公开(公告)号：US20210352249A1

公开(公告)日：2021-11-11

申请号：US17286163

申请日：2019-10-14

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Klaus FLOCK ,  Hubert HALBRITTER

IPC: H04N9/31 ,  G02B27/01 ,  G02B26/08

Abstract: An optical display device includes a plurality of emitters configured to emit electromagnetic radiation in a main emission direction and at least one optical modulation unit which has an adjustable focal length. The emitters are arranged in a main plane and are separately controllable from one another. The optical modulation unit is arranged downstream of the emitters in the main emission direction. Images of the emitters are generated by means of the optical modulation unit, the images of the emitters each having a distance from the main plane which can be predetermined by means of the adjustable focal length. Methods of operating an optical display device are also disclosed.

公开(公告)号：US20210335219A1

公开(公告)日：2021-10-28

申请号：US17311095

申请日：2019-12-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Hubert HALBRITTER ,  Jens RICHTER

IPC: G09G3/32 ,  H01L25/075

Abstract: An optoelectronic light emitting device includes an optoelectronic semiconductor component configured to generate light, a current source configured to generate a current, and a PWM transistor driven by a pulse-width modulated signal. The PWM transistor enters a first state or a second state based on said pulse-width modulated signal. The PWN transistor is configured to supply the optoelectronic semiconductor component with the current generated by the current source in the first state and to decouple it from the current generated by the current source in the second state. The current source is manufactured by a first technology and the PWM transistor is manufactured by a second technology.

公开(公告)号：US20200295240A1

公开(公告)日：2020-09-17

申请号：US16651218

申请日：2018-12-11

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Alexander LINKOV ,  Hubert HALBRITTER

IPC: H01L33/50 ,  H01L33/60 ,  H01L33/42

Abstract: A light-emitting semiconductor device is specified which comprises a light-emitting semiconductor chip having a main surface comprising a radiation-outcoupling surface via which, during operation, a first light in a first wavelength range is emitted. A wavelength conversion layer for converting at least part of the first light into second light in a second wavelength range different from the first wavelength range is applied onto a first sub-region of the main surface. An optical feedback element is applied directly to a second sub-region of the main surface adjacent to the first sub-region, wherein the optical feedback element deflects first light emitted from the second sub-region in the direction of the radiation-outcoupling surface and/or in the direction of the wavelength conversion layer.

公开(公告)号：US20180331258A1

公开(公告)日：2018-11-15

申请号：US15775789

申请日：2016-11-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Hubert HALBRITTER ,  Ines PIETZONKA

IPC: H01L33/18 ,  H01L33/10 ,  H01L33/36 ,  H01L21/02

CPC classification number: H01L33/18 ,  B82Y10/00 ,  H01L21/02601 ,  H01L21/02603 ,  H01L29/0669 ,  H01L33/10 ,  H01L33/36 ,  H01L51/0048 ,  H01L51/0049

Abstract: The invention relates to an optoelectronic component (10), comprising a carrier (1) and a plurality of nanorods (2), which are arranged on the carrier (1), wherein the nanorods (2) each comprise an active zone (2d). Furthermore, the optoelectronic component (10) comprises a potting compound (3), which is arranged on the carrier (1) and at least partially embeds the nanorods (2), and a structured metallization (5), which laterally surrounds the nanorods (2), wherein the nanorods (2) extend in a longitudinal direction N, the structured metallization (5) extends in a longitudinal direction M, and the longitudinal direction M of the structured metallization (5) extends transversely to the longitudinal direction N of the nanorods (2).

公开(公告)号：US20170125646A1

公开(公告)日：2017-05-04

申请号：US15316144

申请日：2015-06-02

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Hubert HALBRITTER ,  Britta GOEOETZ

IPC: H01L33/50 ,  H01L33/44 ,  H01L33/58

CPC classification number: H01L33/502 ,  H01L33/44 ,  H01L33/507 ,  H01L33/58

Abstract: The invention relates to an optoelectronic component (10) comprising—a radiation-emitting semiconductor chip (2), —a conversion element (8) which is suitable for converting at least one part of the radiation (12) emitted by the semiconductor chip (2) into a converted radiation (13), said converted radiation (13) having a longer wavelength than the emitted radiation (12), and—a cover (9) which is permeable at least to the converted radiation (13) and which follows the conversion element (8) in a main emission direction, wherein—the conversion element (8) comprises a quantum dot converter material (7), —the conversion element (8) is arranged on a cover (9) inner face (15) facing the semiconductor chip, and—the cover has silicon (9) or consists of silicon.

公开(公告)号：US20250118248A1

公开(公告)日：2025-04-10

申请号：US18954344

申请日：2024-11-20

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Hoa VU ,  Hubert HALBRITTER ,  Jens RICHTER ,  Jean-Jacques DROLET ,  Kilian REGAU ,  Patrick HÖRNER ,  Thorsten BAUMHEINRICH ,  Christopher SOELL ,  Paul TA ,  Jong PARK ,  Kanishk CHAND

IPC: G09G3/32

Abstract: According to an aspect described herein, a device is proposed for electronically driving an LED comprising a data signal line, a threshold signal line, and a select signal line. Further provided is an LED electrically connected in series with a dual-gate transistor and together therewith between first and second potential terminals. A first control gate of the dual gate transistor is connected to the threshold line. The device also includes a select latch circuit comprising a charge latch connected to a second control gate of the dual gate transistor and to a current line contact of the dual gate transistor, and a control transistor comprising a control terminal connected to the select signal line.

公开(公告)号：US20230016296A1

公开(公告)日：2023-01-19

申请号：US17783687

申请日：2020-12-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Hubert HALBRITTER

IPC: H01S5/42 ,  H01S5/04 ,  H01S5/042 ,  H01S5/183 ,  H01S5/062 ,  G01S7/481

Abstract: The invention relates to a laser light source (10), comprising an arrangement (120) of surface-emitting semiconductor lasers (1251, 1252, . . . 125n) to which a voltage is applied such that an operating current is below the threshold current and an intrinsic emission of the surface-emitting semiconductor laser is prevented. The laser light source also comprises a first semiconductor laser (100) which emits radiation (110) that enters the surface-emitting semiconductor laser such that induced emission takes place via the injection locking mechanism and the individual surface-emitting semiconductor lasers emit laser light having the same wavelength and polarisation direction as the irradiated radiation (110). The emission frequency of the first semiconductor laser can be changed by changing the operating current.

公开(公告)号：US20220140210A1

公开(公告)日：2022-05-05

申请号：US17430254

申请日：2020-02-11

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Hubert HALBRITTER ,  Erwin LANG ,  Julia STOLZ ,  Andreas RAUSCH ,  Simon SCHWALENBERG

IPC: H01L33/60 ,  H01L33/50

Abstract: The invention relates to various aspects of an optoelectronic component or an arrangement comprising such a component for various applications, in particular in the automotive sector and for visual displays. The arrangements are characterized by simple manufacture and fast switching times.

公开(公告)号：US20220102583A1

公开(公告)日：2022-03-31

申请号：US17426456

申请日：2020-01-29

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Thorsten BAUMHEINRICH ,  Martin BEHRINGER ,  Andreas BIEBERSDORF ,  Ruth BOSS ,  Michael BRANDL ,  Peter BRICK ,  Jean-Jacques DROLET ,  Hubert HALBRITTER ,  Laura KREINER ,  Erwin LANG ,  Andreas LEBER ,  Tobias MEYER ,  Alexander PFEUFFER ,  Marc PHILIPPENS ,  Jens RICHTER ,  Thomas SCHWARZ ,  Paul TA ,  Tansen VARGHESE ,  Xue WANG ,  Sebastian WITTMANN ,  Julia STOLZ ,  Karsten DIEKMANN ,  Karl ENGL ,  Siegfried HERRMANN ,  Berthold HAHN ,  Stefan ILLEK ,  Bruno JENTZSCH ,  Korbinian PERZLMAIER ,  Ines PIETZONKA ,  Andreas RAUSCH ,  Kilian REGAU ,  Tilman RUEGHEIMER ,  Simon SCHWALENBERG ,  Christopher SOELL ,  Peter STAUSS ,  Petrus SUNDGREN ,  Hoa VU ,  Christopher WIESMANN ,  Georg BOGNER ,  Patrick HOERNER ,  Christoph KLEMP ,  Jens MUELLER ,  Kerstin NEVELING ,  Jong PARK ,  Christine RAFAEL ,  Frank SINGER ,  Kanishk CHAND ,  Felix FEIX ,  Christian MUELLER ,  Eva-Maria RUMMEL ,  Nicole HEITZER ,  Marie ASSMANN ,  Christian BERGER ,  Ana KANEVCE

IPC: H01L33/38 ,  H01L27/15 ,  H01L25/075 ,  H01L21/683 ,  H01L33/06 ,  H01L33/18 ,  H01L33/30 ,  H01L33/40 ,  H01L33/42 ,  H01L33/50 ,  G09G3/32

Abstract: The invention relates to various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.

公开(公告)号：US20220102324A1

公开(公告)日：2022-03-31

申请号：US17510907

申请日：2021-10-26

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Peter BRICK ,  Jean-Jacques DROLET ,  Hubert HALBRITTER ,  Laura KREINER ,  Thomas SCHWARZ ,  Julia STOLZ

IPC: H01L25/075 ,  H01L33/60 ,  H01L33/50 ,  H01L33/24

Abstract: Disclosed are various aspects of a μ-LED or a μ-LED array for augmented reality or lighting applications, in particular in the automotive field. The μ-LED is characterized by particularly small dimensions in the range of a few μm.