摘要:
A focused ion beam apparatus enables an ion beam to be focused highly accurately on a sample at the beam spot position of the case of the absence of magnetic field without causing isotope separation of the ion beam on the sample, even when there is a magnetic field on the ion beam optical axis or the magnetic field fluctuates. The focused ion beam apparatus comprises a corrective magnetic field generating unit 10 disposed on the optical axis of the ion beam 3 for correcting the deflection of the ion beam 3 due to an external magnetic field. The corrective magnetic field generating unit 10 includes pole-piece pairs 26A and 26B, each of which having two pole pieces 26a and 26b or 26c and 26d that are adjacent to each other with a gap d. The pole-piece pairs 26A and 26B are disposed opposite to each other with a gap g (>d) across the optical axis of the ion beam 3. Each of the pole pieces 26a to 26d is wound with an internal coil 29, and the pole-piece pairs 26A and 26B are each wound with an external coil 30 in such a manner as to surround the internal coils 29.
摘要:
An ICP (Inductively Coupled Plasma) system is used as a plasma generating means. A CVD process gas is introduced within a vacuum vessel from a gas inlet nozzle, and is then converted into plasma by a high frequency electric field induced within the vacuum vessel by an electromagnetic wave from an antenna. A sample can be located at a position not to be exposed to plasma, and a decomposed product material produced from the CVD process gas by the plasma is deposited on the surface of the sample mounted on a sample stage, thus forming a film. A dielectric viewing port, the antenna and the sample are disposed along the same axial direction such that the directions of the planes thereof correspond to each other, so that the film formation on the surface of the sample within the vacuum vessel can be observed through the transparent dielectric viewing port. When a CVD process gas of a CVD source gas mixed with a rare gas is introduced in the vacuum vessel and a bias voltage is applied to the sample, the film is formed by the CVD source gas and it is simultaneously planarized by sputter etching by the rare gas. When an antenna serving as a target material is disposed within the vacuum vessel, it is possible to eliminate the cutoff of the high frequency power which, has been generated for the inductive coupling from the outside of the vacuum vessel.
摘要:
A needle-shaped terminal, i.e., a probe tip, is brought into extremely close proximity with an object being measured. This probe tip is formed from an optically active material and in itself is electrically non-conductive, so that it has no electrical influence whatsoever on the object being measured. When optical pulses are beamed onto this probe tip, the probe tip becomes an electric conductor and a current flows between it and the object being measured, so that the electric potential of the object can be measured. This facilitates previously impossible measurements of high-speed electric waveforms. It also facilitates high spatial resolution monitoring and control of probe tip position and characterization of measurement sites, and enables highly reliable measurements to be made inexpensively.
摘要:
An automatic transmission line pressure control system controls line pressure in an automatic transmission equipped with a torque convertor for hydraulically coupling and uncoupling friction coupling elements of the automatic transmission. The automatic transmission line pressure control system regulates line pressure for selectively coupling and uncoupling the friction coupling elements so as to shift the automatic transmission into desired speed gears. The line pressure is forcibly dropped to a level lower than a level present before an occurrence of a manual shift-down operation when a shift-down sensor detects the occurrence of a manual shift-down. The line pressure is then raised as a speed sensor detects an increase in rotational speed transmitted the automatic transmission, thereby shifting the automatic transmission into desired speed gears.
摘要:
In a scanning electron microscope, an optimum scanning method for reducing the amount of deflection of a primary electron beam and secondary electrons is determined to acquire stable images. An energy filter is used to discriminate between energy levels. The change in yield of obtained electrons is used to measure the variation in specimen potential. The time constant of charging created during electron beam irradiation is extracted. The scanning method is optimized based on the extracted time constant to reduce the distortion and magnification variation that appear in a SEM image.
摘要:
It is possible to carry out a highly accurate thin film machining by irradiation of an ion beam to a sample and a high-resolution STEM observation of the sample by irradiating an electron beam with a high throughput almost without moving the sample. The FIB irradiation system has an irradiation axis almost orthogonally intersecting an irradiation axis of the STEM observation electron beam irradiation system. The sample is arranged at the intersection point of the irradiation axes. The FIB machining plane of the sample is extracted from the thin film plane of the STEM observation sample. The transmitting/scattered beam detector are arranged at backward of the sample on the electron beam irradiation axis viewed from the electron beam irradiation direction.
摘要:
Disclosed herein are a method for applying, while a charged particle beam is in a state being irradiated toward the sample, a voltage to the sample so that the charged particle beam does not reach the sample (hereafter such state may be referred to as a mirror state) and detecting information on a potential of a sample using a signal obtained then, and a device for automatically adjusting conditions of the device based on the result of measuring.
摘要:
A focused ion beam apparatus and a focused ion beam irradiation method are disclosed. Even in the case where a magnetic field exists on the optical axis of an ion beam and the particular magnetic field undergoes a change, the ion beam is focused without separating the isotopes on the sample at the same ion beam spot position as if the magnetic field is not existent. A canceling magnetic field is generated on the optical axis of the ion beam from a canceling magnetic field generator thereby to offset the deflection of the ion beam due to the external magnetic field.
摘要:
The present invention provides a compact electron lens causing little aberration, and a charged particle beam apparatus such as a scanning electron microscope that is super compact and offers a high resolution. An upper magnetic pole and a sample-side magnetic pole are magnetically coupled to the respective poles of a permanent magnet that is made of a highly strong magnetic material such as a rare-earth cobalt system or a neodymium-iron-boron system, that is axially symmetrical, and that has a hole in the center thereof. An inner gap is created on the side of a center axis. Thus, a magnetic lens is formed axially. Moreover, a semi-stationary magnetic path that shields an outside magnetic field and has the magnetic reluctance thereof regulated is disposed outside. The sample-side magnetic pole and magnetic path defines a region where magnetic reluctance is the highest outside the permanent magnet. A space defined by the permanent magnet, upper magnetic pole, sample-die magnetic pole, and semi-stationary magnetic path is filled with a filling made of a non-magnetic material. Thus, an objective lens is constructed.
摘要:
It is possible to carry out a highly accurate thin film machining by irradiation of an ion beam to a sample and a high-resolution STEM observation of the sample by irradiating an electron beam with a high throughput almost without moving the sample. The FIB irradiation system has an irradiation axis almost orthogonally intersecting an irradiation axis of the STEM observation electron beam irradiation system. The sample is arranged at the intersection point of the irradiation axes. The FIB machining plane of the sample is extracted from the thin film plane of the STEM observation sample. The transmitting/scattered beam detector are arranged at backward of the sample on the electron beam irradiation axis viewed from the electron beam irradiation direction.