公开(公告)号：US10590339B2

公开(公告)日：2020-03-17

申请号：US15981707

申请日：2018-05-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alan Piquette ,  Maxim N. Tchoul ,  Gertrud Kräuter

IPC: C09K11/02 ,  H01L33/50 ,  H01L33/56 ,  C08G77/18 ,  C08G77/06 ,  C08K3/36 ,  B32B27/28 ,  B32B38/00 ,  B32B27/08 ,  C08G77/00

Abstract: A method for producing a converter element, a converter element and a light emitting device are disclosed. In an embodiment a method for producing a converter element providing at least one phosphor and a liquid polysiloxane resin and preparing a cured polysiloxane powder from a first fraction of the liquid polysiloxane resin. The method further includes preparing a mixture including the at least one phosphor, the cured polysiloxane powder and a second fraction of the liquid polysiloxane resin, casting and curing the mixture to a cured layer and singulating the cured layer.

公开(公告)号：US10570333B2

公开(公告)日：2020-02-25

申请号：US15602175

申请日：2017-05-23

Applicant: OSRAM OPTO Semiconductors GmbH

Inventor： Alan Piquette ,  Adam Scotch ,  Gertrud Kraeuter ,  Matthias Loster

IPC: C09K11/77 ,  C09K11/02 ,  H01L33/50 ,  F21K9/64 ,  C08K3/22 ,  C08K3/36 ,  F21V7/22 ,  F21Y115/30 ,  F21Y115/10

Abstract: A wavelength conversion element comprising a crosslinked matrix and at least one phosphor dispersed in said matrix, wherein said matrix is made from a precursor material comprising a precursor having a structure chosen from one of the generic formulae is provided. Further, a light emitting device comprising a wavelength conversion element and a method for producing a wavelength conversion element are provided.

公开(公告)号：US20200056091A1

公开(公告)日：2020-02-20

申请号：US16104743

申请日：2018-08-17

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alan Piquette ,  Maxim N. Tchoul ,  Darshan Kundaliya ,  Adam Scotch ,  Gertrud Kräuter

IPC: C09K11/02 ,  H01L33/50 ,  H01L33/56 ,  C09K11/77 ,  C08G77/04 ,  C09D5/22 ,  C09D183/04

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment an optoelectronic component includes a semiconductor chip including a plurality of pixels, each pixel configured to emit electromagnetic primary radiation from a radiation exit surface and conversion layers located on at least a part of the radiation exit surfaces, wherein the conversion layers comprise a crosslinked matrix having a three-dimensional siloxane-based network and at least one phosphor embedded in the matrix, and wherein the conversion layers have a thickness of ≤30 μm.

公开(公告)号：US20190123248A1

公开(公告)日：2019-04-25

申请号：US16094870

申请日：2017-04-13

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Gertrud Kräuter ,  Matthias Loster ,  Kathy Schmidtke ,  Alan Piquette

IPC: H01L33/56 ,  C08J3/24 ,  C08G77/18 ,  C08K3/22 ,  C08K3/28 ,  C09D183/06 ,  C09K11/02 ,  C09K11/08

CPC classification number: H01L33/56 ,  C08G77/18 ,  C08J3/24 ,  C08K3/22 ,  C08K3/28 ,  C08K2003/2227 ,  C09D183/06 ,  C09K11/02 ,  C09K11/08 ,  H01L33/501 ,  H01L33/507 ,  H01L2933/0041 ,  H01L2933/005

Abstract: An optoelectronic component and a method for producing an optoelectronic component are disclosed. In an embodiment a method for producing an optoelectronic component includes providing a semiconductor capable of emitting primary radiation, providing an alkoxy-functionalized polyorganosiloxane resin and crosslinking the alkoxy-functionalized polyorganosiloxane resin to form a three-dimensionally crosslinked polyorganosiloxane, wherein an organic portion of the three-dimensionally crosslinked polyorganosiloxane is up to 25 wt %.

公开(公告)号：US11515454B2

公开(公告)日：2022-11-29

申请号：US16909685

申请日：2020-06-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alan Piquette ,  Adam Scotch ,  Maxim N. Tchoul ,  Gertrud Kraeuter

IPC: H01L33/56 ,  H01L33/50

Abstract: The invention relates to a method for producing a conversion element for an optoelectronic component comprising the steps of: A) Producing a first layer, for that purpose: A1) Providing a polysiloxane precursor material, which is liquid, A2) Mixing a phosphor to the polysiloxane precursor material, wherein the phosphor is suitable for conversion of radiation, A3) Curing the arrangement produced under step A2) to produce a first layer having a phosphor mixed in a cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, where the ratio of T-units to all units is greater than 80%, B) Producing a phosphor-free second layer, for that purpose: B1) Providing the polysiloxane precursor material, which is liquid, B2) Mixing a filler to the polysiloxane precursor material, wherein the filler is in a cured and powdered form, wherein the filler has a refractive index, which is equal to the refractive index of the cured polysiloxane material, B3) Curing the arrangement produced under step B2) to produce a second layer having a filler mixed in the cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, wherein the produced conversion element is formed as a plate having a thickness of at least 100 μm.

公开(公告)号：US10727379B2

公开(公告)日：2020-07-28

申请号：US15932366

申请日：2018-02-16

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Alan Piquette ,  Adam Scotch ,  Maxim N. Tchoul ,  Gertrud Kraeuter

IPC: H01L33/56 ,  H01L33/50

Abstract: The invention relates to a method for producing a conversion element for an optoelectronic component comprising the steps of: A) Producing a first layer, for that purpose: A1) Providing a polysiloxane precursor material, which is liquid, A2) Mixing a phosphor to the polysiloxane precursor material, wherein the phosphor is suitable for conversion of radiation, A3) Curing the arrangement produced under step A2) to produce a first layer having a phosphor mixed in a cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, where the ratio of T-units to all units is greater than 80%, B) Producing a phosphor-free second layer, for that purpose: B1) Providing the polysiloxane precursor material, which is liquid, B2) Mixing a filler to the polysiloxane precursor material, wherein the filler is in a cured and powdered form, wherein the filler has a refractive index, which is equal to the refractive index of the cured polysiloxane material, B3) Curing the arrangement produced under step B2) to produce a second layer having a filler mixed in the cured polysiloxane material, which comprises a three-dimensional crosslinking network based primarily on T-units, wherein the produced conversion element is formed as a plate having a thickness of at least 100 μm.

公开(公告)号：US10662310B2

公开(公告)日：2020-05-26

申请号：US15960739

申请日：2018-04-24

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Maxim N. Tchoul ,  Thomas Dreeben ,  Adam Scotch ,  Alan Piquette ,  Gertrud Kräuter ,  Darshan Kundaliya

IPC: C08K3/22 ,  H01L33/50 ,  H01L33/56 ,  C09K11/02 ,  C09K11/77

Abstract: An optoelectronic component includes a semiconductor chip that is able to emit radiation having a wavelength of 400 nm to 490 nm, a conversion element including a reactive polysiloxane matrix material, a wavelength converting phosphor and filler nanoparticles, wherein the filler nanoparticles have a diameter of smaller than 15 nm and modify the refractive index and yield a mixture when added to the reactive polysiloxane matrix material.

公开(公告)号：US20190322837A1

公开(公告)日：2019-10-24

申请号：US15960739

申请日：2018-04-24

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Maxim N. Tchoul ,  Thomas Dreeben ,  Adam Scotch ,  Alan Piquette ,  Gertrud Kräuter ,  Darshan Kundaliya

IPC: C08K3/22 ,  H01L33/50 ,  H01L33/56 ,  C09K11/02 ,  C09K11/77

Abstract: An optoelectronic component includes a semiconductor chip that is able to emit radiation having a wavelength of 400 nm to 490 nm, a conversion element including a reactive polysiloxane matrix material, a wavelength converting phosphor and filler nanoparticles, wherein the filler nanoparticles have a diameter of smaller than 15 nm and modify the refractive index and yield a mixture when added to the reactive polysiloxane matrix material.

公开(公告)号：US20180340119A1

公开(公告)日：2018-11-29

申请号：US15602175

申请日：2017-05-23

Applicant: OSRAM OPTO Semiconductors GmbH

Inventor： Alan Piquette ,  Adam Scotch ,  Gertrud Kraeuter ,  Matthias Loster

IPC: C09K11/77 ,  C09K11/02 ,  C08K3/22 ,  C08K3/36 ,  H01L33/50 ,  F21V7/22 ,  F21K9/64

CPC classification number: C09K11/7774 ,  C08K3/22 ,  C08K3/36 ,  C08K2003/2227 ,  C09K11/02 ,  C09K11/025 ,  F21K9/64 ,  F21V7/22 ,  F21Y2115/10 ,  F21Y2115/30 ,  H01L33/501 ,  H01L33/502

Abstract: A wavelength conversion element comprising a crosslinked matrix and at least one phosphor dispersed in said matrix, wherein said matrix is made from a precursor material comprising a precursor having a structure chosen from one of the generic formulae is provided. Further, a light emitting device comprising a wavelength conversion element and a method for producing a wavelength conversion element are provided.

公开(公告)号：US20160268488A1

公开(公告)日：2016-09-15

申请号：US15033165

申请日：2014-10-28

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Britta Goeoetz ,  Alan Piquette ,  Christopher A. Tarry

IPC: H01L33/50 ,  H01L33/08 ,  H01L33/02 ,  H01L33/60 ,  H01L33/32

CPC classification number: H01L33/505 ,  C09K11/7774 ,  F21K9/64 ,  H01L25/0753 ,  H01L27/156 ,  H01L33/02 ,  H01L33/08 ,  H01L33/32 ,  H01L33/502 ,  H01L33/504 ,  H01L33/508 ,  H01L33/58 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2924/00

Abstract: In various embodiments, a wavelength conversion element is provided. The wavelength conversion element includes a ceramic grid material, which forms a grid having a plurality of openings, which are surrounded by the grid material in a main extension plane of the grid and reach through the grid in a direction perpendicular to the main extension plane of the grid, wherein the openings are filled with conversion segments.

Abstract translation: 在各种实施例中，提供波长转换元件。 波长转换元件包括陶瓷栅格材料，其形成具有多个开口的栅格，栅格材料被栅格的主延伸平面中的栅格材料围绕，并且在与栅极的主延伸平面垂直的方向上穿过栅格 栅格，其中开口填充有转化段。