,  Yoshiyuki Hattori ,  Makoto Kuwahara

IPC分类号： H01L27/06

CPC分类号： H01L29/7817 ,  H01L27/0738 ,  H01L29/0696 ,  H01L29/41758 ,  H01L29/42368 ,  H01L29/435 ,  H01L29/4933 ,  H01L29/7824 ,  H01L29/7835

摘要： A semiconductor apparatus comprises: a semiconductor substrate; and a lateral type MIS transistor disposed on a surface part of the semiconductor substrate. The lateral type MIS transistor includes: a line coupled with a gate of the lateral type MIS transistor; a polycrystalline silicon resistor that is provided in the line, and that has a conductivity type opposite to a drain of the lateral type MIS transistor; and an insulating layer through which a drain voltage of the lateral type MIS transistor is applied to the polycrystalline silicon resistor.

摘要翻译： 半导体装置包括：半导体衬底; 以及设置在半导体衬底的表面部分上的横向型MIS晶体管。 横向型MIS晶体管包括：与横向型MIS晶体管的栅极耦合的线; 该多晶硅电阻器设置在该线路中，并且具有与横向型MIS晶体管的漏极相反的导电类型; 以及绝缘层，横向型MIS晶体管的漏极电压通过该绝缘层施加到多晶硅电阻器。

公开(公告)号：US09478621B2

公开(公告)日：2016-10-25

申请号：US14238915

申请日：2012-09-04

申请人： Nozomu Akagi ,  Yuma Kagata ,  Makoto Kuwahara

发明人： Nozomu Akagi ,  Yuma Kagata ,  Makoto Kuwahara

IPC分类号： H01L29/66 ,  H01L29/40 ,  H01L29/78 ,  H01L29/06 ,  H01L29/08

CPC分类号： H01L29/405 ,  H01L29/0634 ,  H01L29/0878 ,  H01L29/404 ,  H01L29/7803 ,  H01L29/7808 ,  H01L29/7811 ,  H01L29/7813

摘要： The element electrodes of a semiconductor element are disposed in a cell region, while an outermost peripheral electrode electrically connected to a semiconductor substrate is disposed in a peripheral region. In the peripheral region, a second-conductivity-type layer is disposed above a super-junction structure. A potential division region is disposed above the second-conductivity-type layer to electrically connect the element electrodes and the outermost peripheral electrode and also divide the voltage between the element electrodes and the outermost peripheral electrode into a plurality of stages. A part of the potential division region overlaps the peripheral region when viewed from the thickness direction of the semiconductor substrate.

摘要翻译： 半导体元件的元件电极设置在单元区域中，而与半导体基板电连接的最外周电极设置在周边区域中。 在外围区域中，在超结结构上方设置第二导电型层。 电位分割区域设置在第二导电型层之上，以电连接元件电极和最外周电极，并且还将元件电极和最外周电极之间的电压分成多个级。 当从半导体衬底的厚度方向观察时，电势分割区域的一部分与周边区域重叠。

公开(公告)号：US08841615B2

公开(公告)日：2014-09-23

申请号：US13637227

申请日：2011-02-22

申请人： Nobuo Tanaka ,  Tsutomu Nakanishi ,  Yoshikazu Takeda ,  Hidefumi Asano ,  Koh Saitoh ,  Toru Ujihara ,  Makoto Kuwahara

发明人： Nobuo Tanaka ,  Tsutomu Nakanishi ,  Yoshikazu Takeda ,  Hidefumi Asano ,  Koh Saitoh ,  Toru Ujihara ,  Makoto Kuwahara

IPC分类号： H01J37/26 ,  H01J37/073

CPC分类号： H01J37/26 ,  H01J37/073 ,  H01J37/265 ,  H01J37/266 ,  H01J2237/06333 ,  H01J2237/06383 ,  H01J2237/24557

摘要： An electron microscope which utilizes a polarized electron beam and can obtain a high contrast image of a sample is provided. The microscope includes: a laser; a polarization apparatus that polarizes a laser beam into a circularly polarized laser beam; a semiconductor photocathode that is provided with a strained superlattice semiconductor layer and generates a polarized electron beam when irradiated with the circularly polarized laser beam; a transmission electron microscope that utilizes the polarized electron beam; an electron beam intensity distribution recording apparatus arranged at a face reached by the polarized electron beam that has transmitted through the sample. An electron beam intensity distribution recording apparatus records an intensity distribution before and after the polarization of the electron beam is reversed, and a difference acquisition apparatus calculates a difference therebetween.

摘要翻译： 提供了利用偏振电子束并且可以获得样品的高对比度图像的电子显微镜。 显微镜包括：激光; 将激光束偏振成圆偏振激光束的偏振装置; 半导体光电阴极，其设置有应变超晶格半导体层，并且当被圆偏振激光束照射时产生偏振电子束; 利用偏振电子束的透射电子显微镜; 电子束强度分布记录装置，布置在透过样品的偏振电子束所达到的面上。 电子束强度分布记录装置记录电子束的偏振前后的强度分布，差分获取装置计算其间的差。

公开(公告)号：US5283713A

公开(公告)日：1994-02-01

申请号：US944878

申请日：1992-09-14

申请人： Toshiaki Nagafuji ,  Makoto Kuwahara ,  Kenichi Hatakeyama ,  Yuji Sato

发明人： Toshiaki Nagafuji ,  Makoto Kuwahara ,  Kenichi Hatakeyama ,  Yuji Sato

IPC分类号： H01R13/629 ,  H05K7/14 ,  H05K5/02 ,  B25G3/18 ,  H01R13/62

CPC分类号： H05K7/1409 ,  H01R13/629 ,  Y10T403/604

摘要： The grip of a plug-in module according to the present invention is rotatably supported on the upper side of a circuit board. A first end portion of the grip includes a convex portion which engages with a recessed portion in the housing to prevent the plug-in module from being dislodged from the housing by vibrations or the like. When the first and second engaging end are disengaged and the grip is rotated, a protruding end on one side of the grip abuts and applies pressure to the upper end of the housing to assist in removing the plug-in module from the housing. In addition, the above-described protruding end and an additional protruding end on the other side of the grip may be grasped by a robot to allow insertion or removal of the plug-in module by a robot.

摘要翻译： 根据本发明的插入式模块的把手可旋转地支撑在电路板的上侧。 手柄的第一端部包括与壳体中的凹部接合的凸部，以防止插入式模块通过振动等从壳体移出。 当第一和第二接合端脱离并且把手被旋转时，把手的一侧上的突出端邻接并向壳体的上端施加压力，以帮助将插件模块从壳体移除。 此外，上述突出端和在手柄的另一侧上的另外的突出端可以由机器人掌握，以允许机器人插入或移除插件模块。