公开(公告)号：US5904861A

公开(公告)日：1999-05-18

申请号：US622301

申请日：1996-03-25

申请人： Masahito Ban ,  Tsuyoshi Takenaka ,  Katsumi Suzuki ,  Youichi Enomoto

发明人： Masahito Ban ,  Tsuyoshi Takenaka ,  Katsumi Suzuki ,  Youichi Enomoto

IPC分类号： H01L39/24 ,  C23F1/00

CPC分类号： H01L39/2467

摘要： A superconductive device manufacturing method is disclosed, which can prevent the characteristic deterioration on the processed surface, reduce the number of process steps, and thereby shorten the manufacturing time. The superconductive device manufacturing method comprises the steps of: forming a YBCO film (301) on a substrate (201); forming a mask pattern (302) on the formed YBCO film (301); and etching the YBCO film (301) by use of the formed mask pattern (302) and a plasma including at least oxygen plasma.

摘要翻译： 公开了一种可以防止加工面的特性劣化，减少加工工序数量，从而缩短制造时间的超导体制造方法。 超导器件制造方法包括以下步骤：在衬底（201）上形成YBCO膜（301）; 在形成的YBCO膜（301）上形成掩模图案（302）; 以及通过使用形成的掩模图案（302）和至少包括氧等离子体的等离子体来蚀刻YBCO膜（301）。

公开(公告)号：US5602079A

公开(公告)日：1997-02-11

申请号：US254707

申请日：1994-06-06

申请人： Tsuyoshi Takenaka ,  Katsumi Suzuki ,  Shuichi Fujino ,  Youichi Enomoto

发明人： Tsuyoshi Takenaka ,  Katsumi Suzuki ,  Shuichi Fujino ,  Youichi Enomoto

IPC分类号： B23K26/00 ,  B23K26/12 ,  B23K26/40 ,  B23K26/42 ,  C23F4/04 ,  H01L39/06 ,  H01L39/24

CPC分类号： B23K26/0861 ,  B23K26/032 ,  B23K26/12 ,  B23K26/127 ,  B23K26/351 ,  B23K26/362 ,  B23K26/703 ,  H01L39/2467

摘要： A superconducting device having a superconducting film measures a characteristic such as its resonance frequency while in an environment having a temperature that is less than or equal to its superconducting transition temperature. A laser then thermally etches the superconducting film on the basis of said measurement in the environment having a temperature that is less than or equal to a superconducting transition temperature.

摘要翻译： 具有超导膜的超导装置在温度小于或等于其超导转变温度的环境中测量其谐振频率等特性。 然后，在具有小于或等于超导转变温度的温度的环境中，基于所述测量，热激蚀超导膜。

公开(公告)号：US06724216B2

公开(公告)日：2004-04-20

申请号：US10142932

申请日：2002-05-13

申请人： Hideo Suzuki ,  Shuichi Nagasawa ,  Kazunori Miyahara ,  Youichi Enomoto

发明人： Hideo Suzuki ,  Shuichi Nagasawa ,  Kazunori Miyahara ,  Youichi Enomoto

IPC分类号： H03K19195

CPC分类号： H03K19/1954

摘要： A rapid single-flux-quantum RSFQ logic circuit includes a first circuit portion having a first end grounded and having in-series connected first and second Josephson junctions. A second circuit portion has a first end grounded and has in-series connected third and fourth Josephson junctions. A first inductance element connects a second end of the first circuit portion to a second end of the second circuit portion. A tap is provided in the first inductance element, an input current signal being supplied to the tap. A bias current source is connected to a first connection node between the first and second Josephson junctions. A second inductance element connects the first connection node to a second connection node between the third and fourth Josephson junctions. A superconducting quantum interference device has fifth and sixth Josephson junctions and is coupled to the second inductance element through a magnetic field.

摘要翻译： 快速单通量量子RSFQ逻辑电路包括第一电路部分，其具有接地的第一端并具有串联连接的第一和第二约瑟夫逊结。 第二电路部分具有第一端接地并具有串联连接的第三和第四约瑟夫逊结。 第一电感元件将第一电路部分的第二端连接到第二电路部分的第二端。 在第一电感元件中提供抽头，输入电流信号被提供给抽头。 偏置电流源连接到第一和第二约瑟夫逊结之间的第一连接节点。 第二电感元件将第一连接节点连接到第三和第四约瑟夫森结之间的第二连接节点。 超导量子干涉装置具有第五和第六约瑟夫逊结，并且通过磁场耦合到第二电感元件。

公开(公告)号：US06242939B1

公开(公告)日：2001-06-05

申请号：US09517444

申请日：2000-03-02

申请人： Shuichi Nagasawa ,  Kazunori Miyahara ,  Youichi Enomoto

发明人： Shuichi Nagasawa ,  Kazunori Miyahara ,  Youichi Enomoto

IPC分类号： H03K19195

CPC分类号： G11C11/44 ,  H03K19/1958

摘要： A superconducting circuit device of a voltage-type logic device is large in current driving capability and, accordingly, electric power consumption; however, the switching speed is not so fast, and a superconducting circuit device of a fluxoid-type logic device is small in current driving capability and, accordingly, the electric power consumption; however the switching speed is faster than that of the superconducting circuit device of the voltage-type logic device, wherein the superconducting circuit device of the voltage-type logic device and the superconducting circuit device of the fluxoid-type logic device are selectively used in a superconducting circuit such as a superconducting random access memory, a superconducting NOR circuit and a superconducting signal converting circuit so as to realize small electric power consumption and high-speed switching action.

摘要翻译： 电压型逻辑器件的超导电路器件的电流驱动能力大，因此电耗; 然而，切换速度不是那么快，而磁通型逻辑装置的超导电路装置的电流驱动能力较小，因此电力消耗; 然而开关速度比电压型逻辑器件的超导电路器件更快，其中电压型逻辑器件的超导电路器件和磁通型逻辑器件的超导电路器件选择性地用于 超导电路如超导随机存取存储器，超导NOR电路和超导信号转换电路，以实现小功耗和高速切换动作。

公开(公告)号：US6074768A

公开(公告)日：2000-06-13

申请号：US212721

申请日：1998-12-16

申请人： Yoshinori Matsunaga ,  Shuichi Fujino ,  Akihiro Odagawa ,  Youichi Enomoto

发明人： Yoshinori Matsunaga ,  Shuichi Fujino ,  Akihiro Odagawa ,  Youichi Enomoto

IPC分类号： C01G1/00 ,  C01G3/00 ,  C04B41/50 ,  C04B41/85 ,  C23C14/08 ,  C30B23/02 ,  C30B23/08 ,  C30B25/06 ,  C30B25/18 ,  C30B29/22 ,  H01L39/02 ,  H01L39/24 ,  B32B9/00 ,  B32B12/00

CPC分类号： C04B41/009 ,  C04B41/5074 ,  C04B41/85 ,  C23C14/087 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  H01L39/2458 ,  Y10S428/93 ,  Y10S505/742

摘要： A process for forming a laminate of 123-type copper oxide superconductor thin films having dissimilar crystal axis orientations, a laminate of 123-type thin copper oxide superconductor layers exhibiting excellent superconducting property, and wiring for Josephson junction. A c-axis oriented single crystalline thin film of an oxide superconductor having a Y:Ba:Cu atomic ratio of substantially 1:2:3 and a lattice constant of 11.60 angstroms.ltoreq.c.ltoreq.11.70 angstroms at a temperature of 20.degree. C. under an oxygen partial pressure of 160 Torr is formed on a single crystalline substrate, and an a-axis oriented single crystalline thin film of said oxide superconductor is formed on the above laminated film relying upon a sputter deposition method.

摘要翻译： 形成具有不同晶轴取向的123型铜氧化物超导体薄膜的层叠体的制造方法，具有优异的超导性的123型薄铜氧化物超导体层的层叠体和约瑟夫逊结的配线。 氧化物超导体的c轴取向单晶薄膜，其Y：Ba：Cu原子比基本上为1:2:3，晶格常数为11.60埃，在20℃的温度下为11.70埃 在单晶衬底上形成氧分压为160Torr的DEG，并且根据溅射沉积方法在上述层叠膜上形成所述氧化物超导体的a轴取向单晶薄膜。

公开(公告)号：US6011981A

公开(公告)日：2000-01-04

申请号：US814172

申请日：1997-03-10

申请人： Gustavo Alvarez ,  Furen Wang ,  Jian-Guo Wen ,  Naoki Koshizuka ,  Youichi Enomoto ,  Tadashi Utagawa ,  Shoji Tanaka

发明人： Gustavo Alvarez ,  Furen Wang ,  Jian-Guo Wen ,  Naoki Koshizuka ,  Youichi Enomoto ,  Tadashi Utagawa ,  Shoji Tanaka

IPC分类号： H01L39/12 ,  H01L39/22

CPC分类号： H01L39/128 ,  H01L39/225 ,  Y10S505/702

摘要： An oxide superconducting multilayered thin film structure having a laminated layer structure of oxide superconductor thin film layers and non-superconductor thin film layers constituted by a combination of material groups for making strain free interfaces among both thin film layers. For example, an oxide superconductor multilayered film constituted by a laminated layer structure where thin films of an oxide superconductor represented by the chemical formula of M'Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (M'; a rare earth element of Nd, Sm, Eu or the like or an alloy of these, .delta.; oxygen depletion amount) and thin films of an oxide represented by the chemical formula of M*Ba.sub.2 Cu.sub.3 O.sub.7-.delta. (M*; an element of Pr, Sc or the like or an alloy of these, .delta.; oxygen depletion amount) are alternately stacked. The oxide thin films are thin films fabricated by a pulsed laser deposition process or a sputtering process. A Josephson device can be provided by using the multilayered film.

摘要翻译： 一种氧化物超导多层薄膜结构，其具有由氧化物超导体薄膜层和非超导体薄膜层组成的层叠层结构，所述非超导薄膜层由两个薄膜层之间形成无应力界面的材料组合组成。 例如，由M'Ba2Cu3O7-δ（M'，Nd，Sm，Eu等的稀土元素表示的氧化物超导体的薄膜的层叠层结构构成的氧化物超导体多层膜， 这些的合金，δ;氧耗尽量）和由化学式M * Ba2Cu3O7-δ（M *; Pr，Sc等元素或它们的合金，δ;氧气）表示的氧化物薄膜 耗尽量）交替堆叠。 氧化物薄膜是通过脉冲激光沉积工艺或溅射工艺制造的薄膜。 可以通过使用多层膜来提供约瑟夫森装置。

公开(公告)号：US5883051A

公开(公告)日：1999-03-16

申请号：US735117

申请日：1996-10-22

申请人： Yoshihiro Ishimaru ,  Jian-Guo Wen ,  Kunihiko Hayashi ,  Youichi Enomoto ,  Naoki Koshizuka ,  Shoji Tanaka

发明人： Yoshihiro Ishimaru ,  Jian-Guo Wen ,  Kunihiko Hayashi ,  Youichi Enomoto ,  Naoki Koshizuka ,  Shoji Tanaka

IPC分类号： H01L39/22 ,  H01L39/24

CPC分类号： H01L39/225 ,  Y10S428/93 ,  Y10S505/702

摘要： A superconducting Josephson junction element including a first, a-axis oriented, superconductive metal oxide crystal grain having a first area of a {001} plane, and a second, c-axis oriented, superconductive metal oxide crystal grain having a second area of a {110} plane, wherein the first and second crystal grains are in contact with each other at the first and second areas to form a grain boundary therebetween.

摘要翻译： 一种超导约瑟夫逊结元件，其包括具有第一面积{001}面的第一，a轴取向的超导金属氧化物晶粒和第二c轴取向的超导金属氧化物晶粒，其具有第二面积 {110}面，其中第一和第二晶粒在第一和第二区域彼此接触以在它们之间形成晶界。

公开(公告)号：US5728214A

公开(公告)日：1998-03-17

申请号：US524490

申请日：1995-09-06

申请人： Masaya Konishi ,  Hiroyuki Fuke ,  Youichi Enomoto ,  Yuh Shiohara ,  Shoji Tanaka

发明人： Masaya Konishi ,  Hiroyuki Fuke ,  Youichi Enomoto ,  Yuh Shiohara ,  Shoji Tanaka

IPC分类号： C30B29/22 ,  C01G1/00 ,  C01G3/00 ,  C30B33/00 ,  H01L21/203 ,  C30B25/02

CPC分类号： C30B33/00 ,  C30B29/22 ,  C30B29/225

摘要： When a cuprate oxide LnBa.sub.2 Cu.sub.3 O.sub.7-x (Ln=Y, Pr or Sm; 0.30.ltoreq.x.ltoreq.1) single crystal is heated for growing a film epitaxially on the crystal or for smoothing a damaged surface of the single crystal, many large protrusions occur on the surface of the oxide single crystal substrate or the film. The smooth surface of the oxides becomes rugged by the protrusions. According to the present invention, however, the oxide substrate or the oxide superconductor film can be heated in an atmosphere including oxygen of a partial pressure between 50 mTorr and 200 mTorr to prevent the protrusions from originating on the surface of the heated oxides.

摘要翻译： 当加热铜盐氧化物LnBa2Cu3O7-x（Ln = Y，Pr或Sm; 0.30

公开(公告)号：US5650376A

公开(公告)日：1997-07-22

申请号：US554585

申请日：1995-11-06

申请人： Massoud Badaye ,  Tadataka Morishita ,  Youichi Enomoto ,  Shoji Tanaka

发明人： Massoud Badaye ,  Tadataka Morishita ,  Youichi Enomoto ,  Shoji Tanaka

IPC分类号： C01G1/00 ,  C01G3/00 ,  C01G3/02 ,  C23C14/08 ,  C30B23/08 ,  C30B29/22 ,  H01L39/02 ,  H01L39/12 ,  H01L39/24 ,  B32B9/00

CPC分类号： H01L39/126 ,  Y10S428/93 ,  Y10S505/701

摘要： A superconducting film is disclosed which has the following composition:(Nd, Ba).sub.3 Cu.sub.3 O.sub.7-dwhere d is a number greater than 0 but smaller than 0.5. The superconducting film has the same crystal structure as that of YBa.sub.2 Cu.sub.3 O.sub.7 except that part of the Nd sites and/or part of the Ba sites are occupied by Ba and Nd atoms, respectively.

摘要翻译： 公开了具有以下组成的超导膜：（Nd，Ba）3Cu 3 O 7 - 其中d是大于0但小于0.5的数。 超导薄膜具有与YBa2Cu3O7相同的晶体结构，不同之处在于部分Nd位置和/或部分Ba位置被Ba和Nd原子所占据。

公开(公告)号：US06372368B1

公开(公告)日：2002-04-16

申请号：US09110173

申请日：1998-07-06

申请人： Gustavo Adolfo Alvarez ,  Youichi Enomoto

发明人： Gustavo Adolfo Alvarez ,  Youichi Enomoto

IPC分类号： H01B1200

CPC分类号： H01L39/225 ,  Y10S505/702

摘要： An oxide superconducting element is formed on a substrate 10 by a layered structure 30 formed of oxide superconducting thin-film and a non-superconducting thin-film layers. The element is a superconducting regular current interval voltage step element. The current-voltage characteristic curve in a magnetic field has a voltage step being generated at regular bias current intervals. The layered structure 30 is formed by depositing alternately M′Ba2Cu3O7 (M′ is one or a combination of more than two elements of Nd, Sm and Eu) and M″Ba2Cu3O7 thin-films (M″ is either Pr or Sc, or a combination of the two elements).

摘要翻译： 通过由氧化物超导薄膜和非超导薄膜层形成的层状结构30在衬底10上形成氧化物超导元件。 元件是超导常规电流间隔电压阶跃元件。 磁场中的电流 - 电压特性曲线具有以规定的偏置电流间隔产生的电压阶跃。 层叠结构30通过交替地沉积M'Ba2Cu3O7（M'是Nd，Sm和Eu的一种或多于两种元素的组合）和M'Ba2Cu3O7薄膜（M“是Pr或Sc， 或两个元素的组合）。