公开(公告)号：US10283462B1

公开(公告)日：2019-05-07

申请号：US15811579

申请日：2017-11-13

Applicant: Micron Technology, Inc.

Inventor： James E. Davis ,  Kevin G. Duesman ,  Jeffrey P. Wright ,  Warren L. Boyer

IPC: H01L23/60 ,  H01L23/00 ,  H01L25/04 ,  H01L23/538

Abstract: A semiconductor device assembly includes a substrate and a die coupled to the substrate. The die includes a first contact pad electrically coupled to a first circuit on the die including at least one active circuit element, a second contact pad electrically coupled to a second circuit on the die including only passive circuit elements, and a plated pad electrically coupling at least a part of the first contact pad to at least a part of the second contact pad. The substrate includes a substrate contact electrically coupled to the plated pad on the die.

公开(公告)号：US11848323B2

公开(公告)日：2023-12-19

申请号：US17178771

申请日：2021-02-18

Applicant: Micron Technology, Inc.

Inventor： James E. Davis ,  John B. Pusey ,  Zhiping Yin ,  Kevin G. Duesman

IPC: H01L27/02 ,  H01L25/065 ,  H01L25/00 ,  H01L23/00 ,  H01L23/60 ,  H01L49/02 ,  H10B69/00

CPC classification number: H01L27/0292 ,  H01L23/60 ,  H01L24/06 ,  H01L24/13 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0657 ,  H01L25/50 ,  H01L27/0288 ,  H01L24/05 ,  H01L28/40 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05567 ,  H01L2224/05569 ,  H01L2224/0603 ,  H01L2224/131 ,  H01L2224/13028 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/4845 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48453 ,  H01L2224/48464 ,  H01L2224/49109 ,  H01L2224/49112 ,  H01L2225/0651 ,  H01L2225/06506 ,  H01L2225/06527 ,  H01L2225/06562 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/1434 ,  H10B69/00 ,  H01L2224/131 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/00014 ,  H01L2224/45099

Abstract: A semiconductor device assembly includes a substrate and a die coupled to the substrate. The die includes a first contact pad electrically coupled to a first circuit on the die including at least one active circuit element, and a second contact pad electrically coupled to a second circuit on the die including only passive circuit elements. The substrate includes a substrate contact electrically coupled to both the first and second contact pads. The semiconductor device assembly can further include a second die including a third contact pad electrically coupled to a third circuit on the second die including at least a second active circuit element, and a fourth contact pad electrically coupled to a fourth circuit on the second die including only passive circuit elements. The substrate contact can be electrically coupled to the third contact pad and electrically disconnected from the fourth contact pad.

公开(公告)号：US20210043525A1

公开(公告)日：2021-02-11

申请号：US16535882

申请日：2019-08-08

Applicant: Micron Technology, Inc.

Inventor： Chiara Cerafogli ,  Kenneth William Marr ,  Brian J. Soderling ,  Michael P. Violette ,  Joshua Daniel Tomayer ,  James E. Davis

IPC: H01L21/66 ,  H01L27/11556 ,  H01L23/00 ,  H01L23/528 ,  H01L27/11526 ,  H01L27/11573 ,  H03K3/03 ,  H01L27/11582 ,  G11C16/26 ,  G11C16/08 ,  G11C16/04 ,  G11C29/14

Abstract: Some embodiments include apparatuses and methods of fabricating the apparatuses. One of the apparatuses includes a substrate of a semiconductor die; a memory cell portion located over a first portion of the substrate; a conductive pad portion located over a second portion of the substrate and outside the memory cell portion; and a sensor circuit including a portion located over the second portion of the substrate and under the conductive pad portion. The conductive pad portion includes conductive pads. Each of the conductive pads is part of a respective electrical path coupled to a conductive contact of a base outside the substrate.

公开(公告)号：US20200152620A1

公开(公告)日：2020-05-14

申请号：US16743451

申请日：2020-01-15

Applicant: Micron Technology, Inc.

Inventor： James E. Davis ,  John B. Pusey ,  Zhiping Yin ,  Kevin G. Duesman

IPC: H01L27/02 ,  H01L23/60 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065

Abstract: A semiconductor device assembly includes a substrate and a die coupled to the substrate. The die includes a first contact pad electrically coupled to a first circuit on the die including at least one active circuit element, and a second contact pad electrically coupled to a second circuit on the die including only passive circuit elements. The substrate includes a substrate contact electrically coupled to both the first and second contact pads. The semiconductor device assembly can further include a second die including a third contact pad electrically coupled to a third circuit on the second die including at least a second active circuit element, and a fourth contact pad electrically coupled to a fourth circuit on the second die including only passive circuit elements. The substrate contact can be electrically coupled to the third contact pad and electrically disconnected from the fourth contact pad.

公开(公告)号：US20190148359A1

公开(公告)日：2019-05-16

申请号：US16201811

申请日：2018-11-27

Applicant: Micron Technology, Inc.

Inventor： James E. Davis ,  John B. Pusey ,  Zhiping Yin ,  Kevin G. Duesman

IPC: H01L27/02 ,  H01L25/00 ,  H01L25/065 ,  H01L23/00 ,  H01L27/115 ,  H01L49/02

Abstract: A semiconductor device assembly includes a substrate and a die coupled to the substrate. The die includes a first contact pad electrically coupled to a first circuit on the die including at least one active circuit element, and a second contact pad electrically coupled to a second circuit on the die including only passive circuit elements. The substrate includes a substrate contact electrically coupled to both the first and second contact pads. The semiconductor device assembly can further include a second die including a third contact pad electrically coupled to a third circuit on the second die including at least a second active circuit element, and a fourth contact pad electrically coupled to a fourth circuit on the second die including only passive circuit elements. The substrate contact can be electrically coupled to the third contact pad and electrically disconnected from the fourth contact pad.

公开(公告)号：US20190148314A1

公开(公告)日：2019-05-16

申请号：US16138003

申请日：2018-09-21

Applicant: Micron Technology, Inc.

Inventor： James E. Davis ,  Kevin G. Duesman ,  Jeffrey P. Wright ,  Warren L. Boyer

IPC: H01L23/60 ,  H01L23/538 ,  H01L23/00 ,  H01L25/04

CPC classification number: H01L23/60 ,  G11C5/02 ,  G11C5/025 ,  H01L23/538 ,  H01L24/02 ,  H01L24/10 ,  H01L24/95 ,  H01L25/043 ,  H01L25/0657 ,  H01L2224/05554 ,  H01L2224/48091 ,  H01L2224/48145 ,  H01L2224/48147 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06527 ,  H01L2225/06562 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2224/45099

Abstract: A semiconductor device assembly includes a substrate and a die coupled to the substrate. The die includes a first contact pad electrically coupled to a first circuit on the die including at least one active circuit element, a second contact pad electrically coupled to a second circuit on the die including only passive circuit elements, and a plated pad electrically coupling at least a part of the first contact pad to at least a part of the second contact pad. The substrate includes a substrate contact electrically coupled to the plated pad on the die.

公开(公告)号：US11908812B2

公开(公告)日：2024-02-20

申请号：US17176787

申请日：2021-02-16

Applicant: Micron Technology, Inc.

Inventor： Yui Shimizu ,  James E. Davis

IPC: H01L23/60 ,  H01L25/065 ,  H01L25/00

CPC classification number: H01L23/60 ,  H01L25/0657 ,  H01L25/50 ,  H01L2225/06506 ,  H01L2225/06562

Abstract: A memory device including a substrate including a substrate contact pad. The memory device includes a first memory die including a first power supply contact pad electrically coupled to the substrate contact pad and a first power supply circuit on the first memory die. The first memory die further includes a first electrostatic discharge (ESD) power clamp contact pad electrically coupled to the substrate contact pad and a first ESD power clamp circuit on the first memory die. The memory device further includes a second memory die including a second power supply contact pad electrically coupled to the substrate contact pad and a second power supply circuit on the second memory die and a second ESD power clamp contact pad electrically coupled to a second ESD power clamp circuit on the second memory die, wherein the second ESD power clamp contact pad is electrically disconnected from the substrate contact.

公开(公告)号：US20200144182A1

公开(公告)日：2020-05-07

申请号：US16183057

申请日：2018-11-07

Applicant: Micron Technology, Inc.

Inventor： James E. Davis ,  Kevin G. Duesman

IPC: H01L23/522 ,  H01L23/528 ,  H01L23/532

Abstract: Semiconductor devices having inductive structures, and associated systems and methods, are disclosed herein. In one embodiment, a semiconductor device includes a substrate and at least one circuit component coupled to the substrate. The semiconductor device can further include an inductive structure carried by the substrate and having a stack of alternating first and second layers. In some embodiments, the first layers comprise an oxide material and the second layers each include a coil of conductive material. The coils of conductive material can be electrically coupled (a) together to form an inductor and (b) to the at least one circuit component.

公开(公告)号：US20190273052A1

公开(公告)日：2019-09-05

申请号：US16416210

申请日：2019-05-18

Applicant: Micron Technology, Inc.

Inventor： James E. Davis ,  Kevin G. Duesman ,  Jeffrey P. Wright ,  Warren L. Boyer

IPC: H01L23/60 ,  H01L23/00 ,  H01L23/538 ,  H01L25/04

Abstract: A semiconductor device assembly includes a substrate and a die coupled to the substrate. The die includes a first contact pad electrically coupled to a first circuit on the die including at least one active circuit element, a second contact pad electrically coupled to a second circuit on the die including only passive circuit elements, and a plated pad electrically coupling at least a part of the first contact pad to at least a part of the second contact pad. The substrate includes a substrate contact electrically coupled to the plated pad on the die.

公开(公告)号：US10312232B1

公开(公告)日：2019-06-04

申请号：US16007903

申请日：2018-06-13

Applicant: Micron Technology, Inc.

Inventor： James E. Davis ,  John B. Pusey ,  Zhiping Yin ,  Kevin G. Duesman

IPC: H01L27/02 ,  H01L23/00 ,  H01L25/00 ,  H01L25/065 ,  H01L27/115 ,  H01L49/02

Abstract: A semiconductor device assembly includes a substrate and a die coupled to the substrate. The die includes a first contact pad electrically coupled to a first circuit on the die including at least one active circuit element, and a second contact pad electrically coupled to a second circuit on the die including only passive circuit elements. The substrate includes a substrate contact electrically coupled to both the first and second contact pads. The semiconductor device assembly can further include a second die including a third contact pad electrically coupled to a third circuit on the second die including at least a second active circuit element, and a fourth contact pad electrically coupled to a fourth circuit on the second die including only passive circuit elements. The substrate contact can be electrically coupled to the third contact pad and electrically disconnected from the fourth contact pad.