Surface modifying layers for organic thin film transistors
    11.
    发明授权
    Surface modifying layers for organic thin film transistors 有权
    有机薄膜晶体管的表面改性层

    公开(公告)号:US06433359B1

    公开(公告)日:2002-08-13

    申请号:US09947845

    申请日:2001-09-06

    IPC分类号: H01L3524

    摘要: Provided is an organic thin film transistor comprising a self-assembled monolayer interposed between a gate dielectric and an organic semiconductor layer. The monolayer is a product of a reaction between the gate dielectric and a precursor to the self-assembled monolayer. The monolayer precursor composition has the formula: X—Y—Zn, wherein X is H or CH3; Y is a linear or branched C5-C50 aliphatic or cyclic aliphatic connecting group, or C8-C50 group comprising an aromatic group and a C3-C44 aliphatic or cyclic aliphatic connecting group; Z is selected from from —PO3H2, —OPO3H2, benzotriazolyl (—C6H4N3), carbonyloxybenzotriazole (—OC(═O)C6H4N3), oxybenzotriazole (—O—C6H4N3), aminobenzotriazole (—NH—C6H4N3), —CONHOH, —COOH, —OH, —SH, —COSH, —COSeH, —C5H4N, —SeH, —SO3H, —NC, —SiCl(CH3)2, —SiCl2CH3, amino, and phosphinyl; and n is 1, 2, or 3 provided that n=1 when Z is —SiCl(CH3)2 or —SiCl2CH3. Methods of making a thin film transistor and an integrated circuit comprising thin film transistors are also provided.

    摘要翻译: 提供了一种有机薄膜晶体管,其包括介于栅极电介质和有机半导体层之间的自组装单层。 单层是栅极电介质和自组装单层的前体之间的反应的产物。 单层前体组合物具有下式:X-Y-Zn,其中X是H或CH 3; Y是直链或支链C 5 -C 50脂族或环状脂族连接基团或包含芳族基团和C 3 -C 44脂族或环状脂族连接基团的C 8 -C 50基团; Z选自-PO 3 H 2,-OPO 3 H 2,苯并三唑基(-C 6 H 4 N 3),羰氧基苯并三唑(-OC(= O)C 6 H 4 N 3),氧苯并三唑(-O-C 6 H 4 N 3),氨基苯并三唑(-NH-C 6 H 4 N 3),-CONHOH,-COOH, -OH,-SH,-COSH,-COSeH,-C5H4N,-SeH,-SO3H,-NC,-SiCl(CH3)2,-SiCl2CH3,氨基和氧膦基; 并且n为1,2或3,条件是当Z为-SiCl(CH 3)2或-SiCl 2 CH 3时n = 1。还提供了制造薄膜晶体管的方法和包括薄膜晶体管的集成电路。

    LIGHT GENERATING DEVICE HAVING DOUBLE-SIDED WAVELENGTH CONVERTER
    12.
    发明申请
    LIGHT GENERATING DEVICE HAVING DOUBLE-SIDED WAVELENGTH CONVERTER 失效
    具有双边波长转换器的发光装置

    公开(公告)号:US20110260601A1

    公开(公告)日:2011-10-27

    申请号:US13141638

    申请日:2009-12-10

    IPC分类号: H01J1/62

    CPC分类号: H01L33/08

    摘要: A light emitting device includes a wavelength converter attached to a light emitting diode (LED). The wavelength converter may have etched patterns on both the first and second sides. In some embodiments the first and second sides of the converter each include a respective structure having a different width at its top than at its base. The wavelength converter may include a first photoluminescent element substantially overlying a first region of the LED without overlying a second region of the LED, while a second photoluminescent element substantially overlies the second region without overlying the first region. In some embodiments a passivation layer is disposed over the etched pattern of the first side. A window layer may be disposed between the first and second photoluminescent elements, with non-epitaxial material disposed on first and second sides of one region of the window layer.

    摘要翻译: 发光器件包括附接到发光二极管(LED)的波长转换器。 波长转换器可以在第一侧和第二侧都具有蚀刻图案。 在一些实施例中,转换器的第一和第二侧各自包括在其顶部具有与其底部不同的宽度的相应结构。 波长转换器可以包括基本上覆盖LED的第一区域而不覆盖LED的第二区域的第一光致发光元件,而第二光致发光元件基本上覆盖第二区域而不覆盖第一区域。 在一些实施例中,钝化层设置在第一侧的蚀刻图案之上。 窗口层可以设置在第一和第二光致发光元件之间,其中非外延材料设置在窗口层的一个区域的第一和第二侧上。

    METHOD FOR MAKING ELECTRONIC DEVICES HAVING A DIELECTRIC LAYER SURFACE TREATMENT
    13.
    发明申请
    METHOD FOR MAKING ELECTRONIC DEVICES HAVING A DIELECTRIC LAYER SURFACE TREATMENT 审中-公开
    用于制造具有介电层表面处理的电子器件的方法

    公开(公告)号:US20080145701A1

    公开(公告)日:2008-06-19

    申请号:US12033143

    申请日:2008-02-19

    IPC分类号: B32B9/00

    摘要: A method of making an electronic device by (a) depositing a substantially nonfluorinated polymeric layer onto a dielectric layer using a plasma-based deposition technique selected from the group consisting of (i) plasma polymerizing a precursor comprising monomers, and (ii) sputtering from a target comprising one or more polymers of interpolymerized units of monomers, the monomers being selected from the group consisting of aromatic monomers, substantially hydrocarbon monomers, and combinations thereof; and (b) depositing an organic semiconductor layer adjacent to said polymeric layer.

    摘要翻译: 一种通过(a)使用等离子体沉积技术将基本上非氟化聚合物层沉积到电介质层上的方法,所述等离子体沉积技术选自(i)等离子体聚合包含单体的前体,和(ii)从 包含一种或多种共聚单体单体的聚合物的靶,所述单体选自芳族单体,基本上为烃单体及其组合; 和(b)沉积与所述聚合物层相邻的有机半导体层。

    In-line deposition processes for circuit fabrication
    14.
    发明授权
    In-line deposition processes for circuit fabrication 失效
    电路制造的在线沉积工艺

    公开(公告)号:US06821348B2

    公开(公告)日:2004-11-23

    申请号:US10076005

    申请日:2002-02-14

    IPC分类号: C23C1600

    摘要: In one embodiment, the invention is directed to aperture mask deposition techniques using aperture mask patterns formed in one or more elongated webs of flexible film. The techniques involve sequentially depositing material through mask patterns formed in the film to define layers, or portions of layers, of the circuit. A deposition substrate can also be formed from an elongated web, and the deposition substrate web can be fed through a series of deposition stations. Each deposition station may have an elongated web formed with aperture mask patterns. The elongated web of mask patterns feeds in a direction perpendicular to the deposition substrate web. In this manner, the circuit creation process can be performed in-line. Moreover, the process can be automated to reduce human error and increase throughput.

    摘要翻译: 在一个实施例中,本发明涉及使用在一个或多个细长的柔性膜网中形成的孔掩模图案的孔掩模沉积技术。 这些技术涉及通过在膜中形成的掩模图案顺序沉积材料以限定电路的层或层的一部分。 沉积衬底也可以由细长的腹板形成,并且沉积衬底腹板可以通过一系列沉积站进给。 每个沉积站可以具有形成有孔掩模图案的细长腹板。 细长的掩模图形网沿垂直于沉积衬底腹板的方向进给。 以这种方式,可以在线执行电路创建处理。 此外,该过程可以自动化以减少人为错误并增加吞吐量。

    LIGHT EMITTING DIODE WITH BONDED SEMICONDUCTOR WAVELENGTH CONVERTER
    16.
    发明申请
    LIGHT EMITTING DIODE WITH BONDED SEMICONDUCTOR WAVELENGTH CONVERTER 审中-公开
    具有粘结半导体波长转换器的发光二极管

    公开(公告)号:US20110186877A1

    公开(公告)日:2011-08-04

    申请号:US12995655

    申请日:2009-04-23

    摘要: An electroluminescent device emits light at a pump wavelength. A first photoluminescent element covers first and second regions of the electroluminescent device and converts at least some of the pump light from the first region of the electroluminescent device to light at a first wavelength. A second photoluminescent element covers the second region of the electroluminescent device without covering the first region of the electroluminescent device and converts at least some of the light of the pump wavelength to light at a second wavelength different from the first wavelength. In some embodiments the first and second photoluminescent elements convert substantially all of the pump light incident from the first and second regions of the electroluminescent device respectively. An etch-stop layer may separate the first and second photoluminescent elements.

    摘要翻译: 电致发光器件以泵浦波长发光。 第一光致发光元件覆盖电致发光器件的第一和第二区域,并将来自电致发光器件的第一区域的至少一些泵浦光转换成第一波长的光。 第二光致发光元件覆盖电致发光器件的第二区域而不覆盖电致发光器件的第一区域,并将泵波长的至少一些光转换成不同于第一波长的第二波长的光。 在一些实施例中,第一和第二光致发光元件基本上分别从电致发光器件的第一和第二区域入射的所有泵浦光转换。 蚀刻停止层可以分离第一和第二光致发光元件。

    DOWN-CONVERTED LIGHT SOURCE WITH UNIFORM WAVELENGTH EMISSION
    17.
    发明申请
    DOWN-CONVERTED LIGHT SOURCE WITH UNIFORM WAVELENGTH EMISSION 有权
    具有均匀波长发射的下变换光源

    公开(公告)号:US20100295057A1

    公开(公告)日:2010-11-25

    申请号:US12810052

    申请日:2008-12-09

    IPC分类号: H01L33/30 H01L33/44

    摘要: An arrangement of light sources is attached to a semiconductor wavelength converter. Each light source emits light at a respective peak wavelength, and the arrangement of light sources is characterized by a first range of peak wavelengths. The semiconductor wavelength converter is characterized by a second range of peak wavelengths when pumped by the arrangement of light sources. The second range of peak wavelengths is narrower than the first range of peak wavelengths. The semiconductor wavelength converter is characterized by an absorption edge having a wavelength longer than the longest peak wavelength of the light sources. The wavelength converter may also be used for reducing the wavelength variation in the output from an extended light source.

    摘要翻译: 光源的布置附着到半导体波长转换器。 每个光源以相应的峰值波长发光,并且光源的布置的特征在于峰值波长的第一范围。 半导体波长转换器的特征在于通过光源的排列泵浦时的第二峰值波长范围。 峰值波长的第二范围比峰值波长的第一范围窄。 半导体波长转换器的特征在于具有比光源的最长峰值波长长的波长的吸收边。 波长转换器还可以用于减小来自扩展光源的输出中的波长变化。

    LIGHT EMITTING DIODE WITH BONDED SEMICONDUCTOR WAVELENGTH CONVERTER
    18.
    发明申请
    LIGHT EMITTING DIODE WITH BONDED SEMICONDUCTOR WAVELENGTH CONVERTER 审中-公开
    具有粘结半导体波长转换器的发光二极管

    公开(公告)号:US20100283074A1

    公开(公告)日:2010-11-11

    申请号:US12681878

    申请日:2008-09-09

    IPC分类号: H01L33/50 H01L33/00

    摘要: A light emitting diode (LED) has various LED layers provided on a substrate. A multilayer semiconductor wavelength converter, capable of converting the wavelength of light generated in the LED to light at a longer wavelength, is attached to the upper surface of the LED by a bonding layer. One or more textured surfaces within the LED are used to enhance the efficiency at which light is transported from the LED to the wavelength converter. In some embodiments, one or more surfaces of the wavelength converter is provided with a textured surface to enhance the extraction efficiency of the long wavelength light generated within the converter.

    摘要翻译: 发光二极管(LED)具有设置在基板上的各种LED层。 通过接合层将能够将LED中产生的光的波长转换为较长波长的光的多层半导体波长转换器附接到LED的上表面。 LED中的一个或多个织构表面用于提高光从LED传输到波长转换器的效率。 在一些实施例中,波长转换器的一个或多个表面设置有纹理表面以增强在转换器内产生的长波长光的提取效率。

    Method for making electronic devices having a dielectric layer surface treatment
    20.
    发明授权
    Method for making electronic devices having a dielectric layer surface treatment 失效
    制造具有电介质层表面处理的电子器件的方法

    公开(公告)号:US07399668B2

    公开(公告)日:2008-07-15

    申请号:US10954413

    申请日:2004-09-30

    IPC分类号: H01L21/8238

    摘要: A method of making an electronic device by (a) depositing a substantially nonfluorinated polymeric layer onto a dielectric layer using a plasma-based deposition technique selected from the group consisting of (i) plasma polymerizing a precursor comprising monomers, and (ii) sputtering from a target comprising one or more polymers of interpolymerized units of monomers, the monomers being selected from the group consisting of aromatic monomers, substantially hydrocarbon monomers, and combinations thereof; and (b) depositing an organic semiconductor layer adjacent to said polymeric layer.

    摘要翻译: 一种通过(a)使用等离子体沉积技术将基本上非氟化聚合物层沉积到电介质层上的方法,所述等离子体沉积技术选自(i)等离子体聚合包含单体的前体,和(ii)从 包含一种或多种共聚单体单体的聚合物的靶,所述单体选自芳族单体,基本上为烃单体及其组合; 和(b)沉积与所述聚合物层相邻的有机半导体层。