摘要:
Disclosed is a process for production of a gas hydrate, wherein the process comprises a gas hydrate production step, a cooling step, a depressurizing step and a re-cooling step. In the cooling step, the temperature (T) required for the cooling of the gas hydrate is adjusted to a temperature equal to or higher than a cooling limit temperature (t1+t2) (which is a sum of an equilibrium temperature (t1) of the gas hydrate and a temperature for correction (t2)) and equal to or lower than the freezing point (0° C.).
摘要:
A gas hydrate production apparatus capable of reacting a raw gas with a raw water to thereby form a slurry gas hydrate and capable of removing water from the slurry gas hydrate by means of a gravitational dewatering unit. The gravitational dewatering unit is one including a cylindrical first tower body; a cylindrical dewatering part disposed on top of the first tower body; a water receiving part disposed outside the dewatering part; and a cylindrical second tower body disposed on top of the dewatering part, wherein the cross-sectional area of the second tower body is continuously or intermittently increased upward from the bottom.
摘要:
Provided is a process and an apparatus for producing at low cost gas hydrate pellets having an excellent storability. A gas hydrate generated from a raw-material gas and raw-material water is dewatered and simultaneously molded into pellets with compression-molding means under conditions suitable for generating the gas hydrate while the gas hydrate is generated from the raw-material gas and the raw-material water that exist among particles of the gas hydrate.
摘要:
A gas hydrate production apparatus capable of reacting a raw gas with a raw water to thereby form a slurry gas hydrate and capable of removing water from the slurry gas hydrate by means of a gravitational dewatering unit. This gravitational dewatering unit is one including a cylindrical first tower body; a cylindrical dewatering part disposed on top of the first tower body; a water receiving part disposed outside the dewatering part; and a cylindrical second tower body disposed on top of the dewatering part, wherein the cross-sectional area of the second tower body is continuously or intermittently increased upward from the bottom.
摘要:
One of objects is to provide a semiconductor device with stable electric characteristics, in which an oxide semiconductor is used. The semiconductor device includes a thin film transistor including an oxide semiconductor layer, and a silicon oxide layer over the thin film transistor. The thin film transistor includes a gate electrode layer, a gate insulating layer whose thickness is equal to or larger than 100 nm and equal to or smaller than 350 nm, the oxide semiconductor layer, a source electrode layer and a drain electrode layer. In the thin film transistor, the difference of the threshold voltage value is 1 V or less between before and after performance of a measurement in which the voltage of 30 V or −30 V is applied to the gate electrode layer at a temperature of 85° C. for 12 hours.
摘要:
An information processing system and a method for operating same are provided. The information processing system includes a first information processing apparatus and a second information processing apparatus. The first information processing apparatus is configured to display a first synchronous image in a first window, the first window having an operation right. The second information processing apparatus has a synchronous state or an asynchronous state. The second information processing apparatus is configured to: display a second synchronous image; in response to a first request, switch from the synchronous state to the asynchronous state; and in response to a second request, switch from the asynchronous state to the synchronous state.
摘要:
An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. The impurity concentration in the oxide semiconductor layer is reduced in the following manner: a silicon oxide layer including many defects typified by dangling bonds is formed in contact with the oxide semiconductor layer, and an impurity such as hydrogen or moisture (a hydrogen atom or a compound including a hydrogen atom such as H2O) included in the oxide semiconductor layer is diffused into the silicon oxide layer. Further, a mixed region is provided between the oxide semiconductor layer and the silicon oxide layer. The mixed region includes oxygen, silicon, and at least one kind of metal element that is included in the oxide semiconductor.
摘要:
An electronic device includes a semiconductor device, wherein the semiconductor device includes: a word line driving unit for driving a plurality of word lines; a first cell array arranged at one side of the word line driving unit; a second cell array arranged at the other side of the word line driving unit; a bias voltage generation unit, arranged between the first cell array and the second cell array, for generating a bias voltage based on currents flowing through the first reference resistance element included in the first cell array and the second reference resistance element included in the second cell array; a first read control unit; and a second read control unit.
摘要:
According to one embodiment, a resistance change memory includes a memory cell, a sense amplifier and a global bit line. The memory cell is disposed at a location where a local bit line and a word line intersect each other. The memory cell is connected to both the local bit line and the word line. The sense amplifier reads data stored on the memory cell by supplying a read current to the memory cell. The global bit line is connected between the local bit line and the sense amplifier. The global bit line feeds the read current supplied by the sense amplifier to the local bit line. The sense amplifier charges the global bit line, before the local bit line and the global bit line are connected to each other.
摘要:
An information processing apparatus, an information processing system, and a method of processing information are provided. In one embodiment, the information processing apparatus includes a processor, and a memory device storing instructions. When executed by the processor, the instructions cause the processor to receive, from a first information processing apparatus, area specifying information and location information, the area specifying information specifying a display area in an image, the display area including a plurality of partial images, the location information indicating at least one location of the plurality of partial images. The instructions further cause the processor to transmit, to a second information processing apparatus, the area specifying information and the location information.