公开(公告)号：US20160056343A1

公开(公告)日：2016-02-25

申请号：US14931246

申请日：2015-11-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Karl Weidner ,  Ralph Wirth ,  Axel Kaltenbacher ,  Walter Wegleiter ,  Bernd Barchmann ,  Oliver Wutz ,  Jan Marfeld

IPC: H01L33/48 ,  H01L31/0232 ,  H01L33/56 ,  H01L31/0203 ,  H01L33/62 ,  H01L33/60

CPC classification number: H01L33/0079 ,  H01L23/3107 ,  H01L23/3185 ,  H01L25/042 ,  H01L25/0753 ,  H01L31/02005 ,  H01L31/0203 ,  H01L31/0232 ,  H01L31/02322 ,  H01L31/02327 ,  H01L31/1892 ,  H01L33/483 ,  H01L33/486 ,  H01L33/502 ,  H01L33/54 ,  H01L33/56 ,  H01L33/60 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2924/00

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having side areas, a surface at a top side of the semiconductor chip, and a surface at a bottom side of the semiconductor chip; a shaped body having a surface at a top side of the shaped body and a surface at an underside of the shaped body; at least one plated-through hole including an electrically conductive material; and an electrically conductive connection electrically conductively connected to the semiconductor chip and the plated-through hole, wherein the side areas of the optoelectronic semiconductor chip are covered by the shaped body, and the surface at the top side and/or the surface at the bottom side of the optoelectronic semiconductor chip are completely free of the shaped body.

Abstract translation: 光电子半导体部件包括具有侧面区域的半导体芯片，半导体芯片顶面的表面和半导体芯片底面的表面， 成形体，其具有在成形体的顶侧的表面和成形体的下侧的表面; 至少一个包括导电材料的电镀通孔; 以及与半导体芯片和镀通孔导电连接的导电连接，其中光电子半导体芯片的侧面被成形体覆盖，并且在顶部和/或底部的表面处的表面 光电半导体芯片的一侧完全没有成形体。

公开(公告)号：US20230352617A1

公开(公告)日：2023-11-02

申请号：US18212935

申请日：2023-06-22

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Karl Weidner ,  Ralph Wirth ,  Axel Kaltenbacher ,  Walter Wegleiter ,  Bernd Barchmann ,  Oliver Wutz ,  Jan Marfeld

IPC: H01L33/00 ,  H01L33/48 ,  H01L33/62 ,  H01L25/075 ,  H01L23/31 ,  H01L31/0232 ,  H01L33/60 ,  H01L31/0203 ,  H01L33/56 ,  H01L25/04 ,  H01L31/02 ,  H01L33/50 ,  H01L31/18

CPC classification number: H01L33/0093 ,  H01L33/486 ,  H01L33/62 ,  H01L25/0753 ,  H01L23/3185 ,  H01L31/0232 ,  H01L33/60 ,  H01L31/0203 ,  H01L31/02327 ,  H01L33/483 ,  H01L33/56 ,  H01L23/3107 ,  H01L25/042 ,  H01L31/02005 ,  H01L33/502 ,  H01L31/02322 ,  H01L31/1892 ,  H01L33/54

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip having a top area at a top side, a bottom area at an underside, at least one side area connecting the top area and the bottom area; electrical contact locations at the top area or at the bottom area of the optoelectronic semiconductor chip; and a molded body, wherein the molded body surrounds the optoelectronic semiconductor chip at all side areas at least in places, the molded body is electrically insulating, and the molded body is free of any conductive element that completely penetrates the molded body.

公开(公告)号：US10134943B2

公开(公告)日：2018-11-20

申请号：US15532071

申请日：2015-11-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Bernd Barchmann ,  Fabian Eigenmann ,  Andreas Ploessl

IPC: H01L21/683 ,  H01L21/78 ,  H01L33/00 ,  H01L31/0224 ,  H01L23/00

Abstract: A method for producing a multiplicity of semiconductor chips (13) is provided, comprising the following steps: —providing a wafer (1) comprising a multiplicity of semiconductor bodies (2), wherein separating lines (9) are arranged between the semiconductor bodies (2), —depositing a contact layer (10) on the wafer (1), wherein the material of the contact layer (10) is chosen from the following group: platinum, rhodium, palladium, gold, and the contact layer (10) has a thickness of between 8 nanometers and 250 nanometers, inclusive, —applying the wafer (1) to a film (11), —at least partially severing the wafer (1) in the vertical direction along the separating lines (9) or introducing fracture nuclei (12) into the wafer (1) along the separating lines (9), and —breaking the wafer (1) along the separating lines (9) or expanding the film (11) such that a spatial separation of the semiconductor chips (13) takes place, wherein the contact layer (10) is also separated. A semiconductor chip, a component and a method for producing the latter are also provided.

公开(公告)号：US20180145234A1

公开(公告)日：2018-05-24

申请号：US15577045

申请日：2016-05-19

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Thomas Schwarz ,  Andreas Biebersdorf ,  Dirk Becker ,  Bernd Barchmann ,  Björn Hoxhold ,  Philipp Schlosser ,  Andreas Waldschik

IPC: H01L33/60 ,  H01L33/62 ,  H01L33/00 ,  H01L25/075

CPC classification number: H01L33/60 ,  H01L25/0753 ,  H01L33/005 ,  H01L33/486 ,  H01L33/62 ,  H01L33/647 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2933/0033 ,  H01L2933/0075 ,  H01L2924/00012 ,  H01L2224/4554

Abstract: A method of producing optoelectronic semiconductor components includes providing a carrier with a carrier underside and a carrier top, wherein the carrier has a metallic core material and at least on the carrier top a metal layer and following this a dielectric mirror are applied to the core material, forming at least two holes through the carrier, producing a ceramic layer with a thickness of at most 150 μm at least on the carrier underside and in the holes, wherein the ceramic layer includes the core material as a component, applying metallic contact layers to at least subregions of the ceramic layer on the carrier underside and in the holes so that the carrier top electrically connects to the carrier underside through the holes, and applying at least one radiation-emitting semiconductor chip to the carrier top and electrical bonding of the semiconductor chip to the contact layers.