公开(公告)号：US20130115110A1

公开(公告)日：2013-05-09

申请号：US13606689

申请日：2012-09-07

Applicant: Merritt Funk ,  Lee Chen

Inventor： Merritt Funk ,  Lee Chen

IPC: F04B49/06 ,  H01L21/203 ,  H01L21/306

CPC classification number: F04B49/06 ,  C23C16/4412 ,  F04D19/042 ,  F04D27/0246 ,  H01L21/67017 ,  H01L21/67253

Abstract: An apparatus and method for controlling pumping characteristics within a semiconductor processing chamber are provided. The apparatus includes levitation of a hollow shaft turbo pump or pump elements, and is configured to control pumping by including adjustments for orientation, position, geometries, and other aspects of the turbo pump. The method includes adjusting design and operational parameters, to control pumping characteristics within the processing chamber.

Abstract translation: 提供一种用于控制半导体处理室内的泵浦特性的装置和方法。 该装置包括悬挂空心轴涡轮泵或泵元件，并且构造成通过包括对涡轮泵的取向，位置，几何形状和其它方面的调整来控制泵送。 该方法包括调整设计和操作参数，以控制处理室内的泵送特性。

公开(公告)号：US20120248311A1

公开(公告)日：2012-10-04

申请号：US13433088

申请日：2012-03-28

Applicant: Merritt Funk ,  Lee Chen ,  Barton Lane ,  Jianping Zhao ,  Radha Sundararajan

Inventor： Merritt Funk ,  Lee Chen ,  Barton Lane ,  Jianping Zhao ,  Radha Sundararajan

IPC: G01T1/16 ,  B23K31/02 ,  H01S4/00

CPC classification number: H01J37/32935 ,  H01J49/488 ,  H05H1/0081 ,  Y10T29/49002

Abstract: A process by which an ion energy analyzer is manufactured includes processing a first substrate to form an entrance grid having a first channel and a first plurality of openings extending therethrough. A second substrate is processed to form a selection grid having a second channel therein and a second plurality of openings extending therethrough. A third substrate is processed to form an ion collector having a third channel therein. The entrance grid is operably coupled to, and electrically isolated from, the selection grid, which is, in turn, operably coupled to, and electrically isolated from, the ion collector.

Abstract translation: 制造离子能量分析器的过程包括处理第一基底以形成具有第一通道和延伸穿过其中的第一多个开口的入口格栅。 处理第二衬底以形成其中具有第二通道的选择栅格和延伸穿过其中的第二多个开口。 处理第三衬底以形成其中具有第三通道的离子收集器。 入口栅格可操作地耦合到选择栅格并与之电隔离，所述选择栅格又可操作地耦合到离子收集器并与电离隔离。

公开(公告)号：US08276540B2

公开(公告)日：2012-10-02

申请号：US13343877

申请日：2012-01-05

Applicant: Lee Chen ,  Merritt Funk

Inventor： Lee Chen ,  Merritt Funk

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC classification number: H01L21/67069 ,  H01J37/32192 ,  H01J37/3244

Abstract: A method and system for introducing a process fluid through a chamber component in a processing system is described. The chamber component comprises a chamber element having a first surface on a supply side of the chamber element and a second surface on a process side of the chamber element, wherein the process side is opposite the supply side. Furthermore, the chamber component comprises a conduit extending through the chamber element from the supply side to the process side, wherein the conduit comprises an inlet configured to receive a process fluid and an outlet configured to distribute the process fluid.

Abstract translation: 描述了一种通过处理系统中的腔室部件引入过程流体的方法和系统。 腔室部件包括腔室元件，腔室元件具有在腔室元件的供应侧上的第一表面和腔室元件的过程侧上的第二表面，其中处理侧与供给侧相对。 此外，腔室部件包括从供应侧延伸穿过腔室元件到管道侧的管道，其中管道包括被配置为接收过程流体的入口和被配置为分配过程流体的出口。

公开(公告)号：US08175736B2

公开(公告)日：2012-05-08

申请号：US12964531

申请日：2010-12-09

Applicant: Masayuki Tomoyasu ,  Merritt Funk ,  Kevin A. Pinto ,  Masaya Odagiri ,  Lemuel Chen ,  Asao Yamashita ,  Akira Iwami ,  Hiroyuki Takahashi

Inventor： Masayuki Tomoyasu ,  Merritt Funk ,  Kevin A. Pinto ,  Masaya Odagiri ,  Lemuel Chen ,  Asao Yamashita ,  Akira Iwami ,  Hiroyuki Takahashi

IPC: G06F19/00 ,  H01L21/302

CPC classification number: H01L21/67253 ,  C23C16/4405 ,  C25D11/02 ,  H01L21/0337 ,  H01L21/31116 ,  H01L21/67069 ,  H01L21/67155 ,  H01L21/67207 ,  H01L21/67248 ,  H01L22/20

Abstract: A processing system and method for chemical oxide removal (COR) is presented, wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second treatment chambers are coupled to one another. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The second treatment chamber comprises a heat treatment chamber that provides a temperature controlled chamber, thermally insulated from the chemical treatment chamber. The heat treatment chamber provides a substrate holder for controlling the temperature of the substrate to thermally process the chemically treated surfaces on the substrate.

Abstract translation: 提出了一种用于化学氧化物去除（COR）的处理系统和方法，其中处理系统包括第一处理室和第二处理室，其中第一和第二处理室彼此耦合。 第一处理室包括提供温度控制室的化学处理室和用于支撑用于化学处理的基板的独立温度控制的基板保持器。 在包括表面温度和气体压力的受控条件下，将基底暴露于气态化学物质，例如HF / NH 3。 第二处理室包括热处理室，其提供与化学处理室热绝缘的温度控制室。 热处理室提供用于控制基板的温度以热处理基板上化学处理的表面的基板保持器。

公开(公告)号：US20110177694A1

公开(公告)日：2011-07-21

申请号：US12688721

申请日：2010-01-15

Applicant: Lee Chen ,  Merritt Funk

Inventor： Lee Chen ,  Merritt Funk

IPC: H01L21/467

CPC classification number: H01L21/32139 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/32422 ,  H01L21/0273 ,  H01L21/0337 ,  H01L21/28123

Abstract: The invention can provide apparatus and methods of processing a substrate in real-time using a switchable quasi-neutral beam system to improve the etch resistance of photoresist layer. In addition, the improved photoresist layer can be used in an etch procedure to more accurately control gate and/or spacer critical dimensions (CDs), to control gate and/or spacer CD uniformity, and to eliminate line edge roughness (LER) and line width roughness (LWR).

Abstract translation: 本发明可以提供使用可切换的准中性束系统实时地处理衬底以提高光致抗蚀剂层的耐蚀刻性的装置和方法。 此外，改进的光致抗蚀剂层可以用于蚀刻过程中以更准确地控制栅极和/或间隔物临界尺寸（CD），以控制栅极和/或间隔区CD均匀性，并且消除线边缘粗糙度（LER）和线 宽度粗糙度（LWR）。

公开(公告)号：US20110174606A1

公开(公告)日：2011-07-21

申请号：US12688755

申请日：2010-01-15

Applicant: Merritt Funk ,  Lee Chen ,  Radha Sundararajan

Inventor： Merritt Funk ,  Lee Chen ,  Radha Sundararajan

IPC: B01J19/08

CPC classification number: H01J37/3244 ,  H01J37/32009 ,  H01J37/3233 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32449 ,  H01J37/32458 ,  H01J37/32532 ,  H01J2237/338

Abstract: The invention can provide apparatus and methods of processing a substrate in real-time using a Quasi-Neutral Beam (Q-NB) curing system to improve the etch resistance of photoresist layer. In addition, the improved photoresist layer can be used to more accurately control gate and/or spacer critical dimensions (CDs), to control gate and/or spacer CD uniformity, and to eliminate line edge roughness (LER) and line width roughness (LWR).

Abstract translation: 本发明可以提供使用准中性束（Q-NB）固化系统实时处理衬底以提高光致抗蚀剂层的耐蚀刻性的设备和方法。 此外，改进的光致抗蚀剂层可用于更精确地控制栅极和/或间隔物临界尺寸（CD），以控制栅极和/或间隔区CD均匀性，并且消除线边缘粗糙度（LER）和线宽粗糙度（LWR ）。

公开(公告)号：US20110039355A1

公开(公告)日：2011-02-17

申请号：US12853771

申请日：2010-08-10

Applicant: Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Toshihisa Nozawa

Inventor： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Toshihisa Nozawa

IPC: H01L21/66

CPC classification number: H01J37/3244 ,  H01J37/32192 ,  H01L21/31116 ,  H01L21/32137

Abstract: The invention can provide apparatus and methods of processing a substrate using plasma generation by gravity-induced gas-diffusion separation techniques. By adding or using gases including inert and process gases with different gravities (i.e., ratio between the molecular weight of a gaseous constituent and a reference molecular weight), a two-zone or multiple-zone plasma can be formed, in which one kind of gas can be highly constrained near a plasma generation region and another kind of gas can be largely separated from the aforementioned gas due to differential gravity induced diffusion and is constrained more closer to a wafer process region than the aforementioned gas.

Abstract translation: 本发明可以提供使用通过重力引起的气体扩散分离技术的等离子体生成来处理衬底的装置和方法。 通过添加或使用气体，包括不同重量的惰性气体和工艺气体（即气态成分的分子量与参考分子量之间的比例），可以形成两区或多区等离子体，其中一种 气体可以在等离子体产生区域附近被高度约束，并且由于差分重力感应扩散，另一种气体可以与上述气体大大分离，并且比上述气体更受限于更接近于晶片工艺区域。

公开(公告)号：US20090289179A1

公开(公告)日：2009-11-26

申请号：US12126456

申请日：2008-05-23

Applicant: Lee Chen ,  Merritt Funk

Inventor： Lee Chen ,  Merritt Funk

IPC: H05H3/02

CPC classification number: H05H3/02 ,  H01J37/32357 ,  H01J37/32422

Abstract: Method and system for producing a neutral beam source is described. The neutral beam source comprises a plasma generation system for forming a first plasma in a first plasma region, a plasma heating system for heating electrons from the first plasma region in a second plasma region to form a second plasma, and a neutralizer grid for neutralizing ion species from the second plasma in the second plasma region. Furthermore, the neutral beam source comprises an electron acceleration member configured to accelerate the electrons from the first plasma region into the second plasma region. Further yet, the neutral beam source comprises a pumping system that enables use of the neutral beam source for semiconductor processing applications, such as etching processes.

Abstract translation: 描述了用于生产中性束源的方法和系统。 中性束源包括用于在第一等离子体区域中形成第一等离子体的等离子体产生系统，用于在第二等离子体区域中从第一等离子体区域加热电子以形成第二等离子体的等离子体加热系统，以及用于中和离子的中和器栅格 来自第二等离子体区域中的第二等离子体的物质。 此外，中性束源包括被配置为将电子从第一等离子体区域加速到第二等离子体区域中的电子加速构件。 此外，中性束源包括泵送系统，其能够使用中性束源用于诸如蚀刻工艺的半导体处理应用。

公开(公告)号：US07502709B2

公开(公告)日：2009-03-10

申请号：US11390412

申请日：2006-03-28

Applicant: Merritt Funk ,  Radha Sundararajan ,  Daniel Joseph Prager ,  Wesley Natzle

Inventor： Merritt Funk ,  Radha Sundararajan ,  Daniel Joseph Prager ,  Wesley Natzle

IPC: G06F3/00

CPC classification number: H01L22/20 ,  H01L22/12

Abstract: A method of monitoring a dual damascene procedure that includes calculating a pre-processing confidence map for a damascene process, the pre-processing confidence map including confidence data for a first set of dies on the wafer. An expanded pre-processing measurement recipe is established for the damascene process when one or more values in the pre-processing confidence map are not within confidence limits established for the damascene process. A reduced pre-processing measurement recipe for the first damascene process is established when one or more values in the pre-processing confidence map are within confidence limits established for the damascene process.

Abstract translation: 一种监测双镶嵌程序的方法，包括计算镶嵌过程的预处理置信度图，所述预处理置信图包括晶片上的第一组模具的置信度数据。 当预处理置信图中的一个或多个值不在为大马士革过程建立的置信限度内时，为镶嵌过程建立扩展的预处理测量配方。 当预处理置信图中的一个或多个值在为大马士革过程建立的置信限度内时，建立了用于第一镶嵌工艺的减少的预处理测量配方。

公开(公告)号：US07479463B2

公开(公告)日：2009-01-20

申请号：US11684154

申请日：2007-03-09

Applicant: John Kulp ,  Michael Carcasi ,  Merritt Funk

Inventor： John Kulp ,  Michael Carcasi ,  Merritt Funk

IPC: H01L21/312

CPC classification number: H01L21/6715 ,  G03F7/3021 ,  H01L21/67109

Abstract: Embodiments of an apparatus and methods for heating a substrate and a sacrificial layer are generally described herein. Other embodiments may be described and claimed.

Abstract translation: 本文通常描述用于加热衬底和牺牲层的装置和方法的实施例。 可以描述和要求保护其他实施例。