Air-tightly sealed container for photosemiconductor, and
photosemiconductor module
    11.
    发明授权
    Air-tightly sealed container for photosemiconductor, and photosemiconductor module 失效
    用于光半导体的气密密封容器和光半导体模块

    公开(公告)号:US5945721A

    公开(公告)日:1999-08-31

    申请号:US70815

    申请日:1998-05-01

    申请人: Nobuyoshi Tatoh

    发明人: Nobuyoshi Tatoh

    摘要: A highly reliable air-tightly sealed container having a light transmissive window member formed of a borosilicate glass plate 4 and brazed to a cylindrical portion of a container side wall, the borosilicate glass plate being formed to a substantially right hexagonal shape and provided with a metallized portion 5 on an outer circumferential portion thereof with a circular light transmissive portion 6 left in the central part thereof, a diameter L.sub.1 of a circle inscribing the outer circumference of the borosilicate glass plate 4 and a diameter L.sub.2 of the light transmissive portion being in the relation of L.sub.2 /L.sub.1 .ltoreq.0.85. The thickness L.sub.3 of the borosilicate glass plate is 0.11-0.25 times as large as the diameter L.sub.1 mentioned above. The air-tightly sealed container uses a low-price borosilicate glass as the window member and free from the breakage of the borosilicate glass plate and the leakage of gas. A reliable photosemiconductor module can be obtained using the container.

    摘要翻译: 一种高度可靠的气密密封容器,其具有由硼硅酸盐玻璃板4形成的透光窗构件并钎焊到容器侧壁的圆筒部分,该硼硅酸盐玻璃板形成为基本上正六边形形状并且设有金属化 在其外周部分的部分5具有留在其中心部分的圆形透光部分6,刻有硼硅酸盐玻璃板4的外周的圆的直径L1和透光部分的直径L2在 L2 / L1的关系为0.85。 硼硅酸盐玻璃板的厚度L3为上述直径L1的0.11〜0.25倍。 气密密封容器使用低价硼硅酸盐玻璃作为窗构件,并且不含硼硅酸盐玻璃板的破损和气体泄漏。 可以使用容器获得可靠的光半导体模块。

    Lateral photo-sensing device, opt-electronic integrated circuit using
the lateral photo-sensing device and photo-logic device using the
lateral photo-sensing device
    12.
    发明授权
    Lateral photo-sensing device, opt-electronic integrated circuit using the lateral photo-sensing device and photo-logic device using the lateral photo-sensing device 失效
    横向感光装置,使用横向感光装置的光电子集成电路和使用侧向感光装置的光电逻辑装置

    公开(公告)号:US5296698A

    公开(公告)日:1994-03-22

    申请号:US840899

    申请日:1992-02-26

    申请人: Nobuyoshi Tatoh

    发明人: Nobuyoshi Tatoh

    摘要: The present invention is directed to a lateral photo-sensing device comprising a first semiconductor layer of a first conductivity type formed on a semi-insulative semiconductor substrate, a second semiconductor layer of a second conductivity type formed on the first semiconductor layer for absorbing a light, a pair of electrodes formed on the second semiconductor layer, rectifying junction being formed between the electrodes and the second semiconductor layer, and a biasing electrode for applying a biasing voltage to the first semiconductor layer. Further the present invention is directed to an opt-electronic integrated circuit using the lateral photo-sensing device and a photo-logic device using the lateral photo-sensing device.

    摘要翻译: 本发明涉及一种横向感光装置,其包括形成在半绝缘半导体衬底上的第一导电类型的第一半导体层,形成在第一半导体层上用于吸收光的第二导电类型的第二半导体层 形成在所述第二半导体层上的一对电极,形成在所述电极和所述第二半导体层之间的整流结,以及用于向所述第一半导体层施加偏置电压的施加电极。 此外,本发明涉及一种使用横向光感测装置的光电子集成电路和使用该侧向感光装置的光电逻辑装置。

    Hermetically sealing enclosure for housing photo-semiconductor devices and photo-semiconductor module incorporating the enclosure
    13.
    发明授权
    Hermetically sealing enclosure for housing photo-semiconductor devices and photo-semiconductor module incorporating the enclosure 失效
    用于外壳光电半导体器件的密封外壳和包含外壳的光电半导体模块

    公开(公告)号:US06600223B2

    公开(公告)日:2003-07-29

    申请号:US10178520

    申请日:2002-06-25

    IPC分类号: H01L2306

    摘要: A hermetically sealing enclosure for housing photo-semiconductor devices that reduces the heat generated in the wiring strips at the ceramic terminal member, increases the allowable current of the wiring strips in comparison with the conventional enclosures while maintaining the low power consumption, and stabilizes the output of the device in the enclosure. A photo-semiconductor module incorporating the enclosure is also offered. The ceramic terminal member is provided with a first wiring layer that comprises a plurality of wiring strips and that penetrates through the ceramic terminal member; two second wiring layers each of which comprises at least one wiring strip, one of which is connected to the first wiring layer at the outside of the enclosure, and the other of which is connected to the first wiring layer at the inside; and at least one third wiring layer that comprises at least one wiring strip and that connects the two second wiring layers.

    摘要翻译: 用于容纳光电半导体器件的气密密封外壳,其减少陶瓷端子构件上的布线条中产生的热量,与常规外壳相比,增加了布线条的允许电流,同时保持了低功耗,并稳定了输出 的设备。 还提供了包含外壳的光电半导体模块。 陶瓷端子构件设置有包括多个布线条并穿过陶瓷端子构件的第一布线层; 两个第二布线层,每个第二布线层包括至少一个布线条,其中一个布线条在外壳的外侧连接到第一布线层,另一布线条在内侧连接到第一布线层; 以及包括至少一个布线条并且连接所述两个第二布线层的至少一个第三布线层。

    Microbench and producing method therefor, and optical semiconductor module using same
    15.
    发明授权
    Microbench and producing method therefor, and optical semiconductor module using same 失效
    微型台及其制造方法以及使用其的光半导体模块

    公开(公告)号:US06477302B2

    公开(公告)日:2002-11-05

    申请号:US09756764

    申请日:2001-01-10

    申请人: Nobuyoshi Tatoh

    发明人: Nobuyoshi Tatoh

    IPC分类号: G02B630

    摘要: An object of the present invention is to produce and provide a microbench for achieving a highspeed, low-cost semiconductor module having a high S/N ratio. A microbench for use in mounting an optical fiber, is characterized in that a substrate comprises a ceramics having a specific resistance 109 &OHgr;cm or larger and a dielectric constant of 15 or less, a groove for mounting an optical fiber is disposed on the surface thereof, a semiconductor device mounting portion onto which an optical semiconductor is mounted is provided at the end portion of this groove, and an alignment mark for semiconductor mounting is disposed in this semiconductor device mounting portion. The above-mentioned ceramics is either AlN, or a ceramics having AlN as its principal component.

    摘要翻译: 本发明的目的是制造和提供用于实现具有高S / N比的高速,低成本半导体模块的微型台。 用于安装光纤的微型台架的特征在于,基板包括电阻率为10ΩEG·cm以上且介电常数为15以下的陶瓷,用于安装光纤的槽设置在其表面上, 在该槽的端部设置有安装有光学半导体的半导体器件安装部,并且在该半导体器件安装部中设置用于半导体安装的对准标记。 上述陶瓷是AlN或以AlN为主要成分的陶瓷。

    Surface temperature sensor head
    16.
    发明授权
    Surface temperature sensor head 失效
    表面温度传感器头

    公开(公告)号:US06464393B2

    公开(公告)日:2002-10-15

    申请号:US09725502

    申请日:2000-11-30

    申请人: Nobuyoshi Tatoh

    发明人: Nobuyoshi Tatoh

    IPC分类号: G01K700

    CPC分类号: G01K7/04 G01K1/143

    摘要: A surface temperature sensor head including a first layer made of a material of a heat conductivity higher than 100 W/mK, a second layer having a crossing tips of a thermocouple and a brazing material and a third layer made of a material of a heat conductivity higher than 100 W/mK, the brazing material unifying the crossing tips, the first layer and the third layer. The sensor head enables a temperature prober to measure temperatures of an object non-destructively with high spatial resolution.

    摘要翻译: 一种表面温度传感器头,包括由导热率高于100W / mK的材料制成的第一层,具有热电偶和钎焊材料的交叉尖端的第二层和由导热材料制成的第三层 高于100W / mK,钎焊料均匀交叉尖端,第一层和第三层。 传感器头可使温度探测器以高空间分辨率非破坏性地测量物体的温度。

    Ceramic terminal block, hermetic sealed package, and complex
semiconductor device
    17.
    发明授权
    Ceramic terminal block, hermetic sealed package, and complex semiconductor device 失效
    陶瓷端子块,密封封装和复合半导体器件

    公开(公告)号:US5907185A

    公开(公告)日:1999-05-25

    申请号:US934889

    申请日:1997-09-22

    申请人: Nobuyoshi Tatoh

    发明人: Nobuyoshi Tatoh

    摘要: This invention provides a package for complex semiconductor devices and a ceramic terminal block useful for the package. For example, the package might contain a semiconductor laser diode and a Peltier device for cooling the laser diode. A ceramic terminal block has metallized electrode patterns formed thereon which extend inside and outside the package. Grooves are formed in some of the metallized electrode patterns for the leads of the Peltier device. Inward extending leads are fixed on the grooves of the electrode patterns for the Peltier leads. The leads of the Peltier device are soldered to the inward leads.

    摘要翻译: 本发明提供了一种用于复合半导体器件的封装和用于封装的陶瓷端子块。 例如,封装可能包含用于冷却激光二极管的半导体激光二极管和珀尔帖(Peltier)器件。 陶瓷端子块具有形成在其上的金属化电极图案,其在封装内部和外部延伸。 在珀尔帖装置的引线的一些金属化电极图案中形成槽。 向内延伸的引线固定在珀耳帖引线的电极图案的凹槽上。 珀耳帖装置的引线焊接到内芯。