公开(公告)号：US5399524A

公开(公告)日：1995-03-21

申请号：US133545

申请日：1993-10-07

Applicant: Nikhil R. Taskar ,  Babar A. Khan ,  Donald R. Dorman

Inventor： Nikhil R. Taskar ,  Babar A. Khan ,  Donald R. Dorman

IPC: H01L21/28 ,  H01L21/445 ,  H01L33/00 ,  H01L33/28 ,  H01L33/40 ,  H01L21/44 ,  H01L21/48

CPC classification number: H01L33/40 ,  H01L21/445 ,  H01L33/28

Abstract: A method of providing an improved ohmic contact on an p-type ZnSe or ZnSSe layer provided on a substrate comprising immersing the layer in a Hg bath heated to a temperature in excess of 200.degree. C. for more than two hours.

Abstract translation: 在衬底上提供的p型ZnSe或ZnSSe层上提供改进的欧姆接触的方法，包括将该层浸入加热到超过200℃的Hg浴中超过2小时。

公开(公告)号：US20140008697A1

公开(公告)日：2014-01-09

申请号：US13991835

申请日：2011-12-06

Applicant: Brian R. Harkness ,  Ann W. Norris ,  Shellene K. Thurston ,  Vishal Chhabra ,  Bharati S. Kulkarni ,  Nikhil R. Taskar

Inventor： Brian R. Harkness ,  Ann W. Norris ,  Shellene K. Thurston ,  Vishal Chhabra ,  Bharati S. Kulkarni ,  Nikhil R. Taskar

IPC: H01L33/56

CPC classification number: H01L33/56 ,  C08G77/045 ,  C08G77/12 ,  C08G77/20 ,  C08L83/04 ,  H01L23/296 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A composition includes an organopolysiloxane component (A) comprising at least one of a disiloxane, a trisiloxane, and a tetrasiloxane, and has an average of at least two alkenyl groups per molecule. The composition further includes an organohydrogensiloxane component (B) having an average of at least two silicon-bonded hydrogen atoms per molecule. Components (A) and (B) each independently have at least one of an alkyl group and an aryl group and each independently have a number average molecular weight less than or equal to 1500 (g/mole). The composition yet further includes a catalytic amount of a hydrosilylation catalyst component (C), and titanium dioxide (TiO2) nanoparticles (D). The composition has a molar ratio of alkyl groups to aryl groups ranging from 1:0.25 to 1:3.0. A product of the present invention is the reaction product of the composition, which may be used to make a light emitting diode.

Abstract translation: 组合物包括包含二硅氧烷，三硅氧烷和四硅氧烷中的至少一种的有机聚硅氧烷组分（A），并且每分子平均具有至少两个烯基。 组合物还包括每分子平均具有至少两个硅键合的氢原子的有机氢硅氧烷组分（B）。 组分（A）和（B）各自独立地具有烷基和芳基中的至少一个，并且各自独立地具有小于或等于1500（g / mol）的数均分子量。 该组合物还包括催化量的氢化硅烷化催化剂组分（C）和二氧化钛（TiO 2）纳米颗粒（D）。 该组合物的烷基与芳基的摩尔比范围为1:0.25至1:3.0。 本发明的产品是可用于制造发光二极管的组合物的反应产物。

公开(公告)号：US5786233A

公开(公告)日：1998-07-28

申请号：US603959

申请日：1996-02-20

Applicant: Nikhil R. Taskar ,  Donald R. Dorman ,  Dennis Gallagher

Inventor： Nikhil R. Taskar ,  Donald R. Dorman ,  Dennis Gallagher

IPC: H01L21/205 ,  H01L21/365 ,  H01L21/00

CPC classification number: H01L21/02579 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0254 ,  H01L21/02551

Abstract: Active acceptor concentrations of p-doped II-VI and III-V semiconductor compound layer provided by chemical vapor deposition are increased by photo-assisted annealing.

Abstract translation: 通过光辅助退火，通过化学气相沉积提供的p掺杂的II-VI和III-V半导体化合物层的活性受主浓度增加。

公开(公告)号：US5293074A

公开(公告)日：1994-03-08

申请号：US878657

申请日：1992-05-05

Applicant: Nikhil R. Taskar ,  Babar A. Khan ,  Donald R. Dorman

Inventor： Nikhil R. Taskar ,  Babar A. Khan ,  Donald R. Dorman

IPC: H01L21/28 ,  H01L21/445 ,  H01L33/00 ,  H01L33/28 ,  H01L33/40 ,  H01L23/48 ,  H01L29/46 ,  H01L29/62

CPC classification number: H01L33/40 ,  H01L21/445 ,  H01L33/28

Abstract: A semiconductor structure with a p-type ZnSe layer has an improved ohmic contact consisting of a layer of Hg.sub.x Zn.sub.1-x Te.sub.a Se.sub.b Sc where x=0-1 with x being 0 at the surface of the ZnSe layer and increasing thereafter, a, b and c each =0-1 and a+b+c=1.

Abstract translation: 具有p型ZnSe层的半导体结构具有改善的欧姆接触，其由ZnSe层的表面处的x x = 0-1，x为0的Hg x Zn 1-x Te e S Sc Sc层组成，之后增加a，b和c = 0-1，a + b + c = 1。

公开(公告)号：US5227328A

公开(公告)日：1993-07-13

申请号：US851452

申请日：1992-03-16

Applicant: Babar A. Khan ,  Nikhil R. Taskar

Inventor： Babar A. Khan ,  Nikhil R. Taskar

IPC: H01L21/38

CPC classification number: H01L21/38 ,  Y10S148/064 ,  Y10S438/902

Abstract: Epitaxial layers of II-VI semiconductors in-situ doped with high concentrations of a stable acceptor-type impurity and capped with a diffusion-limiting layer, when subjected to a rapid thermal anneal at a temperature between 700 and 950 degrees C., exhibit a high conversion of the impurities to acceptors, sufficient to render the layers p-type.

Abstract translation: 原位掺杂高浓度稳定受主型杂质并用扩散限制层封端的II-VI半导体的外延层当在700和950摄氏度之间的温度下进行快速热退火时，表现出 杂质转化为受体的高转化率，足以使层p型。

公开(公告)号：US07119372B2

公开(公告)日：2006-10-10

申请号：US10693126

申请日：2003-10-24

Applicant: Edward B. Stokes ,  Mark P. D'Evelyn ,  Stanton E. Weaver ,  Peter M. Sandvik ,  Abasifreke U. Ebong ,  Xian-an Cao ,  Steven F. LeBoeuf ,  Nikhil R. Taskar

Inventor： Edward B. Stokes ,  Mark P. D'Evelyn ,  Stanton E. Weaver ,  Peter M. Sandvik ,  Abasifreke U. Ebong ,  Xian-an Cao ,  Steven F. LeBoeuf ,  Nikhil R. Taskar

IPC: H01L27/15

CPC classification number: H01L33/405 ,  H01L33/387 ,  H01L2933/0083

Abstract: A flip chip light emitting diode die (10, 10′, 10″) includes a light-transmissive substrate (12, 12′, 12″) and semiconductor layers (14, 14′, 14″) that are selectively patterned to define a device mesa (30, 30′, 30″). A reflective electrode (34, 34′, 34″) is disposed on the device mesa (30, 30′, 30″). The reflective electrode (34, 34′, 34″) includes a light-transmissive insulating grid (42, 42′, 60, 80) disposed over the device mesa (30, 30′, 30″), an ohmic material (44, 44′, 44″, 62) disposed at openings of the insulating grid (42, 42′, 60, 80) and making ohmic contact with the device mesa (30, 30′, 30″), and an electrically conductive reflective film (46, 46′, 46″) disposed over the insulating grid (42, 42′, 60, 80) and the ohmic material (44, 44′, 44″, 62). The electrically conductive reflective film (46, 46′, 46″) electrically communicates with the ohmic material (44, 44′, 44″, 62).

Abstract translation: 倒装芯片发光二极管管芯（10,10'，10“）包括透光衬底（12,12'，12”）和半导体层（14,14'，14“），其被选择性地图案化 以限定装置台面（30,30'，30“）。 反射电极（34,34'，34“）设置在器件台面（30,30'，30”）上。 反射电极（34,34'，34“）包括设置在器件台面（30,30'，30”）上方的透光绝缘栅极（42,42'，60,80），欧姆材料 44,44'，44“，62）设置在绝缘栅极（42,42'，60,80）的开口处并与器件台面（30,30'，30”）形成欧姆接触， 设置在绝缘栅极（42,42'，60,80）上的导电反射膜（46,46'，46“）和欧姆材料（44,44'，44”，62）。 导电反射膜（46,46'，46“）与欧姆材料（44,44'，44”，62）电连通。

公开(公告)号：US06885004B2

公开(公告)日：2005-04-26

申请号：US10073702

申请日：2002-02-11

Applicant: Nikhil R. Taskar ,  Rameshwar Nath Shargava

Inventor： Nikhil R. Taskar ,  Rameshwar Nath Shargava

IPC: G01T1/20 ,  G01T1/29 ,  G21K4/00

CPC classification number: G01T1/2921 ,  G01T1/20 ,  G21K4/00 ,  G21K2004/06 ,  G21K2004/12 ,  H01J2231/50036 ,  H01J2231/5016

Abstract: X-ray imaging screens utilizing phosphors disposed in microchannels disposed in a plate. This application relates to the “tiling” of such microchannel plates to form a larger imaging area and to the use of “storage phosphors” in the microchannel plates which enables the phosphors to be read out after exposure and from the side exposed to the X-rays. The storage phosphor screens of the present invention provide significantly increased resolution than the prior art storage phosphor screens.

Abstract translation: 使用设置在板中的微通道中的荧光体的X射线成像屏幕。 本申请涉及这种微通道板的“平铺”，以形成更大的成像区域，并且在微通道板中使用“储存磷光体”，这使得在曝光之后和从暴露于X射线的一侧可以读出荧光体。 射线 本发明的存储荧光屏提供比现有技术的存储荧光屏显着增加的分辨率。

公开(公告)号：US6113691A

公开(公告)日：2000-09-05

申请号：US451341

申请日：1995-05-26

Applicant: Nikhil R. Taskar ,  Donald R. Dorman ,  Dennis Gallagher

Inventor： Nikhil R. Taskar ,  Donald R. Dorman ,  Dennis Gallagher

IPC: C30B29/48 ,  C30B25/02 ,  C30B25/16 ,  H01L21/365 ,  H01L33/00 ,  H01S5/327

CPC classification number: H01L33/0087 ,  C30B25/02 ,  C30B29/48 ,  H01S2304/04 ,  H01S5/327

Abstract: Semiconductor compounds and a method for producing the same are provided wherein a method for growing at least one epitaxial layer of a II-VI semiconductor compound using MOVPE is used, the method including the steps of subjecting a substrate to organometallic and hydride precursor compounds in a MOVPE reactor at ultra low pressure, i.e. a pressure in the range of about 10 to 1 mTorr, whereby the organometallic and hydride precursor compounds react at a substrate surface without substantial reaction in the gas phase. The epitaxial layers and semiconductor compounds are useful in blue laser devices.

Abstract translation: 提供半导体化合物及其制造方法，其中使用使用MOVPE生长II-VI半导体化合物的至少一个外延层的方法，所述方法包括以下步骤：将基底经受有机金属和氢化物前体化合物 MOVPE反应器在超低压下，即在约10至1mTorr范围内的压力，由此有机金属和氢化物前体化合物在基体表面反应而在气相中没有实质的反应。 外延层和半导体化合物可用于蓝色激光器件。

公开(公告)号：US5915164A

公开(公告)日：1999-06-22

申请号：US583148

申请日：1995-12-28

Applicant: Nikhil R. Taskar ,  Piotr M. Mensz ,  Babar A. Khan

Inventor： Nikhil R. Taskar ,  Piotr M. Mensz ,  Babar A. Khan

IPC: H01L29/20 ,  H01L21/285 ,  H01L21/335 ,  H01L29/10 ,  H01L29/51 ,  H01L29/78 ,  H01L29/786 ,  H01L29/80 ,  H01L21/00

CPC classification number: H01L29/518 ,  H01L21/28587 ,  H01L21/28593 ,  H01L29/1079 ,  H01L29/66462 ,  H01L29/78681 ,  H01L29/802 ,  H01L29/2003

Abstract: The present invention is directed to a technique for manufacturing semiconductor devices in which p type GaN is formed on a substrate and semi-insulating AlN is formed on the P type GaN with n type GaN formed on the p type GaN and partially below the AlN. Highly efficient high power and high voltage semiconductor devices are formed through this technique having better or similar properties to silicon type semiconductors.

Abstract translation: 本发明涉及一种用于制造半导体器件的技术，其中p型GaN形成在衬底上并且半导体AlN形成在p型GaN上，其中n型GaN形成在p型GaN上并部分地位于AlN之下。 通过该技术形成了高效率的高功率和高电压半导体器件，其具有与硅型半导体更好或相似的特性。